Compact ink jet printhead

Information

  • Patent Grant
  • 6422676
  • Patent Number
    6,422,676
  • Date Filed
    Tuesday, June 19, 2001
    23 years ago
  • Date Issued
    Tuesday, July 23, 2002
    21 years ago
Abstract
A compact thermal ink jet printhead including a printhead substrate, a plurality of side by side columnar arrays of drop generators formed in the printhead substrate, and drive circuits formed in the printhead substrate for energizing each ink drop generator. The printhead substrate has an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
Description




BACKGROUND OF THE INVENTION




The subject invention generally relates to ink jet printing, and more particularly to a thin film ink jet printhead having a high nozzle packing density.




The art of ink jet printing is relatively well developed. Commercial products such as computer printers, graphics plotters, and facsimile machines have been implemented with ink jet technology for producing printed media. The contributions of Hewlett-Packard Company to ink jet technology are described, for example, in various articles in the


Hewlett-Packard Journal,


Vol. 36, No. 5 (May 1985); Vol. 39, No. 5 (October 1988); Vol. 43, No. 4 (August 1992); Vol. 43, No. 6 (December 1992); and Vol. 45, No. 1 (February 1994); all incorporated herein by reference.




Generally, an ink jet image is formed pursuant to precise placement on a print medium of ink drops emitted by an ink drop generating device known as an ink jet printhead. Typically, an ink jet printhead is supported on a movable print carriage that traverses over the surface of the print medium and is controlled to eject drops of ink at appropriate times pursuant to command of a microcomputer or other controller, wherein the timing of the application of the ink drops is intended to correspond to a pattern of pixels of the image being printed.




A typical Hewlett-Packard ink jet printhead includes an array of precisely formed nozzles in an orifice plate that is attached to an ink barrier layer which in turn is attached to a thin film substructure that implements ink firing heater resistors and apparatus for enabling the resistors. The ink barrier layer defines ink channels including ink chambers disposed over associated ink firing resistors, and the nozzles in the orifice plate are aligned with associated ink chambers. Ink drop generator regions are formed by the ink chambers and portions of the thin film substructure and the orifice plate that are adjacent the ink chambers.




The thin film substructure is typically comprised of a substrate such as silicon on which are formed various thin film layers that form thin film ink firing resistors, apparatus for enabling the resistors, and also interconnections to bonding pads that are provided for external electrical connections to the printhead. The ink barrier layer is typically a polymer material that is laminated as a dry film to the thin film substructure, and is designed to be photodefinable and both UV and thermally curable. In an ink jet printhead of a slot feed design, ink is fed from one or more ink reservoirs to the various ink chambers through one or more ink feed slots formed in the substrate.




An example of the physical arrangement of the orifice plate, ink barrier layer, and thin film substructure is illustrated at page 44 of the


Hewlett-Packard Journal


of February 1994, cited above. Further examples of ink jet printheads are set forth in commonly assigned U.S. Pat. Nos. 4,719,477 and 5,317,346, both of which are incorporated herein by reference.




Considerations with thin film ink jet printheads include increased substrate size and/or substrate fragility as more ink drop generators and/or ink feed slots are employed. There is accordingly a need for an ink jet printhead that is compact and has a large number of ink drop generators.











BRIEF DESCRIPTION OF THE DRAWINGS




The advantages and features of the disclosed invention will readily be appreciated by persons skilled in the art from the following detailed description when read in conjunction with the drawing wherein:




The advantages and features of the disclosed invention will readily be appreciated by persons skilled in the art from the following detailed description when read in conjunction with the drawing wherein:





FIG. 1

is an unscaled schematic top plan view illustration of the layout of ink drop generators and primitive select of an ink jet printhead that employs the invention.





FIG. 2

is an unscaled schematic top plan view illustration of the layout of ink drop generators and ground busses of the ink jet printhead of FIG.


1


.





FIG. 3

is a schematic, partially broken away perspective view of the ink jet printhead of FIG.


1


.





FIG. 4

is an unscaled schematic partial top plan illustration of the ink jet printhead of FIG.


1


.





FIG. 5

is a schematic depiction of generalized layers of the thin film substructure of the printhead of FIG.


1


.





FIG. 6

is a partial top plan view generally illustrating the layout of a representative FET drive circuit array and a ground bus of the printhead of FIG.


1


.





FIG. 7

is an electrical circuit schematic depicting the electrical connections of a heater resistor and an FET drive circuit of the printhead of FIG.


1


.





FIG. 8

is a schematic plan view of representative primitive select traces of the printhead of FIG.


1


.





FIG. 9

is a schematic plan view of an illustrative implementation of an FET drive circuit and a ground bus of the printhead of FIG.


1


.





