Patent Grant
6967856
The present invention relates to integrated circuit memory devices and methods of operating same, and more particularly to content addressable memory devices and methods of operating same.
In many memory devices, including random access memory (RAM) devices, data is typically accessed by supplying an address to an array of memory cells and then reading data from the memory cells that reside at the supplied address. However, in content addressable memory (CAM) devices, data is not accessed by initially supplying an address, but rather by initially applying data (e.g., search words) to the device and then performing a search operation to identify one or more entries within the CAM device that contain data equivalent to the applied data and thereby represent a “match” condition. In this manner, data is accessed according to its content rather than its address. Upon completion of the search operation, the identified location(s) containing the equivalent data is typically encoded to provide an address (e.g., CAM array block address+row address within a block) at which the matching entry is located. If multiple matching entries are identified in response to the search operation, then local priority encoding operations may be performed to identify a location of a best or highest priority matching entry. Such priority encoding operations frequently utilize the relative physical locations of multiple matching entries within the CAM device to identify a highest priority matching entry. An exemplary CAM device that utilizes a priority encoder to identify a highest priority matching entry is disclosed in commonly assigned U.S. Pat. No. 6,370,613 to Diede et al., entitled “Content Addressable Memory with Longest Match Detect,” the disclosure of which is hereby incorporated herein by reference. The '613 patent also discloses the use of CAM sub-arrays to facilitate pipelined search operations. Additional CAM devices are described in U.S. Pat. Nos. 5,706,224, 5,852,569 and 5,964,857 to Srinivasan et al. and in U.S. Pat. Nos. 6,101,116, 6,256,216, 6,128,207 and 6,262,907 to Lien et al., the disclosures of which are hereby incorporated herein by reference.
CAM cells are frequently configured as binary CAM cells that store only data bits (as “1” or “0” logic values) or as ternary CAM cells that store data bits and mask bits. As will be understood by those skilled in the art, when a mask bit within a ternary CAM cell is inactive (e.g., set to a logic 1 value), the ternary CAM cell may operate as a conventional binary CAM cell storing an “unmasked” data bit. When the mask bit is active (e.g., set to a logic 0 value), the ternary CAM cell is treated as storing a “don't care” (X) value, which means that all compare operations performed on the actively masked ternary CAM cell will result in a cell match condition. Thus, if a logic 0 data bit is applied to a ternary CAM cell storing an active mask bit and a logic 1 data bit, the compare operation will indicate a cell match condition. A cell match condition will also be indicated if a logic 1 data bit is applied to a ternary CAM cell storing an active mask bit and a logic 0 data bit. Accordingly, if a data word of length N, where N is an integer, is applied to a ternary CAM array block having a plurality of entries therein of logical width N, then a compare operation will yield one or more match conditions whenever all the unmasked data bits of an entry in the ternary CAM array block are identical to the corresponding data bits of the applied search word. This means that if the applied search word equals {1011}, the following entries will result in a match condition in a CAM comprising ternary CAM cells: {1011}, {X011}, {1X11}, {10X1}, {101X}, {XX11}, {1XX1}, . . . , {1XXX}, {XXXX}.
Conventional techniques to reduce power consumption within CAM devices are disclosed in U.S. Pat. Nos. 6,191,969 and 6,191,970 to Pereira. In particular, the '969 patent discloses a CAM array having CAM cells therein that include a discharge circuit connected between each cell and a fixed ground potential. Each of the discharge circuits includes a control terminal coupled to receive a control signal indicative of the logical state of a match line segment in a respective row. These discharge circuits may be turned off to prevent discharge of respective match line segments during a search operation. U.S. Pat. No. 6,243,280 to Wong et al. also discloses a technique to selectively precharge match line segments during a search operation. However, the match line precharge circuit described in the '280 patent may suffer from relatively poor speed performance during a search operation. This poor speed performance may result whenever a wider timing margin is used in each stage of a search operation to account for worst case timing conditions. These worst case timing conditions can occur when only one CAM cell within a segment of CAM cells indicates a “miss” condition while all other CAM cells in the same segment indicate “match” conditions. Thus, in the '280 patent, the timing margin associated with each stage of a search operation should be sufficient to account for the presence of a “worst case” miss signal before a decision can be made on whether to precharge a match line segment associated with a next segment of CAM cells. U.S. Pat. No. 6,430,074 to Srinivasan discloses a precharge circuit that uses selective look-ahead match line precharging techniques. The following patents also disclose subject matter relating to match line precharging: U.S. Pat. Nos. 6,101,115; 6,125,049; 6,147,891; 6,166,939; 6,240,001; 6,262,929 and 6,343,029.
U.S. Pat. No. 5,517,441 to Dietz et al. discloses the use of inverters and pull-down transistors to pass match line signals from one match line segment to another match line segment during a search operation. U.S. Pat. Nos. 5,446,685 and 5,598,115 to Holst also disclose the use of rail-to-rail (i.e., Vdd-to-Vss) pulsed ground signals during search operations. These pulsed ground signals may facilitate selective match line discharge operations.
A conventional match line signal repeater is illustrated by
Content addressable memories may also be designed to provide inter-row configurability that enables short word search operations (e.g., x72) and long word search operations (e.g., x144, x288, etc.) to be performed. In particular, FIG. 1 of U.S. Pat. No. 6,252,789 to Pereira et al. illustrates CAM arrays having width expansion logic (WEL) circuits that support long word search operations. The '789 patent describes a long word as a data word chain having a first data word (FW) and a last word (LW) and possibly one or more continuing data words (CW). Each WEL circuit is illustrated as include a match carry input (MCI) and a match carry output (MCO), which are configured to support the passing of match carry signals from one row of a CAM array to a next row of a CAM array during consecutive search operations. CAM cells are also used for storing control bits, including a start bit (ST) and an end bit (END). The start bit indicates that the corresponding data word is the first word in a data word chain and the end bit indicates that the data word is the last word in the data word chain.
