Disclosed are color-tunable tetradentate platinum II emitters and OLEDs containing the tetradentate platinum II emitters.
After their commercial success in display panels, organic light-emitting diodes (OLEDs) are expected to play a critical role in next-generation solid-state illumination and smart lighting, owing to their unique properties, such as flexibility, ultra-thin thickness and light weight. In addition to fixed chromaticity in ordinary illumination devices, there is a great demand for tunable chromaticity in certain applications, such as smart lighting, decoration and botanical grow lamps. Specifically, the voltage-dependent, color-tunable OLED is an appealing tool for the visualization of the electronic output signal of sensors, such as real-time wearable electrocardiogram monitors and electronic skin sensors.
As shown in
As the single emitter is the crucial component of this kind of device, a qualified one should fulfill two criteria; i) have the ability to emit both high-energy and low-energy light at the same time, in order to guarantee a wide color-span range; ii) exhibit high efficiency and short emission lifetime for both high-energy and low-energy emission to achieve high electroluminescent (EL) efficiency at a practical luminance of 1000 cd m−2. Among the literature-reported high-efficiency emitters for OLEDs, platinum(II) complexes can fulfill both criteria, due to their planar molecular structure: i) Pt(II) complexes have a strong propensity toward aggregation via π-π stacking and/or metal-metal interactions that give rise to new triplet metal-metal-to-ligand charge transfer (3MMLCT) emission in the low-energy spectral region, and ii) phosphorescence from Pt(II) emitters in aggregated forms generally features markedly enhanced radiative decay rate constants and much shorter emission lifetimes, compared to monomer emission, owing to the increased metal character in the emissive 3 MMLCT excited state.
The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an extensive overview of the invention. It is intended to neither identify key or critical elements of the invention nor delineate the scope of the invention. Rather, the sole purpose of this summary is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented hereinafter.
A color-tunable OLED having long operational lifetime is described herein. By tuning driving voltage or current, the emitting wavelength of OLEDs can be changed, and further the emitting color or color temperature can be tuned.
Various principles support the subject matter described herein.
Disclosed herein are tetradentate platinum II based emitters having a first emission wavelength when subjected to a first driving voltage and a second wavelength different from the first wavelength when subjected to a second driving voltage different from the first driving voltage.
Also disclosed are organic light-emitting diode, containing a first functional layer and a second functional layer configured to have a voltage driven across the first functional layer and the second functional layer; and an emissive layer between the first functional layer and the second functional layer, the emissive layer comprising a tetradentate platinum II based emitter having a first emission wavelength when subjected to a first driving voltage and a second wavelength different from the first wavelength when subjected to a second driving voltage different from the first driving voltage.
To the accomplishment of the foregoing and related ends, the invention comprises the features hereinafter fully described and particularly pointed out in the claims. The following description and the annexed drawings set forth in detail certain illustrative aspects and implementations of the invention. These are indicative, however, of but a few of the various ways in which the principles of the invention may be employed. Other objects, advantages and novel features of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the drawings.
Provided herein is a stable device structure and stable emitter to fabricate stable color-tunable OLED. Due to the broad spectrum of excimer emission or exciplex emission, this new OLED can achieve high CRI (>90) and emit different type of white colors at certain voltage, which is beneficial to smart OLED lighting. What is more, the stability of device operation is successfully solved with our device structure and stable emitter. The stable color-tunable OLED is a stable voltage-dependent color-tunable OLED, which can even meet the requirement of practical use in wearable smart device or smart lighting or decoration.
Various advantages include long operational device lifetimes with LT50>200,000 hr at 100 cd/m2 (even much longer if the purity of materials is high enough), employing double hosts or double emissive layers to fabricate OLEDs, just utilizing single emitter to solve color-aging problem, and/or utilizing the two emission states of single emitter to emit large-range different color. The subject matter herein provides a simple way to fabricate stable voltage-dependent color-tunable OLED. The operational stability of color-tunable OLED can be leveraged in real-time variable displays for a wearable smart device.
