Color cathode ray tube apparatus

Information

  • Patent Grant
  • 6489736
  • Patent Number
    6,489,736
  • Date Filed
    Thursday, September 21, 2000
    24 years ago
  • Date Issued
    Tuesday, December 3, 2002
    22 years ago
Abstract
An electron gun assembly has at least one additional electrode located along the equipotential plane of a potential distribution formed between a focusing electrode and anode electrode forming a main lens. In a no-deflection state, the additional electrode receives a voltage of a predetermined level corresponding to the potential of the equipotential plane on which the additional electrode is located. In a deflection state, letting Vf be the application voltage of the focusing electrode, Eb be the application voltage of the anode electrode, and Vs be the application voltage of the addition electrode, a value (Vs−Vf)/(Eb−Vf) changes with an increase in electron beam deflection amount, while the additional electrode forms an electron lens having different focusing powers in the horizontal direction and vertical direction.
Description




TECHNICAL FIELD




The present invention relates to a color cathode ray tube apparatus and, more particularly, to a color cathode ray tube apparatus for reducing the elliptic distortion of a beam spot at the periphery of a screen and displaying a high-quality image.




BACKGROUND ART




A color cathode ray tube apparatus has an envelope made up of a panel and funnel. The funnel incorporates in its neck an electron gun assembly for emitting three electron beams, i.e., a center beam and a pair of side beams that pass through the same horizontal plane. A deflection yoke for forming a nonuniform magnetic field for deflecting the three electron beams is mounted on the funnel. The nonuniform magnetic field is formed from a pincushion type horizontal deflection magnetic field and barrel type vertical deflection magnetic field.




Three electron beams emitted by the electron gun assembly are focused on a phosphor screen while being converged to the entire surface of the phosphor screen formed on the inner surface of the panel through a shadow mask by the nonuniform magnetic field. Then, a color image is displayed.




The color cathode ray tube apparatus adopts, e.g., a BPF (Bi-Potential Focus) DAC&F (Dynamic Astigmatism Correction and Focus) type electron gun assembly.




As shown in

FIG. 1

, this electron gun assembly has three cathodes K aligned in a line, and a first grid G


1


, second grid G


2


, third grid G


3


made up of a first segment G


31


and second segment G


32


, and fourth grid G


4


which are sequentially laid out in a tube axis direction from the cathode K to the phosphor screen. Each grid has three electron beam apertures formed in correspondence with the three cathodes K.




In the electron gun assembly, the cathode K receives a voltage prepared by superposing a video signal on a reference voltage of 150 V. The first grid G


1


is grounded, and the second grid G


2


receives a voltage of about 600 V. The first segment G


31


of the third grid G


3


receives a voltage of about 6 kV, and the second segment G


32


thereof receives a variable voltage prepared by superposing a parabolic voltage on a reference voltage of about 6 kV. This parabolic voltage increases with an increase in electron beam deflection amount, and maximizes for the maximum deflection amount, i.e., in deflecting an electron beam to the corner of the phosphor screen. The fourth grid G


4


receives a voltage of about 26 kV.




The cathodes K, first grid G


1


, and second grid G


2


constitute an electron beam generator for generating an electron beam and forming an object point with respect to a main lens (to be described later). The second grid G


2


and the first segment G


31


of the third grid G


3


constitute a pre-focusing lens for preliminarily focusing the generated electron beam. The second segment G


32


of the third grid G


3


and the fourth grid G


4


constitute a BPF type main lens for finally accelerating and focusing the preliminarily focused electron beam on the phosphor screen.




When the electron beam is deflected to the corner of the phosphor screen, the potential difference between the second segment G


32


and fourth grid G


4


minimizes to minimize the power of the main lens. At the same time, the maximum potential difference occurs between the first and second segments G


31


and G


32


to form a quadrupole lens for horizontally focusing an electron beam and vertically diverging it. The power of the quadrupole lens at that time is maximum.




When the electron beam is deflected to the corner of the phosphor screen, the distance from the electron gun assembly to the phosphor screen becomes maximum, and the distance from the object point to the image point becomes longer. An increase in distance from the object point to the image point is compensated by weakening the power of the main lens. The deflection aberration of the nonuniform magnetic field formed by the deflection yoke is compensated by the action of a quadrupole lens formed between the first and second segments G


31


and G


32


.




To improve the image quality of the color cathode ray tube apparatus, the focusing characteristic and beam spot shape on the phosphor screen must be improved. Particularly in an in-line type color cathode ray tube apparatus for emitting three electron beams in a line, a beam spot


1


at the center of the screen can be made circular, as shown in FIG.


2


. However, a beam spot


1


at the periphery extending from the end of the horizontal axis (X-axis) to the end of the diagonal axis (D-axis) elliptically distorts (vertically collapses) and causes a blur


2


owing to the deflection aberration.




The blur


2


of the beam spot


1


can be eliminated, as shown in

FIG. 3

, by adopting the DAC&F method of dividing a low-voltage electrode forming a main lens into a plurality of segments, like the third grid G


3


of the electron gun assembly. However, the elliptic distortion of the beam spot


1


at the periphery of the screen cannot be eliminated. This elliptic distortion interferes with the electron beam aperture of the shadow mask to generate moire, which makes it difficult to see the display contents.




The vertical collapse of the beam spot


1


at the periphery will be explained with reference to optical models shown in

FIGS. 4 and 5

. In a no-deflection state in which an electron beam is focused on the center of the screen, an electron beam


8


generated by the electron beam generator is preliminarily focused by a pre-focusing lens, and focused on a phosphor screen


5


by a main lens


4


. In a deflection state in which an electron beam is deflected to the periphery of the phosphor screen, the electron beam


8


is preliminarily focused by the pre-focusing lens, passes through a quadrupole lens


6


, and deflected by a deflection magnetic field


7


having a quadrupole component while being focused on the phosphor screen


5


by the main lens


4


. Then, the electron beam


8


is focused on the phosphor screen


5


.




