Information
-
Patent Grant
-
6422676
-
Patent Number
6,422,676
-
Date Filed
Tuesday, June 19, 200123 years ago
-
Date Issued
Tuesday, July 23, 200222 years ago
-
Inventors
-
Original Assignees
-
Examiners
- Barlow; John
- Stephens; Juanita
Agents
-
CPC
-
US Classifications
Field of Search
US
- 347 12
- 347 13
- 347 9
- 347 20
- 347 65
- 347 63
-
International Classifications
-
Abstract
A compact thermal ink jet printhead including a printhead substrate, a plurality of side by side columnar arrays of drop generators formed in the printhead substrate, and drive circuits formed in the printhead substrate for energizing each ink drop generator. The printhead substrate has an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
Description
BACKGROUND OF THE INVENTION
The subject invention generally relates to ink jet printing, and more particularly to a thin film ink jet printhead having a high nozzle packing density.
The art of ink jet printing is relatively well developed. Commercial products such as computer printers, graphics plotters, and facsimile machines have been implemented with ink jet technology for producing printed media. The contributions of Hewlett-Packard Company to ink jet technology are described, for example, in various articles in the
Hewlett-Packard Journal,
Vol. 36, No. 5 (May 1985); Vol. 39, No. 5 (October 1988); Vol. 43, No. 4 (August 1992); Vol. 43, No. 6 (December 1992); and Vol. 45, No. 1 (February 1994); all incorporated herein by reference.
Generally, an ink jet image is formed pursuant to precise placement on a print medium of ink drops emitted by an ink drop generating device known as an ink jet printhead. Typically, an ink jet printhead is supported on a movable print carriage that traverses over the surface of the print medium and is controlled to eject drops of ink at appropriate times pursuant to command of a microcomputer or other controller, wherein the timing of the application of the ink drops is intended to correspond to a pattern of pixels of the image being printed.
A typical Hewlett-Packard ink jet printhead includes an array of precisely formed nozzles in an orifice plate that is attached to an ink barrier layer which in turn is attached to a thin film substructure that implements ink firing heater resistors and apparatus for enabling the resistors. The ink barrier layer defines ink channels including ink chambers disposed over associated ink firing resistors, and the nozzles in the orifice plate are aligned with associated ink chambers. Ink drop generator regions are formed by the ink chambers and portions of the thin film substructure and the orifice plate that are adjacent the ink chambers.
The thin film substructure is typically comprised of a substrate such as silicon on which are formed various thin film layers that form thin film ink firing resistors, apparatus for enabling the resistors, and also interconnections to bonding pads that are provided for external electrical connections to the printhead. The ink barrier layer is typically a polymer material that is laminated as a dry film to the thin film substructure, and is designed to be photodefinable and both UV and thermally curable. In an ink jet printhead of a slot feed design, ink is fed from one or more ink reservoirs to the various ink chambers through one or more ink feed slots formed in the substrate.
An example of the physical arrangement of the orifice plate, ink barrier layer, and thin film substructure is illustrated at page 44 of the
Hewlett-Packard Journal
of February 1994, cited above. Further examples of ink jet printheads are set forth in commonly assigned U.S. Pat. Nos. 4,719,477 and 5,317,346, both of which are incorporated herein by reference.
Considerations with thin film ink jet printheads include increased substrate size and/or substrate fragility as more ink drop generators and/or ink feed slots are employed. There is accordingly a need for an ink jet printhead that is compact and has a large number of ink drop generators.
BRIEF DESCRIPTION OF THE DRAWINGS
The advantages and features of the disclosed invention will readily be appreciated by persons skilled in the art from the following detailed description when read in conjunction with the drawing wherein:
The advantages and features of the disclosed invention will readily be appreciated by persons skilled in the art from the following detailed description when read in conjunction with the drawing wherein:
FIG. 1
is an unscaled schematic top plan view illustration of the layout of ink drop generators and primitive select of an ink jet printhead that employs the invention.
FIG. 2
is an unscaled schematic top plan view illustration of the layout of ink drop generators and ground busses of the ink jet printhead of FIG.
1
.
FIG. 3
is a schematic, partially broken away perspective view of the ink jet printhead of FIG.
1
.
FIG. 4
is an unscaled schematic partial top plan illustration of the ink jet printhead of FIG.
1
.
FIG. 5
is a schematic depiction of generalized layers of the thin film substructure of the printhead of FIG.
1
.
FIG. 6
is a partial top plan view generally illustrating the layout of a representative FET drive circuit array and a ground bus of the printhead of FIG.
1
.