FIG. 10

is a schematic elevational cross sectional view of the FET drive circuit of FIG.


9


.





FIG. 11

is an unscaled schematic perspective view of a printer in which the printhead of the invention can be employed.











DETAILED DESCRIPTION OF THE DISCLOSURE




In the following detailed description and in the several figures of the drawing, like elements are identified with like reference numerals.




In the following detailed description and in the several figures of the drawing, like elements are identified with like reference numerals.




Referring now to

FIGS. 1-4

, schematically illustrated therein are unscaled schematic plan views and perspective views of an ink jet printhead


100


in which the invention can be employed and which generally includes (a) a thin film substructure or die


11


comprising a substrate such as silicon and having various thin film layers formed thereon, (b) an ink barrier layer


12


disposed on the thin film substructure


11


, and (c) an orifice or nozzle plate


13


laminarly attached to the top of the ink barrier


12


.




The thin film substructure


11


comprises an integrated circuit die that is formed for example pursuant to conventional integrated circuit techniques, and as schematically depicted in

FIG. 5

generally includes a silicon substrate


111




a,


an FET gate and dielectric layer


111




b,


a resistor layer


111




c,


and a first metallization layer


111




d.


Active devices such as drive FET circuits described more particularly herein are formed in the top portion of the silicon substrate


111




a


and the FET gate and dielectric layer


111




b,


which includes a gate oxide layer, polysilicon gates, and a dielectric layer adjacent the resistor layer


111




c.


Thin film heater resistors


56


are formed by the respective patterning of the resistor layer


111




c


and the first metallization layer


111




d.


The thin film substructure further includes a composite passivation layer


111




e


comprising for example a silicon nitride layer and a silicon carbide layer, and a tantalum mechanical passivation layer


111




f


that overlies at least the heater resistors


56


. A gold conductive layer


111




g


overlies the tantalum layer


111




f.






The ink barrier layer


12


is formed of a dry film that is heat and pressure laminated to the thin film substructure


11


and photodefined to form therein ink chambers


19


disposed over heater resistors


56


and ink channels


29


. Gold bonding pads


74


engagable for external electrical connections are formed in the gold layer at longitudinally spaced apart, opposite ends of the thin film substructure


11


and are not covered by the ink barrier layer


12


. By way of illustrative example, the barrier layer material comprises an acrylate based photopolymer dry film such as the “Parad” brand photopolymer dry film obtainable from E. I. duPont de Nemours and Company of Wilmington, Del. Similar dry films include other duPont products such as the “Riston” brand dry film and dry films made by other chemical providers. The orifice plate


13


comprises, for example, a planar substrate comprised of a polymer material and in which the orifices are formed by laser ablation, for example as disclosed in commonly assigned U.S. Pat. No. 5,469,199, incorporated herein by reference. The orifice plate can also comprise a plated metal such as nickel.




As depicted in

FIG. 3

, the ink chambers


19


in the ink barrier layer


12


are more particularly disposed over respective ink firing heater resistors


56


, and each ink chamber


19


is defined by interconnected edges or walls of a chamber opening formed in the barrier layer


12


. The ink channels


29


are defined by further openings formed in the barrier layer


12


, and are integrally joined to respective ink firing chambers


19


. The ink channels


29


open towards a feed edge of an adjacent ink feed slot


71


and receive ink from such ink feed slot.




The orifice plate


13


includes orifices or nozzles


21


disposed over respective ink chambers


19


, such that each ink firing heater resistor


56


, an associated ink chamber


19


, and an associated orifice


21


are aligned and form an ink drop generator


40


. Each of the heater resistors has a nominal resistance of at least 100 ohms, for example about 120 or 130 ohms, and can comprise a segmented resistor as shown in

FIG. 9

, wherein a heater resistor


56


is comprised of two resistor regions


56




a,




56




b


connected by a metallization region


59


. This resistor structure provides for a resistance that is greater than a single resistor region of the same area.




While the disclosed printheads are described as having a barrier layer and a separate orifice plate, it should be appreciated that the printheads can be implemented with an integral barrier/orifice structure that can be made, for example, using a single photopolymer layer that is exposed with a multiple exposure process and then developed.




The ink drop generators


40


are arranged in columnar arrays or groups


61


that extend along a reference axis L and are spaced apart from each other laterally or transversely relative to the reference axis L. The heater resistors


56


of each ink drop generator group are generally aligned with the reference axis L and have a predetermined center to center spacing or nozzle pitch P along the reference axis L. The nozzle pitch P can be {fraction (1/600)} inch or greater, such as {fraction (1/300)} inch. Each columnar array


61


of ink drop generators includes for example 100 or more ink drop generators (i.e., at least 100 ink drop generators).