In general, the beam spot size on the screen depends on a magnification M. The magnification M is given by the ratio α


0


/αi of a divergent angle α


0


and incident angle αi of the electron beams


8


. Letting Mh be the horizontal magnification, Mv be the vertical magnification, α


0


h be the horizontal divergent angle, αih be the horizontal incident angle, α


0


v be the vertical divergent angle, and αiv be the vertical incident angle, the horizontal and vertical magnifications Mh and Mv are given by








Mh=α




0




h/αih












Mv=α




0




h/αiv








If




 α


0




h





0




v






the above components satisfy






α


ih=αiv












Mh=Mv








in the no-deflection state shown in FIG.


4


.




The beam spot at the center of the screen becomes circular. To the contrary, in the deflection state shown in

FIG. 5

, the above components change to






α


ih<αiv












Mh>Mv.








The beam spot extends along the D-axis at the periphery.




As described above, to improve the image quality of the color cathode ray tube apparatus, the focusing characteristic and beam spot shape on the phosphor screen must be improved.




As for the focusing characteristic and beam spot shape, the conventional BPF DAC&F type electron gun assembly changes the power of the main lens along with changes in electron beam deflection amount. In addition, the electron gun assembly forms a dynamically changing quadrupole lens to eliminate any vertical blur of the beam spot caused by the deflection aberration and focus the electron beam on the entire screen.




However, the elliptic distortion of the beam spot at the periphery cannot be eliminated. This elliptic distortion may interfere with the electron beam apertures of the shadow mask to generate moire, degrading the display quality.




DISCLOSURE OF INVENTION




The present invention has been made to overcome the conventional drawbacks, and has as its object to provide a color cathode ray tube apparatus for reducing the elliptic distortion of a beam spot on the entire screen and displaying a high-quality image.




According to the present invention, there is provided a color cathode ray tube apparatus comprising an electron gun assembly having a main lens which is made up of at least a focusing electrode and anode electrode, and accelerates and focuses an electron beam on a phosphor screen, and a deflection yoke for generating a deflection magnetic field for deflecting the electron beam emitted by the electron gun assembly, wherein the electron gun assembly has at least one additional electrode located along an equipotential plane of a potential distribution formed between the focusing electrode and anode electrode forming the main lens, in a no-deflection state in which the electron beam is focused on a center of the phosphor screen, the additional electrode receives a voltage of a predetermined level corresponding to a potential of the equipotential plane on which the additional electrode is located, and in a deflection state in which the electron beam is deflected to a periphery of the phosphor screen, letting Vf be an application voltage of the focusing electrode, Eb be an application voltage of the anode electrode, and Vs be an application voltage of the additional electrode, a value






(Vs−Vf)/(Eb−Vf)






changes with an increase in electron beam deflection amount, while the additional electrode forms an electron lens having different horizontal and vertical focusing powers.




According to the present invention, there is provided a color cathode ray tube apparatus comprising an electron gun assembly having a main lens which is made up of at least a focusing electrode and anode electrode, and accelerates and focuses an electron beam on a phosphor screen, and a deflection yoke for generating a deflection magnetic field for deflecting the electron beam emitted by the electron gun assembly, wherein the electron gun assembly has at least one additional electrode located along an equipotential plane of a potential distribution formed between the focusing electrode and anode electrode forming the main lens, in a predetermined deflection state in which the electron beam is deflected, the additional electrode receives a voltage of a predetermined level corresponding to a potential of the equipotential plane on which the additional electrode is located, and in a deflection state in which the electron beam is deflected to a periphery of the phosphor screen, letting Vf be an application voltage of the focusing electrode, Eb be an application voltage of the anode electrode, and Vs be an application voltage of the additional electrode, a value






(Vs−Vf)/(Eb−Vf)






changes with an increase in electron beam deflection amount, while the additional electrode forms an electron lens having different horizontal and vertical focusing powers.











BRIEF DESCRIPTION OF DRAWINGS





FIG. 1

is a view showing the arrangement of a BPF DAC&F type electron gun assembly for a conventional color cathode ray tube apparatus;





FIG. 2

is a graph showing the shape of a beam spot on the phosphor screen of a conventional in-line type color cathode ray tube apparatus;





FIG. 3

is a graph showing the shape of a beam spot on the phosphor screen of a color cathode ray tube apparatus having the electron gun assembly shown in

FIG. 1

;





FIG. 4

is a view showing an optical model in the no-deflection state of the color cathode ray tube apparatus having the electron gun assembly shown in

FIG. 1

;





FIG. 5

is a view showing an optical model in the deflection state of the color cathode ray tube apparatus having the electron gun assembly shown in

FIG. 1

;





FIG. 6

is a sectional view showing the arrangement of a color cathode ray tube apparatus according to the present invention;





FIG. 7

is a sectional view showing the arrangement of an electron gun assembly according to the first embodiment applied to the color cathode ray tube apparatus shown in

FIG. 6

;





FIG. 8

is a perspective view showing the structure of an additional electrode applied to the electron gun assembly shown in

FIG. 7

;





FIG. 9A

is a graph showing a variable voltage applied to the focusing electrode of the electron gun assembly shown in

FIG. 7

, and





FIG. 9B

is a graph showing a deflection current supplied to a deflection yoke;





FIG. 10A

is a view showing the horizontal and vertical electric fields of a rotation-symmetrical BPF type main lens, and





FIG. 10B

is a graph showing a potential distribution on the central axis between the focusing electrode and anode electrode;





FIG. 11A

is a view showing horizontal and vertical electric fields when the additional electrode is inserted in the rotation-symmetrical BPF type main lens, and





FIG. 11B

is a graph showing a potential distribution on the central axis between the focusing electrode and anode electrode;





FIG. 12A

is a view showing horizontal and vertical electric fields when the additional electrode is inserted in the rotation-symmetrical BPF type main lens and set to a different potential, and





FIG. 12B

is a graph showing a potential distribution on the central axis between the focusing electrode and anode electrode;





FIG. 13A

is a view showing horizontal and vertical electric fields when the additional electrode is inserted in the rotation-symmetrical BPF type main lens and set to another different potential, and





FIG. 13B

is a graph showing a potential distribution on the central axis between the focusing electrode and anode electrode;





