COMMON-GATE COMMON-SOURCE TRANSCONDUCTANCE STAGE FOR RF DOWNCONVERSION MIXER

Abstract
In an embodiment, a wireless device receiver chain includes a mixer with a common-gate common-source (CGCS) input stage. Differential signals from an off-chip matching network may be input to the CGCS input stage of the mixer, which downconverts the signals to baseband or some intermediate frequency. The input stage includes a pair of NMOS transistors in a common-gate configuration and a pair of PMOS transistors in a common-source configuration. A potential advantage of the CGCS input stage over the existing CGO transconductance stage configuration is that by adding a common-source stage through the PMOS differential-pair, the transconductance gain is decoupled from the high Q matching network.
Description

BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 shows a portion of receive chain in the transceiver of a wireless device.



FIG. 2 is a block diagram of a common-gate only (CGO) input stage of the mixer in the receive chain of FIG. 1.



FIG. 3 shows a portion of a receive chain in a transceiver of a wireless device including a common-gate common-source (CGCS) input stage to the mixer.



FIG. 4 illustrates an exemplary CGCS input stage.



FIG. 5 is a block diagram of the signals input and output from the matching network.


Claims
  • 1. A wireless device receiver comprising: a matching network;a mixer; anda common-gate common-source (CGCS) mixer input stage including an input for receiving differential input signals from the matching network,a current source,a common-source stage including transistors coupled to the input and the current source,a common-gate stage including transistors coupled to the input and the common-source stage, andan output coupled to the mixer.
  • 2. The wireless device receiver of claim 1, wherein the CGCS mixer input stage further comprises a plurality of inductors coupled between the input and a ground terminal.
  • 3. The wireless device receiver of claim 1, wherein the common-gate stage comprises a pair of NMOS transistors.
  • 4. The wireless device receiver of claim 3, wherein each NMOS transistor in the common-gate stage includes a drain coupled to the common-source stage, a gate coupled to one of the differential input signals, and a source coupled to another of the differential input signals.
  • 5. The wireless device receiver of claim 1, wherein the common-source stage comprises a pair of PMOS transistors.
  • 6. The wireless device receiver of claim 5, wherein each PMOS transistor in the common-gate stage includes a drain coupled to the common-gate stage, a gate coupled to one of the differential input signals, and a source coupled to the current source.
  • 7. The wireless device receiver of claim 1, wherein an output current from the output of the CGCS mixer input stage satisfies the equation:
  • 8. A common-gate common-source (CGCS) transconductance stage comprising: a current source;a common-source stage including a first pair of transistors including a first transistor having a source coupled to the current source, a drain, and a gate coupled to a first differential input signal, anda second transistor having a source coupled to the current source, a drain, and a gate coupled to a second differential input signal and the gate of the first transistor;a common-gate stage including a second pair of transistors, said second pair of transistors including a third transistor having a drain coupled to the drain of the first transistor, a gate coupled to the first differential input signal, and a source coupled to the second differential input signal, anda fourth transistor having a drain coupled to the drain of the second transistor, a gate coupled to the second differential input signal and the gate of the third transistor, and a source coupled to the first differential input signal;a first output to a mixer coupled between the drains of the first and third transistors; anda second output to the mixer coupled between the drains of the second and fourth transistors.
  • 9. The CGCS transconductance stage of claim 7, further comprising: a first inductor coupled between the source of the third transistor and a ground terminal; anda second inductor coupled between the source of the fourth transistor and the ground terminal.
  • 10. The CGCS transconductance stage of claim 7, wherein the first and second transistors comprise PMOS transistors.
  • 11. The CGCS transconductance stage of claim 7, wherein the third and fourth transistors comprise NMOS transistors.
Provisional Applications (1)
Number Date Country
60748854 Dec 2005 US