FIG. 7
is an electrical circuit schematic depicting the electrical connections of a heater resistor and an FET drive circuit of the printhead of FIG.
1
.
FIG. 8
is a schematic plan view of representative primitive select traces of the printhead of FIG.
1
.
FIG. 9
is a schematic plan view of an illustrative implementation of an FET drive circuit and a ground bus of the printhead of FIG.
1
.
FIG. 10
is a schematic elevational cross sectional view of the FET drive circuit of FIG.
9
.
FIG. 11
is an unscaled schematic perspective view of a printer in which the printhead of the invention can be employed.
DETAILED DESCRIPTION OF THE DISCLOSURE
In the following detailed description and in the several figures of the drawing, like elements are identified with like reference numerals.
In the following detailed description and in the several figures of the drawing, like elements are identified with like reference numerals.
Referring now to
FIGS. 1-4
, schematically illustrated therein are unscaled schematic plan views and perspective views of an ink jet printhead
100
in which the invention can be employed and which generally includes (a) a thin film substructure or die
11
comprising a substrate such as silicon and having various thin film layers formed thereon, (b) an ink barrier layer
12
disposed on the thin film substructure
11
, and (c) an orifice or nozzle plate
13
laminarly attached to the top of the ink barrier
12
.
The thin film substructure
11
comprises an integrated circuit die that is formed for example pursuant to conventional integrated circuit techniques, and as schematically depicted in
FIG. 5
generally includes a silicon substrate
111
a,
an FET gate and dielectric layer
111
b,
a resistor layer
111
c,
and a first metallization layer
111
d.
Active devices such as drive FET circuits described more particularly herein are formed in the top portion of the silicon substrate
111
a
and the FET gate and dielectric layer
111
b,
which includes a gate oxide layer, polysilicon gates, and a dielectric layer adjacent the resistor layer
111
c.
Thin film heater resistors
56
are formed by the respective patterning of the resistor layer
111
c
and the first metallization layer
111
d.
The thin film substructure further includes a composite passivation layer
111
e
comprising for example a silicon nitride layer and a silicon carbide layer, and a tantalum mechanical passivation layer
111
f
that overlies at least the heater resistors
56
. A gold conductive layer
111
g
overlies the tantalum layer
111
f.
The ink barrier layer
12
is formed of a dry film that is heat and pressure laminated to the thin film substructure
11
and photodefined to form therein ink chambers
19
disposed over heater resistors
56
and ink channels
29
. Gold bonding pads
74
engagable for external electrical connections are formed in the gold layer at longitudinally spaced apart, opposite ends of the thin film substructure
11
and are not covered by the ink barrier layer
12
. By way of illustrative example, the barrier layer material comprises an acrylate based photopolymer dry film such as the “Parad” brand photopolymer dry film obtainable from E. I. duPont de Nemours and Company of Wilmington, Del. Similar dry films include other duPont products such as the “Riston” brand dry film and dry films made by other chemical providers. The orifice plate
13
comprises, for example, a planar substrate comprised of a polymer material and in which the orifices are formed by laser ablation, for example as disclosed in commonly assigned U.S. Pat. No. 5,469,199, incorporated herein by reference. The orifice plate can also comprise a plated metal such as nickel.
As depicted in
FIG. 3
, the ink chambers
19
in the ink barrier layer
12
are more particularly disposed over respective ink firing heater resistors
56
, and each ink chamber
19
is defined by interconnected edges or walls of a chamber opening formed in the barrier layer
12
. The ink channels
29
are defined by further openings formed in the barrier layer
12
, and are integrally joined to respective ink firing chambers
19
. The ink channels
29
open towards a feed edge of an adjacent ink feed slot
71
and receive ink from such ink feed slot.
The orifice plate
13
includes orifices or nozzles
21
disposed over respective ink chambers
19
, such that each ink firing heater resistor
56
, an associated ink chamber
19
, and an associated orifice
21
are aligned and form an ink drop generator
40
. Each of the heater resistors has a nominal resistance of at least 100 ohms, for example about 120 or 130 ohms, and can comprise a segmented resistor as shown in
FIG. 9
, wherein a heater resistor
56
is comprised of two resistor regions
56
a,
56
b
connected by a metallization region
59
. This resistor structure provides for a resistance that is greater than a single resistor region of the same area.
While the disclosed printheads are described as having a barrier layer and a separate orifice plate, it should be appreciated that the printheads can be implemented with an integral barrier/orifice structure that can be made, for example, using a single photopolymer layer that is exposed with a multiple exposure process and then developed.
