Claims
- 1. A method of producing a low dielectric constant polymer, comprising:
providing a thermosetting monomer having the structure 10wherein Y is selected from a cage compound and a silicon atom, and R1, R2, R3, and R4 are independently selected from an aryl, a branched aryl, and an arylene ether, and wherein at least one of the aryl, the branched aryl, and the arylene ether has a triple bond; and incorporating the thermosetting monomer into a polymer thereby forming the low dielectric constant polymer, wherein the incorporation into the polymer comprises a chemical reaction of the triple bond.
- 2. The method of claim 1 wherein Y is selected from the group consisting of an adamantane, and a diamantane.
- 3. The method of claim 1 wherein the aryl comprises a moiety selected from the group consisting of a tolanyl, a phenylethynylphenylethynylphenyl, and a p-tolanylphenyl.
- 4. The method of claim 1 wherein the branched aryl comprises a 1,2-bis(phenylethynyl)phenyl.
- 5. The method of claim 1 wherein the arylene ether comprises a p-tolanylphenyl ether.
- 6. The method of claim 1 wherein at least three of the aryl, the branched aryl, and the arylene ether have a triple bond, and wherein the incorporation into the polymer comprises a chemical reaction of the at least three triple bonds.
- 7. The method of claim 1 wherein all of the aryl, the branched aryl, and the arylene ether have a triple bond, and wherein the incorporation into the polymer comprises a chemical reaction of all of the triple bonds.
- 8. The method of claim 1 wherein R1, R2, R3 and R4 have a total length L, and the low dielectric constant polymer has a dielectric constant K, and wherein K decreases when L increases.
- 9. The method of claim 1 wherein the polymer comprises a poly(arylene ether).
- 10. The method of claim 1 wherein the step of incorporating the thermosetting monomer into the polymer takes place without participation of an additional molecule.
- 11. A method of producing a low dielectric constant polymer, comprising:
providing a thermosetting monomer having the structure 11wherein Ar is an aryl, and R′1, R′2, R′3, R′4, R′5, and R′6 are independently selected from an aryl, a branched aryl, an arylene ether, and nothing, and wherein each of the aryl, the branched aryl, and the arylene ether have at least one triple bond; and incorporating the thermosetting monomer into a polymer thereby forming the low dielectric constant polymer, wherein the incorporation into the polymer comprises a chemical reaction of the at least one triple bond.
- 12. The method of claim 11 wherein the aryl comprises a phenyl group.
- 13. The method of claim 12 wherein Ar is selected from the group consisting of a phenyl group and a sexiphenylene.
- 14. The method of claim 11 wherein R′1, R′2, R′3, R′4, R′5 and R′6 have a total length L, and the low dielectric constant polymer has a dielectric constant K, and wherein K decreases when L increases.
- 15. The method of claim 11 wherein the step of incorporating the thermosetting monomer into the polymer takes place without participation of an additional molecule.
- 16. The method of claim 11 wherein the polymer comprises a poly(arylene ether).
- 17. A thermosetting monomer having the structure
- 18. A thermosetting monomer having the structure
- 19. A thermosetting monomer having a structure according to formula TM-1:
- 20. A thermosetting monomer having a structure according to formula TM-2:
- 21. A thermosetting monomer having a structure according to formula TM-3:
- 22. An electrical device including a dielectric layer comprising a polymer fabricated from at least one thermosetting monomer from the group consisting of:
- 23. A dielectric material comprising a polymer fabricated from at least one thermosetting monomer from the group consisting of:
- 24. The dielectric material of claim 23 wherein said polymer is fabricated from at least one thermosetting monomer from the group consisting of:
- 25. A layer comprising the dielectric material of claim 23.
- 26. A layer comprising the dielectric material of claim 24.
- 27. A film comprising the dielectric material of claim 23.
- 28. A film formed from the dielectric material of claim 24.
- 29. The film of claim 27 wherein the dielectric constant is less than 3.
- 30. The film of claim 28 wherein the dielectric constant is less than 3.
Parent Case Info
[0001] This patent application is a continuation-in-part of pending U.S. Ser. 09/618,945 filed Jul. 19, 2000.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09618945 |
Jul 2000 |
US |
Child |
09897936 |
Jul 2001 |
US |