Compositions of polyaniline made with perfuoropolymeric acid which are heat-enhanced and electronic devices made therewith

Abstract
Electrically conductive dispersions of high pH polyaniline/perfluorosulfonic acid or perfluoroalkylene sulfonamide polymers are provided. Also provided are films made with such dispersions having enhanced electrical conductivity. Devices are provided with at least one layer comprised of a film that is baked at a temperature above 100° C. Further provided are processes for making films and layers for devices comprising such films.
Description
FIELD OF THE DISCLOSURE

This disclosure relates to alkylammonium and alkali cation compositions of electrically conducting polyaniline made with a perfluoropolymeric acid. The disclosure also relates to a range of specifications of the electrically conducting polymers and applications thereof.


BACKGROUND

Electrically conducting polymers have been used in a variety of organic electronic devices, including in the development of electroluminescent (“EL”) devices for use in light emissive displays. With respect to EL devices, such as organic light emitting diodes (OLEDs) containing conducting polymers, such devices generally have the following configuration:

    • anode/buffer layer/EL material/cathode


The anode is typically any material that is transparent and has the ability to inject holes into the EL material, such as, for example, indium/tin oxide (ITO). The anode is optionally supported on a glass or plastic substrate. EL materials include fluorescent dyes, fluorescent and phosphorescent metal complexes, conjugated polymers, and mixtures thereof. The cathode is typically any material (such as, e.g., Ca or Ba) that has the ability to inject electrons into the EL material.


The buffer layer is typically an electrically conducting polymer and facilitates the injection of holes from the anode into the EL material layer. The buffer layer can also be called a hole-injection layer, a hole transport layer, or may be characterized as part of a bilayer anode. Typical conducting polymers employed as buffer layers include polyaniline and polydioxythiophenes such as poly(3,4-ethylenedioxythiophene) (PEDT).


There are provided herein needed film forming polymers at pH ranges sufficient to avoid device degradation but which are also useful in semiconducting device layers.


SUMMARY

There is provided:


An aqueous dispersion of polyaniline and at least one fluorinated polymeric acid selected from perfluorosulfonic acids and perfluoroalkylenesulfonimides.


In an embodiment, the perfluorosulfonic acids comprise perfluoro-olefins containing perfluorosulfonic acid side chains.


The dispersion may also comprise a cation composition. In some embodiments, the cation composition may be selected from ammonium, ammoniumalkyl, and alkali metal base water solutions.


The aqueous solutions may form films that are electrically conductive.


The films in some embodiments have a pH greater than 2.0, and in other embodiments, a pH greater than 4.0.


The films' electrically conductive properties may be enhanced by heat treatment. In some embodiments, the films are heat treated at a temperature above 100° C.


Also provided are devices comprising a film comprising an aqueous dispersion as disclosed above, and in some embodiments are provided devices including layers comprising such films.


DISCLOSURE

This disclosure relates to enhanced electrical conductivity of heat-treated films cast from high pH aqueous conducting polyaniline dispersions. The polyaniline is made from polymerization of aniline in the presence of a perfluoropolymericsulfonic acid or a perfluoroalkylenesulfonimide. The conducting polyaniline films are baked at temperatures above 100° C. in either air or nitrogen. High pH is obtained from adding ammonium, ammoniumalkyl, or alkali metal base water solution to the conducting polyaniline dispersion to greater than pH 2, preferably than pH 4. Concentration of the cation for forming salt with available acid is in the range of 1×10−4 mole to 2×10−3 mole per one-gram conducting polyaniline polymer.


The perfluoropolymeric acid comprises, but is not limited to, perfluoro-olefins which contain perfluorosulfonic acid side chains and perfluoroalkylenesulfonimides. The acids can be either water soluble or exist as colloids.


PKa of the perfluoropolymeric acids in water is preferably less than −5.


The electrically conducting polyanilines are made with perfluoropolymeric acid/aniline in molar ratio of 0.3 to 10, preferably 1 to 5, co-acid/monomer in molar ratio of 0.05 to 4, and solid weight % between 0.5 to 12, preferably between 2 to 8. The co-acid is preferably HCl.