Notwithstanding these conventional techniques to improve match line signal speed and reduce match line power consumption in segmented CAM arrays, there continues to be a need for additional techniques to further reduce power consumption and achieve high speed operation of CAM arrays having segmented match lines.
Embodiments of the present invention include CAM devices that utilize advanced timing and power saving techniques to support high frequency search operations within large capacity CAM arrays. In some embodiments, segmented CAM arrays are provided with low power match line signal repeaters that support high speed pipelined search operations in an efficient manner. An exemplary match line signal repeater includes a dual-capture match line signal repeater that extends between xR and xS segments of CAM cells within a respective row, where R and S are positive integers. This repeater provides high speed operation by quickly accessing the state (match or miss) of a match line segment when a corresponding segment of CAM cells connected to the match line segment undergoes a respective stage of a pipelined search operation. If the match line segment is initially assessed as having a match signal thereon, then that match signal is passed to a next match line segment within the same row and a next stage search operation is commenced. However, if the match line segment is erroneously assessed as having a match signal thereon, when a miss condition was actually present in the corresponding segment of CAM cells, then the signal repeater will operate to capture a late miss signal and pass that late miss signal to the next higher match line segment, and thereby correct the error.
In particular, a dual-capture match line signal repeater may be configured to: (i) transfer a “early” match signal from a xR match line segment to a next higher xS match line segment during an early capture time interval; and then (ii) transfer the “late” miss signal, if present, from the xR match line segment to the xS match line segment during a late capture time interval that terminates after termination of the early capture time interval. In this manner, an early assessment of a match condition can be made in order to shorten the per-stage search cycle time. However, if the early assessment is erroneous because a worst case miss condition was actually present (resulting in a weak miss signal that is represented by a relatively gradual high-to-low transition of the match line), then the erroneous assessment is corrected and provided to the next segment of CAM cells while that next segment is undergoing the next stage of the search operation. However, because such an erroneous assessment is typically rare, the benefit of shorter search latency more than adequately compensates for the infrequent case when match line power is not conserved.
Additional embodiments of the present invention include methods of performing pipelined search operations within a segmented CAM array. These methods may include applying a first segment of a search word to first data lines that are electrically coupled to the first segment of CAM cells during a first stage of the pipelined search operation. Then, after a relatively short evaluation time period has elapsed, an early match signal, if present, is passed from a first match line segment associated with the first segment of CAM cells to a second match line segment associated with a second segment of CAM cells. This passing of the match signal may be performed while second data lines, which are electrically coupled to the second segment of CAM cells, are globally masked. Then, during a second stage of the pipelined search operation, a second segment of the search word is applied to the second data lines and a late miss signal is simultaneously passed from the first match line segment to the second match line segment, to thereby correct for the early passing of an erroneous match signal.
Still further embodiments of the present invention include CAM devices that support long word search operations (e.g., x2N, x4N, x8N, etc., where N is a logical width of a CAM array). These CAM devices include a segmented CAM array that is configured to support a long word search operation as a plurality of overlapping segment-to-segment search operations. Each of these operations is performed across different rows within a group of rows in the CAM array and is staggered in time relative to one another, frequently by one or two search segment time intervals. The control of which rows are searched and which rows are ignored during a segment-to-segment search operation is provided by force-to-miss control signals. These control signals force miss conditions onto match lines associated with rows that are to be ignored during a segment-to-segment search operation. In this manner, the long word search operations may be pipelined in two-dimensions (2D), along a segment-to-segment (i.e., horizontal) search direction and a row-to-row (i.e., vertical) search direction where only selected rows are searched in each segment-to-segment search operation.
These CAM devices may also have high degrees of soft-error immunity. In particular, each CAM entry within a CAM array may have four bits of parity data associated with it that identify the parity of different portions of the entry. Moreover, to make the most of these four bits of parity data in terms of soft error immunity, each row of TCAM cells within a CAM array may be arranged (by column) in a repeating low-even, low-odd, high-even, high-odd sequence, where “low” represents one half of a CAM entry (e.g., bits 0–39) and “high” represents another half of the CAM entry (e.g., bits 40–79).
The present invention now will be described more fully herein with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout and signal lines and signals thereon may be referred to by the same reference characters. Signals may also be synchronized and/or undergo minor boolean operations (e.g., inversion) without being considered different signals. The suffix B (or prefix symbol “/”) to a signal name may also denote a complementary data or information signal or an active low control signal, for example.
Referring now to
The CAM cells in
A dual-capture match line signal repeater is provided between each of the illustrated match line segments. In particular, a first dual-capture match line signal repeater 40ab is provided between the match line segments MLn—a and MLn—b, a second dual-capture match line signal repeater 40bc is provided between match line segments MLn—b and MLn—c, and a third dual-capture match line signal repeater 40cd is provided between match line segments MLn—c and MLn—d.
The first signal repeater 40ab is illustrated as including a first inverter 30a and a second inverter 32b. The first inverter 30a may be defined internally by one PMOS pull-up transistor and one NMOS pull-down transistor. In contrast, the second inverter 32b, which has a tri-state output, includes a pull-up path defined by two PMOS pull-up transistors and a pull-down path defined by two NMOS pull-down transistors. An input of the second inverter 32b is electrically connected to an output of the first inverter 30a by the first complementary match line segment MLBn—a. As illustrated, the uppermost PMOS pull-up transistor PEb within the second inverter 32b has a gate terminal that is responsive to a first evaluation control signal (shown as EV1). The lowermost NMOS pull-down transistor NCb within the second inverter 32b has a gate terminal that is responsive to a first connect control signal (shown as CON1).