By way of illustrative example, the thin film substructure


11


can be rectangular, wherein opposite edges


51


,


52


thereof are longitudinal edges of a length dimension LS while longitudinally spaced apart, opposite edges


53


,


54


are of a width or lateral dimension WS that is less than the length LS of the thin film substructure


11


. The longitudinal extent of the thin film substructure


11


is along the edges


51


,


52


which can be parallel to the reference axis L. In use, the reference axis L can be aligned with what is generally referred to as the media advance axis. For convenience, the longitudinally separated ends of the thin film substructure will also be referred to by the reference number


53


,


54


used to refer to the edges at such ends.




While the ink drop generators


40


of each columnar array


61


of ink drop generators are illustrated as being substantially collinear, it should be appreciated that some of the ink drop generators


40


of an array of ink drop generators can be slightly off the center line of the column, for example to compensate for firing delays.




Insofar as each of the ink drop generators


40


includes a heater resistor


56


, the heater resistors are accordingly arranged in columnar groups or arrays that correspond to the columnar arrays of ink drop generators. For convenience, the heater resistor arrays or groups will be referred to by the same reference number


61


.




The thin film substructure


11


of the printhead


100


of

FIGS. 1-4

more particularly includes two ink feed slots


71


that are aligned with the reference axis L, and are spaced apart from each other transversely relative to the reference axis L. The ink feed slots


71


respectively feed four columns


61


of ink drop generators respectively located on opposite sides of the two ink feed slots


71


, wherein the ink channels open towards an edge formed by an associated ink feed slot in the thin film substructure. In this manner, opposite edges of each ink feed slot forms a feed edge and each of the two ink feed slots comprises a dual edge ink feeding slot. By way of specific implementation, the printhead


100


of

FIGS. 1-4

is a monochrome printhead wherein both ink feed slots


71


provides ink of the same color such as black, such that all four columns


61


of ink drop generators produce ink drops of the same color.




The column pitch or spacing CP between columns on either side of an ink feed slot is less than or equal to 630 micrometers (μm) (i.e., at most 630 μm), and the column pitch or spacing CP′ between the columns that are inboard of the ink feed slots is less than or equal to 800 μm (i.e., at most 800 μm).




The nozzle pitch, the stagger or offset of the nozzles from one column to an adjacent column, along the reference axis L, and the ink drop volume are more particularly configured to enable a single pass, monochrome dot spacing along the reference axis L that is ¼th of the nozzle pitch P which is in the range of {fraction (1/300)} inch to {fraction (1/600)} inch. The drop volume can be in the range of 3 to 7 picoliters for dye based inks (as a specific example about 5 picoliters), and in the range of 12 to 19 picoliters of pigment based inks (as a specific example about 16 picoliters). For a nozzle pitch of {fraction (1/300)} inch the stagger or offset along the reference axis L between adjacent columns of nozzles in a given transverse direction can be {fraction (1/1200)} inch. In other words, the second column from the left is offset by {fraction (1/1200)} inch along a selected direction along the reference axis L relative to the leftmost column. The third column from the left is offset by {fraction (1/1200)} inch along the selected direction along the reference axis relative to the second column from the left. The fourth column from the left is offset by {fraction (1/1200)} inch along the selected direction along the reference axis L relative to the third column from the left.




Thus, a nozzle pitch P of {fraction (1/300)} inch would provide for a single pass dot spacing of {fraction (1/1200)} inch which corresponds to a single pass print resolution of 1200 dpi. A nozzle pitch P of {fraction (1/600)} inch would provide for a single pass dot spacing of {fraction (1/2400)} which corresponds to a single pass print resolution of {fraction (1/2400)} dpi.




More particularly for an implementation having four columnar arrays


61


each having at least 100 (e.g., 104) ink drop generators having a nozzle pitch P of {fraction (1/300)} inch, by way of illustrative example, the length LS of the thin film substructure


11


can be about 11.65 millimeters, and the width WS of the thin film substructure can be about 3.29 millimeters or less, such as in the range of about 2.95 millimeters to about 3.29 millimeters. Generally, the length/width aspect ratio (i.e., LS/WS) of the thin film substructure can be greater than 3.5.




In specific implementations having 100 to 104 ink drop generators per column, the printhead has a nozzle packing density in the range of 10.43 nozzles/mm


2


to 12.10 nozzles/mm


2


. More generally, the printhead has a nozzle packing density of at least 10.43 nozzles/mm


2


.




The ink drop generators are each capable of being driven at a maximum frequency in the range of about 15 kHz to about 18 kHz by drive circuitry. For example, respectively adjacent and associated with the columnar arrays


61


of ink drop generators


40


are columnar FET drive circuit arrays


81


formed in the thin film substructure


11


of the printhead


100


, as schematically depicted in

FIG. 6

for a representative columnar array


61


of ink drop generators. Each FET drive circuit array


81


includes a plurality of FET drive circuits


85


having drain electrodes respectively connected to respective heater resistors


56


by heater resistor leads


57




a.