FIG. 14

is a view showing an optical model for explaining the basic arrangement of an electron gun assembly applied to a color cathode ray tube apparatus according to an embodiment of the present invention;





FIG. 15

is a graph for explaining reduction of the elliptic distortion of a beam spot on the phosphor screen by the electron gun assembly shown in

FIG. 14

;





FIG. 16

is a sectional view showing the arrangement of an electron gun assembly according to the second embodiment applied to the color cathode ray tube apparatus shown in

FIG. 6

;





FIG. 17

is a perspective view showing the structure of an additional electrode applied to the electron gun assembly shown in

FIG. 16

;





FIG. 18

is a perspective view showing the structure of another additional electrode applied to the electron gun assembly shown in

FIG. 16

;





FIG. 19A

is a graph showing a variable voltage applied to the additional electrode of the electron gun assembly shown in

FIG. 16

, and





FIG. 19B

is a graph showing a deflection current supplied to the deflection yoke;





FIG. 20

is a sectional view showing the arrangement of an electron gun assembly according to the third embodiment applied to the color cathode ray tube apparatus shown in

FIG. 6

;





FIG. 21

is a view showing an optical model for explaining the basic arrangement of a double quadrupole lens type electron gun assembly applied to a color cathode ray tube apparatus according to an embodiment of the present invention;





FIG. 22

is a graph for explaining reduction of the elliptic distortion of a beam spot on the phosphor screen by the electron gun assembly shown in

FIG. 21

;





FIG. 23

is a sectional view showing the arrangement of an electron gun assembly according to the fourth embodiment applied to the color cathode ray tube apparatus shown in

FIG. 6

; and





FIG. 24

is a sectional view showing the arrangement of an electron gun assembly according to the fifth embodiment applied to the color cathode ray tube apparatus shown in FIG.


6


.











BEST MODE FOR CARRYING OUT THE INVENTION




Embodiments of a color cathode ray tube apparatus according to the present invention will be described in detail below with reference to the several views of the accompanying drawing.




As shown in

FIG. 6

, a color cathode ray tube apparatus


1


has an envelope made up of a panel


17


and funnel


18


. A phosphor screen


5


made up of phosphor layers of three colors for emitting blue, green, and red beams is formed on the inner surface of the panel


17


. The panel


17


incorporates a shadow mask


19


having many electron beam apertures so as to face the phosphor screen


5


.




The funnel


18


incorporates an in-line type electron gun assembly


22


in a neck


21


. The electron gun assembly


22


emits three electron beams


8


(B, G, and R) in a line, i.e., a center beam


8


G and a pair of side beams


8


B and


8


R that pass through the same horizontal plane. A deflection yoke


25


is mounted on the outer surface of the funnel


18


from a large-diameter portion


24


to the neck


21


. The deflection yoke


25


forms a nonuniform magnetic field for converging three electron beams emitted by the electron gun assembly


22


toward the phosphor screen


5


, and focusing the beams on the phosphor screen


5


. The nonuniform magnetic field is formed from a pincushion type horizontal deflection magnetic field and barrel type vertical deflection magnetic field.




The three electron beams


8


(B, G, and R) emitted by the electron gun assembly


22


are deflected by the nonuniform magnetic field to vertically and horizontally scan the phosphor screen


5


through the shadow mask


19


. Then, a color image is displayed.




As shown in

FIG. 7

, the electron gun assembly


22


applied to the above-described color cathode ray tube apparatus has three cathodes K aligned in a line in Ail the horizontal direction (X), three heaters (not shown) for individually heating the cathodes K, a first grid G


1


, second grid G


2


, a third grid G


3


, an additional electrode Gs, and a fourth grid G


4


. These five electrodes are sequentially laid out from the cathode K to the phosphor screen. The heaters, cathodes K, and five electrodes are integrally fixed by a pair of insulator supports (not shown).




The first and second grids G


1


and G


2


are formed from plate-like electrodes. Each plate-like electrode has three electron beam apertures formed in a line in correspondence with the three cathodes K. The third grid G


3


is formed from a cylindrical electrode. Each of the two end faces of the cylindrical electrode has three electron beam apertures formed in a line in correspondence with the three cathodes K. The fourth grid G


4


is formed from a cup-like electrode. The end face of the cup-like electrode facing the third grid G


3


has three electron beam apertures formed in a line in correspondence with the three cathodes K.




The additional electrode Gs inserted between the third and fourth grids G


3


and G


4


is formed from a plate-like electrode. As shown in

FIG. 8

, the plate-like electrode has three electron beam apertures


15


formed in a line in correspondence with the three cathodes K. Each electron beam aperture


15


is formed into a vertically elongated uncircular shape having a larger diameter in the vertical direction (Y) than in the horizontal direction (X).




The cathode K receives a voltage prepared by superposing a video signal on a DC voltage of 150 V. The first grid G


1


is grounded. The second grid G


2


receives a DC voltage of about 600 V. The third grid G


3


receives a variable voltage


28


(Vf) prepared by superposing a parabolically changing voltage on a DC voltage of about 6 kV. As shown in

FIGS. 9A and 9B

, the variable voltage


28


increases in synchronism with a sawtooth-like deflection current


27


along with an increase in electron beam deflection amount. The additional electrode Gs receives a DC voltage (Vs) of about 16 kv. The fourth grid G


4


receives a DC voltage (Eb) of about 26 kV.




The cathodes K, first grid G


1


, and second grid G


2


constitute an electron beam generator for generating an electron beam and forming an object point with respect to a main lens (to be described later). The second and third grids G


2


and G


3


constitute a pre-focusing lens for preliminarily focusing the electron beam generated by the electron beam generator. The third grid G


3


(focusing electrode), additional electrode Gs, and fourth grid G


4


(anode electrode) constitute a BPF type main lens for finally focusing on the phosphor screen


5


the electron beam preliminarily focused by the pre-focusing lens. In deflecting the electron beam, the main lens internally forms a quadrupole lens. The lens power of the quadrupole lens dynamically changes with changes in electron beam deflection amount.




