Conformal Heteroepitaxy of GaAs and InP on Silicon and Sapphire Substrates

Information

• NSF Award
• 9060697

Owner

• AstroPower, Inc.

• Award Id

  9060697

• Award Effective Date

  1/1/1991 - 34 years ago

• Award Expiration Date

  9/30/1991 - 33 years ago

• Award Amount

  $ 50,000.00

• Award Instrument

  Standard Grant

Conformal Vapor Phase Epitaxy (CVPE) is a new technique for two-dimensional constrained growth of thin semiconductor films using a halide vapor transport process. This technique will be applied to the growth of GaAs and InP films on silicon and sapphire substrates. Epitaxial-lateral overgrowth with high aspect ratios is achieved by confining growth to a thin void space bounded by an oxide-mask coating the substrate and an adjacent overhanging mask. This technique has excellent potential for reducing the detrimental effects of lattice-mismatch and thermal stress to yield low-defect heteroepitaxial films. The feasibility of CVPE for GaAs-on-silicon, GaAs-on-sapphire, InP-on-silicon, and InP-on- sapphire will be studied with experimental emphasis on GaAs-on-silicon. Heteroepitaxial materials will be characterized and minority carrier devices, such as photodetectors and LEDs, fabricated with the heteroepitaxial films, will be evaluated.

• Program Officer

  Ritchie B. Coryell

• Min Amd Letter Date

  12/6/1990 - 34 years ago

• Max Amd Letter Date

  12/6/1990 - 34 years ago

• ARRA Amount

• Name

  AstroPower, Incorporated

• City

  Newark

• State

  DE

• Country

  United States

• Address

  Solar Park

• Postal Code

  197162000

• Phone Number

  3023660400

• First Name

  Michael

• Last Name

  Mauk

• Email Address

  mauk@astropower.com

• Start Date

  1/1/1991 12:00:00 AM

• Name

  Engineering-Electrical

• Code

  55