OLEDs are typified in the following configuration: ITO(anode)/buffer layer/HTL(hole-transporting layer, optional)/EML(electroluminescence layer)/EIL(electron-injection layer)/cathode. Other optional layers may be included. The electrically conducting polyanilines are used as hole injection layers to improve electrical conductivity of the layer and lifetime of OLEDs.


Polyaniline emeraldine base contains a quinoid ring in every four aniline rings in polymer chain backbones. It is partially oxidized, but electrically non-conductive. The emeraldine base can be doped into electrically conductive emeraldine salt by protonic acids [Mol. Cryst. Liqu. Cryst., 151, 160 (1988)], which protonates imine nitrogen. It has been long established that every two aniline rings requires one protonic acid for forming acid/base salt.







EXAMPLES
Example 1

This example illustrates synthesis of polyaniline (PAni)/Nafion®, a poly(tetrafluoroethylene)/perfluoroethersulfonic acid, and ammonium cation composition of a high pH PAni/Nafion®.


A PAni/Nafion® dispersion used in this example was prepared using an aqueous Nafion® colloidal dispersion having an EW (acid equivalent weight) of 1000. The Nafion® dispersion at 25% (w/w) was made using a procedure similar to the procedure in U.S. Pat. No. 6,150,426, Example 1, Part 2, except that the temperature was approximately 270° C. and was then diluted with water to form a 12.0% (w/w) dispersion for the polymerization.


Aniline monomer was polymerized in the presence of the Nafion® dispersion as described in published U.S. Patent Application 2004-0127637. The reaction was quenched after about 20 hrs, 90 g of each Dowex™ M31, and Dowex™ M43 ion exchange resins, and 10 g n-propanol (30% v/v)/water were added to the reaction mixture and stirring it further overnight at 120 RPM. Both resins are from Dow Chemicals company (Midland, Mich., USA). The ion-exchange resins were finally filtered from the suspension through VWR 417 filter paper. The entire filtered dispersion was then pumped through an orifice of a Microfluidizer Processor M-110Y (Microfluidics, Massachusetts, USA) in one pass at 5,000 psi. pH of the dispersion was about 2. 160 g of the dispersion was added with ammonium hydroxide solution to adjust pH to 5.0.


The pH 5 dispersion was green in color and was measured to contain 6.2% PAni/Nafion® polymer. UV/V is spectrum of a solid film cast from the dispersion and subsequently dried at 50° C. shows an absorption peak at 764 nm in spite of the high pH. The distinct absorption peak reveals that the polyaniline is emeraldine salt, which is electrically conductive. The emeraldine polaniline salt is a well-known structure, where every two anilines requires one sulfonic acid of Nafion® for forming the emeraldine salt. Ion chromatography analysis of the pH 5.0 dispersion shows that it contains 797.3×10−6 g NH4+, 16.5×10−6 g chloride, 40.3×10−6 g sulfate in one gram dispersion. The ion concentration is approximately equivalent to 44.2×10−6 mole NH4+, 0.5×10−6 mole chloride, and 0.4×10−6 mole sulfate, respectively, per one gram of the dispersion. The charge balance of the three ions leaves 43×10−6 mole NH4+ available for association with sulfonic acid of Nafion®. Based on the solid %, mole ratio of Nafion® with respect to aniline used in the polymerization, the dispersion contains about 58×10−6 mole sulfonic acid group and 48×10−6 mole aniline per one-gram dispersion. The amount aniline takes up 24 mmole sulfonic acid per one-gram dispersion to form emeradine ammonium salt. Remaining free sulfonic acid in the Nafion® is about 34 mmole, which is less than NH4+ in the dispersion. In spite of the excessive amount of NH4+, the emeraldine base of the polymer film remains doped to show the distinct absorption of emeraldine salt. 43×10−6 mole NH4+ per one gram of the dispersion is equivalent to 6.9×10−4 mole NH4+ per one-gram PAni/Nafion®.