The ink drop generators
40
are arranged in columnar arrays or groups
61
that extend along a reference axis L and are spaced apart from each other laterally or transversely relative to the reference axis L. The heater resistors
56
of each ink drop generator group are generally aligned with the reference axis L and have a predetermined center to center spacing or nozzle pitch P along the reference axis L. The nozzle pitch P can be {fraction (1/600)} inch or greater, such as {fraction (1/300)} inch. Each columnar array
61
of ink drop generators includes for example 100 or more ink drop generators (i.e., at least 100 ink drop generators).
By way of illustrative example, the thin film substructure
11
can be rectangular, wherein opposite edges
51
,
52
thereof are longitudinal edges of a length dimension LS while longitudinally spaced apart, opposite edges
53
,
54
are of a width or lateral dimension WS that is less than the length LS of the thin film substructure
11
. The longitudinal extent of the thin film substructure
11
is along the edges
51
,
52
which can be parallel to the reference axis L. In use, the reference axis L can be aligned with what is generally referred to as the media advance axis. For convenience, the longitudinally separated ends of the thin film substructure will also be referred to by the reference number
53
,
54
used to refer to the edges at such ends.
While the ink drop generators
40
of each columnar array
61
of ink drop generators are illustrated as being substantially collinear, it should be appreciated that some of the ink drop generators
40
of an array of ink drop generators can be slightly off the center line of the column, for example to compensate for firing delays.
Insofar as each of the ink drop generators
40
includes a heater resistor
56
, the heater resistors are accordingly arranged in columnar groups or arrays that correspond to the columnar arrays of ink drop generators. For convenience, the heater resistor arrays or groups will be referred to by the same reference number
61
.
The thin film substructure
11
of the printhead
100
of
FIGS. 1-4
more particularly includes two ink feed slots
71
that are aligned with the reference axis L, and are spaced apart from each other transversely relative to the reference axis L. The ink feed slots
71
respectively feed four columns
61
of ink drop generators respectively located on opposite sides of the two ink feed slots
71
, wherein the ink channels open towards an edge formed by an associated ink feed slot in the thin film substructure. In this manner, opposite edges of each ink feed slot forms a feed edge and each of the two ink feed slots comprises a dual edge ink feeding slot. By way of specific implementation, the printhead
100
of
FIGS. 1-4
is a monochrome printhead wherein both ink feed slots
71
provides ink of the same color such as black, such that all four columns
61
of ink drop generators produce ink drops of the same color.
The column pitch or spacing CP between columns on either side of an ink feed slot is less than or equal to 630 micrometers (μm) (i.e., at most 630 μm), and the column pitch or spacing CP′ between the columns that are inboard of the ink feed slots is less than or equal to 800 μm (i.e., at most 800 μm).
The nozzle pitch, the stagger or offset of the nozzles from one column to an adjacent column, along the reference axis L, and the ink drop volume are more particularly configured to enable a single pass, monochrome dot spacing along the reference axis L that is ¼th of the nozzle pitch P which is in the range of {fraction (1/300)} inch to {fraction (1/600)} inch. The drop volume can be in the range of 3 to 7 picoliters for dye based inks (as a specific example about 5 picoliters), and in the range of 12 to 19 picoliters of pigment based inks (as a specific example about 16 picoliters). For a nozzle pitch of {fraction (1/300)} inch the stagger or offset along the reference axis L between adjacent columns of nozzles in a given transverse direction can be {fraction (1/1200)} inch. In other words, the second column from the left is offset by {fraction (1/1200)} inch along a selected direction along the reference axis L relative to the leftmost column. The third column from the left is offset by {fraction (1/1200)} inch along the selected direction along the reference axis relative to the second column from the left. The fourth column from the left is offset by {fraction (1/1200)} inch along the selected direction along the reference axis L relative to the third column from the left.
Thus, a nozzle pitch P of {fraction (1/300)} inch would provide for a single pass dot spacing of {fraction (1/1200)} inch which corresponds to a single pass print resolution of 1200 dpi. A nozzle pitch P of {fraction (1/600)} inch would provide for a single pass dot spacing of {fraction (1/2400)} which corresponds to a single pass print resolution of {fraction (1/2400)} dpi.
More particularly for an implementation having four columnar arrays
61
each having at least 100 (e.g., 104) ink drop generators having a nozzle pitch P of {fraction (1/300)} inch, by way of illustrative example, the length LS of the thin film substructure
11
can be about 11.65 millimeters, and the width WS of the thin film substructure can be about 3.29 millimeters or less, such as in the range of about 2.95 millimeters to about 3.29 millimeters. Generally, the length/width aspect ratio (i.e., LS/WS) of the thin film substructure can be greater than 3.5.
