Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture

Information

  • NSF Award
  • 2328908
Owner
  • Award Id
    2328908
  • Award Effective Date
    10/1/2023 - 8 months ago
  • Award Expiration Date
    9/30/2026 - 2 years from now
  • Award Amount
    $ 117,187.00
  • Award Instrument
    Continuing Grant

Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture

Nontechnical description:<br/>This interdisciplinary research project focuses on the synthesis of new materials which have a high electrical conductivity for small wires. This is important because more powerful and energy-efficient computers require smaller wires to connect the switches (transistors) as well as the memory elements. The key idea is to use a new type of materials for which electrons cannot be scattered at the wire surfaces. The project discovers such new materials and develops methods for their synthesis and integration into computer chip manufacturing, facilitating more powerful and energy-efficient chips used in devices ranging from smartphones to large data centers. The project includes a multifaceted education and workforce development initiative, involving education leaders from Historically Black Colleges and Universities and Minority Serving Institutions, scientists from research intensive universities, and development engineers from companies in the semiconductor industry. These initiatives are designed to increase diversity, quality, and quantity of the USA-based semiconductor chip manufacturing workforce.<br/> <br/>Technical description:<br/>This project aims to control the synthesis of new high-conductivity electrical interconnect materials and to co-design the conductor materials with the back-end dielectric to achieve a conductivity advantage over existing Cu technology in future integrated circuits. This involves exploiting scattering-immune surface transport in topological metals, tuning their Fermi level through strain and dielectric engineering for maximum topological effects, and achieving crystal orientation/chirality control for high conductivity in topological and anisotropic metals. The project uses a tight integration of complementary novel synthesis methods, high-throughput characterization, ab-initio electron transport calculations, as well as strain, dielectric and contact engineering. More specifically, it includes synthesis of topological and directional interconnect conductors using complementary techniques to prototype several classes of materials for the future semiconductor industry, co-design crystal growth orientation and chirality with electron transport to leverage favorable conduction including scattering-immune unidirectional surface transport in Weyl semimetals, and tuning of the Fermi level to Weyl nodes by elastic strain.<br/><br/>This project is co-funded by the Historically Black Colleges and Universities Undergraduate Program (HBCU-UP), which provides awards to strengthen STEM undergraduate education and research at HBCUs.<br/><br/>This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

  • Program Officer
    Z. Yingcying@nsf.gov7032928428
  • Min Amd Letter Date
    9/13/2023 - 8 months ago
  • Max Amd Letter Date
    9/13/2023 - 8 months ago
  • ARRA Amount

Institutions

  • Name
    University of Notre Dame
  • City
    NOTRE DAME
  • State
    IN
  • Country
    United States
  • Address
    940 Grace Hall
  • Postal Code
    465565708
  • Phone Number
    5746317432

Investigators

  • First Name
    Christopher
  • Last Name
    Hinkle
  • Email Address
    chinkle@nd.edu
  • Start Date
    9/13/2023 12:00:00 AM

Program Element

  • Text
    FuSe-Future of Semiconductors

Program Reference

  • Text
    Microelectronics and Semiconductors
  • Text
    SEBML-MOORE'S LAW
  • Code
    6863
  • Text
    NANO NON-SOLIC SCI & ENG AWD
  • Code
    7237