Associated with each FET drive circuit array


81


and the associated array of ink drop generators is a columnar ground bus


181


to which the source electrodes of all of the FET drive circuits


85


of the associated FET drive circuit array


81


are electrically connected. Each columnar array


81


of FET drive circuits and the associated ground bus


181


extend longitudinally along the associated columnar array


61


of ink drop generators, and are at least longitudinally co-extensive with the associated columnar array


61


. Each ground bus


181


is electrically connected to at least one bond pad


74


at one end of the printhead structure and to at least one bond pad


74


at the other end of the printhead structure as schematically depicted in

FIGS. 1 and 2

.




The ground busses


181


and heater resistor leads


57




a


are formed in the metallization layer


111




c


(

FIG. 5

) of the thin film substructure


11


, as are the heater resistor leads


57




b,


and the drain and source electrodes of the FET drive circuits


85


described further herein.




The FET drive circuits


85


of each columnar array of FET drive circuits are controlled by an associated columnar array


31


of decoder logic circuits


35


that decode address information on an adjacent address bus


33


that is connected to appropriate bond pads


74


(FIG.


6


). The address information identifies the ink drop generators that are to be energized with ink firing energy, as discussed further herein, and is utilized by the decoder logic circuits


35


to turn on the FET drive circuit of an addressed or selected ink drop generator.




As schematically depicted in

FIG. 7

, one terminal of each heater resistor


56


is connected via a primitive select trace to a bond pad


74


that receives an ink firing primitive select signal PS. In this manner, since the other terminal of each heater resistor


56


is connected to the drain terminal of an associated FET drive circuit


85


, ink firing energy PS is provided to the heater resistor


56


if the associated FET drive circuit is ON as controlled by the associated decoder logic circuit


35


.




As schematically depicted in

FIG. 8

for a representative columnar array


61


of ink drop generators, the ink drop generators of a columnar array


61


of ink drop generators can be organized into four primitive groups


61




a,




61




b,




61




c,




61




d


of contiguously adjacent ink drop generators, and the heater resistors


56


of a particular primitive group are electrically connected to the same one of four primitive select traces


86




a,




86




b,




86




c,




86




d,


such that the ink drop generators of a particular primitive group are switchably coupled in parallel to the same ink firing primitive select signal PS. For the specific example wherein the number N of ink drop generators in a columnar array is an integral multiple of 4, each primitive group includes N/4 ink drop generators. For reference, the primitive groups


61




a,




61




b,




61




c,




61




d


are arranged in sequence from the lateral edge


53


toward the lateral edge


54


.





FIG. 8

more particularly sets forth a schematic top plan view of primitive select traces


86




a,




86




b,




86




c,




86




d


for an associated columnar array


61


of drop generators and an associated columnar array


81


of FET drive circuits


85


(

FIG. 6

) as implemented for example by traces in the gold metallization layer


111




g


(

FIG. 5

) that is above and dielectrically separated from the associated array


81


of FET drive circuit and ground bus


181


. The primitive select traces


86




a,




86




b,




86




c,




86




d


are respectively electrically connected to the four primitive groups


61




a,




61




b,




61




c,




61




d


by resistor leads


57




b


(

FIG. 8

) formed in the metallization layer


111




c


and interconnecting vias


58


(

FIG. 8

) that extend between the primitive select traces and the resistor leads


57




b.






The first primitive select trace


86




a


extends longitudinally along the first primitive group


61




a


and overlies a portion of heater resistor leads


57




b


(

FIG. 9

) that are respectively connected to heater resistors


56


of the first primitive group


61




a,


and is connected by vias


58


(

FIG. 9

) to such heater resistor leads


57




b.


The second primitive select trace


86




b


includes a section that extends along the second primitive group


61




b


and overlies a portion of heater resistor leads


57




b


(

FIG. 9

) that are respectively connected to heater resistors


56


of the second primitive group


61




b,


and is connected by vias


58


to such heater resistor leads


57




b.


The second trace


86




b


includes a further section that extends along the first primitive select trace


86




a


on the side of the first primitive select trace


86




a


that is opposite the heater resistors


56


of the first primitive group


61




a.


The second primitive select trace


86




b


is generally L-shaped wherein the second section is narrower than the first section so as to bypass the first primitive select trace


86




a


which is narrower than the wider section of the second primitive select trace


86




b.






