Claims
- 1. A conductor material for a semiconductor device, a corrosion-resistant Al or Al alloy material of Al alloyed with a metal selected from the group consisting of Mg, Si, Mn, Cu, Zn, Cr, Ni, Fe and mixtures thereof on the surface of which deposits are formed, said deposits comprising unit periodic layers formed such that unit deposits of a plurality of layers consisting of components selected from groups (1) or (2), the layers being adjacent to each other, with each of said layer being formed of said components different from one another, and characterized by the fact that said unit periodic layers are less than 50 .ANG. thick, and that the total thickness of the deposit is more than five times the average thickness of said unit periodic layer and is less than 2,500 .ANG., said groups (1) and (2) being selected from the group consisting of:
- (1) Al, Si, Ti, Zr, Hf, Nb, Ta, Cr, noble metals, their oxides, carbides, nitrides, borides, silicides and mixtures thereof, and
- (2) Si, Ti, Zr, Hf, Nb, Ta, Cr, noble metals, their oxides, carbides, nitrides, borides, silicides and mixtures thereof.
- 2. A corrosion-resistant Al or Al alloy material as specified in claim 1 wherein one of the components as described in claim 1 is Al.
- 3. A corrosion-resistant Al or Al alloy material of claim 1, wherein each components (1) and (2) is present in an amount effective to impart corrosion-resistance to the Al or Al alloy material.
Parent Case Info
This application is a continuation of U.S. application Ser. No. 07/694,394, filed on May 1, 1991, now abandoned.
US Referenced Citations (8)
Continuations (1)
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Number |
Date |
Country |
Parent |
694394 |
May 1991 |
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