A method of forming the dynamically changing quadrupole lens in the main lens, and the action of the quadrupole lens will be described.




As shown in

FIGS. 10A and 10B

, the rotation-symmetrical BPF type main lens is formed by a potential difference between a focusing electrode Gf which receives 6 kV, and anode electrode Ga which receives 26 kV. As shown in

FIG. 1A

, the main lens forms an electric field symmetrical in the horizontal direction (X) and vertical direction (Y), like an equipotential plane


10


, and gives the same focusing power to the electron beam


8


in both the horizontal and vertical directions. As shown in

FIG. 10B

, the main lens forms, on a central axis


12


between the focusing electrode Gf and anode electrode Ga, a potential distribution


11


in which the potential increases along the traveling direction of the electron beams


8


. For the lens shown in

FIGS. 10A and 10B

, an equipotential plane


13


formed at the geometrical center of the main lens is flat, and the potential on this plane is 16 kV.




In the electron gun assembly


22


of the color cathode ray tube apparatus


1


, as shown in

FIG. 11A

, the additional electrode Gs like the one shown in

FIG. 8

is located at the geometrical center of the rotation-symmetrical BPF type main lens, i.e., the equipotential plane


13


. As described above, the additional electrode Gs has the vertically elongated uncircular electron beam aperture


15


with a larger diameter in the vertical direction (Y) than in the horizontal direction (X). If the same potential as the equipotential plane


13


, i.e., a potential of 16 kV is applied to the additional electrode Gs, the main lens obtains on the central axis


12


the same potential distribution


11


as that obtained when no additional electrode Gs is located, as shown in FIG.


11


B. That is, the main lens shown in

FIG. 11A

forms the same distribution of the equipotential plane


10


as the main lens shown in

FIG. 10A

, and gives the same focusing power to the electron beam


8


in both the horizontal and vertical directions.




However, if a potential lower than the potential (16 kV) of the equipotential plane


13


is applied to the additional electrode Gs, the potential penetrates from the anode electrode Ga into the focusing electrode Gf through the electron beam aperture


15


of the additional electrode Gs to form an aperture lens, as shown in FIG.


12


A. At this time, as shown in

FIG. 12B

, the main lens forms near the additional electrode Gs on the central axis


12


a potential distribution


11




a


lower than the potential distribution


11


shown in

FIGS. 11A and 11B

.




In the case in which a potential lower than that of the equipotential plane


13


is applied to the additional electrode Gs, the electron beam aperture


15


of the additional electrode Gs is vertically elongated, and thus the curvature in the horizontal direction (X) becomes smaller than in the vertical direction (Y) on the equipotential plane which penetrates into the focusing electrode Gf through the electron beam aperture


15


. The focusing power of the main lens in the horizontal direction (X) becomes stronger than in the vertical direction (Y). As a result, the main lens attains astigmatism.




If a potential higher than the potential (16 kV) of the equipotential plane


13


is applied to the additional electrode Gs, the potential penetrates from the focusing electrode Gf into the anode electrode Ga through the electron beam aperture


15


of the additional electrode Gs to form an aperture lens, as shown in FIG.


13


A. At this time, as shown in

FIG. 13B

, the main lens forms near the additional electrode Gs on the central axis


12


a potential distribution


11




b


higher than the potential distribution


11


shown in

FIGS. 11A and 11B

.




In the case in which a potential higher than that of the equipotential plane


13


is applied to the additional electrode Gs, the electron beam aperture


15


of the additional electrode Gs is vertically elongated, and thus the curvature in the horizontal direction (X) becomes smaller than in the vertical direction (Y) on the equipotential plane which penetrates into the anode electrode Ga through the electron beam aperture


15


. The focusing power of the main lens in the horizontal direction (X) becomes weaker than in the vertical direction (Y). As a result, the main lens attains astigmatism reverse to that of the main lens shown in

FIGS. 12A and 12B

.




That is, in the BPF type main lens applied to the color cathode ray tube, the additional electrode Gs is inserted between the focusing electrode Gf and anode electrode Ga, and receives a predetermined potential. Hence, the main lens can attain astigmatism for adjusting the horizontal and vertical focusing powers without reducing the aperture.




In the above description, the astigmatism of the main lens is adjusted by changing the potential of the additional electrode. In general, letting Vf be the voltage of the focusing electrode, Eb be the voltage of the anode electrode, and Vs be the voltage of the additional electrode, the astigmatism can be similarly adjusted by changing






(Vs−Vf)/(Eb−Vf).






In the electron gun assembly


22


according to the first embodiment shown in

FIG. 7

, the application voltage Vs of the additional electrode Gs and the application voltage Eb of the fourth grid G


4


corresponding to the anode electrode Ga are fixed, whereas the application voltage Vf of the third grid G


3


corresponding to the focusing electrode Gf is changed with changes in electron beam deflection amount, thereby changing






(Vs−Vf)/(Eb−Vf).






In a no-deflection state, an electron beam generated by the electron beam generator is preliminarily focused by the pre-focusing lens made up of the second and third grids G


2


and G


3


. The preliminarily focused electron beam is focused on the center of the phosphor screen by the main lens made up of the third grid G


3


, additional electrode Gs, and fourth grid G


4


. The main lens does not have any astigmatism, and gives the same focusing power to the electron beam in both the horizontal and vertical directions. Thus, the beam spot on the phosphor screen becomes almost circular.




In a deflection state, as the electron beam is deflected to the periphery of the phosphor screen, the application voltage Vf of the third grid G


3


increases to decrease






(Vs−Vf)/(Eb−Vf).






Since the additional electrode Gs has the vertically elongated electron beam aperture


15


, the horizontal focusing power to the electron beam becomes stronger than the vertical focusing power. At the same time, the potential difference between the third and fourth grids G


3


and G


4


decreases to decrease the horizontal and vertical focusing powers to the electron beam.




The horizontal focusing power which is strengthened by the additional electrode Gs is set to cancel the horizontal focusing power which is weakened by a decrease in potential difference between the third and fourth grids G


3


and G


4


. This arrangement can establish electron beam focusing conditions even at the periphery of the screen. The main lens having astigmatism can reduce the elliptic distortion of the beam spot at the periphery of the screen.