The second signal repeater 40bc is illustrated as including a first inverter 30b and a second inverter 32c. The first inverter 30b may be defined internally by one PMOS pull-up transistor and one NMOS pull-down transistor. The second inverter 32c, which has a tri-state output, includes a pull-up path defined by two PMOS pull-up transistors and a pull-down path defined by two NMOS pull-down transistors. An input of the second inverter 32c is electrically connected to an output of the first inverter 30b by the second complementary match line segment MLBn—b. As illustrated, the uppermost PMOS pull-up transistor PEc within the second inverter 32c has a gate terminal that is responsive to a zeroth evaluation control signal (shown as EV0). The lowermost NMOS pull-down transistor NCc within the second inverter 32c has a gate terminal that is responsive to a zeroth connect control signal (shown as CON0). These evaluation and connect control signals may be generated by timing and control circuitry (not shown) that is synchronized to a clock signal (e.g., CLK2X), as illustrated by the timing diagram 50 of
The third signal repeater 40cd is illustrated as including a first inverter 30c and a second inverter 32d. The first inverter 30c may be defined internally by one PMOS pull-up transistor and one NMOS pull-down transistor. The second inverter 32d, which has a tri-state output, includes a pull-up path defined by two PMOS pull-up transistors and a pull-down path defined by two NMOS pull-down transistors. As illustrated, the uppermost PMOS pull-up transistor PEd within the second inverter 32d has a gate terminal that is responsive to the first evaluation control signal (shown as EV1). The lowermost NMOS pull-down transistor NCd within the second inverter 32d has a gate terminal that is responsive to the first connect control signal (shown as CON1).
The first match line segment MLn—a is precharged to a logic 1 voltage (e.g., Vdd) just prior to commencement of a first stage of a pipelined search operation. This precharging operation is performed by PMOS pull-up transistor PUa, which is responsive to the zeroth evaluation control signal EV0. As described more fully hereinbelow with respect to the timing diagram 50 of
A second pair of serially connected PMOS pull-up transistors P1b and P2b are also provided to support any positive voltage on the second match line segment MLn—b, by offsetting leakage current losses that may occur in the second segment of CAM cells 20b. Similarly, a third pair of serially connected PMOS pull-up transistors P1c and P2c are provided to support any positive voltage on the third match line segment MLn—c during search operations. Finally, a fourth pair of serially connected PMOS pull-up transistors P1d and P2d are provided to support any positive voltage on the fourth match line segment MLn—d during search operations. The fourth match line segment MLn—d terminates at an input of a final inverter 30d, which passes a match/miss result to an input of a x80 capture latch 42. As illustrated, the switching of the x80 capture latch 42 is synchronized with a trailing edge of the zeroth connect control signal CON0. The capture latch 42 generates a final active low match line signal MLBn, which may be provided to a priority encoder using conventional techniques.
Operations performed within the segmented row 100 of CAM cells illustrated by
When the zeroth evaluation control signal EV0 switches high-to-low, the first match line segment MLn—a is precharged high to a logic 1 level and the PMOS pull-up transistor PEc within the second inverter 32c is turned on to enable pull-up of the third match line segment MLn—c (when the second complementary match line segment MLBn—b is maintained at a logic 0 level). When the first evaluation control signal EV1 switches high-to-low, the PMOS pull-up transistor PEb within the second inverter 32b is turned on to enable pull-up of the second match line segment MLn—b (when the first complementary match line segment MLBn—a is maintained at a logic 0 level). Switching the first evaluation control signal EV1 high-to-low also causes the PMOS pull-up transistor PEd within the second inverter 32d to turn on and enable pull-up of the fourth match line segment MLn—d (when the third complementary match line segment MLBn—c is maintained at a logic 0 level).
When the zeroth connect control signal CON0 is switched low-to-high, the NMOS pull-down transistor NCc within the second inverter 32c is turned on to enable pull-down of the third match line segment MLn—c (when the second complementary match line segment MLBn—b switches to (or is held at) a logic 1 level). When the first connect control signal CON1 is switched low-to-high, the NMOS pull-down transistor NCb within the second inverter 32b is turned on to enable pull-down of the second match line segment MLn—b (when the first complementary match line segment MLBn—a switches to (or is held at) a logic 1 level). Switching the first connect control signal CON1 low-to-high also causes the NMOS pull-down transistor NCd within the second inverter 32d to turn on and thereby enable pull-down of the fourth match line segment MLn—d (when the third complementary match line segment MLBn—c switches to (or is held at) a logic 1 level). In addition, switching the zeroth connect control signal CON0 high-to-low causes the x80 capture latch 42 to capture the signal at the output of the final inverter 30d. This captured signal is reflected as the final match line signal MLBn.
Referring specifically now to the entries within TABLES 1 and 2 and the timing diagram 50 of
When the first segment of WORD1 is applied to the data lines D/DB<0:19>, the first match line segment MLn—a will be pulled low (i.e., discharged) from a precharged high level if one or more miss conditions are present in the first segment of CAM cells 20a. A “worst” case miss condition exists from a timing standpoint when only CAM cell<0> in the leftmost column of the CAM array detects a miss condition and all other CAM cells<1:19> detect a match condition (i.e., hit). In this case, CAM cell<0> will be solely responsible for pulling down the entire first match line segment MLn—a. Similar “worst” case miss conditions may also exist whenever only a single cell miss condition is present in one of the CAM cells<1:19>. When the third segment of WORD 0 is applied to the data lines D/DB<40:59>, the third match line segment MLn—c will be pulled low (or held low) if one or more miss conditions are present in the third segment of CAM cells 20a.
Also during the time interval from 0 T to 0.5 T, the previously applied bits <20:39> of WORD0 remain on the differential data lines (D/DB<20:39>) associated with the second segment of CAM cells 20b and the previously applied bits <60:79> of WORD(−1) remain on the differential data lines (D/DB<60:79>) associated with the fourth segment of CAM cells 20d. In addition, because the first evaluation control signal EV1 is inactive at a logic 1 level and the first connect control signal CON1 is inactive at a logic 0 level during the time interval from 0 T to 0.5 T, the tri-state output of second inverter 32b and the tri-state output of second inverter 32d will be disposed in high impedance states. This will isolate the first match line segment MLn—a from the second match line segment MLn—b (i.e., x20a ML and x20b ML are isolated from each other) and also isolate the third match line segment MLn—c from the fourth match line segment MLn—d (i.e., x20c ML and x20d ML are isolated from each other).
