(a) Field of the Invention
The invention relates to a process variation monitoring circuit, particularly to a configurable process variation monitoring circuit of die and the monitoring method thereof.
(b) Description of the Related Art
As the CMOS (complementary metal oxide semiconductor) process keeps advancing to the nanometer era, the influence of process variation on product becomes greater and thus increases difficulty in yield ramp-up. Traditionally, the low yield problem is diagnosed by using a defect diagnosis tool which generally focuses on finding defect locations based on a static fault model. However, a static fault model used in diagnosis cannot precisely simulate the effect caused by the process variation.
A method to obtain process information is to dispose a test key in scribe lines of a wafer implemented by the wafer foundry to collect process related information, but the number of test keys disposed in a wafer is limited due to area cost concerns. Besides, the layout pattern around a test key is quite different from that around functional logics. That means the layout dependent process variation cannot be observed using a wafer test key. Further these test keys cannot be preserved after wafer dicing. To promote the subsequent diagnostic or debugging capability for effectively improving the product yield, more process information is required to acquire through other methods.
Another method is to use monitoring circuits built in a chip but these circuits are generally designed as analog circuits in order to have high accuracy. The configuration of an analog circuit is different from that of a digital circuit. Because of custom design, an analog circuit can tolerate larger process variation. Thus the influence of process variation on the digital circuit cannot be clearly reflected.
After a wafer is back to a factory, generally the wafer should be analyzed on its yield to find out the current process condition. A common analysis method is to use a wafer map to understand process status and such a method needs to measure each test key but the test machine is very expensive during the CP/FT mass production testing phase. The testing time of this method is long and thus the testing cost is very expensive.
Current methods for collecting process information require measurement equipment or testing machines to measure signal parameters. Thus, not only is high-end measurement equipment required, but the equipment itself may introduce an error. Besides, the size of IC elements decreases with the advance of processes and the speed also increases at the same time. At the time, the delay caused by metal wires is relatively apparent. Therefore, the influence of the variation of metal wires on the circuit speed becomes non-negligible but the current method cannot measure the variation of metal wires resulting in the problem of poor diagnosis.
One object of the invention is to provide a configurable process variation monitoring circuit of a die.
One object of the invention is to provide configurable monitoring method for detecting process variation effects on a die.
According to the invention, a configurable process variation monitoring circuit of die comprises a ring oscillator, a frequency divider and a frequency detector. The ring oscillator comprises a plurality of first standard cells, a plurality of second standard cells and a plurality of multiplexers and generates an oscillation signal in a first mode or a second mode according to a selection signal. The frequency divider is coupled to the ring oscillator and divides the oscillation signal by a divisor value to generate a divided signal. The frequency detector is coupled to the frequency divider and counts periods of the divided signal by a base clock to generate an output counting value. The output counting value is related to process variation of the die.
According to the invention, a configurable process variation monitoring method of a die comprises the following steps: switching a ring oscillator to generate an oscillation signal in a first mode or a second mode according to a selection signal; dividing the oscillation signal by a divisor value to generate a divided signal; and counting periods of the divided signal by a base clock to generate an output counting value; wherein the ring oscillator comprises a plurality of first standard cells, a plurality of second standard cells and a plurality of multiplexers and the output counting value is related to process variation of the die.
Other objects and advantages of the invention can be better understood from the technical characteristics disclosed by the invention. In order to clarify the above mentioned and other objects and advantages of the invention, examples accompanying with figures are provided and described in details in the following.
The invention provides a configurable process variation monitoring circuit of a die and a monitoring method thereof to show the whole process variation carried by the monitoring circuit for subsequent diagnosis monitoring circuit completely by digital circuit design. By configurable setting, the time requirement of mass production testing can be matched, dies with bad quality or being greatly negatively influenced by processes can be quickly sorted out, and distinguishability can be maintained in a high state.
For example, in the single-cell type mode, the first path RO1, the second path RO2, the third path RO3 or the fourth path RO4 is enabled and the oscillation clock ro_clock, that is, oscillation signal SF in
The oscillation signal SF and its counting value generated in a different mode can be used differently. For example, in the single-cell type mode, the counting value includes simpler process variation. The counting value generated via the first path RO1 is only related to the process variation related to NAND gates. Thus, according to the information of NAND gates provided by a standard cell library, for example, the delay caused by each NAND gate, the divisor value for the frequency divider 104 can be properly set, accordingly. The counting value generated by the frequency detector 106 can be compared with an expected result and the degree of delay shown by the counting value can be determined whether or not to be within a tolerable range. Therefore, the information of process variation in the same process for different standard cells can be provided. During debugging or diagnosis, detailed information can be provided. For example, during diagnosis, generally more time is taken to do measurement and distinguishable information is required to determine whether the low yield problem comes from the process, circuit design or design process defect. Therefore, during diagnosis, the process variation monitoring circuit of
This embodiment designs the first path RO1 and the third path RO3 to use the same standard cells and thus the output counting values from the first path RO1 and the third path RO3 can be compared against each other to collect the information related to process stability. The output counting value generated in the mixed-cell type mode has a property of mixing various types of standard cells and this cannot provide detailed process variation but in this mode the oscillation signal including different standard cell properties can be generated fast. Therefore, the mixed-cell type mode is suitable to the situation under time pressure. For example, a mass production testing phase requires quickly grading chips to have a standard for chip sorting.
In another embodiment, the single-cell type mode can arrange a preset order for selecting paths to output oscillation clock and repeat to operate the selection as a cycle. For example, firstly the first path RO1 outputs the oscillation clock ro_clock, then the third path RO3 outputs the oscillation clock ro_clock, and then the second path RO2 outputs the oscillation clock ro_clock, etc. The mixed-cell type mode can also include various types. For example, only the first path RO1 and the second path RO2 output the oscillation clock ro_clock.
The inherent characteristic information of standard cells such as timing, power, delay, noise, etc., can be found from the standard cell library provided by the wafer foundry. Therefore, according to the selected path and the standard cell library, the input command prog_code determines the divisor value for the frequency divider 104 to divide the oscillation signal SF so that the clock signal dss_clk can correctly count periods of the divided signal SD to generate good resolution.
When the multiplexer enabling signal wsort_en=1′b1, the signal transmission path passes through four oscillation paths to generate the oscillation signal ro_clock in the mixed-cell type mode. Therefore, delay caused by different cells affects the final result and the speed of the tested chip can be quickly determined to reach the standard or not.
The process variation monitoring circuit according to the invention can be disposed in different areas of the chip to acquire the information of intra-die process variation and also be disposed in different chips of the same wafer to acquire the information of inter-die process variation. Furthermore, the process variation monitoring circuit according to the invention can be disposed in the same area of different wafers to acquire the information of cross-wafer process variation. The variation of the location of the process variation monitoring circuit and the information collected by the output values can be expected. Various modifications or changes can be made by those who are skilled in the art without deviating from the spirit of the invention. Any embodiment or claim of the present invention does not need to reach all the disclosed objects, advantages, and uniqueness of the invention. Besides, the abstract and the title are only used for assisting the search of the patent documentation and should not be construed as any limitation on the implementation range of the invention. Although the present invention has been fully described by the above embodiments, the embodiments should not constitute the limitation of the scope of the invention.
Number | Date | Country | Kind |
---|---|---|---|
100114380 | Apr 2011 | TW | national |