Disclosed herein are a series of efficient phosphorescent Pt(II) emitters supported by tetradentate [O{circumflex over ( )}N{circumflex over ( )}C{circumflex over ( )}N] ligands. High EQEs of up to 26.8% were achieved in OLEDs based on the emission of such Pt(II) complexes. Among them, Pt-X-2, Pt-X-3, and Pt-X-4 (
Considering its relatively simple molecular structure and well-studied concentration-dependent emission, Pt-X-3 was exploited to investigate the influence of device structure on EL performance in color-tunable OLEDs with a single Pt-emitter. As depicted in
To quantitatively address the shift in EL spectrum of both Pt-X-3 based devices, we applied “Gaussian” fitting to estimate the ratio of aggregation emission to monomeric emission. At a low driving voltage of 3 V, the EL spectrum of the device with 12 wt % Pt-X-3 was dominated by the aggregation emission, with an integral area ratio (Aagg/mon) of 11.4:1. With the increase in applied voltage to 11 V, the Aagg/mon declined to 3.66:1. On the other hand, the Aagg/mon in the EL spectrum of the device with 6 wt % Pt-X-3 was 1.64:1 at 3 V and dropped to 0.85:1 at 11 V. As depicted in
Equation 1 was derived for single-layer polymer OLEDs by Meerholz and co-workers, and applied by Wang and co-workers to multilayer OLEDs to account for color-tunable OLEDs. Instead of merely using the intensity ratio of different emission bands, as in previous literature reports, here we used the integral area ratio Aagg/mon to describe the emission ratio q(U) in Equation 1. We employed this methodology because the full width at half maximum (FWHM) of the aggregated emission of Pt-X-3 is greater than that of the monomer emission, which can cause a severe deviation during the simulation if the intensity ratio is used to describe q(U). In Equation 1, D is the diffusion coefficient of the trapped electrons, μ the mobility of the carriers, d the thickness of the EML, LT the average diffusion distance before a carrier reaches a trapping center, U the driving voltage, and U0 the built-in electronic field. Dip is the Einstein relation that describes the ratio between diffusivity and mobility. By using Equation 1 to fit the experimental data from the device with 12 wt % Pt-X-3, the curve fitting matches the experimental data with a correlation coefficient R2 of 0.96, as shown in
Since the ratio of aggregated/monomer states of Pt-X-3 was fixed at a fixed dopant concentration, the color-span would be limited within a relatively narrow spectral range, if a traditional co-host device structure was used. To further widen the color-span range of the Pt-X-3 devices, we designed a novel co-host in double-emissive layer (CHIDEL) device structure by combining two mechanisms that enable color-tunable devices: recombination-zone-shift and trapping-and-energy-transfer. In CHIDEL devices, the single EML in traditional co-host devices is replaced by two consecutive sub-EMLs with the same co-host system, but different dopant concentrations. In our case, the CHIDEL device structure was ITO/HAT-CN (10 nm)/TAPC (40 nm)/TCTA (10 nm)/TCTA: B3PYMPM: Pt-X-3 (x wt %, 10 nm)/TCTA: B3PYMPM: Pt-X-3 (y wt %, 10 nm)/B3PYMPM (10 nm)/TmPyPb (40 nm)/LiF (1.2 nm)/AI (100 nm). A bilayer TCTA: B3PYMPM: Pt-X-3 (x wt %, 10 nm)/TCTA: B3PYMPM: Pt-X-3 (y wt %, 10 nm) was used as the EML while x and y represent the doping concentrations of Pt-X-3 in the two sub-EMLs. Two concentration (x/y) combinations of 6/12 and 12/6 were examined; the normalized EL spectra at different driving voltages are shown in