Moreover, because the zeroth connect control signal CON0 switches low-to-high at time 0 T, any miss signal generated on the second match line segment MLn—b (during a prior STAGE 2 of the search operation with respect to WORD0) will be captured as this miss signal passes through the second inverter 32c. In particular, if a miss is present from the prior stage, then the second complementary match line segment MLBn—b will be high and the NMOS pull-down transistor NCc associated with the second inverter 32c will be turned on in response to the low-to-high switching of the zeroth connect control signal CON0. This will cause the output of the second inverter 32c to pull (or hold) the third match line segment MLn—c segment low. In many cases, the third match line segment MLn—c segment will not need to be pulled low if it already was low during an immediately prior stage of a search operation. Thus, switching CON0 low-to-high enables the capture of a late miss signal from the second match line segment MLn—b during STAGE 3 of the search operation with respect to WORD 0. Switching the zeroth connect control signal CON0 low-to-high also operates to capture the output of the final inverter 30d, which represents a x80 match condition with respect to a prior word (WORD(−1)) that has finished a fourth stage of its search.
According to a preferred aspect of the match line signal repeaters, if a high-to-low transition of the second match line segment MLn—b is relatively gradual in response to a respective STAGE 2 of a search operation, then the low-to-high transition of the second complementary match line signal MLBn—b may also be relatively gradual, but nonetheless recognized by the second inverter 32c when the NMOS pull-down transistor NCc turns on in response to the active zeroth connect control signal CON0. As described herein, a match signal represents a logic 1 signal on a match line and a miss signal represents a logic 0 signal on a match line. In contrast, a “late” miss signal can represent either a “strong” miss signal that is captured late (relative to a match signal) or a “weak” miss signal that is captured late. A “weak” miss signal represents a logic 0 signal that was developed slowly on a match line (i.e., the high-to-low transition of the match line is not sufficiently abrupt to classify the transition as a “strong” miss signal having a sharp falling edge).
At the commencement of the time interval from 0.5 T to 1 T, the zeroth connect control signal CON0 switches high-to-low (at time 0.5 T) to thereby turn off NMOS transistor NCc within the second inverter 32c. The first evaluation control signal EV1 also switches high-to-low to thereby turn on PMOS pull-up transistor PEb (within the second inverter 32b) and PMOS pull-up transistor PEd (within the second inverter 32d). This enables the “early” capture and passing of any logic 1 match signal from the first match line segment MLn—a to the second match line MLn—b, while data lines D/DB<20:39> are being globally masked (in preparation for STAGE 2 of the search operation with respect to WORD1). This also enables the “early” capture and passing of any logic 1 match signal from the third match line segment MLn—c to the fourth match line MLn—d, while data lines D/DB<60:79> are being globally masked (in preparation for STAGE 4 of the search operation with respect to WORD0). During this time interval from 0.5 T to 1 T, the second match line segment MLn—b will be isolated from the third match line segment MLn—c (because EV0=1 and CON0=0 and the output of the second inverter 32c is tri-stated), the first segment of WORD1 will remain on data lines D/DB<0:19> and the third segment of WORD0 will remain on data lines D/DB<40:59>.
STAGE 2 of a pipelined search operation with respect to search WORD1 and STAGE 4 of a pipelined search operation with respect to search WORD0 occur during the time interval from 1 T to 2 T. At the time point 1 T, the first evaluation control signal EV1 switches low-to-high and the first connect control signal CON1 switches low-to-high. This enables a late miss signal, if any, to be passed from the first segment of CAM cells 20a to the second segment of CAM cells 20b (i.e., passed through second inverter 32b). This also enables a late miss signal, if any, to be passed from the third segment of CAM cells 20c to the fourth segment of CAM cells 20d (i.e., passed through second inverter 32d). Moreover, because the zeroth evaluation control signal EV0 and the zeroth connect control signal CON0 are held high and low, respectively, during the interval from 1 T to 1.5 T, the second match line segment MLn—b remains isolated from the third match line segment MLn—c.
During the STAGE 2 and STAGE 4 time intervals, bits <20:39> of WORD1 are applied to the 20 pairs of differential data lines (D/DB<10:39>) associated with the second segment of CAM cells 20b and bits <60:79> of WORD0 are simultaneously applied to the 20 pairs of differential data lines (D/DB<60:79>) associated with the fourth segment of CAM cells 20d. This application of data commences two side-by-side partial word search operations. In addition, the first segment of WORD1 (i.e., bits <0:19>) is maintained on the first segment of data lines D/DB<0:19> and the third segment of WORD0 (i.e., bits <40:59>) is maintained on the third segment of data lines D/DB<40:59>.
When the second segment of WORD1 is applied to the data lines D/DB<20:39> during STAGE 2, the second match line segment MLn—b will be pulled high-to-low (i.e., discharged) if STAGE 1 resulted in a match condition and one or more miss conditions are present in the second segment of CAM cells 20b. Alternatively, the second match line segment MLn—b will be pulled high-to-low if STAGE 1 resulted in an early capture of an erroneous match signal during the time interval 0.5 T to 1 T, followed by late capture of a “weak” miss signal during the time interval 1 T to 1.5 T. Finally, the second match line segment MLn—b will remain low during STAGE 2 if it was low at the beginning of STAGE 2 and STAGE 1 did not result in an early capture of a match signal during the time interval 0.5 T to 1 T.
Likewise, when the fourth segment of WORD0 is applied to the data lines D/DB<60:79> during STAGE 4, the fourth match line segment MLn—d will be pulled high-to-low (i.e., discharged) if STAGE 3 resulted in a match condition and one or more miss conditions are present in the fourth segment of CAM cells 20d. Alternatively, the fourth match line segment MLn—d will be pulled high-to-low if STAGE 3 resulted in an early capture of an erroneous match signal during the time interval 0.5 T to 1 T, followed by late capture of a “weak” miss signal during the time interval 1 T to 1.5 T. Finally, the fourth match line segment MLn—d will remain low during STAGE 4 if it was low at the beginning of STAGE 4 and STAGE 3 did not result in an early capture of a match signal during the time interval 0.5 T to 1 T.