FIG. 14

is a view showing an optical model for explaining the action of the main lens in deflection.




In deflection, as shown in

FIG. 14

, a main lens


4


internally forms a quadrupole lens


6


having different horizontal and vertical focusing powers with respect to an electron beam


8


by changing the application voltage of the third grid G


3


along with changes in deflection amount of the electron beams


8


.




Letting α


0


h


1


be a divergent angle in the horizontal direction (X), αih


1


be an incident angle in the horizontal direction (X), α


0


v


1


be a divergent angle in the vertical direction (Y), αiv


1


be an incident angle in the vertical direction (Y), a magnification Mh


1


in the horizontal direction (X), and a magnification Mv


1


in the vertical direction (Y), the magnifications Mh


1


and Mv


1


are given by








Mh




1





0




h




1





ih




1












Mv




1





0




v




1





iv




1


.






The quadrupole lens


6


formed inside the main lens


4


is formed closer to a quadrupole lens


7


formed by a deflection magnetic field than a quadrupole lens


6


formed in front of the main lens


4


as shown in FIG.


5


.




If






α


0




h





0




h




1










α


0




v





0




v




1








the incident angles satisfy






α


ih<αih




1










α


iv>αiv




1








This results in







Mh




1


<Mh








Mv




1


>Mv.






As shown in

FIG. 5

, in the conventional electron gun assembly, the horizontal and vertical magnifications Mh and Mv given by








Mh





0




h/αih












Mv





0




v/αiv.








have a relation:






α


ih<αiv








because at the periphery of the screen








Mh>Mv.








As a result, the beam spot elliptically distorts.




To the contrary, in the electron gun assembly according to the first embodiment, αih


1


can be made larger than αih, and αiv


1


can be made smaller than αiv. This results in








Mh




1


<


Mh












Mh




1


>


Mv.








For this reason, the difference between the horizontal and vertical magnifications Mh and Mv can be reduced. As shown in

FIG. 15

, the elliptic distortion of a beam spot


1


can be reduced at the periphery of the screen extending from the end of the horizontal axis (X) to the end of the diagonal axis (D).




When the main lens made up of the third grid, additional electrode Gs, and fourth grid G


4


has a stronger horizontal focusing power than the vertical focusing power, the application voltage of the additional electrode Gs is set lower than the potential of the equipotential plane


13


corresponding to the layout position of the additional electrode Gs in a no-deflection state, thereby obtaining the same effects as described above. Alternatively, a parabolic variable voltage which increases with an increase in deflection amount is applied to the third grid G


3


to decrease






(Vs−Vf)/(Eb−Vf).






The horizontal focusing power which is strengthened by the additional electrode Gs is set to cancel the horizontal focusing power which is weakened by a decrease in potential difference between the third and fourth grids G


3


and G


4


. This arrangement can realize a color cathode ray tube apparatus having the same effects as described above.




The arrangement of an electron gun assembly according to the second embodiment will be described.




As shown in

FIG. 16

, an electron gun assembly


22


according to the second embodiment has almost the same arrangement as that of the electron gun assembly shown in

FIG. 7. A

detailed description of the electron gun assembly


22


will be omitted, and only a different part will be described.




As shown in

FIG. 17

or


18


, an additional electrode Gs has three or one horizontally elongated uncircular electron beam aperture


15


with a larger diameter in the horizontal direction (X) than in the vertical direction (Y). As shown in

FIG. 19A

, the additional electrode Gs receives a variable voltage


30


(Vs) prepared by superposing a parabolically changing voltage on a DC voltage of about 16 kV. As shown in

FIGS. 19A and 19B

, this parabolic voltage increases in synchronism with a sawtooth-like deflection current


27


along with an increase in electron beam deflection amount. The parabolic variable voltage


30


has almost the same amplitude as a variable voltage


28


applied to a third grid G


3


like the one shown in FIG.


9


A.




Also with this arrangement, in a no-deflection state, an electron beam preliminarily focused by a pre-focusing lens is focused on the center of the phosphor screen by the main lens. The main lens does not have any astigmatism, and gives the same focusing power to the electron beam in both the horizontal and vertical directions. Thus, the beam spot on the phosphor screen becomes almost circular, as shown in FIG.


15


.




In a deflection state, as the electron beam is deflected to the periphery of the phosphor screen, the application voltage Vf of the third grid G


3


increases. In synchronism with this, as the electron beam is deflected to the periphery of the phosphor screen, the application voltage Vs of the additional electrode Gs increases to increase






(Vs−Vf)/(Eb−Vf).






Since the additional electrode Gs has the horizontally elongated electron beam aperture


15


, the horizontal focusing power to the electron beam becomes stronger than the vertical focusing power. At the same time, the potential difference between the third grid G


3


and a fourth grid G


4


decreases to simultaneously decrease the horizontal and vertical focusing powers to the electron beam.




The horizontal focusing power which is strengthened by the additional electrode Gs is set to cancel the horizontal focusing power which is weakened by a decrease in potential difference between the third and fourth grids G


3


and G


4


. This arrangement can establish electron beam focusing conditions even at the periphery of the screen. The main lens having astigmatism can reduce the elliptic distortion of a beam spot at the periphery of the screen, as shown in FIG.


15


.




When the main lens made up of the third grid, additional electrode Gs, and fourth grid G


4


has a stronger horizontal focusing power than the vertical focusing power, the application voltage of the additional electrode Gs is set higher than the potential of an equipotential plane


14


corresponding to the layout position of the additional electrode Gs in a no-deflection state, thereby obtaining the same effects as described above. Alternatively, a parabolic variable voltage which increases with an increase in deflection amount is applied to the third grid G


3


to increase






(Vs−Vf)/(Eb−Vf).






The horizontal focusing power which is strengthened by the additional electrode Gs is set to cancel the horizontal focusing power which is weakened by a decrease in potential difference between the third and fourth grids G


3


and G


4


. This arrangement can realize a color cathode ray tube apparatus having the same effects as described above.