Despite the wide color-span range of the Pt-X-3 device with the optimized CHIDEL structure, the following weaknesses of Pt-X-3 limited its application: 1) The monomer emission (527 nm) of Pt-X-3 is not blue enough to produce a “true” white light spectral profile when combined with its lower-energy aggregation emission, limiting its application in illumination devices, and 2) The photoluminescence quantum yields (PLQYs; 73.9% and 80.8% at 12 and 6 wt %, respectively; Table 1) of Pt-X-3 in the film of TCTA:B3PYMPM double hosts are not high enough. For this reason, we applied two additional tetradentate Pt(II) complexes Pt-X-2 and Pt-X-4 as single emitter in color-tunable OLEDs with CHIDEL structure, because of the higher energy of monomer emission of the former and the higher PLAY of the latter. The optimized EML structure for Pt-X-2 was TCTA: B3PYMPM: Pt-X-2 (26 wt %, 10 nm)/TCTA: B3PYMPM: Pt-X-2 (8 wt %, 10 nm), while that for Pt-X-4 was TCTA: B3PYMPM: Pt-X-4 (18 wt %, 10 nm)/TCTA: B3PYMPM: Pt-X-4 (8 wt %, 10 nm). Normalized EL spectra of Pt-X-2 and Pt-X-4 devices at various driving voltages are shown in
The EQE-luminance characteristics of the devices with Pt-X-2, Pt-X-3, and Pt-X-4 are depicted in
In addition to PLAY, the EQE value of an OLED is also a function of the out-coupling efficiency, which is strongly influenced by the horizontal transition dipole moment of the EML. A horizontal transition dipole moment has been observed in several OLEDs based on Ir(III) and Pt(II) complexes. Angular distributions of the EL intensities of Pt-X-4 in conventional TCTA: B3PYMPM co-host OLEDs with different dopant concentrations of 8 and 18 wt % were measured, and the results are shown in
A preliminary examination of the operational stability of the OLEDs with Pt-X-4 under laboratory conditions demonstrated the duration to drop to 90% of the initial luminance (LT90) of the Pt-X-4 OLEDs was 13.95 h (see
As described herein, provided is a novel CHIDEL device structure for color-tunable OLEDs based on a single tetradentate Pt(II) emitter by combining recombination-zone-shift and trapping-and-energy-transfer mechanisms. Wide color-span range, high efficiency and low-efficiency roll-off were achieved in the CHIDEL devices based on Pt-X-2, Pt-X-3 and Pt-X-4. The EL distribution and long-term operational stability of Pt-X-4-based devices were also examined. The results show that the aggregation states of Pt-X-4 were horizontally oriented in the EML, and the device lifetime was longer than that of the Pt-X-4 monomers. Owing to the high efficiency and decent stability, simple-structured, color-tunable OLEDs with Pt-X-4 may find applications in wearable biomedical devices, such as real-time electrocardiogram monitors.
Referring to
In one embodiment, a tetradentate platinum II based emitter has a first emission wavelength when subjected to a first driving voltage and a second emission wavelength different from the first emission wavelength when subjected to a second driving voltage different from the first driving voltage. In another embodiment, the tetradentate platinum II based emitter is a Pt[O{circumflex over ( )}N{circumflex over ( )}C{circumflex over ( )}N] complex. In yet another embodiment, the tetradentate platinum II based emitter has a monomer state and an aggregation state. In another embodiment, the second driving voltage can be at least twice the first driving voltage. In another embodiment, the first emission wavelength has a first hue selected from yellow, orange, red, green or blue, and the second emission wavelength has a second hue selected from yellow, orange, red, green or blue, the first hue and the second hue being different.
In one embodiment, an organic light-emitting diode comprises a first functional layer and a second functional layer configured to have a voltage driven across the first functional layer and the second functional layer; and an emissive layer between the first functional layer and the second functional layer, the emissive layer comprising a tetradentate platinum II based emitter having a first emission wavelength when subjected to a first driving voltage and a second wavelength different from the first wavelength when subjected to a second driving voltage different from the first driving voltage. In one embodiment, the doping concentration of the tetradentate platinum II based emitter in the emissive layer is from 1% by weight to 25% by weight, or from 3% by weight to 12% by weight.