In specific implementations having 100 to 104 ink drop generators per column, the printhead has a nozzle packing density in the range of 10.43 nozzles/mm
2
to 12.10 nozzles/mm
2
. More generally, the printhead has a nozzle packing density of at least 10.43 nozzles/mm
2
.
The ink drop generators are each capable of being driven at a maximum frequency in the range of about 15 kHz to about 18 kHz by drive circuitry. For example, respectively adjacent and associated with the columnar arrays
61
of ink drop generators
40
are columnar FET drive circuit arrays
81
formed in the thin film substructure
11
of the printhead
100
, as schematically depicted in
FIG. 6
for a representative columnar array
61
of ink drop generators. Each FET drive circuit array
81
includes a plurality of FET drive circuits
85
having drain electrodes respectively connected to respective heater resistors
56
by heater resistor leads
57
a.
Associated with each FET drive circuit array
81
and the associated array of ink drop generators is a columnar ground bus
181
to which the source electrodes of all of the FET drive circuits
85
of the associated FET drive circuit array
81
are electrically connected. Each columnar array
81
of FET drive circuits and the associated ground bus
181
extend longitudinally along the associated columnar array
61
of ink drop generators, and are at least longitudinally co-extensive with the associated columnar array
61
. Each ground bus
181
is electrically connected to at least one bond pad
74
at one end of the printhead structure and to at least one bond pad
74
at the other end of the printhead structure as schematically depicted in
FIGS. 1 and 2
.
The ground busses
181
and heater resistor leads
57
a
are formed in the metallization layer
111
c
(
FIG. 5
) of the thin film substructure
11
, as are the heater resistor leads
57
b,
and the drain and source electrodes of the FET drive circuits
85
described further herein.
The FET drive circuits
85
of each columnar array of FET drive circuits are controlled by an associated columnar array
31
of decoder logic circuits
35
that decode address information on an adjacent address bus
33
that is connected to appropriate bond pads
74
(FIG.
6
). The address information identifies the ink drop generators that are to be energized with ink firing energy, as discussed further herein, and is utilized by the decoder logic circuits
35
to turn on the FET drive circuit of an addressed or selected ink drop generator.
As schematically depicted in
FIG. 7
, one terminal of each heater resistor
56
is connected via a primitive select trace to a bond pad
74
that receives an ink firing primitive select signal PS. In this manner, since the other terminal of each heater resistor
56
is connected to the drain terminal of an associated FET drive circuit
85
, ink firing energy PS is provided to the heater resistor
56
if the associated FET drive circuit is ON as controlled by the associated decoder logic circuit
35
.
As schematically depicted in
FIG. 8
for a representative columnar array
61
of ink drop generators, the ink drop generators of a columnar array
61
of ink drop generators can be organized into four primitive groups
61
a,
61
b,
61
c,
61
d
of contiguously adjacent ink drop generators, and the heater resistors
56
of a particular primitive group are electrically connected to the same one of four primitive select traces
86
a,
86
b,
86
c,
86
d,
such that the ink drop generators of a particular primitive group are switchably coupled in parallel to the same ink firing primitive select signal PS. For the specific example wherein the number N of ink drop generators in a columnar array is an integral multiple of 4, each primitive group includes N/4 ink drop generators. For reference, the primitive groups
61
a,
61
b,
61
c,
61
d
are arranged in sequence from the lateral edge
53
toward the lateral edge
54
.
FIG. 8
more particularly sets forth a schematic top plan view of primitive select traces
86
a,
86
b,
86
c,
86
d
for an associated columnar array
61
of drop generators and an associated columnar array
81
of FET drive circuits
85
(
FIG. 6
) as implemented for example by traces in the gold metallization layer
111
g
(
FIG. 5
) that is above and dielectrically separated from the associated array
81
of FET drive circuit and ground bus
181
. The primitive select traces
86
a,
86
b,
86
c,
86
d
are respectively electrically connected to the four primitive groups
61
a,
61
b,
61
c,
61
d
by resistor leads
57
b
(
FIG. 8
) formed in the metallization layer
111
c
and interconnecting vias
58
(
FIG. 8
) that extend between the primitive select traces and the resistor leads
57
b.
The first primitive select trace
86
a
extends longitudinally along the first primitive group
61
a
and overlies a portion of heater resistor leads
57
b
(
FIG. 9
) that are respectively connected to heater resistors
56
of the first primitive group
61
a,
and is connected by vias
58
(
FIG. 9
) to such heater resistor leads
57
b.