Next, at the commencement of the time interval from 1.5 T to 2 T, the first connect control signal CON1 switches high-to-low (at time 1.5 T) to thereby turn off NMOS transistor NCb within the second inverter 32b and NMOS transistor NCd within the second inverter 32d. This operates to isolate the first match line MLn—a from the second match line MLn—b and also isolate the third match line from the fourth match line MLn—d. At time 1.5 T, the zeroth evaluation control signal EV0 switches high-to-low to thereby turn on PMOS pull-up transistor PUa (which precharges the first match line segment MLn—a and prepares it for STAGE 1 of a search operation) and turn on PMOS pull-up transistor PEc (within the second inverter 32c). This turn on of PMOS pull-up transistor PEc enables the “early” capture and passing of any logic 1 match signal from the second match line segment MLn—b to the third match line MLn—c, while data lines D/DB<40:59> are globally masked (in preparation for STAGE 3 of the search operation with respect to WORD1) and the second segment of WORD0 is maintained on the data lines D/DB<20:39>. The fourth segment of WORD0 is also maintained on data lines D/DB<60:79> during the time interval from 1.5 T to 2 T, to thereby support capture of a final match condition with respect to WORD 0 during the next time interval from 2 T to 2.5 T (See, e.g., TABLE 2).
STAGES 3 and 4 of the pipelined search operations with respect to WORD1 are next performed during the time intervals from 2 T–3 T and 3 T–4 T, respectively. These operations repeat the STAGE 3 operations and STAGE 4 operations described above with respect to WORD0. Moreover, during these final stage operations with respect to WORD1, STAGE 1 operations and STAGE 2 operations are performed with respect to a new word, WORD2. Accordingly, as illustrated best by the timing diagram of
The timing diagram of
As illustrated by TABLE 3, each CAM array includes a bit line and data line driver circuit (not shown) that drives the data lines (D/DB<0:79>) with segments of the search words (WORDn) during the pipelined search operations. These data line driving operations are interleaved with global masking operations that may be implemented using a dedicated mask cell sub-array containing global mask cells. An exemplary dedicated mask cell sub-array is more fully described in commonly assigned U.S. application Ser. No. 10/386,400, filed Mar. 11, 2003, the disclosure of which is hereby incorporated herein by reference.
The segmented row 100 of CAM cells illustrated by
Referring now to
The quad group 200 is illustrated as spanning rows 0–3 of a CAM array. Thus, a CAM array having a depth of 1024 rows may include 256 quad groups of rows, with group 0 spanning rows 0–3, group 1 spanning rows 4–7, . . . , and group 255 spanning rows 1020–1023. The rows of CAM cells are illustrated as being segmented into four segments of CAM cells, with interconnecting circuitry therebetween. These segments of CAM cells are illustrated as segments A and B in
Each row of CAM cells is further illustrated as including a match line driver (ML—DR), three match line signal repeaters (ML—REP) and two word line drivers (WL—DR). Exemplary embodiments of the match line signal repeaters, word line drivers and match line drivers are more fully illustrated by
The match line driver ML—DR in row 0 is responsive to an evaluation control signal (shown as EV—a), a force-to-miss control signal (shown as F2M0) and a normal-row-disable signal NRD. The normal-row-disable signal NRD is held at a logic 0 level when the corresponding quad group 200 is active and is held at a logic 1 level when the corresponding quad group is disabled (e.g., permanently replaced by a redundant group of rows). The logic value of signal NRD may be set by a fuse in response to prepackage testing of an integrated circuit chip containing the CAM array. For purposes of discussion herein, the signal NRD will be treated as being held at a logic 0 level (e.g., Vss) at all times. As illustrated by
A first word line driver WL—DR in row 0 has an output that is electrically connected to a first local word line segment WL0—ab, which spans segments A and B of row 0. As illustrated by
The first match line signal repeater ML—REP in row 0 of the quad group 200 has a data input (shown as MLi in
The second match line signal repeater ML—REP in row 0 has a data input that is electrically connected to the second match line segment ML0—b and a data output that is electrically connected to a third match line segment ML0—c. The second match line signal repeater ML—REP is responsive to the bias signal (PBIAS), an evaluation control signal EV—c and a connect control signal CON—bc. During a segment-to-segment search operation across row 0, a high-to-low transition of the evaluation control signal EV—c will operate to pass an early match signal, if any, from the second match line segment ML0—b to the third match line segment ML0—c. Thereafter, when the evaluation control signal EV—c switches low-to-high, a low-to-high transition of the connect control signal CON—bc will operate to pass a late miss signal, if any, from the second match line segment ML0—b to the third match line segment ML0—c.
The third match line signal repeater ML—REP in row 0 has a data input that is electrically connected to the third match line segment ML0—c and a data output that is electrically connected to a fourth match line segment ML0—d. The third match line signal repeater ML—REP is responsive to the bias signal (PBIAS), an evaluation control signal EV—d and a connect control signal CON—cd. During a segment-to-segment search operation across row 0, a high-to-low transition of the evaluation control signal EV—d will operate to pass an early match signal, if any, from the third match line segment ML0—c to the fourth match line segment ML0—d. Thereafter, when the evaluation control signal EV—d switches low-to-high, a low-to-high transition of the connect control signal CON—cd will operate to pass a late miss signal, if any, from the third match line segment ML0—c to the fourth match line segment ML0—d. This fourth match line segment ML0—d corresponds to the fourth match line segment MLn—d illustrated by
The match line driver ML—DR in row 1 is responsive to the evaluation control signal EV—a, a force-to-miss control signal F2M1 and the normal-row-disable signal NRD. The first match line segment ML1—a in row 1 is precharged to Vdd when the evaluation control signal EV—a switches high-to-low to commence a precharge time interval associated with row 1. If applied during a segment-to-segment search of another row (e.g., row 0, row 2 or row 3), a leading edge of the active high force-to-miss control signal F2M1 will operate to discharge the first match line segment ML1—a in row 1 or otherwise hold the first match line segment ML1—a in a discharged state.