The present disclosure describes emitters for use in voltage driven color tunable OLEDs, the OLED devices themselves, and methods of making and using such Pt(II) emitter OLED devices. In one aspect, the OLED devices implement a single emitter as described herein in order to generate light. A single emitter OLED simplifies the device structure and lowers manufacturing costs as compared to multiple-emitter OLEDs or more complicated OLEDs such as those that combine two or more sub-OLEDs. In one or more embodiments described herein, an emitter is provided whose emitting wavelength is variable in response to tuning driving voltage or current to achieve a desirable color or color temperature. As voltage is applied, the OLED produces varying monomer (e.g., 480-530 nm) and excimer (e.g., 600-650 nm) emission to produce light having a wavelength along the visible light spectrum (e.g., about 480 nm to 800 nm). By changing driving voltage or current, the ratio of the emitter's monomer and excimer emissions can be varied to create different colors.
The emitters and OLED devices described herein advantageously provide light emission characteristics that are suitable for typical OLED device application. The OLED devices as described herein include response rates between 1 μs and 1 ms and can function with voltage as low as 2.4V.
It is noted that the emitters described herein do not implement various conventional tactics to tune color. For example, the emitters do not tune color as a result of doping concentration (i.e., varying the concentrations of polar dopant molecules in the emissive layer or in the host material). The OLED devices described herein do not implement P-I-N doped layers as is known in the art. The hole transport layers are not p-doped and the electron transport layers are not n-doped.
Further, to produce certain color, the OLEDs described herein do not implement a multiple OLED arrangement in an array which each OLED is particularly tuned such that the average of the colors produces a desired color. Additionally, the OLEDs herein do not rely upon fluorescent molecules inserted into a phosphorescent complex, certain ligands to fine-tune the color of emission, or ligands to trap carriers. Rather, the voltage-dependent color-tunable nature of the OLEDs obviates such approaches.
The OLED devices described herein also do not necessarily include a carrier blocking layer or hole blocking layer disposed between adjacent emission layers in order to provide color tunable functionality. In one or more embodiments, the OLED devices described herein include a single emissive layer and utilize a co-host mixture in the emissive layer. In one or more embodiments, the OLED devices described herein include an emissive layer that is split into two emissive sub-layers. In a first emissive sub-layer, the emitter and host mixture is chosen to produce monomer emission as the dominant emission. In a second emissive sub-layer, the emitter and host mixture is chosen to produce excimer or aggregation-state emission as the dominant emission.
A color tunable OLED structure can have a single emitter as in one or more embodiments described herein is illustrated as a non-limiting example. The OLED includes a pair of electrodes corresponding to an anode and a cathode that sandwich a plurality of semiconductor layers between the two electrodes that cause electroluminescence when voltage is applied to the OLED. The anode and cathode comprise metallic materials for conducting electricity, such as the following non-limiting examples: aluminum, gold, magnesium, or barium for the cathode, and indium tin oxide (“ITO”) for the anode. The anode and cathode can have any thicknesses, for example, between 100-200 nm. In one or more embodiments, the anode lays further on top of a substrate. The substrate emits the light created by the OLED and is typically made of transparent material. For example, the substrate can be made of glass or a transparent polymer. A hole injection layer (“HIL”) and a hole transport layer (“HTL”) are layered on top of the anode. These layers play a role in the adjustment of electron/hole injection to attain transport balance of charge carriers in the emissive layer of the OLED. In one or more embodiments, the HIL has a thickness, for example, between 1-nm. In one or more embodiments, the HTL has a thickness between 30-80 nm. The materials for the HIL and HTL are selected to maximize OLED efficiency. As some non-limiting examples, the HIL can comprise molybdenum trioxide (“MoO3”) or hexaazatriphenylene-hexacarbonitrile (“HAT-CN”), and the HTL 120 can comprise Tris(4-carbazoyl-9-ylphenyl)amine (“TcTa”), N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (“NPB”) or di-4-tolylaminophenyl cyclohexane (“TAPC”). In one or more embodiments, the HTL includes two complementary sub-layers. For example, a first sub-layer of the HTL can include deposited TAPC or NPD, and a second sub-layer can include deposited TcTa. Exemplary compound structures deposited in HIL and HTL are shown below.