The first and second primitive select traces


86




a,




86




b


are generally at least coextensive longitudinally with the first and second primitive groups


61




a,




61




b,


and are respectively appropriately connected to respective bond pads


74


disposed at the lateral edge


53


which is closest to the first and second primitive select traces


86




a,




86




b.






The fourth primitive select trace


86




d


extends longitudinally along the fourth primitive group


61




d


and overlies a portion of heater resistor leads


57




b


(

FIG. 9

) that are connected to heater resistors


56


of the fourth primitive group


61




d,


and is connected by vias


58


to such heater resistor leads


57




b.


The third primitive select trace


86




c


includes a section that extends along the third primitive group


61




c


and overlies a portion of heater resistor leads


57




b


(

FIG. 9

) that are connected to heater resistors


56


of the third primitive group


61




c,


and is connected by vias


58


to such heater resistor leads


57




b.


The third primitive select trace


86




c


includes a further section that extends along the fourth primitive select trace


86




d.


The third primitive select trace


86




c


is generally L-shaped wherein the second section is narrower than the first section so as to bypass the fourth primitive select trace


86




d


which is narrower than the wider section of the third primitive select trace


86




c.






The third and fourth primitive select traces


86




c,




86




d


are generally at least coextensive longitudinally with the third and fourth primitive groups


61




c,




61




d,


and are respectively appropriately connected to respective bond pads


74


disposed at the lateral edge


54


that is closest to the third and fourth primitive select traces


86




c,




86




d.






By way of specific example, the primitive select traces


86




a,




86




b,




86




c,




86




d


for a columnar array


61


of ink drop generators overlie the FET drive circuits and the ground bus associated with the columnar array of ink drop generators, and are contained in a region that is longitudinally coextensive with the associated columnar array


61


. In this manner, four primitive select traces for the four primitives of a columnar array


61


of ink drop generators extend along the array toward the ends of the printhead substrate. More particularly, a first pair of primitive select traces for a first pair of primitive groups


61




a,




61




b


disposed in one-half of the length of the printhead substrate are contained in a region that extends along such first pair of primitive groups, while a second pair of primitive select traces for a second pair of primitive groups


61




c,




61




d


disposed in the other half of the length of the printhead substrate are contained in a region that extends along such second pair of primitive groups.




For ease of reference, the primitive select traces


86


and the associated ground bus that electrically connect the heater resistors


56


and associated FET drive circuits


85


to bond pads


74


are collectively referred to as power traces. Also for ease of reference, the primitive select traces


86


can be referred to as to the high side or non-grounded power traces.




Generally, the parasitic resistance (or on-resistance) of each of the FET drive circuits


85


is configured to compensate for the variation in the parasitic resistance presented to the different FET drive circuits


85


by the parasitic path formed by the power traces, so as to reduce the variation in the energy provided to the heater resistors. In particular, the power traces form a parasitic path that presents a parasitic resistance to the FET circuits that varies with location on the path, and the parasitic resistance of each of the FET drive circuits


85


is selected so that the combination of the parasitic resistance of each FET drive circuit


85


and the parasitic resistance of the power traces as presented to the FET drive circuit varies only slightly from one ink drop generator to another. Insofar as the heater resistors


56


are all of substantially the same resistance, the parasitic resistance of each FET drive circuit


85


is thus configured to compensate for the variation of the parasitic resistance of the associated power traces as presented to the different FET drive circuits


85


. In this manner, to the extent that substantially equal energies are provided to the bond pads connected to the power traces, substantially equal energies can be provided to the different heater resistors


56


.




Referring more particularly to

FIGS. 9 and 10

, each of the FET drive circuits


85


comprises a plurality of electrically interconnected drain electrode fingers


87


disposed over drain region fingers


89


formed in the silicon substrate


111




a


(FIG.


5


), and a plurality of electrically interconnected source electrode fingers


97


interdigitated or interleaved with the drain electrodes


87


and disposed over source region fingers


99


formed in the silicon substrate


111




a.


Polysilicon gate fingers


91


that are interconnected at respective ends are disposed on a thin gate oxide layer


93


formed on the silicon substrate


111




a.


A phosphosilicate glass layer


95


separates the drain electrodes


87


and the source electrodes


97


from the silicon substrate


111




a.


A plurality of conductive drain contacts


88


electrically connect the drain electrodes


87


to the drain regions


89


, while a plurality of conductive source contacts


98


electrically connect the source electrodes


97


to the source regions


99


.