A first word line driver WL—DR in row 1 has an output that is electrically connected to a first local word line segment WL1—ab, which spans segments A and B of row 1. This first word line driver WL—DR is responsive to a global word line control signal GWL0, the normal-row-disable signal NRD and a local word line control signal ZS—ab1. The first word line driver WL—DR in row 1 operates to drive the first local word line segment WL1—ab high only when both the global word line control signal GWL0 and the local word line control signal ZS—ab1 are set at active high levels. Thus, an operation to write a segment of data (e.g., a x40 segment) into the CAM cells in segments A and B of row 1 requires that GWL0=ZS—ab1=1. A second word line driver WL—DR in row 1 has an output that is electrically connected to a second local word line segment WL1—cd, which spans segments C and D of row 1. This second word line driver WL—DR is responsive to the global word line control signal GWL0, the normal-row-disable signal NRD and a local word line control signal ZS—cd1. The second word line driver WL—DR in row 1 operates to drive the second local word line segment WL1—cd high only when both the global word line control signal GWL0 and the local word line control signal ZS—cd1 are set at active high levels. Thus, an operation to write data into the CAM cells in segments C and D of row 1 requires that GWL0=ZS—cd1=1.
The first match line signal repeater ML—REP in row 1 of the quad group 200 has a data input that is electrically connected to the first match line segment ML1—a and a data output that is electrically connected to a second match line segment ML1—b. The second match line signal repeater ML—REP in row 1 has a data input that is electrically connected to the second match line segment ML1—b and a data output that is electrically connected to a third match line segment ML1—c. The third match line signal repeater ML—REP in row 1 has a data input that is electrically connected to the third match line segment ML1—c and a data output that is electrically connected to a fourth match line segment ML1—d. These first, second and third match line signal repeaters ML—REP in row 1 operate in similar manner to the corresponding match line signal repeaters ML—REP in row 0.
The match line driver ML—DR in row 2 is responsive to the evaluation control signal EV—a, a force-to-miss control signal F2M2 and the normal-row-disable signal NRD. The first match line segment ML2—a in row 2 is precharged to Vdd when the evaluation control signal EV—a switches high-to-low to commence a precharge time interval associated with row 2. If applied during a segment-to-segment search of another row (e.g., row 0, row 1 or row 3), a leading edge of the active high force-to-miss control signal F2M2 will operate to discharge the first match line segment ML2—a in row 2 or otherwise hold the first match line segment ML2—a in a discharged state.
A first word line driver WL—DR in row 2 has an output that is electrically connected to a first local word line segment WL2—ab, which spans segments A and B of row 2. This first word line driver WL—DR is responsive to a global word line control signal GWL1, the normal-row-disable signal NRD and a local word line control signal ZS—ab0. The first word line driver WL—DR in row 2 operates to drive the first local word line segment WL2—ab high only when both the global word line control signal GWL1 and the local word line control signal ZS—ab0 are set at active high levels. Thus, an operation to write a segment of data (e.g., a x40 segment) into the CAM cells in segments A and B of row 2 requires that GWL1=ZS—ab0=1. A second word line driver WL—DR in row 2 has an output that is electrically connected to a second local word line segment WL2—cd, which spans segments C and D of row 2. This second word line driver WL—DR is responsive to the global word line control signal GWL1, the normal-row-disable signal NRD and a local word line control signal ZS—cd0. The second word line driver WL—DR in row 2 operates to drive the second local word line segment WL2—cd high only when both the first global word line control signal GWL1 and the local word line control signal ZS—cd0 are set at active high levels. Thus, an operation to write data into the CAM cells in segments C and D of row 2 requires that GWL1=ZS—cd0=1.
The first match line signal repeater ML—REP in row 2 of the quad group 200 has a data input that is electrically connected to the first match line segment ML2—a and a data output that is electrically connected to a second match line segment ML2—b. The second match line signal repeater ML—REP in row 2 has a data input that is electrically connected to the second match line segment ML2—b and a data output that is electrically connected to a third match line segment ML2—c. The third match line signal repeater ML—REP in row 2 has a data input that is electrically connected to the third match line segment ML2—c and a data output that is electrically connected to a fourth match line segment ML2—d. These first, second and third match line signal repeaters ML—REP in row 2 operate in similar manner to the corresponding match line signal repeaters ML—REP in row 0.
The match line driver ML—DR in row 3 is responsive to the evaluation control signal EV—a, a force-to-miss control signal F2M3 and the normal-row-disable signal NRD. The first match line segment ML3—a in row 3 is precharged to Vdd when the evaluation control signal EV—a switches high-to-low to commence a precharge time interval associated with row 3. If applied during a segment-to-segment search of another row (e.g, row 0, row 1 or row 2), a leading edge of the active high force-to-miss control signal F2M3 will operate to discharge the first match line segment ML3—a in row 3 or otherwise hold the first match line segment ML3—a in a discharged state.
A first word line driver WL—DR in row 3 has an output that is electrically connected to a first local word line segment WL3—ab, which spans segments A and B of row 3. This first word line driver WL—DR is responsive to a global word line control signal GWL1, the normal-row-disable signal NRD and a local word line control signal ZS—ab1. The first word line driver WL—DR in row 3 operates to drive the first local word line segment WL3—ab high only when both the global word line control signal GWL1 and the local word line control signal ZS—ab1 are set at active high levels. Thus, an operation to write a segment of data (e.g., a x40 segment) into the CAM cells in segments A and B of row 3 requires that GWL1=ZS—ab1=1. A second word line driver WL—DR in row 3 has an output that is electrically connected to a second local word line segment WL3—cd, which spans segments C and D of row 3. This second word line driver WL—DR is responsive to the global word line control signal GWL1, the normal-row-disable signal NRD and a local word line control signal ZS—cd1. The second word line driver WL—DR in row 3 operates to drive the second local word line segment WL3—cd high only when both the first global word line control signal GWL1 and the local word line control signal ZS—cd1 are set at active high levels. Thus, an operation to write data into the CAM cells in segments C and D of row 3 requires that GWL1=ZS—cd1=1.