The emissive layer is arranged on top of HTL. In one or more embodiments, the emissive layer has a thickness between 10-30 nm. In one or more embodiments, the emissive layer includes one or more host materials mixed with an emitter formed by the compounds described herein. The host materials may be formed of a single host (i.e., one host mixed with an emitter), or may be formed as a co-host mixture (i.e., two hosts mixed with an emitter). The emitter is added to the host materials as a percentage of total weight. The single emitter emits light when voltage is applied to the emissive layer.
In one or more embodiments, the emissive layer is a single layer structure that implements a co-host mixture (e.g., two host materials and an emitter). In other embodiments, the emissive layer is two separate emissive sub-layers in which an emitter is mixed with one or more hosts in each sub-layer (“double EMLs”). For example, the emissive layer can be a single host double EML, in which a first host is mixed with the emitter in a first emissive sub-layer, and a second host is mixed with the emitter in a second emissive sub-layer. The first host can be the same or different from the second host. In still other embodiments, the emissive layer is a co-host double EML structure in which the first sub-layer includes two host materials mixed with the emitter, and the second sub-layer includes two host materials also mixed with the emitter. The co-host materials in the first and second sub-layers can be the same or different. In still further embodiments, the emissive layer is arranged as a mixed single/co-host double EML. For example, the first sub-layer can include a first host mixed with the emitter, whereas the second sub-layer can include a second host and a third host mixed as co-hosts with the emitter. The first, second and third hosts can be made of the same or different materials.
As some non-limiting examples, the host materials can be TcTa, 1,3-Bis(N-carbazolyl)benzene (“MCP”), 4,6-Bis(3,5-di-3-pyridylphenyl)-2-methylpyrimidine (“B3PymPm”), or 2,6-bis(3-(9H-Carbazol-9-yl)phenyl)pyridine (“26Dczppy”). In a particular embodiment, the emissive layer 125 is a co-host single layer structure that includes TcTa and B3PymPm as co-hosts and a platinum complex emitter (e.g., Pt-X-3 or Pt-X-5) of x % by weight of the hosts, in which x is, for example, between 2% and 30%.
An electron transport layer (“ETL”) and an electron injection layer (“EIL”) are arranged on top of the emissive layer and below the cathode. These layers provide high electron affinity and high electron mobility to the OLED for electrons to flow across the various OLED layers. In one or more embodiments, the ETL has a thickness between 30-80 nm. In one or more embodiments, the EIL has a thickness of 1-5 nm. In one or more embodiments, additional electron transporting materials are added to ETL and EIL to facilitate electron emission. The materials for the ETL and EIL are selected to maximize OLED efficiency. As some non-limiting examples, the ETL can comprise B3PymPm, 1,3,5-Tri(m-pyridin-3-ylphenyl)benzene (“TmPyPb”), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (“TmPPPyTz”), or 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (“TPBi”). As some non-limiting examples, the EIL can comprise LiF, 8-hydroxy-quinolinato lithium (“Liq”), Cs, or CsF.
In one or more embodiments, the emitter used as a dopant in the emissive layer is a metal complex having square planar chemical structure. For example, the metal complex is a platinum complex. Platinum complexes are preferable as they have a rigid ligand scaffold with polydentate chelates to minimize structural distortion upon excitation, have an extended π-conjugation of ligand, have a strong δ-donation (e.g., O{circumflex over ( )}N{circumflex over ( )}C{circumflex over ( )}N with deprotonated C-donor) to ensure strong metal-ligand interaction, and have a high metal-character or charge transfer involvement in the emissive state (i.e., a short emission lifetime for the emitter). In one or more embodiments, the emitter is a compound having a structure form of Pt(O{circumflex over ( )}N{circumflex over ( )}C{circumflex over ( )}N).