Example 2

This example illustrates the effect of ammonium cation concentration and heat treatment in nitrogen atmosphere on conductivity of PAni/Nafion®.


A new batch of PAni/Nafion® dispersion synthesized according to the procedure and recipe described in Example 1. The dispersion was also resin-treated and microfluidized. Before addition of an aqueous ammonium hydroxide solution, pH of the dispersion was also 2.0 as illustrated in Example 1. The dispersion, green in color as expected for emeraldine polyaniline salt structure, was measured to contain 5.87% solid. Ion chromatography analysis shows that the dispersion contains 107.9×10−6 g NH4+ per one gram of the dispersion. It also contains 107.0×10−6 g chloride and 43.0×10−6 g sulfate per one-gram dispersion. The ion concentration is approximately equivalent to 6.0×10−6 mole NH4+, 3.1×10−6 mole chloride, and 0.5×10−6 mole sulfate per one gram of the dispersion, respectively. Charge balance of the three ions leaves 2.0×10−6 mole NH4+ available for association with sulfonic acid of Nafion®. Based on the solid %, and mole ratio of Nafion® with respect to aniline used in the polymerization, the dispersion contains about 55×10−6 mole sulfonic acid group and 45.8×10−6 mole aniline per one gram of the dispersion. The amount aniline takes up 23×10−6 mole sulfonic acid per one-gram dispersion for forming emeraldine ammonium salt. Remaining free sulfonic acid in the Nafion® is about 32×10−6 mole, which is much higher than that of available NH4+ (2.0×10−6 mole), which is expected because of low pH of the dispersion. 2.0×10−6 mole NH4+ per one-gram dispersion is equivalent to 0.34×10−4 mole NH4+ per one gram of PAni/Nafion®.


A portion of pH 2.0 dispersion was added with ammonium hydroxide to increase the pH to 5.0. The dispersion is still green in color. The pH 2.0 and pH 5.0 PAni/Nafion® dispersions were spin-coated separately on resistance measurement substrates. Each substrate contains parallel ITO lines as electrodes. They were then baked at either 130° C. or 200° C. in nitrogen for 10 minutes. The data summarized in Table 1 shows that conductivity of pH 5.0 PAni/Nafion® is one order magnitude, and at least two-order magnitude higher than that of pH2.0 PAni/Nafion® upon baking at 130° C., and 200° C. respectively. The comparative data demonstrates that high pH PAni/Nafion® baked at high temperature and nitrogen atmosphere has greatly enhanced conductivity than pH 2 PAni/Nafion®.









TABLE 1







Effect of pH and baking (in nitrogen)


temperature on Electrical Conductivity









Electrical conductivity (S/cm)









Sample
130° C.
200° C.





pH 2.0 PAni/Nafion ®
1.1 × 10−7
7.0 × 10−7


PH 5.0 PAni/Nafion ®
1.1 × 10−6
1.0 × 10−4









Example 3

This example illustrates effect of heat treatment in air and inert atmosphere on conductivity of pH 5.11 PAni/Nafion®.


A new batch of PAni/Nafion® dispersion was synthesized according to the procedure and recipe described in Example 1. The dispersion was also resin-treated and microfluidized. Before addition of an aqueous ammonium hydroxide solution, pH of the dispersion was 1.92. The dispersion was green in color as expected for emeraldine polyaniline salt structure. A portion of pH 1.92 dispersion was added with ammonium hydroxide to increase the pH to 5.11. The dispersion was still green in color. The pH 5.11 PAni/Nafion® dispersions were spin-coated on resistance measurement substrates. Each substrate contains parallel ITO lines as electrodes. They were then baked at either at 130° C. or 200° C. in air first for 10 minutes and resistance was measured for calculation of conductivity. They were then subjected to additional baking at 200° C. for 40 minutes in nitrogen. Resistance was measured again. The conductivity data summarized in Table 2 shows that pH 5.11 PAni/Nafion®, which contains large amount ammonium cation as illustrated in Example 2, has increased in conductivity in either nitrogen or air. The higher the baking temperature is, the higher the increase is.









