Claims
- 1. An electronic package for high frequency semiconductors, comprising:
a) a first circuit member having a top surface and a bottom surface and having at least one conductive pad disposed on one of said surfaces; b) at least one component located on at least one of said surfaces of said first circuit member and electrically connected to said conductive pad disposed on one of said surfaces of said first circuit member; c) a second circuit member having a top surface and a bottom surface and having at least one conductive pad disposed on one of said second circuit member surfaces; d) connector means disposed intermediate said first and second circuit members and including a contact member to provide electrical interconnection between said at least one conductive pad of said first circuit member and said at least one conductive pad of said second circuit member; and e) a clamp attached to said first and second circuit members to compress said contact member of said connector means.
- 2. The electronic package for high frequency semiconductors as recited in claim 1, further comprising alignment means operatively connected to at least one of said first or second circuit members for aligning said connector means thereto.
- 3. The electronic package for high frequency semiconductors as recited in claim 1, further comprising an interposer for higher risk or expensive processes, said interposer comprising a plurality of contact pads and a dielectric layer.
- 4. The electronic package for high frequency semiconductors as recited in claim 1, wherein said first circuit member is a circuit module.
- 5. The electronic package for high frequency semiconductors as recited in claim 1, wherein said second circuit member is a printed circuit board.
- 6. The electronic package for high frequency semiconductors as recited in claim 1, wherein at least one of said components is a semiconductor.
- 7. The electronic package for high frequency semiconductors as recited in claim 6, wherein said semiconductor comprises at least one from the group of: bare chip, thin, small-outline packages (TSOP), chip scale packages (CSP) and chip on board (COB).
- 8. The electronic package for high frequency semiconductors as recited in claim 1, wherein at least one of said components is selected from the group: resistors, capacitors and inductors.
- 9. The electronic package for high frequency semiconductors as recited in claim 1, wherein said connector means is a land grid array connector.
- 10. The electronic package for high frequency semiconductors as recited in claim 9, wherein said land grid array connector comprises a carrier/housing.
- 11. The electronic package for high frequency semiconductors as recited in claim 10, wherein said carrier/housing comprises an insulative material.
- 12. The electronic package for high frequency semiconductors as recited in claim 11, wherein said insulative material has a coefficient of thermal expansion (CTE) that substantially matches the CTE of said first and second circuit members.
- 13. The electronic package for high frequency semiconductors as recited in claim 1, wherein said clamp is reworkable.
- 14. The electronic package for high frequency semiconductors as recited in claim 1, wherein said clamp is field separable.
- 15. The electronic package for high frequency semiconductors as recited in claim 1, wherein said clamp is CTE mismatch tolerant.
- 16. The electronic package for high frequency semiconductors as recited in claim 1, wherein said first and second circuit members are substantially parallel to one another.
- 17. The electronic package for high frequency semiconductors as recited in claim 1, further comprising thermal management structures.
- 18. The electronic package for high frequency semiconductors as recited in claim 17, wherein said thermal management structures comprise heat-conductive fins in thermal contact with said at least one component.
- 19. The electronic package for high frequency semiconductors as recited in claim 17, wherein said thermal management structures comprise conformal pouches of liquid thermal transfer material.
- 20. The electronic package for high frequency semiconductors as recited in claim 17, wherein said thermal management structures comprise thin heat pipes.
- 21. The electronic package for high frequency semiconductors as recited in claim 17, wherein said thermal management structures comprise thermoelectric devices.
- 22. An electronic package for high frequency semiconductors, comprising: p1 a) a first circuit member having at least one conductive pad disposed thereon, and at least one component electrically connected to said at least one conductive pad;
b) a second circuit member having at least one conductive disposed thereon; c) connector means disposed intermediate said first and second circuit members and including a contact member to provide electrical interconnection between said at least one conductive pad of said first circuit member and said at least one conductive pad of said second circuit member; and d) a clamp attached to said first and second circuit members to compress said contact member of said connector means.
- 23. The electronic package for high frequency semiconductors as recited in claim 22, further comprising alignment means operatively connected to at least one of said first or second circuit members for aligning said connector means thereto.
- 24. The electronic package for high frequency semiconductors as recited in claim 22, further comprising an interposer for higher risk or expensive processes, said interposer comprising a plurality of contact pads and a dielectric layer.
- 25. The electronic package for high frequency semiconductors as recited in claim 22, wherein said first circuit member is a circuit module.
- 26. The electronic package for high frequency semiconductors as recited in claim 22, wherein said second circuit member is a printed circuit board.
- 27. The electronic package for high frequency semiconductors as recited in claim 22, wherein at least one of said components is a semiconductor.
- 28. The electronic package for high frequency semiconductors as recited in claim 27, wherein said semiconductor comprises at least one from the group of: bare chip, thin, small-outline packages (TSOP), chip scale packages (CSP) and chip on board (COB).
- 29. The electronic package for high frequency semiconductors as recited in claim 22, wherein at least one of said components is selected from the group: resistors, capacitors and inductors.
- 30. The electronic package for high frequency semiconductors as recited in claim 22, wherein said connector means is a land grid array connector.
- 31. The electronic package for high frequency semiconductors as recited in claim 30, wherein said land grid array connector comprises a carrier/housing.
- 32. The electronic package for high frequency semiconductors as recited in claim 31, wherein said carrier/housing comprises an insulative material.
- 33. The electronic package for high frequency semiconductors as recited in claim 32, wherein said insulative material has a coefficient of thermal expansion (CTE) that substantially matches the CTE of said first and second circuit members.
- 34. The electronic package for high frequency semiconductors as recited in claim 22, wherein said clamp is reworkable.
- 35. The electronic package for high frequency semiconductors as recited in claim 22, wherein said clamp is field separable.
- 36. The electronic package for high frequency semiconductors as recited in claim 22, wherein said clamp is CTE mismatch tolerant.
- 37. The electronic package for high frequency semiconductors as recited in claim 22, wherein said first and second circuit members are substantially parallel to one another.
- 38. The electronic package for high frequency semiconductors as recited in claim 22, further comprising thermal management structures.
- 39. The electronic package for high frequency semiconductors as recited in claim 38, wherein said thermal management structures comprise heat-conductive fins in thermal contact with said at least one component.
- 40. The electronic package for high frequency semiconductors as recited in claim 38, wherein said thermal management structures comprise conformal pouches of liquid thermal transfer material.
- 41. The electronic package for high frequency semiconductors as recited in claim 38, wherein said thermal management structures comprise thin heat pipes.
- 42. The electronic package for high frequency semiconductors as recited in claim 38, wherein said thermal management structures comprise thermoelectric devices.
RELATED PATENT APPLICATIONS
[0001] This application is related to U.S. Pat. No. 6,172,895, issued to Brown et al. for HIGH CAPACITY MEMORY MODULE WITH BUILT-IN HIGH SPEED BUS TERMINATIONS and copending U.S. patent applications, Ser. No. 09/457,776, filed Dec. 9, 1999, copending U.S. patent applications Ser. Nos. 09/645,860, 60/227,689, 60/227,859, 09/645,859, and 09/645,858, all filed Aug. 24, 2000; copending U.S. patent application Serial No. ______, [HCD-109], filed ______, 2001; and copending U.S. patent application Serial No. _______ [HCD-115], filed ______, 2001, all of which are hereby incorporated by reference.