In one aspect, the voltage-dependent tunable emitters described herein utilize the different states of single emitter to create light of different colors across the visible light spectrum. The compounds herein produce white light by applying voltage to produce complementary monomer and aggregation-state (e.g., excimer) emission when excited. This balance produces a high photoluminescence quantum yield and has a short emission lifetime (on the order of 100 ns to 10 μs), which lead to a high CRI and produce highly efficient OLED lighting. In one or more embodiments, the devices described herein can additionally utilize double host doping or double emissive layers to increase the color tuning range greatly, increase brightness (>80,000 cd/m2) and suppress efficiency roll-off at high luminance (from 1000 cd/m2 to 5000 cd/m2). Double host doping (or co-host doping) is when a complex dopant is added to a two host mix within a single emissive layer.
Materials: HAT-CN, TAPC, TCTA, B3PYMPM, T2T and TmPyPb were purchased from Luminescence Technology Corp. All of these materials were used as received. Pt-X-2, Pt-X-3 and Pt-X-4 were synthesized as described previously, and purified by gradient sublimation before use.
PLQY measurement Samples of Pt(II) complexes doped in TCTA: B3PYMPM co-host at a suitable ratio were prepared by co-deposition in a Kurt J. Lesker SPECTROS vacuum deposition system with a base pressure of 10−8 mBar. The substrate was a 1 cm×1 cm quartz plate, and the thickness was 100 nm for all samples. The emission spectra and emission quantum efficiency of the thin films were assessed using a Hamamatsu absolute PL quantum yield spectrometer C11347.
Device Fabrication and Characterization: OLEDs were fabricated in a Kurt J. Lesker SPECTROS vacuum deposition system with a base pressure of 10−8 mBar. In the vacuum chamber, organic materials were thermally deposited in sequence at a rate of ≈0.1 nm s−1. The doping process in the emitting layer was realized by co-deposition technology. Afterward, LiF (1.2 nm) and Al (100 nm) were thermally deposited at rates of 0.03 and 0.2 nm s−1, respectively. Film thicknesses were determined in situ using calibrated oscillating quartz crystal sensors.
EL spectra, J-L-V characteristics, CIE coordinates, CRI, EQE, CE and PE were measured using a Keithley 2400 source-meter and an absolute external quantum efficiency measurement system (C9920-12, Hamamatsu Photonics). EL distribution was measured with an angle-dependent device testing system (C9920-11, Hamamatsu Photonics). All devices were characterized at room temperature without encapsulation.
Device lifetime measurement The OLEDs used to evaluate the long-term stability of Pt-X-4 had a device structure of ITO/HAT-CN (5 nm)/NPB (20 nm)/FSFA (15 nm)/DMIC-TRZ: DMIC-CZ: Pt-X-4 (8 wt %)/ANT-BIZ (20 nm)/Liq (1 nm)/Al (100 nm). The chemical structures of NPB, FSFA, DMIC-TRZ, DMIC-CZ, ANT-BIZ, and Liq are depicted in
Exemplary device structures include:
ITO (substrate)/HAT-cn (5 nm)/FSFA (15 nm)/DMIC-Trz: DMIC-Cz: Pt (II) x wt % (15 nm)/ANT-BIZ (20 nm)/Liq (1 nm)/Al(100 nm).
Wherein, x represents 6 wt %˜20 wt %, Pt(II) represents Pt-X-4, Pt-X-3, Pt-X-2-n or other Pt(II) emitters with both monomer and aggregation emissions.
Here, Pt-X-4 is used as emitter fist. The results are as follows: Device structure: ITO/HAT-CN (5 nm)/NPB (20 nm)/FSFA (15 nm)/DMIC-TRZ: DMIC-CZ: Pt-X-4 (8 wt %)/ANT-BIZ (20 nm)/Liq (1 nm)/Al (100 nm).
