Claims
- 1. A method of forming a new ingot having a target orientation from an original ingot having an original orientation, comprising:
- grinding a flat on the original ingot, where the flat defines a flat plane parallel to an original longitudinal axis of the original ingot;
- cutting the original ingot into a plurality of sections, where each cut is made in a respective cutting plane which is perpendicular to the original longitudinal axis and the flat plane;
- marking each section with a respective circular trace using the flat as a reference, where each respective trace is centered upon a new longitudinal axis of a new ingot to be formed from the respective section, where the new longitudinal axis is perpendicular to the flat plane and is perpendicular to the original longitudinal axis;
- removing material outside the trace from each section by cutting the respective sections, where each cut is made in a plane perpendicular to the flat plane; and
- removing material outside the trace from each section to form a respective new ingot from each section.
- 2. The method of claim 1, where the original ingot has a crystal orientation of <100> and the new ingot has a crystal orientation of <110>.
- 3. The method of claim 2, where the flat is a {110} face.
- 4. The method of claim 1, where the original ingot has a crystal orientation of <111> and the new ingot has a crystal orientation of <110>.
- 5. The method of claim 4, where the flat is a {110} face.
- 6. The method of claim 1, where the original ingot is a silicon crystal ingot.
- 7. The method of claim 1, where the original ingot is a float-zone ingot.
- 8. An ingot formed by the method of claim 1.
- 9. A silicon <110> ingot formed from a silicon <100> ingot by the method of claim 1.
- 10. A silicon <110> ingot formed from a silicon <111> ingot by the method of claim 1.
- 11. A method of forming a new ingot having a target orientation from an original ingot having an original orientation, where the original ingot has a flat defining a flat plane parallel to an original longitudinal axis of the original ingot, comprising:
- marking a circular trace upon the original ingot using the flat as a reference, where the trace is centered upon a new longitudinal axis of the new ingot, where the new longitudinal axis is perpendicular to the flat plane and is perpendicular to the original longitudinal axis; and
- removing material outside the trace from the original ingot by cutting the original ingot, where each cut is made in a plane perpendicular to the flat plane.
- 12. The method of claim 11, further comprising cutting the original ingot into a plurality of sections, and removing material from each section to form a separate new ingot.
- 13. An ingot formed by the method of claim 11.
- 14. A silicon <110> ingot formed from a silicon <100> ingot by the method of claim 11.
- 15. A silicon <110> ingot formed from a silicon <111> ingot by the method of claim 11.
- 16. A method of forming a new ingot having a target orientation from an original ingot having an original orientation, comprising:
- removing material from an original ingot using a flat formed in the original ingot as a reference to form a new ingot,
- where the flat defines a plane parallel to an original longitudinal axis of the original ingot, and
- where a new longitudinal axis of the new ingot is perpendicular to the flat and is perpendicular to the original longitudinal axis.
- 17. The method of claim 16, where the original ingot has a crystal orientation of <100> and the new ingot has a crystal orientation of <110>.
- 18. The method of claim 17, where the flat is a {110} face.
- 19. The method of claim 16, where the original ingot has a crystal orientation of <111> and the new ingot has a crystal orientation of <110>.
- 20. The method of claim 19, where the flat is a {110} face.
- 21. The method of claim 16, where the original ingot is a silicon crystal ingot.
- 22. The method of claim 16, where the original ingot is a float-zone ingot.
- 23. An ingot formed by the method of claim 16.
- 24. A silicon <110> ingot formed from a silicon <100> ingot by the method of claim 16.
- 25. A silicon <110> ingot formed from a silicon <111> ingot by the method of claim 16.
Parent Case Info
This application claims the benefit of U.S. Provisional Application Ser. No. 60/084,521, filed May 7, 1998.
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