The second primitive select trace
86
b
includes a section that extends along the second primitive group
61
b
and overlies a portion of heater resistor leads
57
b
(
FIG. 9
) that are respectively connected to heater resistors
56
of the second primitive group
61
b,
and is connected by vias
58
to such heater resistor leads
57
b.
The second trace
86
b
includes a further section that extends along the first primitive select trace
86
a
on the side of the first primitive select trace
86
a
that is opposite the heater resistors
56
of the first primitive group
61
a.
The second primitive select trace
86
b
is generally L-shaped wherein the second section is narrower than the first section so as to bypass the first primitive select trace
86
a
which is narrower than the wider section of the second primitive select trace
86
b.
The first and second primitive select traces
86
a,
86
b
are generally at least coextensive longitudinally with the first and second primitive groups
61
a,
61
b,
and are respectively appropriately connected to respective bond pads
74
disposed at the lateral edge
53
which is closest to the first and second primitive select traces
86
a,
86
b.
The fourth primitive select trace
86
d
extends longitudinally along the fourth primitive group
61
d
and overlies a portion of heater resistor leads
57
b
(
FIG. 9
) that are connected to heater resistors
56
of the fourth primitive group
61
d,
and is connected by vias
58
to such heater resistor leads
57
b.
The third primitive select trace
86
c
includes a section that extends along the third primitive group
61
c
and overlies a portion of heater resistor leads
57
b
(
FIG. 9
) that are connected to heater resistors
56
of the third primitive group
61
c,
and is connected by vias
58
to such heater resistor leads
57
b.
The third primitive select trace
86
c
includes a further section that extends along the fourth primitive select trace
86
d.
The third primitive select trace
86
c
is generally L-shaped wherein the second section is narrower than the first section so as to bypass the fourth primitive select trace
86
d
which is narrower than the wider section of the third primitive select trace
86
c.
The third and fourth primitive select traces
86
c,
86
d
are generally at least coextensive longitudinally with the third and fourth primitive groups
61
c,
61
d,
and are respectively appropriately connected to respective bond pads
74
disposed at the lateral edge
54
that is closest to the third and fourth primitive select traces
86
c,
86
d.
By way of specific example, the primitive select traces
86
a,
86
b,
86
c,
86
d
for a columnar array
61
of ink drop generators overlie the FET drive circuits and the ground bus associated with the columnar array of ink drop generators, and are contained in a region that is longitudinally coextensive with the associated columnar array
61
. In this manner, four primitive select traces for the four primitives of a columnar array
61
of ink drop generators extend along the array toward the ends of the printhead substrate. More particularly, a first pair of primitive select traces for a first pair of primitive groups
61
a,
61
b
disposed in one-half of the length of the printhead substrate are contained in a region that extends along such first pair of primitive groups, while a second pair of primitive select traces for a second pair of primitive groups
61
c,
61
d
disposed in the other half of the length of the printhead substrate are contained in a region that extends along such second pair of primitive groups.
For ease of reference, the primitive select traces
86
and the associated ground bus that electrically connect the heater resistors
56
and associated FET drive circuits
85
to bond pads
74
are collectively referred to as power traces. Also for ease of reference, the primitive select traces
86
can be referred to as to the high side or non-grounded power traces.
Generally, the parasitic resistance (or on-resistance) of each of the FET drive circuits
85
is configured to compensate for the variation in the parasitic resistance presented to the different FET drive circuits
85
by the parasitic path formed by the power traces, so as to reduce the variation in the energy provided to the heater resistors. In particular, the power traces form a parasitic path that presents a parasitic resistance to the FET circuits that varies with location on the path, and the parasitic resistance of each of the FET drive circuits
85
is selected so that the combination of the parasitic resistance of each FET drive circuit
85
and the parasitic resistance of the power traces as presented to the FET drive circuit varies only slightly from one ink drop generator to another. Insofar as the heater resistors
56
are all of substantially the same resistance, the parasitic resistance of each FET drive circuit
85
is thus configured to compensate for the variation of the parasitic resistance of the associated power traces as presented to the different FET drive circuits
85
. In this manner, to the extent that substantially equal energies are provided to the bond pads connected to the power traces, substantially equal energies can be provided to the different heater resistors
56
.
Referring more particularly to
FIGS. 9 and 10
, each of the FET drive circuits
85
comprises a plurality of electrically interconnected drain electrode fingers
87
disposed over drain region fingers
89
formed in the silicon substrate
111
a
(FIG.
5
), and a plurality of electrically interconnected source electrode fingers
97
interdigitated or interleaved with the drain electrodes
87
and disposed over source region fingers
99
formed in the silicon substrate
111
a.