TABLE 2







Effect of baking in nitrogen and air on conductivity


of pH 5.11 ammonium containing PAni/Nafion ®











Electrical conductivity



Baking Conditions
(S/cm)












A)
First baking:
3.61 × 10−5



130° C. for 10 minutes




in air




Second baking:
1.49 × 10−4



Above plus 200° C. for




40 minutes in nitrogen



B)
First baking:
1.39 × 10−3



200° C. for 10 minutes




in air




Second baking:
1.55 × 10−3



Above plus 200° C. for




40 minutes in nitrogen









Example 4

This example illustrates device performance of the pH 5.0 PAni/Nafion® made in Example 1.


The pH 5.0 PAni/Nafion® made in Example 1 was fabricated into light emitting devices using Lumination Green 1303 as shown below. The PAni/Nafion® was spin-coated on a 6″×6″ glass plate at 2,800 RPM for 8 seconds resulting in a 75 nm thick film. The plate had an ITO thickness of 100 nm to 150 nm and consisted of 16 backlight substrates. Each substrate consisted of 3 pieces of 5 mm×5 mm pixel and 1 piece of 2 mm×2 mm pixel for light emission. The spin-coated films as a buffer layer were then baked on a hot plate in air at 200° C. for 10 minutes. For the light-emitting layer, a 1% (w/v) p-xylene solution of a green polyfluorene light-emitting polymer was spin-coated on top of the buffer layer films and subsequently baked at 130° C. for 10 minutes on a hot plate in an inert atmosphere dry box. The thickness of the baked films was 75 nm. A cathode consisting of 3 nm of Ba and 260 nm of Al was thermally evaporated at pressure less then 4×10−6 Torr. Encapsulation of the devices was achieved by bonding a glass slide on the back of the devices using an UV-curable epoxy resin. Table 1 summarizes light emitting device efficiency 200, 500, 1,000 and 2,000 nits (Cd/m2) and luminance half-life (T50) at 4,800 nits initial luminance. The data shows that pH 5.0 PAni/Nafion® layer has high efficiency and lifetime. This device performance is attributed to high temperature baking, which has led to enhancement of electrical conductivity.









TABLE 3







Lumination ® Green 1303 Device performance


using pH 5.0 PAni/Nafion ®









Baking
Efficiency(Cd/A)
T-50 (hr)












Tempera-
@200
@500
@1,000
@2,000
@ RT &


ture
nits
nits
nits
nits
30 mA/cm2





200° C.
17.2 ± 0.2
17.4 ± 0.2
17.4 ± 0.2
17.1 ± 0.2
591









Example 5

This example illustrates synthesis of PAni/Nafion®, a poly(tetrafluoroethylene)/perfluoroethersulfonic acid, various cation compositions, and effect of baking on electrical conductivity.


In this example, n-propanol was not added to the polymerization. Nafion® dispersion used in this example was prepared in the same manner as described in Example 1.


In a 500 mL reaction kettle were put 96.4 g of 12% solid content aqueous Nafion® dispersion (11.57 mmol SO3H groups), 103 g water. The diluted Nafion® was stirred at 300 RPM using an overhead stirrer fitted with a double stage propeller blade. To the diluted Nafion® dispersion, 1.21 g (5.09 mmol) sodium persulfate (Na2S2O8) dissolved in 15 mL water, and 422 μL (4.63 mmol) aniline dissolved in 266 μL (9.28 mmol) HCl and 20 mL water were added rapidly. The polymerization liquid turned opaque and very viscous, but there was no visible color change in 5 minutes. ˜20 mg of ferric sulfate were added, but there was no visible change. However, the polymerization liquid started to turn bluish after 30 minutes and changed to green color thereafter. After about 8 hrs, 25 g of each Dowex™ M31, and Dowex™ M43 ion exchange resins, and 100 g deionized water were added to the polymerization mixture. The mixture was stirred overnight and then filtered with a filter paper. The filtrate was added with 100 g deionized water to reduce the viscosity. The filtrates were divided into five equal portions.