The area occupied by each FET drive circuit is preferably small, and the on-resistance of each FET drive circuit is preferably low, for example less than or equal to 14 or 16 ohms (i.e., at most 14 or 16 ohms), which requires efficient FET drive circuits. For example, the on-resistance Ron can be related to FET drive circuit area A as follows:







Ron


<(250,000 ohms·micrometers


2


)/


A






wherein the area A is in micrometers


2


(um


2


). This can be accomplished for example with a gate oxide layer


93


having a thickness that is less than or equal to 800 Angstroms (i.e., at most 800 Angstroms), or a gate length that is less than 4 μm. Also, having a heater resistor resistance of at least 100 ohms allows the FET circuits to be made smaller than if the heater resistors had a lower resistance, since with a greater heater resistor value a greater FET turn-on resistance can be tolerated from a consideration of distribution of energy between parasitics and the heater resistors.




As a particular example, the drain electrodes


87


, drain regions


89


, source electrodes


97


, source regions


99


, and the polysilicon gate fingers


91


can extend substantially orthogonally or transversely to the reference axis L and to the longitudinal extent of the ground busses


181


. Also, for each FET circuit


85


, the extent of the drain regions


89


and the source regions


99


transversely to the reference axis L is the same as extent of the gate fingers transversely to the reference axis L, as shown in

FIG. 6

, which defines the extent of the active regions transversely to the reference axis L. For ease of reference, the extent of the drain electrode fingers


87


, drain region fingers


89


, source electrode fingers


97


, source region fingers


99


, and polysilicon gate fingers


91


can be referred to as the longitudinal extent of such elements insofar as such elements are long and narrow in a strip-like or finger-like manner.




By way of illustrative example, the on-resistance of each of the FET circuits


85


is individually configured by controlling the longitudinal extent or length of a continuously non-contacted segment of the drain region fingers, wherein a continuously non-contacted segment is devoid of electrical contacts


88


. For example, the continuously non-contacted segments of the drain region fingers can begin at the ends of the drain regions


89


that are furthest from the heater resistor


56


. The on-resistance of a particular FET circuit


85


increases with increasing length of the continuously non-contacted drain region finger segment, and such length is selected to determine the on-resistance of a particular FET circuit.




As another example, the on-resistance of each FET circuit


85


can be configured by selecting the size of the FET circuit. For example, the extent of an FET circuit transversely to the reference axis L can be selected to define the on-resistance.




For a typical implementation wherein the power traces for a particular FET circuit


85


are routed by reasonably direct paths to bond pads


74


on the closest of the longitudinally separated ends of the printhead structure, parasitic resistance increases with distance from the closest end of the printhead, and the on-resistance of the FET drive circuits


85


is decreased (making an FET circuit more efficient) with distance from such closest end, so as to offset the increase in power trace parasitic resistance. As a specific example, as to continuously non-contacted drain finger segments of the respective FET drive circuits


85


that start at the ends of the drain region fingers that are furthest from the heater resistors


56


, the lengths of such segments are decreased with distance from the closest one of the longitudinally separated ends of the printhead structure.




Each ground bus


181


is formed of the same thin film metallization layer as the drain electrodes


87


and the source electrodes


97


of the FET circuits


85


, and the active areas of each of the FET circuits comprised of the source and drain regions


89


,


99


and the polysilicon gates


91


advantageously extend beneath an associated ground bus


181


. This allows the ground bus and FET circuit arrays to occupy narrower regions which in turn allows for a narrower, and thus less costly, thin film substructure.




Also, in an implementation wherein the continuously non-contacted segments of the drain region fingers start at the ends of the drain region fingers that are furthest from the heater resistors


56


, the extent of each ground bus


181


transversely or laterally to the reference axis L and toward the associated heater resistors


56


can be increased as the length of the continuously non-contacted drain finger sections is increased, since the drain electrodes do not need to extend over such continuously non-contacted drain finger sections. In other words, the width W of a ground bus


181


can be increased by increasing the amount by which the ground bus overlies the active regions of the FET drive circuits


85


, depending upon the length of the continuously non-contacted drain region segments. This is achieved without increasing the width of the region occupied by a ground bus


181


and its associated FET drive circuit array


81


since the increase is achieved by increasing the amount of overlap between the ground bus and the active regions of the FET drive circuits


85


. Effectively, at any particular FET circuit


85


, the ground bus can overlap the active region transversely to the reference axis L by substantially the length of the non-contacted segments of the drain regions.




For the specific example wherein the continuously non-contacted drain region segments start at the ends of the drain region fingers that are furthest from the heater resistors


56


and wherein the lengths of such continuously non-contacted drain region segments decrease with distance from the closest end of the printhead structure, the modulation or variation of the width W of a ground bus


181


with the variation of the length of the continuously non-contacted drain region segments provides for a ground bus having a width W


181


that increases with proximity to the closest end of the printhead structure, as depicted in FIG.


8


. Since the amount of shared currents increases with proximity to the bonds pads


74


, such shape advantageously provides for decreased ground bus resistance with proximity to the bond pads


74


.