The first match line signal repeater ML—REP in row 3 of the quad group 200 has a data input that is electrically connected to the first match line segment ML3—a and a data output that is electrically connected to a second match line segment ML3—b. The second match line signal repeater ML—REP in row 3 has a data input that is electrically connected to the second match line segment ML3—b and a data output that is electrically connected to a third match line segment ML3—c. The third match line signal repeater ML—REP in row 3 has a data input that is electrically connected to the third match line segment ML3—c and a data output that is electrically connected to a fourth match line segment ML3—d. These first, second and third match line signal repeaters ML—REP in row 3 operate in similar manner to the corresponding match line signal repeaters ML—REP in row 0.
The quad group 200 of rows in
During a x2N search mode operation, the even rows 0 and 2 within the quad group 200 may be searched in parallel to identify a first match associated with a first half of a x2N search word and then in a staggered sequence the odd rows 1 and 3 may be searched in parallel to identify a second match associated with a second half of the x2N search word. Upon commencement of the parallel search of the first segments A in even rows 0 and 2, the force-to-miss signals F2M<3:0> may be set to equal <1010> to thereby discharge the first match line segments ML1—a and ML3—a associated with rows 1 and 3 of the quad group 200. Likewise, upon commencement of the parallel search of the first segments A in odd rows 1 and 3, the force-to-miss signals F2M<3:0> may be set to equal <0101> to thereby discharge the first match line segments ML0—a and ML2—a associated with rows 0 and 2 of the quad group 200. As described more fully hereinbelow, commencement of a parallel segment-to-segment search of rows 1 and 3 may be staggered in time relative to commencement of a parallel segment-to-segment search of rows 0 and 2. As will be understood by those skilled in the art, the detection of a match condition in row 0 (row 2) and a match condition in row 1 (row 3) may be encoded as a x2N match condition by a priority encoder (not shown) that receives final match line signals MLBn from each CAM row (see,
During a x4N search mode operation, the rows 0–3 within the quad group 200 are searched one-at-a-time in a staggered sequence. Upon commencement of a search of the first segment A in row 0, the force-to-miss signals F2M<3:0> may be set to equal <1110> to thereby discharge the first match line segments ML1—a, ML2—a and ML3—a associated with rows 1–3 of the quad group 200. Likewise, upon commencement of a search of the first segment A in row 1, the force-to-miss signals F2M<3:0> may be set to equal <1101> to thereby discharge the first match line segments ML0—a, ML2—a and ML3—a associated with rows 0 and 2–3 of the quad group 200. Next, upon commencement of a search of the first segment A in row 2, the force-to-miss signals F2M<3:0> may be set to equal <1011> to thereby discharge the first match line segments ML0—a, ML1—a and ML3—a associated with rows 0–1 and 3 of the quad group 200. Finally, upon commencement of a search of the first segment A in row 3, the force-to-miss signals F2M<3:0> may be set to equal <0111> to thereby discharge the first match line segments ML0—a, ML1—a and ML2—a associated with rows 0–2 of the quad group 200.
The above described xN, x2N and x4N search modes that may be performed in the quad group 200, can be expanded to include xN, x2N, x4N and x8N search modes in the event a pair of CAM arrays (e.g., mirror-image CAM arrays) are configured to share a common priority encoder (not shown), which may be located in spine region extending between two adjacent CAM arrays (e.g., left-side and right-side CAM arrays). Thus, the illustrated quad group 200 may be combined within a mirror-image quad group in order to support a greater range of search word lengths (e.g., x80, x160, x320 and x640).
The match line driver circuits ML—DR′ of
In
When the evaluation control signal EV—b switches high-to-low at t=7 ns, operations are performed by the corresponding match line signal repeaters ML—REP to capture early match signals (i.e., perform “early match capture”(EMC)), if any, from the even first match line segments MLe—a. These early match signals, if any, are passed as logic 1 signals to corresponding ones of the even second match line segments MLe—b. Then, during the time interval from 8 ns to 9 ns, the connect control signal CON—ab switches low-to-high to thereby enable the late capture of miss signals (i.e., perform “late miss capture” (LMC)), if any, from respective even first match line segments MLe—a. This LMC operation is performed while the second segments of CAM cells in the even rows are being searched and the “forced” miss signals from the odd rows are being passed from the odd first match line segments MLo—a to the odd second match line segments MLo—b (by corresponding match line signal repeaters in the odd rows).
At time t=9 ns, the evaluation control signal EV—a is again switched high-to-low to thereby precharge all of the first match line segments MLn—a in rows 0–3 in the quad group (and other quad groups) and prepare for the segment-to-segment search operations associated with the odd rows (e.g., rows 1, 3, 5, . . . , 1023). Commencement of these segment-to-segment operations in the odd rows is therefore delayed relative to commencement of the segment-to-segment operations in the even rows. In alternative embodiments, the sequence of even rows first and odd rows second may be reversed. Next, at t=10 ns, the evaluation control signal EV—a is switched low-to-high to commence the first segment of the segment-to-segment search operations associated with the odd rows. In addition, the force-to-miss signal F2M<3:0> is switched to <0101> to thereby discharge the first match line segments MLe—a in the even rows.