The key performance of device operational lifetime:
As the display of sensors, these color-tunable devices could function at around 100 cd·m−2. Thereby, we calculate the operational lifetime of Device at 100 cd·m−2. LT90 is as high as 19105 hours and LT50 even beyond 200,000 hours.
Oled Efficiency:
The stable color tunable OLED with single emitter Pt-X-4.
The device structure is:
Device 1: ITO (substrate)/HAT-cn (5 nm)/Pt-301 (160 nm)/FSFA (5 nm)/DMIC-TRZ: DMIC-CZ: Pt-x-4 (15 nm)/ANT-BIZ (20 nm)/Liq (1 nm)/AL (100 nm)
Wherein, HAT-cn is hole-injecting layer, Pt-301 is hole-transporting layer, FSFA is used to transporting hole and/or as electron-blocking layer, ANT-BIZ is electron-transporting layer, Liq is electron-injecting layer, and Al is used as negative electrode. In the emissive layer, DMIC-TRZ and DMIC-CZ are mixed together as hosts with molar ratio of 1:1, and doped with 10 wt % Pt-X-4; here, Pt-X-4 is the single emitter.
Device 2: ITO (substrate)/HAT-cn (5 nm)/Pt-301 (160 nm)/FSFA (5 nm)/DMIC-TRZ: DMIC-CZ: Pt-x-4 4 wt % (EML1, 10 nm)/DMIC-TRZ: DMIC-CZ: Pt-X-4 10 wt % (EML2, 10 nm)/ANT-BIZ (20 nm)/Liq (1 nm)/AL (100 nm) Wherein, HAT-cn is hole-injecting layer, Pt-301 is hole-transporting layer, FSFA is used to transporting hole and/or as electron-blocking layer, ANT-BIZ is electron-transporting layer, Liq is electron-injecting layer, and Al is used as negative electrode. In the emissive layer 1 (EML1), DMIC-TRZ and DMIC-CZ are mixed together as hosts with molar ratio of 1:1, and doped with 4 wt % Pt-X-4; In the emissive layer 2 (EML2), DMIC-TRZ and DMIC-CZ are mixed together as hosts with molar ratio of 1:1, and doped with 10 wt % Pt-X-4; here, Pt-X-4 is the single emitter.
Device 3: ITO (substrate)/HAT-cn (5 nm)/Pt-301 (160 nm)/FSFA (5 nm)/DMIC-TRZ: DMIC-CZ: Pt-X-2-n (15 nm)/ANT-BIZ (20 nm)/Liq (1 nm)/AL (100 nm)
Wherein, HAT-cn is hole-injecting layer, Pt-301 is hole-transporting layer, FSFA is used to transporting hole and/or as electron-blocking layer, ANT-BIZ is electron-transporting layer, Liq is electron-injecting layer, and Al is used as negative electrode. In the emissive layer, DMIC-TRZ and DMIC-CZ are mixed together as hosts with molar ratio of 1:1, and doped with 10 wt % Pt-X-2-n; here, Pt-X-2-n is the single emitter.
The selected device data of Device 1, 2 and 3 are listed as follows:
The chemical structure of Pt-X-2-n and Pt-X-4 are listed below:
Unless otherwise indicated in the examples and elsewhere in the specification and claims, all parts and percentages are by weight, all temperatures are in degrees Centigrade, and pressure is at or near atmospheric pressure.
With respect to any figure or numerical range for a given characteristic, a figure or a parameter from one range may be combined with another figure or a parameter from a different range for the same characteristic to generate a numerical range.
Other than in the operating examples, or where otherwise indicated, all numbers, values and/or expressions referring to quantities of ingredients, reaction conditions, etc., used in the specification and claims are to be understood as modified in all instances by the term “about.”
While the invention is explained in relation to certain embodiments, it is to be understood that various modifications thereof will become apparent to those skilled in the art upon reading the specification. Therefore, it is to be understood that the invention disclosed herein is intended to cover such modifications as fall within the scope of the appended claims.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2021/127397 | 10/29/2021 | WO |
Number | Date | Country | |
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63107530 | Oct 2020 | US |