Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology

Information

  • NSF Award
  • 2328841
Owner
  • Award Id
    2328841
  • Award Effective Date
    11/1/2023 - a year ago
  • Award Expiration Date
    10/31/2026 - a year from now
  • Award Amount
    $ 115,241.00
  • Award Instrument
    Continuing Grant

Collaborative Research: FuSe:Substrate-inverted Multi-Material Integration Technology

Heterogeneous integration of new materials promises to significantly expand the range of capabilities accessible by silicon photonic integrated circuits (PICs). However, classical integration protocols require custom deep etching through the top layers to access the photonic devices underneath, and thus face severe limitations in integration capacity, density, and process complexity. This program will explore co-design of new materials, integration processes, device architectures, and packaging solutions to realize a transformative universal heterogeneous integration platform: Substrate-inverted Multi-Material Integration Technology (SuMMIT). Upon success, the SuMMIT platform will significantly expand and expedite heterogeneous photonic integration of new materials—a key driving force for PIC technology advances. The program will also strengthen academia-industry partnership and workforce development through development of both online and in-person photonics training programs.<br/><br/>The SuMMIT integration scheme leverages advanced wafer-scale 3-D packaging technologies such as through-Si vias and direct bond interconnects to enable seamless integration of materials traditionally considered incompatible with complementary metal-oxide semiconductor processing. Another innovative aspect of the proposed scheme is the use of through-Si vias to establish a bi-facial electrical and optical interconnect configuration, which offers much higher interconnect density and improved electrical performance such as latency and power consumption as compared to peripheral wire-bonding. Furthermore, the SuMMIT platform opens up a plethora of design concepts creatively re-purposing existing components and structures in industry-standard PICs towards facilitating heterogeneous integration. The program’s focus on building on standard PIC processes and structures with minimal customization facilitates industry adoption of the innovations and their integration into the existing semiconductor manufacturing ecosystem.<br/><br/>This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

  • Program Officer
    Prem Chahalpchahal@nsf.gov7032927264
  • Min Amd Letter Date
    9/13/2023 - a year ago
  • Max Amd Letter Date
    9/13/2023 - a year ago
  • ARRA Amount

Institutions

  • Name
    Dartmouth College
  • City
    HANOVER
  • State
    NH
  • Country
    United States
  • Address
    7 LEBANON ST
  • Postal Code
    037552170
  • Phone Number
    6036463007

Investigators

  • First Name
    Jifeng
  • Last Name
    Liu
  • Email Address
    Jifeng.Liu@Dartmouth.EDU
  • Start Date
    9/13/2023 12:00:00 AM

Program Element

  • Text
    FuSe-Future of Semiconductors

Program Reference

  • Text
    Microelectronics and Semiconductors
  • Text
    EXP PROG TO STIM COMP RES
  • Code
    9150