1. Field of the Invention
The present invention relates generally to function synthesizers, and particularly to a CMOS (complementary metal oxide semiconductor) programmable non-linear function synthesizer that can realize arbitrary nonlinear functions using programmable transistor squaring units without dedicated current multipliers.
2. Description of the Related Art
U.S. Pat. No. 7,952,395, issued to the present first-named inventor, Muhammad Taher Abuelma'atti et al, on May 31, 2011, discloses a universal CMOS current-mode analog function synthesizer. The proposed circuit of U.S. Pat. No. 7,952,395 is based upon the fact that numerous nonlinear functions can be approximated, to a high degree of accuracy, using a few terms of their Taylor series expansion.
Moreover, U.S. Pat. No. 7,952,395 teaches how to provide current multipliers having reasonable bandwidth and low complexity (thus, low power consumption), while eliminating the need to trim out the feed-through terms (offset currents) and while eliminating the necessity to adjust the scale factor (the multiplier gain). Yet there remains the problem of how to program such a device for arbitrary functions, not just the thirty-two functions shown in the patent.
Thus, a CMOS programmable non-linear function synthesizer solving the aforementioned problems is desired.
The CMOS programmable non-linear function synthesizer utilizes CMOS current-mode electronics to provide synthesis of arbitrary analog functions. The circuit approximates a seventh-order Taylor series expansion to synthesize an arbitrary nonlinear function. Each term of the Taylor series expansion is realized using a current-mode basic building block, and the output weighted currents of these basic building blocks are algebraically added, in addition to a DC current, if needed. The CMOS current-mode electronic circuit can be easily integrated, extended to include higher order terms of the Taylor series, and programmed to generate arbitrary nonlinear functions.
These and other features of the present invention will become readily apparent upon further review of the following specification and drawings.
Similar reference characters denote corresponding features consistently throughout the attached drawings.
As shown in
f(x)≅y=a0+a1x+a2x2+a3x3+a4x4+a5x5+a6x6+a7x7+ . . . anxn where |x|<1 (1)
Details and theory of operation of a prior art Taylor series expansion nonlinear function generation approach are included in U.S. Pat. No. 7,952,395, issued to Muhammad Taber Abuelma'atti et al, on May 31, 2011, which is hereby incorporated by reference in its entirety. In current mode, when the variable x represents the normalized input current, equation (1) can be implemented by adding a DC current component to the weighted output currents of a number of power-factor raising circuits with power factors=1, 2, . . . , 7, and using current amplifiers (or attenuators). This method can successfully generate several mathematical functions where the power-factor raising circuits and the current amplifiers (or attenuators) are obtained by successive use of a current squaring circuit obtained from a modified version of a traditional class-AB current mirror. However, while the original version of this class AB current mirror can provide two output currents, one proportional to the input current and the other proportional to the square of the input current, control of the weighting factors of these two currents is feasible only through the simultaneous control of three strictly related currents. This is practically not feasible. Thus, the circuit of the '395 patent is suitable only for generating pre-specified mathematical functions with fixed values of the weighting factors and cannot be easily programmed to generate arbitrary nonlinear functions.
Thus, in order to realize a programmable nonlinear function synthesizer, it is essential to have a squaring circuit with easy control over the weighting factor of its output current. The squaring unit circuit 10 shown in
With respect to the operation of the SU 10, if it is assumed that transistors M1 and M2 are identical and working in the saturation region, and transistors M5 and M6 are also identical to each other but operating in the linear region, then the current Io1 can be expressed as:
I
o1
=k
1
R
2
I
in
2
+k
1(VSS+Vth)2 (2)
In equation (2), k1 is the transconductance parameter of transistors M1 and M2, and R is the equivalent resistance of the transistors M5 and M6, which is given by:
when the transistors M5 and M6 are working in the linear region, and where k3 is the transconductance parameter of transistors M5 and M6. In equations (2) and (3), Vth is the threshold voltage of the concerned transistors. Moreover, assuming that transistors M3 and M4 are identical and working in the saturation region, then the current Io2 can be expressed as:
I
o2
=k
1(VSS+Vth)2 (4).
In equation (4), Vth is the threshold voltage and k1 is the transconductance parameter of transistors M3 and M4. This implies that transistors M1-M4 are identical. M1, M2, M5, M6 are configured as a first squaring circuit. M3, M4, M7, and M8 are configured as a second squaring circuit in the SU circuit 10. Transistors M9-M12 are configured as a current-mirror.
Combining equations (2)-(4), the output current of the squaring circuit of
Inspection of equation (5) clearly shows that the weighting factor of the output current of the squaring circuit 10 of
(A+B)2−(A−B)=4AB (6)
then by successive use of the squaring unit 10, in addition to inverting current mirrors 23 and/or inverting and non-inverting current mirrors 22 (as shown in
As shown in circuit 400 of
I
out
=g
m
Rx. (7)
Combining equations (3) and (7), the output current of
In equations (7) and (8), the parameter gm is the transconductance of the OTA 200, and it can be controlled by the auxiliary bias current Iab, The variables k and Vth are the transconductance parameter and the threshold voltage of the MN transistor of
Combining the circuits 20a through 20f of
As a proof of concept, the circuit 400 was used to simulate the nonlinear function of equation (9) using PSPICE with 0.5 μm CMOS parameters.
y=0.5x+0.05x2−0.3x3+0.8x4+23.5x5 (9)
The power supply voltages used are VDD=−VSS=1.5V, VGG
The simulation results obtained, together with equation (9), are shown in
The circuit of
It is to be understood that the present invention is not limited to the embodiments described above, but encompasses any and all embodiments within the scope of the following claims.