The first portion was kept as-is without addition of a base. This portion was determined to have pH of 2, and contain 2.88% (w/w) PAni/Nafion®. Ion chromatography analysis shows that the dispersion contains 15.9×10−6 g NH4+, and 24.1×10−6 g Na+ per one gram of the dispersion. Total ion concentration of the two cations is approximately equivalent to less than 0.69×10−4 mole of NH4+ and Na+ per one gram of PAni/Nafion®.


The second portion of pH 2 PAni/Nafion® was added with 0.1M ammonium solution to pH 5.0. This portion of NH4+ containing dispersion was determined to contain 2.88% (w/w) PAni/Nafion®. Ion chromatography analysis shows that the dispersion contains 372×10−6 g NH4+ per one gram of the dispersion. The NH4+ ion concentration is approximately equivalent to 6.8×10−4 mole of NH4+ per one gram of PAni/Nafion®.


The third portion of pH 2 PAni/Nafion® was added with 0.1M NaOH water solution to pH 5.0. This portion of Na+ containing dispersion was determined to contain 2.89% (w/w) PAni/Nafion®. Ion chromatography analysis shows that the dispersion contains 476.7×10−6 g Na+ per one gram of the dispersion. The Na+ ion concentration is approximately equivalent to 7.2×10−4 mole of Na+ per one gram of PAni/Nafion®.


The fourth portion of pH 2 PAni/Nafion® was added with 0.1M KOH water solution to pH 5.0. This portion of K+ containing dispersion was determined to contain 2.72% (w/w) PAni/Nafion®. Ion chromatography analysis shows that the dispersion contains 839×10−6 g K+ per one gram of the dispersion. The K+ ion concentration is approximately equivalent to 7.9×10−4 mole of K+ per one gram of PAni/Nafion®.


The fifth portion of pH 2 PAni/Nafion® was added with 0.1M Cs (cesium) OH water solution to pH 5.0. This portion of Cs+ containing dispersion was determined to contain 2.91% (w/w) PAni/Nafion®. Cs+ ion concentration was not determined, but it should be approximately in the range of ˜7×10−4 mole of K+ per one gram of PAni/Nafion®.


The conductivity data shows that PAni/Nafion® adjusted to high pH with NH+, Na+, K+, and Cs+ shows enhanced conductivity upon baking at high temperature.









TABLE 4







Effect of pH and baking (in nitrogen)


temperature on Electrical Conductivity











Electrical conductivity (S/cm)












130° C. for 10
200° C. for 10



Dispersion cation
minutes in air
minutes in argon







H+
1.2 × 10−8
1.6 × 10−7



NH4+
1.5 × 10−8
1.2 × 10−7



Na+
3.8 × 10−8
2.3 × 10−7



K+
3.8 × 10−8
1.1 × 10−5



Cs+
3.4 × 10−8
1.0 × 10−5










Note that not all of the activities described above in the general description or the examples are required, that a portion of a specific activity may not be required, and that one or more further activities may be performed in addition to those described. Still further, the order in which activities are listed is not necessarily the order in which they are performed.


In the foregoing specification, the concepts have been described with reference to specific embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the invention as set forth in the claims below. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of invention.


Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any feature(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature of any or all the claims.


It is to be appreciated that certain features are, for clarity, described herein in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features that are, for brevity, described in the context of a single embodiment, may also be provided separately or in any subcombination. Further, reference to values stated in ranges include each and every value within that range.


In some embodiments, the invention herein can be construed as excluding any element or process step that does not materially affect the basic and novel characteristics of the composition or process. Additionally, in some embodiments, the invention can be construed as excluding any element or process step not specified herein.