The time interval from 9 ns to 11 ns includes the passing of match line signals from the even second match line segments MLe—b to the even third match line segments MLe—c, in-sync with the evaluation control signal EV—c and the connect control signal CON—bc. These control signals also operate to pass “forced” miss signals from the odd second match line segments MLo—b to the odd third match line segments MLo—c. Next, the time interval from 11 ns to 13 ns includes the passing of match line signals from the even third match line segments MLe—c to the even fourth match line segments MLe—d, in-sync with the evaluation control signal EV—d and the connect control signal CON—cd. These control signals also operate to pass “forced” miss signals from the odd third match line segments MLo—c to the odd fourth match line segments MLo—d. These operations also include global masking and other operations that are described in detail in TABLE 2.
The time interval from 11 ns to 13 ns also includes the passing of match line signals from the odd first match line segments MLo—a to the odd second match line segments MLo—b, in-sync with the evaluation control signal EV—b and the connect control signal CON—ab. These control signals also operate to pass “forced” miss signals from the even first match line segments MLe—a to the even second match line segments MLe—b. The time interval from 13 ns to 15 ns includes the passing of match line signals from the odd second match line segments MLo—b to the odd third match line segments MLo—c, in-sync with the evaluation control signal EV—c and the connect control signal CON—bc. These control signals also operate to pass “forced” miss signals from the even second match line segments MLe—b to the even third match line segments MLe—c. Finally, the time interval from 15 ns to 17 ns includes the passing of match line signals from the odd third match line segments MLo—c to the odd fourth match line segments MLo—d, in-sync with the evaluation control signal EV—d and the connect control signal CON—cd. These control signals also operate to pass “forced” miss signals from the even third match line segments MLe—c to the even fourth match line segments MLe—d.
Upon completion of these even row and odd row segment-to-segment search operations, which are staggered relative to each other, a priority encoder (not shown) may evaluate the presence of a final match condition in a even row (e.g., row 2) and a final match condition in a next higher odd row (e.g., row 3) as a x2N match result. In the event left and right CAM arrays in a pair are used to perform a x4N search operation, then the priority encoder may evaluate the presence of final match conditions in corresponding even rows (e.g., row 2 (left CAM) and row 2 (right CAM)) and the presence of final match conditions in next higher odd rows (e.g., row 3 (left CAM) and row 3 (right CAM)) as a x4N match result. In a similar manner, the time intervals from t=26 ns to 34 ns illustrate the receipt of two xN search words that collectively support another x2N search operation.
The above described segment-to-segment search operations that collectively define a long word search operation may be efficiently pipelined with other operations, including operations to read an entry from a CAM array and write a new entry into a CAM array.
Among other things, the first write command with result in a simultaneous low-to-high switching of the global word line control signal GWL0 and the local word line control signal ZS—ab0 at t=16 ns. When this occurs, the first word line segment WL0—ab in row 0 will be made active to thereby cause the CAM cells (and possibly other memory cells) in segments A and B of row 0 to receive one-half of a new CAM entry. The first write command will also result in a high-to-low switching of the local word line control signal ZS—ab0 and the low-to-high switching of the local word line control signal ZS—cd0 at t=20 ns. When this occurs, the second word line segment WL0—cd in row 0 will be made active to thereby cause the CAM cells (and possibly other memory cells) in segments C and D of row 0 to receive a second-half of the new CAM entry.
The second write command results in a simultaneous low-to-high switching of the global word line control signal GWL1 and the local word line control signal ZS—ab1 at t=24 ns. When this occurs, the first word line segment WL3—ab in row 3 will be made active to thereby cause the CAM cells in segments A and B of row 3 to receive one-half of a new CAM entry. The second write command will also result in a high-to-low switching of the local word line control signal ZS—ab1 and the low-to-high switching of the local word line control signal ZS—cd1 at t=28 ns. When this occurs, the second word line segment WL3—cd in row 3 will be made active to thereby cause the CAM cells in segments C and D of row 3 to receive a second-half of the new CAM entry.
As illustrated by
When the CAM device is disposed in the ALT—MODE, columns S3 and S4 within segment A may support 4-bits of parity data. These 4-bits of parity data may be stored within four SRAM cells that occupy the same layout area as two TCAM cells (shown as lateral XY TCAM cells). One or more of these SRAM cells may constitute a dual-function check bit cell. The layout of an exemplary TCAM cell is more fully described in commonly assigned U.S. application Ser. No. 10/609,756, filed Jun. 30, 2003, the disclosure of which is hereby incorporated herein by reference. The four bits of parity data are labeled as: XE, YE, XO and YO. The label XE refers to the parity of the “even” X-bits within a CAM entry (i.e., the parity of the following bits: X0, X2, X4, X6, X8, . . . , X78). The label YE refers to the parity of the “even” Y-bits within a CAM entry (i.e., the parity of the following bits: Y0, Y2, Y4, Y6, Y8, . . . , Y78). The label XO refers to the parity of the “odd” X-bits within a CAM entry (i.e., the parity of the following bits: X1, X3, X5, X7, X9 . . . , X79). The label YO refers to the parity of the “odd” Y-bits within a CAM entry (i.e., the parity of the following bits: Y1, Y3, Y5, Y7, Y9, . . . , Y79). Based on the illustrated arrangement of the TCAM cells in
When the CAM device is disposed in the x80 MODE identified by
When the CAM device is disposed in the x40 MODE identified by
The arrangement of CAM cells in segments B and C is illustrated by
The two-dimensional (2D) pipelined nature of a long word (e.g., x8N) search operation illustrated by
In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
This application is a continuation-in-part (CIP) of U.S. application Ser. No. 10/323,236, filed Dec. 18, 2002 now U.S. Pat. No. 6,760,242, which claims the benefit of U.S. Provisional Application Ser. No. 60/371,491, filed Apr. 10, 2002. This application is also a continuation-in-part (CIP) of U.S. application Ser. No. 10/464,598, filed Jun. 18, 2003. The disclosures of U.S. application Ser. Nos. 10/323,236 and 10/464,598 are hereby incorporated herein by reference.
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| Number | Date | Country | |
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| Number | Date | Country | |
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| Child | 10701048 | US | |
| Parent | 10464598 | Jun 2003 | US |
| Child | 10323236 | US |
