A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C. is provided. The apparatus has an NZP or an NZP-type coating, which comprises a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12-x. The metal cation is disposed within an interstitial site defined by the crystalline structure.
Description
BRIEF DESCRIPTION OF DRAWING FIGURES
FIG. 1 is a schematic cross-sectional view of an article comprising an embodiment of the invention.
Claims
1. A processing apparatus for use in a semiconductor processing chamber, the apparatus comprising:
a base substrate for placing a wafer thereon, the base substrate has a coefficient of thermal expansion (CTE),at least one electrode embedded in or disposed on or under the base substrate, selected from a resistive heating electrode, a plasma-generating electrode, an electrostatic chuck electrode, and an electron-beam electrode, the electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate CTE;at least a coating layer disposed on the base substrate, the coating layer comprising a composition capable of forming an NZP-type coating which comprises:a first composition and a second composition, wherein the first composition and the second composition are capable of forming a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms, whereinthe first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series,the second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum, andthe one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon, andthe first composition and the second composition are related as shown bythe formula
L,M1,M2,Zn,Ag,Ga,In,Ln,Y,Sc)l(Zr,V,Ta,Nb,Hf,Ti,Al,Cr,Ln)m(P,Si,B,V,Al)n(O,C,N)w wherein L=alkali, M1=alkaline earth, M2=transition metal, Ln=rare earth; l, m, n are so chosen that a charge balance is maintained; and w=12 or 24;wherein the apparatus is exposed to a corrosive operating environment at a temperature range of 25-1500° C. selected from one of: an environment comprising halogen, a plasma etching environment, a reactive ion etching environment, a plasma cleaning environment, and a gas cleaning environment.
2. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises boron.
3. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer aluminum.
4. The processing apparatus as defined in claim 1, wherein the one or more shared atoms in the coating layer comprise nitrogen.
5. The processing apparatus as defined in claim 1, wherein the one or more shared atoms in the coating layer comprise carbon.
6. The processing apparatus as defined in claim 1, wherein the first composition in the coating layer comprises phosphorus and the one or more shared atoms comprise nitrogen.
7. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises silicon and the one or more shared atoms comprise nitrogen.
8. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises boron and the one or more shared atoms comprise nitrogen.
9. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises aluminum and the one or more shared atoms comprise nitrogen.
10. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises phosphorus and the one or more shared atoms comprise carbon.
11. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises silicon and the one or more shared atoms comprise carbon.
12. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises boron and the one or more shared atoms comprise carbon.
13. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises aluminum and the one or more shared atoms comprise carbon.
14. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises boron and the one or more shared atoms comprise oxygen.
15. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises aluminum and the one or more shared atoms comprise oxygen.
16. The processing apparatus as defined in claim 1, wherein the second composition in the coating layer comprises two or more of P, Si, Al, V or B.
17. The processing apparatus as defined in claim 1, wherein the ratio of the first composition to the second composition in the coating layer is 1:1.5.
18. The processing apparatus as defined in claim 1, wherein the metal cation in the coating layer is a metal of Group I of the periodic table of elements, is a metal of Group II of the periodic table of elements, is a metal of the Lanthanide series, or is a transition metal.
19. The processing apparatus as defined in claim 18, wherein the metal cation in the coating layer comprises three or more of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ga, In, Ag, Zn, Cr, Mn, Fe, Co, La, Lu, or a metal of the Lanthanide series.
20. The processing apparatus as defined in claim 1, wherein the first composition in the coating layer comprises zirconium.
21. The processing apparatus as defined in claim 1, wherein the metal cation in the coating layer is present in an amount, or absent, sufficient that the interstitial sites are one or more of:
empty,fully occupied, orpartially occupied.
22. The processing apparatus as defined in claim 1, wherein the metal cation in the coating layer is present in an amount sufficient that the interstitial sites are off a stoichiometric balance.
23. The processing apparatus as defined in claim 1, wherein the coating layer further comprising a plurality of particles dispersed therein.
24. The processing apparatus as defined in claim 23, wherein the particles in the coating layer comprise aluminum nitride, silicon carbide, or both aluminum nitride and silicon carbide.
25. The processing apparatus as defined in claim 21, wherein the particles in the coating layer have an average particle size that less than about 50 micrometers.
26. The processing apparatus as defined in claim 1, wherein the coating layer has the property of a coefficient of thermal expansion in a range of from about 2.2 to about 2.4.
27. The processing apparatus as defined in claim 1, wherein the coating layer has an etch rate of less than 100 Angstroms per min when exposed to the corrosive operating environment at a temperature in a range of greater than about 100 degrees Celsius.
28. The processing apparatus as defined in claim 27, wherein the coating layer has an etch rate of less than 50 Angstroms per min when exposed to the corrosive operating environment at a temperature in a range of greater than about 100 degrees Celsius.
29. The processing apparatus as defined in claim 28, wherein the coating layer has an etch rate of less than 50 Angstroms per min when exposed to the corrosive operating environment at a temperature in a range of greater than about 400 degrees Celsius.
30. The processing apparatus as defined in claim 29, wherein the coating layer has an etch rate of less than 50 Angstroms per min when when exposed to the corrosive operating environment at a temperature in a range of greater than about 650 degrees Celsius.