The use of numerical values in the various ranges specified herein is stated as approximations as though the minimum and maximum values within the stated ranges were both being preceded by the word “about.” In this manner slight variations above and below the stated ranges can be used to achieve substantially the same results as values within the ranges. Also, the disclosure of these ranges is intended as a continuous range including every value between the minimum and maximum average values including fractional values that can result when some of components of one value are mixed with those of different value. Moreover, when broader and narrower ranges are disclosed, it is within the contemplation of this invention to match a minimum value from one range with a maximum value from another range and vice versa.

Claims
  • 1. An electrically conductive film made from an aqueous dispersion comprising polyaniline, at least one fluorinated polymeric acid selected from the group consisting of perfluorosulfonic acids and perfluoroalkylenesulfonimides, and a cation solution composition, wherein the film is heat treated with at least a first baking at a temperature of at least 130° C. and a second baking treatment in a nitrogen at a temperature of at least 200° C.
RELATED APPLICATION DATA

This application claims priority under 35 U.S.C. 119(e) from U.S. Provisional Application No. 60/877,694 filed on Dec. 28, 2006, which is incorporated by reference herein in its entirety.

US Referenced Citations (77)
Number Name Date Kind
3282875 James Nov 1966 A
4358545 Ezzell et al. Nov 1982 A
4433082 Grot Feb 1984 A
4552927 Warren Nov 1985 A
4731408 Jasne Mar 1988 A
4869979 Ohtani et al. Sep 1989 A
4889659 Genies Dec 1989 A
4933106 Sakai et al. Jun 1990 A
4940525 Ezzell Jul 1990 A
4959430 Jonas et al. Sep 1990 A
4973391 Madou et al. Nov 1990 A
5002700 Otagawa et al. Mar 1991 A
5035926 Jonas et al. Jul 1991 A
5185100 Han et al. Feb 1993 A
5247190 Friend et al. Sep 1993 A
5286413 Hannecart Feb 1994 A
5294504 Otagawa et al. Mar 1994 A
5300575 Jonas Apr 1994 A
5312681 Muys May 1994 A
5317169 Nakano et al. May 1994 A
5354613 Quintens et al. Oct 1994 A
5370981 Krafft et al. Dec 1994 A
5372924 Quintens et al. Dec 1994 A
5378402 Cross et al. Jan 1995 A
5489400 Liu et al. Feb 1996 A
5567356 Kinlen Oct 1996 A
5578249 Ohtani et al. Nov 1996 A
5585038 Kirmanen et al. Dec 1996 A
5705888 Staring et al. Jan 1998 A
5716550 Gardner et al. Feb 1998 A
5766515 Jonas et al. Jun 1998 A
5863465 Kinlen Jan 1999 A
5910385 Gardner et al. Jun 1999 A
5917279 Elschner et al. Jun 1999 A
5986400 Staring et al. Nov 1999 A
5994496 Van Haare et al. Nov 1999 A
6004483 Jonas et al. Dec 1999 A
6083635 Jonas et al. Jul 2000 A
6150426 Curtin et al. Nov 2000 A
6197418 Cloots et al. Mar 2001 B1
6225040 Muys et al. May 2001 B1
6303943 Yu et al. Oct 2001 B1
6340496 Cloots et al. Jan 2002 B1
6358437 Jonas Mar 2002 B1
6376105 Jonas et al. Apr 2002 B1
6391481 Jonas et al. May 2002 B1
6452711 Heuer Sep 2002 B1
