Claims
- 1. A conductive film prepared by forming a prime-coating layer of a three-dimensional polymeric network structure on a base and by applying a semiconductive compound-containing solution onto the prime-coating layer to form a conductive layer, wherein the prime-coating layer is one of which degree of swelling T.sub.1 /T.sub.0 is within the range of 1.05 to 2.5, wherein T.sub.0 is the thickness of resin before immersion and T.sub.1 is the thickness of resin after immersion into the solvent of the semiconductive compound solution for five minutes.
- 2. The conductive film as claimed in claim 1, wherein the base is selected from the groups consisting of polyesters, polyolefins, celluloses, polymethyl methacrylates, polyamides, polyimides, polycarbonates, polyvinyl alcohols, vinyl chloride-vinyl acetate copolymers, glass and papers coated with polyolefins or polyesters.
- 3. The conductive film as claimed in claim 1, wherein the prime-coating layer is one which does not substantially dissolve in a solvent of the semiconductive compound-containing solution, although it swells during application of the solution.
- 4. The conductive film as claimed in claim 1, wherein the prime-coating layer is one of which degree of swelling T.sub.1 /T.sub.0 is within the range of 1.05 to 1.7, wherein T.sub.0 is the thickness of resin before immersion, T.sub.1 is the thickness of resin after immersion into the solvent of the semiconductive compound solution for five minutes.
- 5. The conductive film as claimed in claim 1, wherein the thickness of the prime-coating layer is in the range of 0.01 to 100 .mu.m.
- 6. The conductive film as claimed in claim 1, wherein the semiconductive compound is present in the prime-coating layer near an opposite surface of a base at the highest concentration to form the conductive layer.
- 7. The conductive film as claimed in claim 1, wherein the amount of semiconductive compound applied is 40 to 2000 mg/m.sup.2.
- 8. The conductive film as claimed in claim 1, wherein the semiconductive compound is selected from the group consisting of cuprous halide; silver halide; halides of bismuth, gold, indium, iridium, lead, nickel, palladium, rhenium, tin, tellurium and tungsten; cuprous thiocyanate, copper thiocyanate and silver thiocyanate; and mercury iodide.
- 9. The conductive film as claimed in claim 1, wherein the semiconductive compound is selected from the group consisting of cuprous iodide and silver iodide.
Priority Claims (4)
Number |
Date |
Country |
Kind |
62-227144 |
Sep 1987 |
JPX |
|
62-304090 |
Dec 1987 |
JPX |
|
62-304091 |
Dec 1987 |
JPX |
|
62-304092 |
Dec 1987 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 07/242,465 filed Sept. 9, 1988, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3501301 |
Nadeau et al. |
Mar 1970 |
|
3597272 |
Gramza et al. |
Aug 1971 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
242465 |
Sep 1988 |
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