As described above, at least one additional electrode is inserted between the focusing electrode and anode electrode forming the main lens for finally focusing an electron beam on the phosphor screen. This main lens is given astigmatism which dynamically changes. This arrangement can constitute a color cathode ray tube apparatus which can reduce the elliptic distortion of a beam spot on the entire screen, and displays a high-quality image.




The arrangement of an electron gun assembly according to the third embodiment will be described.




In the electron gun assembly according to the first and second embodiments, the beam spot focused on the center of the phosphor screen is made circular, and the elliptic distortion of a beam spot focused on the periphery can be reduced. The electron gun assembly according to the third embodiment can further reduce the elliptic distortion of the beam spot at the periphery.




The electron gun assembly according to the third embodiment comprises two quadrupole lenses.




For example, in a double quadrupole lens type electron gun assembly having a third grid made up of three segments, first and second quadrupole lenses are formed in front of the main lens. The first quadrupole lens is formed between the first and second segments, and has horizontal divergent action and vertical convergent action. The second quadrupole lens is formed between the second and third segments, and has horizontal convergent action and vertical divergent action.




In the theory of magnification, this double quadrupole lens type electron gun assembly can form a circular beam spot on the entire phosphor screen. In practice, however, a vertical diameter Ssv of the beam spot is increased, but a horizontal diameter Ssh is not decreased, and the average diameter ((Ssv+Ssh)/2) of the beam spot is increased. Consequently, the beam spot on the screen enlarges to degrade the image quality.




In the double quadrupole lens type electron gun assembly, the electron beam is greatly influenced by aberrations contained in the first and second quadrupole lenses, and thus the horizontal diameter of the beam spot on the screen cannot be satisfactorily reduced. This also results from a large diameter of an electron beam incident on the main lens and a large influence of spherical aberration contained in the main lens.




For this reason, the electron gun assembly according to the third embodiment adopts the double quadrupole lens scheme in which the first quadrupole lens is formed in front of the main lens and the second quadrupole lens is formed at the center of the main lens. This electron gun assembly basically eliminates the difference between the horizontal and vertical magnifications Mh and Mv, and reduces the aberrations of the quadrupole lens and main lens.




More specifically, as shown in

FIG. 20

, an electron gun assembly


22


according to the third embodiment has almost the same arrangement as that of the electron gun assembly shown in

FIG. 7. A

detailed description of the electron gun assembly


22


will be omitted, and only a different part will be described.




A third grid G


3


has a first segment G


31


adjacent to a second grid G


2


, and a second segment G


32


adjacent to an additional electrode Gs. The first and second segments G


31


and G


32


are formed from cylindrical electrodes.




Each of the two end faces of each cylindrical electrode has three cathodes K aligned in a line in correspondence with three cathodes K. The three electron beam apertures of the first segment G


31


formed on the second segment G


32


side have a vertically elongated uncircular shape with a larger vertical diameter than the horizontal diameter. The three electron beam apertures of the second segment G


32


formed on the first segment G


31


side have a horizontally elongated uncircular shape with a larger horizontal diameter than the vertical diameter.




The additional electrode Gs is formed from a plate-like electrode inserted between the second segment G


32


and a fourth grid G


4


. This plate-like electrode has three vertically elongated uncircular electron beam apertures


15


, as shown in FIG.


8


.




The first segment G


31


of the third grid G


3


receives a DC voltage of about 6 kV. The second segment G


32


receives a variable voltage


28


(Vf) like the one shown in FIG.


9


A. The additional electrode Gs receives a DC voltage (Vs) of about 16 kV.




In a no-deflection state, the first and second segments G


31


and G


32


of the third grid G


3


have the same potential, and do not form any electron lens between them. The main lens made up of the second segment G


32


, additional electrode Gs, and fourth grid G


4


does not have any astigmatism, i.e., any quadrupole lens action. Therefore, an electron beam emitted by the electron beam generator is preliminarily focused by the prefocusing lens, passes through the first segment G


31


, and is focused on the center of the phosphor screen by the main lens. The main lens does not have any astigmatism, and gives the same focusing power to the electron beam in both the horizontal and vertical directions. Thus, the beam spot on the phosphor screen becomes almost circular, as shown in FIG.


15


.




In a deflection state, the first and second Ace segments G


31


and G


32


form the first quadrupole lens between them. The first quadrupole lens gives horizontal divergent action and vertical convergent action to the electron beam. The second segment G


32


, additional electrode Gs, and fourth grid G


4


form a main lens incorporating the second quadrupole lens. Since the application voltage Vf of the second segment G


32


is higher than that in a no-deflection state, the second quadrupole lens decreases






(Vs−Vf)/(Eb−Vf).






In addition, the vertically elongated uncircular electron beam aperture


15


formed in the additional electrode Gs gives horizontal convergent action and vertical divergent action to the electron beam. Since the voltage difference (Eb−Vf) between the second segment G


32


and fourth grid G


4


decreases, the horizontal convergent action and vertical divergent action simultaneously decrease.




A decrease in focusing power caused by a decrease in voltage difference (Eb−vf) between the second segment G


32


and fourth grid G


4


is set to cancel divergent action generated by the first and second segments G


31


and G


32


. This establishes electron beam focusing conditions even at the periphery of the phosphor screen.




For this reason, the difference between the horizontal and vertical magnifications of a beam spot formed at the periphery of the phosphor screen is eliminated. Further, the aberration of the first quadrupole lens formed between the first and second segments G


31


and G


32


and the aberration of the second quadrupole lens formed in the main lens can be reduced. By decreasing the diameter of an electron beam incident on the main lens, the spherical aberration of the main lens can be reduced. This can reduce the elliptic distortion of the beam spot at the periphery of the phosphor screen.




The action of the double quadrupole lens type electron gun assembly will be explained in detail with reference to an optical model like the one shown in FIG.


21


.