Ground bus resistance can also be reduced by laterally extending portions of the ground bus


181


into longitudinally spaced apart areas between the decoder logic circuits


35


. For example, such portions can extend laterally beyond the active regions by the width of the region in which the decoder logic circuits


35


are formed.




The following circuitry portions associated with a columnar array of ink drop generators can be contained in respective regions having the following widths that are indicated in

FIGS. 6 and 8

by the reference designations that follow the width values.



















REGIONS THAT CONTAIN:




WIDTH













Resistor leads 57




About 95 micrometers (μm)








or less (W57)







FET circuits 81




At most 250 μm, or at most








180 μm, for example (W81)







Decode logic circuits 31




About 34 μm or less (W31)







Primitive select traces 86




About 290 μm or less (W86)















These widths are measured orthogonally or laterally to the longitudinal extent of the printhead substrate which is aligned with the reference axis L.




Referring now to

FIG. 11

, set forth therein is a schematic perspective view of an example of an ink jet printing device


20


in which the above described printheads can be employed. The ink jet printing device


20


of

FIG. 11

includes a chassis


122


surrounded by a housing or enclosure


124


, typically of a molded plastic material. The chassis


122


is formed for example of sheet metal and includes a vertical panel


122




a.


Sheets of print media are individually fed through a print zone


125


by an adaptive print media handling system


126


that includes a feed tray


128


for storing print media before printing. The print media may be any type of suitable printable sheet material such as paper, card-stock, transparencies, Mylar, and the like, but for convenience the illustrated embodiments described as using paper as the print medium. A series of conventional motor-driven rollers including a drive roller


129


driven by a stepper motor may be used to move print media from the feed tray


128


into the print zone


125


. After printing, the drive roller


129


drives the printed sheet onto a pair of retractable output drying wing members


130


which are shown extended to receive a printed sheet. The wing members


130


hold the newly printed sheet for a short time above any previously printed sheets still drying in an output tray


132


before pivotally retracting to the sides, as shown by curved arrows


133


, to drop the newly printed sheet into the output tray


132


. The print media handling system may include a series of adjustment mechanisms for accommodating different sizes of print media, including letter, legal, A-4, envelopes, etc., such as a sliding length adjustment arm


134


and an envelope feed slot


135


.




The printer of

FIG. 11

further includes a printer controller


136


, schematically illustrated as a microprocessor, disposed on a printed circuit board


139


supported on the rear side of the chassis vertical panel


122




a.


The printer controller


136


receives instructions from a host device such as a personal computer (not shown) and controls the operation of the printer including advance of print media through the print zone


125


, movement of a print carriage


140


, and application of signals to the ink drop generators


40


.




A print carriage slider rod


138


having a longitudinal axis parallel to a carriage scan axis is supported by the chassis


122


to sizeably support a print carriage


140


for reciprocating translational movement or scanning along the carriage scan axis. The print carriage


140


supports first and second removable ink jet printhead cartridges


150


,


152


(each of which is sometimes called a “pen,” “print cartridge,” or “cartridge”). The print cartridges


150


,


152


include respective printheads


154


,


156


that respectively have generally downwardly facing nozzles for ejecting ink generally downwardly onto a portion of the print media that is in the print zone


125


. The print cartridges


150


,


152


are more particularly clamped in the print carriage


140


by a latch mechanism that includes clamping levers, latch members or lids


170


,


172


.




For reference, print media is advanced through the print zone


125


along a media axis which is parallel to the tangent to the portion of the print media that is beneath and traversed by the nozzles of the cartridges


150


,


152


. If the media axis and the carriage axis are located on the same plane, as shown in

FIG. 9

, they would be perpendicular to each other.




An anti-rotation mechanism on the back of the print carriage engages a horizontally disposed anti-pivot bar


185


that is formed integrally with the vertical panel


122




a


of the chassis


122


, for example, to prevent forward pivoting of the print carriage


140


about the slider rod


138


.




By way of illustrative example, the print cartridge


150


is a monochrome printing cartridge while the print cartridge


152


is a tri-color printing cartridge.




The print carriage


140


is driven along the slider rod


138


by an endless belt


158


which can be driven in a conventional manner, and a linear encoder strip


159


is utilized to detect position of the print carriage


140


along the carriage scan axis, for example in accordance with conventional techniques.




Although the foregoing has been a description and illustration of specific embodiments of the invention, various modifications and changes thereto can be made by persons skilled in the art without departing from the scope and spirit of the invention as defined by the following claims.




Although the foregoing has been a description and illustration of specific embodiments of the invention, various modifications and changes thereto can be made by persons skilled in the art without departing from the scope and spirit of the invention as defined by the following claims.