Polysilicon gate fingers
91
that are interconnected at respective ends are disposed on a thin gate oxide layer
93
formed on the silicon substrate
111
a.
A phosphosilicate glass layer
95
separates the drain electrodes
87
and the source electrodes
97
from the silicon substrate
111
a.
A plurality of conductive drain contacts
88
electrically connect the drain electrodes
87
to the drain regions
89
, while a plurality of conductive source contacts
98
electrically connect the source electrodes
97
to the source regions
99
.
The area occupied by each FET drive circuit is preferably small, and the on-resistance of each FET drive circuit is preferably low, for example less than or equal to 14 or 16 ohms (i.e., at most 14 or 16 ohms), which requires efficient FET drive circuits. For example, the on-resistance Ron can be related to FET drive circuit area A as follows:
Ron
<(250,000 ohms·micrometers
2
)/
A
wherein the area A is in micrometers
2
(um
2
). This can be accomplished for example with a gate oxide layer
93
having a thickness that is less than or equal to 800 Angstroms (i.e., at most 800 Angstroms), or a gate length that is less than 4 μm. Also, having a heater resistor resistance of at least 100 ohms allows the FET circuits to be made smaller than if the heater resistors had a lower resistance, since with a greater heater resistor value a greater FET turn-on resistance can be tolerated from a consideration of distribution of energy between parasitics and the heater resistors.
As a particular example, the drain electrodes
87
, drain regions
89
, source electrodes
97
, source regions
99
, and the polysilicon gate fingers
91
can extend substantially orthogonally or transversely to the reference axis L and to the longitudinal extent of the ground busses
181
. Also, for each FET circuit
85
, the extent of the drain regions
89
and the source regions
99
transversely to the reference axis L is the same as extent of the gate fingers transversely to the reference axis L, as shown in
FIG. 6
, which defines the extent of the active regions transversely to the reference axis L. For ease of reference, the extent of the drain electrode fingers
87
, drain region fingers
89
, source electrode fingers
97
, source region fingers
99
, and polysilicon gate fingers
91
can be referred to as the longitudinal extent of such elements insofar as such elements are long and narrow in a strip-like or finger-like manner.
By way of illustrative example, the on-resistance of each of the FET circuits
85
is individually configured by controlling the longitudinal extent or length of a continuously non-contacted segment of the drain region fingers, wherein a continuously non-contacted segment is devoid of electrical contacts
88
. For example, the continuously non-contacted segments of the drain region fingers can begin at the ends of the drain regions
89
that are furthest from the heater resistor
56
. The on-resistance of a particular FET circuit
85
increases with increasing length of the continuously non-contacted drain region finger segment, and such length is selected to determine the on-resistance of a particular FET circuit.
As another example, the on-resistance of each FET circuit
85
can be configured by selecting the size of the FET circuit. For example, the extent of an FET circuit transversely to the reference axis L can be selected to define the on-resistance.
For a typical implementation wherein the power traces for a particular FET circuit
85
are routed by reasonably direct paths to bond pads
74
on the closest of the longitudinally separated ends of the printhead structure, parasitic resistance increases with distance from the closest end of the printhead, and the on-resistance of the FET drive circuits
85
is decreased (making an FET circuit more efficient) with distance from such closest end, so as to offset the increase in power trace parasitic resistance. As a specific example, as to continuously non-contacted drain finger segments of the respective FET drive circuits
85
that start at the ends of the drain region fingers that are furthest from the heater resistors
56
, the lengths of such segments are decreased with distance from the closest one of the longitudinally separated ends of the printhead structure.
Each ground bus
181
is formed of the same thin film metallization layer as the drain electrodes
87
and the source electrodes
97
of the FET circuits
85
, and the active areas of each of the FET circuits comprised of the source and drain regions
89
,
99
and the polysilicon gates
91
advantageously extend beneath an associated ground bus
181
. This allows the ground bus and FET circuit arrays to occupy narrower regions which in turn allows for a narrower, and thus less costly, thin film substructure.
Also, in an implementation wherein the continuously non-contacted segments of the drain region fingers start at the ends of the drain region fingers that are furthest from the heater resistors
56
, the extent of each ground bus
181
transversely or laterally to the reference axis L and toward the associated heater resistors
56
can be increased as the length of the continuously non-contacted drain finger sections is increased, since the drain electrodes do not need to extend over such continuously non-contacted drain finger sections. In other words, the width W of a ground bus
181
can be increased by increasing the amount by which the ground bus overlies the active regions of the FET drive circuits
85
, depending upon the length of the continuously non-contacted drain region segments. This is achieved without increasing the width of the region occupied by a ground bus
181
and its associated FET drive circuit array
81
since the increase is achieved by increasing the amount of overlap between the ground bus and the active regions of the FET drive circuits
85
. Effectively, at any particular FET circuit
85
, the ground bus can overlap the active region transversely to the reference axis L by substantially the length of the non-contacted segments of the drain regions.