As shown in

FIG. 21

, the double quadrupole lens type electron gun assembly has a first quadrupole lens


6




a


in front of a main lens


4


, and forms a second quadrupole lens


6




b


inside the main lens


4


. In this case, letting Mh


2


be the horizontal magnification, Mv


2


be the vertical magnification, α


0


h


2


be the horizontal divergent angle, αih


2


be the horizontal incident angle, α


0


v


2


be the vertical divergent angle, and αiv


2


be the vertical incident angle, the horizontal and vertical magnifications Mh


2


and Mv


2


are given by








Mh




2





0




h




2





ih




2












Mv




2





0




v




2





iv




2


.






Since






α


ih




2





iv




2








the horizontal and vertical magnifications Mh


2


and Mv


2


satisfy








Mh




2


=


Mv




2


.






The difference between the horizontal and vertical magnifications can be eliminated. By forming the second quadrupole lens


6




b


at the center of the main lens


4


, the interval between the first and second quadrupole lenses


6




a


and


6




b


can be set large. Horizontal divergent angles θQ


1


h


2


and θQ


2


h


2


and vertical divergent angles θQ


1


v


2


and θQ


2


v


2


of the first and second quadrupole lenses


6




a


and


6




b


become smaller than those obtained when the first and second quadrupole lenses are arranged in front of the main lens. Hence, the aberrations of the first and second quadrupole lenses


6




a


and


6




b


can be reduced.




By forming the second quadrupole lens


6




b


at the center of the main lens


4


, a diameter Dh


2


of an electron beam incident on the main lens becomes smaller than that obtained when the first and second quadrupole lenses are located in front of the main lens. The spherical aberration of the main lens can therefore be reduced.




This arrangement can eliminate the difference between the horizontal and vertical magnifications caused when the electron beam is deflected to the periphery of a phosphor screen


5


, thereby reducing the aberration of the quadrupole lens and the spherical aberration of the main lens. Thus, the distortion of a beam spot


1


can be reduced on the entire phosphor screen.




A double quadrupole lens type electron gun assembly according to the fourth embodiment will be described.




As shown in

FIG. 23

, an electron gun assembly


22


according to the fourth embodiment has almost the same arrangement as that of the electron gun assembly according to the third embodiment shown in

FIG. 20. A

detailed description of the electron gun assembly


22


will be omitted, and only a different part will be described.




As shown in

FIGS. 17 and 18

, an additional electrode Gs has three or one horizontally elongated uncircular electron beam aperture


15


with a larger diameter in the horizontal direction (X) than in the vertical direction (Y).




As shown in

FIG. 19A

, the additional electrode Gs receives a variable voltage


30


(Vs) prepared by superposing a parabolically changing voltage on a DC voltage of about 16 kV. As shown in

FIGS. 19A and 19B

, this parabolic voltage increases in synchronism with a sawtooth-like deflection current


27


along with an increase in electron beam deflection amount. The parabolic variable voltage


30


has almost the same amplitude as a variable voltage


28


applied to a third grid G


3


like the one shown in FIG.


9


A.




Also with this arrangement, in a no-deflection state, first and second segments G


31


and G


32


have the same potential, and do not form any electron lens between them. The main lens made up of the second segment G


32


, the additional electrode Gs, and a fourth grid G


4


does not have any astigmatism, i.e., any quadrupole lens action. Therefore, an electron beam preliminarily focused by the pre-focusing lens is focused on the center of the phosphor screen by the main lens. The main lens gives the same focusing power to the electron beam in both the horizontal and vertical directions. Thus, the beam spot on the phosphor screen becomes almost circular, as shown in FIG.


22


.




In a deflection state, as the electron beam is deflected to the periphery of the phosphor screen, the application voltage Vf of the third grid G


3


increases. In synchronism with this, as the electron beam is deflected to the periphery of the phosphor screen, the application voltage Vs of the additional electrode Gs also increases. This increases






(Vs−Vf)/(Eb−Vf).






The additional electrode Gs having the horizontally elongated electron beam aperture


15


gives horizontal convergent action and vertical divergent action to the electron beam. Since the voltage difference (Eb−Vf) between the second segment G


32


and fourth grid G


4


decreases, the horizontal convergent action and vertical divergent action to the electron beam simultaneously decrease.




As a result, the fourth embodiment can attain the same effects as those of the third embodiment.




A double quadrupole lens type electron gun assembly according to the fifth embodiment will be described.




As shown in

FIG. 24

, an electron gun assembly


22


according to the fifth embodiment has almost the same arrangement as that of the electron gun assembly according to the third embodiment shown in

FIG. 20. A

detailed description of the electron gun assembly


22


will be omitted, and only a different part will be described.




As shown in

FIG. 24

, the electron gun assembly


22


has a third grid G


3


made up of a first plate-like segment G


31


and second cylindrical segment G


32


. The first segment G


31


is located on a second grid G


2


side, whereas the second segment G


32


is located on an additional electrode Gs side.




As shown in

FIG. 17

, the first segment G


31


has three horizontally elongated uncircular electron beam apertures


15


with a larger diameter in the horizontal direction (X) than in the vertical direction (Y). The second segment G


32


has, on the first segment G


31


side, three vertically elongated uncircular electron beam apertures


15


with a larger diameter in the vertical direction (Y) than in the horizontal direction (X).




As shown in

FIG. 8

, the additional electrode Gs inserted between the second segment G


32


and a fourth grid G


4


has three vertically elongated uncircular electron beam apertures


15


with a larger diameter in the vertical direction (Y) than in the horizontal direction (X).




The first segment G


31


of the third grid G


3


receives a predetermined DC voltage, and the second segment G


32


receives a variable voltage


28


(Vf). The additional electrode Gs receives a predetermined voltage (Vs).




In a no-deflection state, the electron gun assembly


22


having this arrangement can form a pre-focusing lens free from any astigmatism. In a deflection state, the pre-focusing lens can be given a quadrupole lens effective by applying to the second segment G


32


a variable voltage which varies in an increase in electron beam deflection amount.




The fifth embodiment can therefore obtain the same effects as those of the third embodiment.




Industrial Applicability




As described above, the electron gun assembly adopts the double quadrupole lens scheme. In deflection, one quadrupole lens is formed in front of the main lens, and the other is formed inside the main lens. This can constitute a color cathode ray tube apparatus which can reduce the elliptic distortion of a beam spot without enlarging the beam spot, and displays a high-quality image on the entire screen.