Claims
  • 1. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; said plurality of side by side columnar arrays of drop generators comprising four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; drive circuits formed in said printhead substrate for energizing each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
  • 2. The printhead of claim 1 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
  • 3. The printhead of claim 2 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
  • 4. The printhead of claim 3 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
  • 5. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; drive circuits formed in said printhead substrate for energizing each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; said drive circuits comprising columnar arrays of FET drive circuits formed in said printhead substrate respectively adjacent said columnar arrays of drop generators, and ground busses that overlap active regions of said FET drive circuits; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
  • 6. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance that is less than (250,000 ohm·micrometers2)/A, wherein A is an area of such FET drive circuit in micrometers2.
  • 7. The printhead of claim 6 wherein each of said FET drive circuits has a gate oxide thickness that is at most 800 Angstroms.
  • 8. The printhead of claim 6 wherein each of said FET drive circuits has a gate length that is less than 4 micrometers.
  • 9. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance of at most 14 ohms.
  • 10. The printhead of claim 5 wherein each of said FET drive circuits has an on-resistance of at most 16 ohms.
  • 11. The printhead of claim 5 further including power traces, and wherein the FET drive circuits are configured to compensate for a parasitic resistance presented by said power traces.
  • 12. The printhead of claim 11 wherein respective on-resistances of said FET circuits are selected to compensate for variation of a parasitic resistance presented by said power traces.
  • 13. The printhead of claim 12 wherein a size of each of said FET circuits is selected to set said on-resistance.
  • 14. The printhead of claim 12 wherein each of said FET circuits includes:drain electrodes; drain regions; drain contacts electrically connecting said drain electrodes to said drain regions; source electrodes; source regions; source contacts electrically connecting said source electrodes to said source regions; and wherein said drain regions are configured to set an on-resistance of each of said FET circuits to compensate for variation of a parasitic resistance presented by said power traces.
  • 15. The printhead of claim 14 wherein said drain regions comprise elongated drain regions each including a continuously non-contacted segment having a length that is selected to set said on-resistance.
  • 16. The printhead of claim 5 wherein each of said columnar arrays of FET drive circuits is contained in a region having a width that is at most 180 micrometers.
  • 17. The printhead of claim 5 wherein each of said columnar arrays of FET drive circuits is contained in a region having a width that is at most 250 micrometers.
  • 18. The printhead of claim 5 wherein:said plurality of side by side columnar arrays of drop generators comprise four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; and said plurality of columnar arrays of FET drive circuits comprise four columnar arrays of FET drive circuits.
  • 19. The printhead of claim 18 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
  • 20. The printhead of claim 19 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
  • 21. The printhead of claim 20 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
  • 22. The printhead of claim 5 wherein said drop generators are configured to emit drops having a drop volume in the range of 12 to 19 picoliters.
  • 23. The printhead of claim 5 wherein said drop generators are configured to emit drops having a drop volume in the range of 3 to 7 picoliters.
  • 24. The printhead of claim 5 wherein each of said drop generators includes a heater resistor having a resistance that is at least 100 ohms.
  • 25. The printhead of claim 5 wherein said printhead substrate has a length LS and a width WS, and wherein LS/WS is greater than 3.5.
  • 26. The printhead of claim 25 wherein WS is about 3.29 millimeters or less.
  • 27. The printhead of claim 25 wherein WS is in the range of about 3.29 millimeters to about 2.95 millimeters.
  • 28. An ink jet printhead, comprising:a printhead substrate including a plurality of thin film layers; a plurality of side by side columnar arrays of drop generators formed in said printhead substrate and extending along a longitudinal extent; said plurality of side by side columnar arrays of drop generators comprising four side by side columnar arrays of drop generators, each columnar array of drop generators having at least 100 drop generators separated by a drop generator pitch P; drive circuits formed in said printhead substrate that energize each ink drop generator at a frequency in the range of about 15 kHz to about 18 kHz; and said printhead substrate having an ink drop generator packing density of at least 10.43 ink drop generators per square millimeter.
  • 29. The printhead of claim 28 wherein said four columnar arrays of drop generators comprise a first columnar array and a second columnar array separated from each other by at most 630 micrometers, and a third columnar array and a fourth columnar array separated from each other by at most 630 micrometers.
  • 30. The printhead of claim 29 further including a first ink feed slot and a second ink feed slot, and wherein:said first columnar array of drop generators and said second columnar array of drop generators disposed on either side of said first ink feed slot; and said third columnar array of drop generators and said fourth columnar array of drop generators disposed on either side of said second ink feed slot.
  • 31. The printhead of claim 30 wherein said second columnar array of drop generators and said third columnar array of drop generators are separated by at most 800 micrometers.
US Referenced Citations (1)
Number Name Date Kind
5604519 Keefe et al. Feb 1997 A