For the specific example wherein the continuously non-contacted drain region segments start at the ends of the drain region fingers that are furthest from the heater resistors
56
and wherein the lengths of such continuously non-contacted drain region segments decrease with distance from the closest end of the printhead structure, the modulation or variation of the width W of a ground bus
181
with the variation of the length of the continuously non-contacted drain region segments provides for a ground bus having a width W
181
that increases with proximity to the closest end of the printhead structure, as depicted in FIG.
8
. Since the amount of shared currents increases with proximity to the bonds pads
74
, such shape advantageously provides for decreased ground bus resistance with proximity to the bond pads
74
.
Ground bus resistance can also be reduced by laterally extending portions of the ground bus
181
into longitudinally spaced apart areas between the decoder logic circuits
35
. For example, such portions can extend laterally beyond the active regions by the width of the region in which the decoder logic circuits
35
are formed.
The following circuitry portions associated with a columnar array of ink drop generators can be contained in respective regions having the following widths that are indicated in
FIGS. 6 and 8
by the reference designations that follow the width values.
|
REGIONS THAT CONTAIN:
WIDTH
|
|
Resistor leads 57
About 95 micrometers (μm)
|
or less (W57)
|
FET circuits 81
At most 250 μm, or at most
|
180 μm, for example (W81)
|
Decode logic circuits 31
About 34 μm or less (W31)
|
Primitive select traces 86
About 290 μm or less (W86)
|
|
These widths are measured orthogonally or laterally to the longitudinal extent of the printhead substrate which is aligned with the reference axis L.
Referring now to
FIG. 11
, set forth therein is a schematic perspective view of an example of an ink jet printing device
20
in which the above described printheads can be employed. The ink jet printing device
20
of
FIG. 11
includes a chassis
122
surrounded by a housing or enclosure
124
, typically of a molded plastic material. The chassis
122
is formed for example of sheet metal and includes a vertical panel
122
a.
Sheets of print media are individually fed through a print zone
125
by an adaptive print media handling system
126
that includes a feed tray
128
for storing print media before printing. The print media may be any type of suitable printable sheet material such as paper, card-stock, transparencies, Mylar, and the like, but for convenience the illustrated embodiments described as using paper as the print medium. A series of conventional motor-driven rollers including a drive roller
129
driven by a stepper motor may be used to move print media from the feed tray
128
into the print zone
125
. After printing, the drive roller
129
drives the printed sheet onto a pair of retractable output drying wing members
130
which are shown extended to receive a printed sheet. The wing members
130
hold the newly printed sheet for a short time above any previously printed sheets still drying in an output tray
132
before pivotally retracting to the sides, as shown by curved arrows
133
, to drop the newly printed sheet into the output tray
132
. The print media handling system may include a series of adjustment mechanisms for accommodating different sizes of print media, including letter, legal, A-4, envelopes, etc., such as a sliding length adjustment arm
134
and an envelope feed slot
135
.
The printer of
FIG. 11
further includes a printer controller
136
, schematically illustrated as a microprocessor, disposed on a printed circuit board
139
supported on the rear side of the chassis vertical panel
122
a.
The printer controller
136
receives instructions from a host device such as a personal computer (not shown) and controls the operation of the printer including advance of print media through the print zone
125
, movement of a print carriage
140
, and application of signals to the ink drop generators
40
.
A print carriage slider rod
138
having a longitudinal axis parallel to a carriage scan axis is supported by the chassis
122
to sizeably support a print carriage
140
for reciprocating translational movement or scanning along the carriage scan axis. The print carriage
140
supports first and second removable ink jet printhead cartridges
150
,
152
(each of which is sometimes called a “pen,” “print cartridge,” or “cartridge”). The print cartridges
150
,
152
include respective printheads
154
,
156
that respectively have generally downwardly facing nozzles for ejecting ink generally downwardly onto a portion of the print media that is in the print zone
125
. The print cartridges
150
,
152
are more particularly clamped in the print carriage
140
by a latch mechanism that includes clamping levers, latch members or lids
170
,
172
.
For reference, print media is advanced through the print zone
125
along a media axis which is parallel to the tangent to the portion of the print media that is beneath and traversed by the nozzles of the cartridges
150
,
152
. If the media axis and the carriage axis are located on the same plane, as shown in
FIG. 9
, they would be perpendicular to each other.