6515314 Duggal et al. Feb 2003 B1
6611096 McCormick et al. Aug 2003 B1
6632472 Louwet Oct 2003 B2
6756474 Hsu Jun 2004 B2
7071289 Sotzing Jul 2006 B2
7166010 Lamansky et al. Jan 2007 B2
7317047 Hsu Jan 2008 B2
7351358 Hsu et al. Apr 2008 B2
7371336 Hsu et al. May 2008 B2
7390438 Hsu et al. Jun 2008 B2
7431866 Hsu et al. Oct 2008 B2
7462298 Hsu et al. Dec 2008 B2
20010019782 Igarashi et al. Sep 2001 A1
20020038999 Cao Apr 2002 A1
20020041151 Park Apr 2002 A1
20020098377 Cao et al. Jul 2002 A1
20020127381 Will et al. Sep 2002 A1
20020136923 Jonas et al. Sep 2002 A1
20040010115 Sotzing Jan 2004 A1
20040072987 Groenendaal et al. Apr 2004 A1
20040092700 Hsu May 2004 A1
20040102577 Hsu et al. May 2004 A1
20040124504 Hsu Jul 2004 A1
20040127637 Hsu et al. Jul 2004 A1
20040181011 Korzhenko et al. Sep 2004 A1
20040222413 Hsu et al. Nov 2004 A1
20040254297 Hsu et al. Dec 2004 A1
20040262599 Bernds Dec 2004 A1
20050222333 Hsu Oct 2005 A1
20080210910 Hsu et al. Sep 2008 A1
Foreign Referenced Citations (85)
Number Date Country
1274869 Nov 2000 CN
1276388 Dec 2000 CN
2029556 Dec 1971 DE
3938094 May 1991 DE
4211459 Oct 1993 DE
4334390 Apr 1995 DE
560721 Sep 1993 EP
440957 Mar 1996 EP
488321 Oct 1997 EP
593111 Jun 1998 EP
1079397 Feb 2001 EP
1227529 Jul 2002 EP
1231251 Aug 2002 EP
1054414 Mar 2003 EP
1061530 Mar 2003 EP
962943 Dec 2003 EP
1384739 Jan 2004 EP
1026152 Jul 2006 EP
1191614 May 2009 EP
1191612 Sep 2009 EP
2632979 Dec 1989 FR
2124635 Feb 1984 GB
62138582 Jun 1987 JP
62164717 Jul 1987 JP
63135453 Jun 1988 JP
63215772 Sep 1988 JP
02160823 Jun 1990 JP
02209931 Aug 1990 JP
04234453 Aug 1992 JP
05255576 Oct 1993 JP
06264024 Sep 1994 JP
06306280 Nov 1994 JP
06313038 Nov 1994 JP
07010973 Jan 1995 JP
07090060 Apr 1995 JP
07165892 Jun 1995 JP
08048858 Feb 1996 JP
09176310 Jul 1997 JP
10261418 Sep 1998 JP
10509751 Sep 1998 JP
11353934 Dec 1999 JP
2000091081 Mar 2000 JP
2000505249 Apr 2000 JP
2000336154 Dec 2000 JP
2001035276 Feb 2001 JP
2001270999 Oct 2001 JP
2001325831 Nov 2001 JP
2002500408 Jan 2002 JP
2002246177 Aug 2002 JP
2003261749 Sep 2003 JP
2003297582 Oct 2003 JP
2003301116 Oct 2003 JP
2004502004 Jan 2004 JP
2004107552 Apr 2004 JP
2004231939 Aug 2004 JP
2004523623 Aug 2004 JP
2004532307 Oct 2004 JP
2005108504 Apr 2005 JP
2005120363 May 2005 JP
2005536595 Dec 2005 JP
2006500461 Jan 2006 JP
2006500463 Jan 2006 JP
2006502254 Jan 2006 JP
2009270117 Nov 2009 JP
2035803 May 1995 RU
9934371 Jul 1999 WO
0138219 May 2001 WO
0199207 Dec 2001 WO
0202714 Jan 2002 WO
0215645 Feb 2002 WO
02065484 Aug 2002 WO
02080627 Oct 2002 WO
2002079316 Oct 2002 WO
02099907 Dec 2002 WO
03006537 Jan 2003 WO
03012908 Feb 2003 WO
03048228 Jun 2003 WO
03050824 Jun 2003 WO
03074601 Sep 2003 WO
2004018544 Mar 2004 WO
2004020444 Mar 2004 WO
2004029133 Apr 2004 WO
2004029176 Apr 2004 WO
2004094501 Nov 2004 WO
2004106404 Dec 2004 WO
Related Publications (1)
Number Date Country
20080210909 A1 Sep 2008 US
Provisional Applications (1)
Number Date Country
60877694 Dec 2006 US