31. The processing apparatus as defined in claim 1, wherein the coating layer when exposed to 18 weight percent feedstock gas at about 400 degrees Celsius comprising oxygen gas and at least one of carbon tetrachloride gas or nitrogen fluoride gas has an etch rate of less than about 10 Angstroms per minute.
32. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula (Ca0.5-x, Mgx)Zr2(PO4)3 where x ranges between 0.05 and 0.45.
33. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula RZr4P6O24 wherein R is one or more cations of group IIa in the periodic table.
34. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula R1-Y4+ RY1+ RY3+ V2-X PX O7, wherein X is from about 0.1 to about 1.9, Y is from about 0.0 to about 0.4, and wherein R4+ selected from the group consisting of Hf, Zr, Zra Mb, Hfa Mb and mixtures thereof, wherein a+b=1, M is selected from the group consisting of Ti, Ce, Th, U, Mo, Pt, Pb, Sn, Ge and Si, R1+ is selected from alkali earth metals, and R3+ is selected from the group of rare earth metals.
35. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula R1+XM4P6-2XSi2XO24 wherein X is between 0.2 and 0.8, R is one or more cations of group IIa in the periodic table, and M is selected from the group consisting of Hf, Zr, Zra Mb, Hfa Mb and mixtures thereof.
36. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula A2-X3+ Ay4+ Mz3+ M3-y6+ PyO12 where A3+ is a metal having an oxidation state of +3, A4+ is a metal having an oxidation state of +4, M3+ is a metal having an oxidation state of +3, M6+ is a metal having an oxidation state of +6, 0<=y<=2, 0.1<=x<=1.9; and x=y+z.
37. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer is of the formula Rx Z4 P6-y Siy O24, wherein 0<=x<=8, 0<=y <=6, R is selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Y, lanthanides, and combinations thereof; Z is selected from the group consisting of Zr, Ti, Nb, Ta, Y, lanthanides, and combinations thereof.
38. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer has a crystalline structure indicated by the formula:
(L,M1,M2,Zn,Ag,Ga,In,Ln,Y,Sc)l(Zr,V,Ta,Nb,Hf,Ti,Al,Cr,Ln)m(P,Si,V,B,Al)n(O,C,N)w
39. The processing apparatus as defined in claim 1, wherein the NZP-type coating layer has a CTE that is within about 10 percent of the substrate CTE.
40. The processing apparatus as defined in claim 1, wherein the base substrate comprises an electrically conducting material selected from the group of graphite, refractory metals, transition metals, rare earth metals and alloys thereof.
41. The processing apparatus as defined in claim 1, wherein the base substrate comprises an electrically insulating material selected from the group of oxides, nitrides, carbides, carbonitrides or oxynitrides of elements selected from a group consisting of B, Al, Si, Ga, Y; a high thermal stability zirconium phosphate having an NZP structure of NaZr2(PO4)3; refractory hard metals; transition metals; oxide, oxynitride of aluminum, and combinations thereof.
42. A processing apparatus for use in a corrosive operating environment at a temperature range of 25-1500° C., the apparatus comprising:
a base substrate having a coefficient of thermal expansion (CTE), the base substrate comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof;at least one electrode disposed on the base substrate, the electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate CTE;an NZP-type coating layer disposed on a surface of the base substrate, the coating layer comprising:a first composition and a second composition, wherein the first composition and the second composition are capable of forming a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms, whereinthe first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series,the second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum, andthe one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon, andthe first composition and the second composition are related as shown by the formula
L,M1,M2,Zn,Ag,Ga,In,Ln,Y,Sc)l(Zr,V,Ta,Nb,Hf,Ti,Al,Cr,Ln)m(P,Si,B,V,Al)n(O,C,N)w
43. The processing apparatus of claim 42, wherein the NZP-type coating layer has an electrical resistivity in a range of from about 1×1015 to about 1×1018, and an dielectric constant of greater than about 7.
44. The processing apparatus of claim 42, further comprising a second coating layer disposed on the NZP-type coating layer, the second coating layer comprising at least one of an oxide, nitride, oxynitride, carbide, or nitride of one or more elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof.
45. The processing apparatus of claim 42, further comprising a second coating layer disposed under the NZP-type coating layer, the second coating layer comprising at least one of an oxide, nitride, oxynitride, carbide, or nitride of one or more elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof.
46. The processing apparatus of claim 42, wherein the NZP-type coating layer has a porosity of less than about 5 volume percent.
47. The processing apparatus of claim 42, wherein the NZP-type coating layer has a thermal diffusivity greater than about 6×10−7 m2/sec.
48. The processing apparatus of claim 42, wherein the NZP-type coating layer CTE is about 2.3.
49. A method for producing a wafer processing apparatus, comprising the steps of:
providing a base substrate comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof;depositing a film electrode onto the base substrate, the film electrode has a CTE ranging from 0.75 to 1.25 of the base substrate layer;coating the base substrate and the film electrode with a coating layer having a CTE ranging from 0.75 to 1.25 of the film electrode,
Patent Application
20070221132