An anti-rotation mechanism on the back of the print carriage engages a horizontally disposed anti-pivot bar
185
that is formed integrally with the vertical panel
122
a
of the chassis
122
, for example, to prevent forward pivoting of the print carriage
140
about the slider rod
138
.
By way of illustrative example, the print cartridge
150
is a monochrome printing cartridge while the print cartridge
152
is a tri-color printing cartridge.
The print carriage
140
is driven along the slider rod
138
by an endless belt
158
which can be driven in a conventional manner, and a linear encoder strip
159
is utilized to detect position of the print carriage
140
along the carriage scan axis, for example in accordance with conventional techniques.
Although the foregoing has been a description and illustration of specific embodiments of the invention, various modifications and changes thereto can be made by persons skilled in the art without departing from the scope and spirit of the invention as defined by the following claims.
Although the foregoing has been a description and illustration of specific embodiments of the invention, various modifications and changes thereto can be made by persons skilled in the art without departing from the scope and spirit of the invention as defined by the following claims.
Claims
- 1. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; said plurality of side by side columnar arrays of drop generators comprising four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; drive circuits formed in said printhead substrate for energizing each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
- 2. The printhead of claim 1 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
- 3. The printhead of claim 2 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
- 4. The printhead of claim 3 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
- 5. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; drive circuits formed in said printhead substrate for energizing each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; said drive circuits comprising columnar arrays of FET drive circuits formed in said printhead substrate respectively adjacent said columnar arrays of drop generators, and ground busses that overlap active regions of said FET drive circuits; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
- 6. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance that is less than (250,000 ohm·micrometers2)/A, wherein A is an area of such FET drive circuit in micrometers2.
- 7. The printhead of claim 6 wherein each of said FET drive circuits has a gate oxide thickness that is at most 800 Angstroms.
- 8. The printhead of claim 6 wherein each of said FET drive circuits has a gate length that is less than 4 micrometers.
- 9. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance of at most 14 ohms.
- 10. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance of at most 16 ohms.
- 11. The printhead of claim 5 further including power traces, and wherein the FET drive circuits are configured to compensate for a parasitic resistance presented by said power traces.
- 12. The printhead of claim 11 wherein respective on-resistances of said FET circuits are selected to compensate for variation of a parasitic resistance presented by said power traces.
- 13. The printhead of claim 12 wherein a size of each of said FET circuits is selected to set said on-resistance.
- 14. The printhead of claim 12 wherein each of said FET circuits includes:drain electrodes; drain regions; drain contacts electrically connecting said drain electrodes to said drain regions; source electrodes; source regions; source contacts electrically connecting said source electrodes to said source regions; and wherein said drain regions are configured to set an on-resistance of each of said FET circuits to compensate for variation of a parasitic resistance presented by said power traces.
- 15. The printhead of claim 14 wherein said drain regions comprise elongated drain regions each including a continuously non-contacted segment having a length that is selected to set said on-resistance.
- 16. The printhead of claim 5 wherein each of said columnar arrays of FET drive circuits is contained in a region having a width that is at most 180 micrometers.
- 17. The printhead of claim 5 wherein each of said columnar arrays of FET drive circuits is contained in a region having a width that is at most 250 micrometers.
- 18. The printhead of claim 5 wherein:said plurality of side by side columnar arrays of drop generators comprise four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; and said plurality of columnar arrays of FET drive circuits comprise four columnar arrays of FET drive circuits.
- 19. The printhead of claim 18 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
- 20. The printhead of claim 19 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
- 21. The printhead of claim 20 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
- 22. The printhead of claim 5 wherein said drop generators are configured to emit drops having a drop volume in the range of 12 to 19 picoliters.
- 23. The printhead of claim 5 wherein said drop generators are configured to emit drops having a drop volume in the range of 3 to 7 picoliters.
- 24. The printhead of claim 5 wherein each of said drop generators includes a heater resistor having a resistance that is at least 100 ohms.
- 25. The printhead of claim 5 wherein said printhead substrate has a length LS and a width WS, and wherein LS/WS is greater than 3.5.
- 26. The printhead of claim 25 wherein WS is about 3.29 millimeters or less.
- 27. The printhead of claim 25 wherein WS is in the range of about 3.29 millimeters to about 2.95 millimeters.
- 28. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; said plurality of side by side columnar arrays of drop generators comprising four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; drive circuits formed in said printhead substrate that energize each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
- 29. The printhead of claim 28 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
- 30. The printhead of claim 29 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
- 31. The printhead of claim 30 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5604519 |
Keefe et al. |
Feb 1997 |
A |