Claims
  • 1. A color cathode ray tube apparatus characterized by comprising an electron gun assembly having a main lens which is made up of at least a focusing electrode and anode electrode, and accelerates and focuses an electron beam on a phosphor screen, and a deflection yoke for generating a deflection magnetic field for deflecting the electron beam emitted by said electron gun assembly,wherein said electron gun assembly has at least one additional electrode located along an equipotential plane of a potential distribution formed between the focusing electrode and anode electrode forming the main lens, in a no-deflection state in which the electron beam is focused on a center of the phosphor screen, the additional electrode receives a voltage of a predetermined level corresponding to a potential of the equipotential plane on which the additional electrode is located, and in a deflection state in which the electron beam is deflected to a periphery of the phosphor screen, letting Vf be an application voltage of the focusing electrode, Eb be an application voltage of the anode electrode, and Vs be an application voltage of the additional electrode, a value (Vs−Vf)/(Eb−Vf) changes with an increase in electron beam deflection amount, while the additional electrode forms an electron lens having different horizontal and vertical focusing powers.
  • 2. An apparatus according to claim 1, characterized in that the voltage applied to the focusing electrode dynamically changes with an increase in electron beam deflection amount.
  • 3. An apparatus according to claim 1, characterized in that a vertical focusing power of the main lens becomes weaker than a horizontal focusing power along with an increase in electron beam deflection amount.
  • 4. An apparatus according to claim 1, characterized in that the additional electrode is formed from a plate-like electrode having an uncircular electron beam aperture using a vertical direction as a major axis, and the value(Vs−Vf)/(Eb−Vf) changes in synchronism with a deflection current supplied to said deflection yoke and decreases with an increase in electron beam deflection amount.
  • 5. An apparatus according to claim 1, characterized in that the voltage applied to the additional electrode dynamically changes with an increase in electron beam deflection amount.
  • 6. An apparatus according to claim 1, characterized in that the additional electrode is formed from a plate-like electrode having an uncircular electron beam aperture using a horizontal direction as a major axis, and the value(Vs−Vf)/(Eb−Vf) changes in synchronism with a deflection current supplied to said deflection yoke and increases with an increase in electron beam deflection amount.
  • 7. An apparatus according to claim 1, characterized by further comprising:at least one multipole lens which acts on an electron beam before being incident on the main lens; and voltage application means for applying a voltage so as to dynamically change focusing powers of the main lens and at least one multipole lens in synchronism with a deflection current supplied to said deflection yoke.
  • 8. An apparatus according to claim 7, characterized in that the main lens has a relatively strong horizontal focusing power and relatively weak vertical focusing power along with an increase in electron beam deflection amount, andthe multipole lens has a relatively weak horizontal focusing power and relatively strong vertical focusing power along with an increase in electron beam deflection amount.
  • 9. An apparatus according to claim 7, characterized in that the voltage applied to the focusing electrode dynamically changes with an increase in electron beam deflection amount.
  • 10. An apparatus according to claim 7, characterized in that the additional electrode is formed from a plate-like electrode having an uncircular electron beam aperture using a vertical direction as a major axis, and the value(Vs−Vf)/(Eb−Vf) changes in synchronism with a deflection current supplied to said deflection yoke and decreases with an increase in electron beam deflection amount.
  • 11. An apparatus according to claim 7, characterized in that the voltage applied to the additional electrode dynamically changes with an increase in electron beam deflection amount.
  • 12. An apparatus according to claim 7, characterized in that the additional electrode is formed from a plate-like electrode having an uncircular electron beam aperture using a horizontal direction as a major axis, and the value(Vs−Vf)/(Eb−Vf) changes in synchronism with a deflection current supplied to said deflection yoke and increases with an increase in electron beam deflection amount.
  • 13. An apparatus according to claim 7, characterized in that said electron gun assembly has a pre-focusing lens for preliminarily focusing the electron beam incident on the main lens, and said multipole lens is formed inside the pre-focusing lens.
  • 14. A color cathode ray tube apparatus characterized by comprising an electron gun assembly having a main lens which is made up of at least a focusing electrode and anode electrode, and accelerates and focuses an electron beam on a phosphor screen, and a deflection yoke for generating a deflection magnetic field for deflecting the electron beam emitted by said electron gun assembly,wherein said electron gun assembly has at least one additional electrode located along an equipotential plane of a potential distribution formed between the focusing electrode and anode electrode forming the main lens, in a predetermined deflection state in which the electron beam is deflected, the additional electrode receives a voltage of a predetermined level corresponding to a potential of the equipotential plane on which the additional electrode is located, and in a deflection state in which the electron beam is deflected to a periphery of the phosphor screen, letting Vf be an application voltage of the focusing electrode, Eb be an application voltage of the anode electrode, and Vs be an application voltage of the additional electrode, a value (Vs−Vf)/(Eb−Vf) changes with an increase in electron beam deflection amount, while the additional electrode forms an electron lens having different horizontal and vertical focusing powers.
Priority Claims (3)
Number Date Country Kind
11-016902 Jan 1999 JP
11-032259 Feb 1999 JP
11-326597 Nov 1999 JP
PCT Information
Filing Document Filing Date Country Kind
PCT/JP00/00358 WO 00
Publishing Document Publishing Date Country Kind
WO00/45414 8/3/2000 WO A
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Number Name Date Kind
5113112 Shimoma et al. May 1992 A
5262702 Shimoma et al. Nov 1993 A
5339010 Urata et al. Aug 1994 A
5694004 Kimiya et al. Dec 1997 A
5744917 Kawaharada Apr 1998 A
6031346 Shirai et al. Feb 2000 A
6339293 Kimiya et al. Jan 2001 B1
6225766 Ono et al. May 2001 B1
6236152 Kimiya et al. May 2001 B1
Foreign Referenced Citations (3)
Number Date Country
0 714 115 May 1996 EP
64-38947 Feb 1989 JP
10-92332 Apr 1998 JP