Claims
- 1. A continuous process for the wet-chemical metallizing of porous substrates, consisting of the steps of:
- activating the substrate by bringing it into contact with an activating solution comprising a Pd/Sn solution at a selected temperature and selecting the concentration of the components of the activating solution to allow substantially optimum metallization of the substrate;
- removing the spent activating solution;
- wet-chemical metallizing the activated substrate by bringing it into contact with a metallizing solution and selecting the concentration of the components of the metallizing solution to allow substantially optimum metallization of the substrate;
- removing the spent chemical metallizing solution;
- saturating the metallized substrate with water; and
- removing the water,
- wherein the substrate has a porosity of between about 45% and about 95% and comprises a non-conductive synthetic material, and wherein each of the steps is incorporated into a single station so that the substrate proceeds through each station sequentially.
- 2. A continuous process for the wet-chemical metallizing of porous substrates, consisting of the steps of:
- activating the substrate by bringing it into contact with an activating solution comDrising a Pd/Sn solution and selecting the temperature of the activating solution to allow substantially optimum metallization of the substrate;
- removing the spent activating solution;
- wet-chemical metallizing the activated substrate by bringing it into contact with a metallizing solution and selecting the temperature of the metallizing solution to allow substantially optimum metallization of the substrate;
- removing the scent chemical metallizing solution;
- saturating the metallized substrate with water; and
- removing the water,
- wherein the substrate has a porosity of between about 45% and about 95% and comprises a non-conductive synthetic material, and wherein each of the steps is incorporated into a single station so that the substrate proceeds through each station sequentially.
- 3. A continuous process for the wet-chemical metallizing of porous substrates, consisting of the steps of:
- activating the substrate by bringing it into contact with an activating solution comprising a Pd/Sn solution at a selected temperature;
- removing the spent activating solution;
- wet-chemical metallizing the activated substrate by bringing it into contact with a metallizing solution at a selected temperature;
- removing the spent chemical metallizing solution;
- saturating the metallized substrate with water; and
- removing the water,
- wherein the substrate has a porosity of between about 45% and about 95% and comprises a non-conductive synthetic material, and wherein each of the steps is incorporated into a single station so that the substrate proceeds through each station sequentially.
- 4. A continuous process as claimed in claim 3, wherein the length of time the substrate is in contact with the activating solution is substantially the same as the time the substrate is in contact with the metallizing solution.
- 5. A continuous process as claimed in claim 3, wherein any of the steps of removing spent activating solution, removing spent metallizing solution, or removing water, employs a suction device.
- 6. A process according to claim 3, wherein the metallizing solution comprises a nickel-plating solution.
- 7. A process according to claim 6, wherein the nickel-plating solution lacks additional electrolytes, pH-regulator compounds, complexing agents, and other stabilizers.
- 8. A process according to claim 7, wherein the temperature of the metallizing solution is approximately 60.degree. C.
- 9. A process according to claim 3, wherein the temperature of the activating solution is approximately 30 to 35.degree. C.
- 10. A process according to claim 6, wherein the temperature of the activating solution is approximately 30 to 35.degree. C.
- 11. A process according to claim 7, wherein the temperature of the activating solution is approximately 30 to 35.degree. C.
- 12. A process according to claim 8, wherein the temperature of the activating solution is approximately 30 to 35.degree. C.
Parent Case Info
This application claims the priority of German patent application 19627413.3-45, filed Jul. 8, 1996, the disclosure of which is expressly incorporated herein by reference.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
RE30061 |
Shepherd |
Jul 1979 |
|
4201825 |
Ebneth |
May 1980 |
|
Foreign Referenced Citations (8)
Number |
Date |
Country |
36 31 055 |
Sep 1986 |
DEX |
36 37 130 |
Oct 1986 |
DEX |
37 10 895 |
Apr 1987 |
DEX |
38 43 903 |
Dec 1988 |
DEX |
39 25 232 |
Jul 1989 |
DEX |
40 33 518 |
Oct 1990 |
DEX |
39 14 726 |
Nov 1990 |
DEX |
42 42 443 |
Dec 1992 |
DEX |