Claims
- 1. A composite body consisting of a hard metal, cermet, steel or ceramic substrate body and at least one hard metal-carbonitride layer on said substrate body, the metal-carbonitride layer having a metal component consisting of at least two elements selected from the group consisting of Ti, Zr and Hf and the metal-carbonitride layer being deposited through a CVD process or a plasma activated CVD process in the form of a single-phase layer, the deposited layer having the composition Ti.sub.x Zr.sub.1-x)(C.sub.y N.sub.1-y) with 0.4<x<0.95 and 0.2<y<0.9 with a cubic surface-centered lattice structure, whose lattice constant lies within the range of 0.430 and 0.455 or the composition Ti.sub.x Hf.sub.1-x)(C.sub.y N.sub.1-y) with 0.4<x<0.95 and 0.2<v<0.9 with a cubic surface-centered lattice structure, whose lattice constant lies within the range of 0.430 and 0.450.
- 2. The composite body according to claim 1, wherein the substrate body is coated with several layers of carbides, nitrides and/or carbonitrides of Ti, Zr, Hf or Al.sub.2 O.sub.3 and at least one multimetal carbonitride layer.
- 3. The composite body according to claim 1, in the form of a cutting tool for machining processes.
- 4. A process for the production of a composite body consisting of a hard metal, cermet, steel or ceramic substrate body and at least one hard metal-carbonitride layer on said substrate body the metal-carbonitride layer having a metal component consisting of at least two elements selected from the group consisting of Ti, Zr and Hf and the metal-carbonitride layer being deposited through a CVD process or a plasma activated CVD process in the form of a single-phase layer, the deposited layer having the composition (Ti.sub.x Zr.sub.1-x)(C.sub.y N.sub.1-y) with 0.4<x<0.95 and 0.2<y<0.9 with a cubic surface-centered lattice structure, whose lattice constant lies within the range of 0.430 and 0.455 or the composition (Ti.sub.x Hf.sub.1-x)(C.sub.y N.sub.1-y) with 0.4<x<0.95 and 0.2<y<0.9 with a cubic surface-centered lattice structure, whose lattice constant lies within the range of 0.430 and 0.450, wherein the hard layer is applied by CVD, at a reaction temperature between 700.degree. C. and 1100.degree. C. and at pressures between 5 kPa and 100 kPa, from a gas phase which contains, besides H.sub.2 and/or argon as well as chlorides of different metals, also carbon and nitrogen donors which have a C--N-molecular group.
- 5. The process according to claim 4 wherein the C--N-molecular group contains a cyanide group-CN with a triple bond between the carbon and the nitrogen, whose distance at room temperatures ranges between 0.114 and 0.118 nm, by using acetonitrile.
- 6. The process according to claim 4 wherein the CN-molecular group contains molecular groups with a single bond between the carbon and the nitrogen.
- 7. The process according to one of claim 4 wherein the hard layer consists of (Ti,Zr)(C,N) or (Ti,Hf)(C,N).
- 8. A process for the production through a plasma-activated CVD process of quaternary carbonitride hard layers with at least two metals selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, on a substrate body of hard metal, cermet, steel or a ceramic, wherein a plasma activated CVD process is carried out in a reactive gas atmosphere at a reaction temperature and wherein the gas atmosphere contains besides hydrogen, argon, two or more different chlorides of said metals, also ionized and/or nonionized carbon-nitrogen donors with triple bonds, whereby the bond distance between the carbon and the nitrogen at room temperature ranges between 0.114 and 0.118 nm.
- 9. The process according to claim 8 wherein the ionized and the nonionized C--N-donors are produced through dissociation from gases with cyanide groups by means of plasma activation at temperatures between 400.degree. C. and 700.degree. C.
- 10. The process according to claim 8 wherein the reaction mixture contains acetonitrile as a carbon-nitrogen donor.
- 11. The process according to claim 8, wherein the carbon-nitrogen donors in the reaction mixture also contains CN-groups with a single bond between the carbon and the nitrogen.
- 12. Process according to claim 8, wherein at least one hard layer of a multilayer coating consists of (Ti,Zr)(C,N) and/or of (Ti,Hf)(C,N).
- 13. Process according to claim 8, wherein the plasma activation is performed at the substrate body connected as a cathode with a pulsed direct voltage.
Priority Claims (2)
| Number |
Date |
Country |
Kind |
| 195 30 517 |
Aug 1995 |
DEX |
|
| 195 30 518 |
Aug 1995 |
DEX |
|
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a national stage of PCT/DE 96/01425 filed Jul. 27, 1996 and based, in turn, on German national applications 195 30 517.5 and 195 30 518.3 filed Aug. 19, 1995 under the international convention.
PCT Information
| Filing Document |
Filing Date |
Country |
Kind |
102e Date |
371c Date |
| PCT/DE96/01425 |
7/27/1996 |
|
|
12/30/1997 |
12/30/1997 |
| Publishing Document |
Publishing Date |
Country |
Kind |
| WO97/07260 |
2/27/1997 |
|
|
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