Patent Application
20220185740
The present disclosure relates to a corrosion-resistant ceramic, a plasma treatment device member, and a plasma treatment device.
Conventionally, plasma is used to treat an object to be treated in the steps of etching or film formation processing when manufacturing a semiconductor or a liquid crystal. In such steps, a corrosive gas containing a halogen element, such as a highly reactive fluorine-based corrosive gas or a chlorine-based corrosive gas, is used.
Therefore, members used in a semiconductor or liquid crystal manufacturing device that come into contact with such a corrosive gas or its plasma need to have high corrosion resistance. Patent Document 1 proposes, as a ceramic that is used in such members, a corrosion-resistant ceramic containing, as a main component, an oxide containing at least one element among Group 3A elements of the periodic table and at least one element among Group 4A elements of the periodic table. Patent Document 1 further describes, as an example of such a corrosion-resistant ceramic, a corrosion-resistant ceramic containing yttrium oxide as a main component and 25 mass % of zirconium oxide.
With the corrosion-resistant ceramic proposed in Patent Document 1, even if cold isostatic pressing (CIP) is used in the manufacturing process of the ceramic, the interval between open pores tends to become narrow and, when the ceramic is exposed to a corrosive gas or plasma thereof, there is a high chance that the portion at which the interval between the open pores is narrow may fall off. Furthermore, the interval between open pores cannot be sufficiently increased even if a hot isostatic pressing (HIP) treatment is implemented after firing, and therefore further improvement in corrosion resistance is required.
Thus, an object of the present disclosure is to provide a corrosion-resistant ceramic having high corrosion resistance even when exposed to a corrosive gas or plasma, a plasma treatment device member, and a plasma treatment device.
The corrosion-resistant ceramic of the present disclosure is a corrosion-resistant ceramic that contains yttrium zirconium oxide as a main component and has a plurality of open pores. The difference between an average value of inter-centroid distances between the open pores and an average value of diameters of the open pores is 50 μm or greater.
The plasma treatment device member of the present disclosure contains the above-described corrosion-resistant ceramic. Furthermore, the plasma treatment device of the present disclosure is provided with the aforementioned plasma treatment device member and a plasma generating device.
According to the present disclosure, a corrosion-resistant ceramic having high corrosion resistance, and also a plasma treatment device member and a plasma treatment device can be provided.
A corrosion-resistant ceramic, a plasma treatment device member, and a plasma treatment device according to the present disclosure will be described in detail below with reference to the drawings.
A plasma treatment device 10 illustrated in
A vacuum pump 9 is connected to the lower container 2, and a vacuum state can be formed inside the treatment chamber 3. A gas nozzle 7 that supplies an etching gas is provided in a peripheral wall of the lower container 2. A peripheral wall of the upper container 1 is provided with an induction coil 8 that is electrically connected to an RF power supply.
When the semiconductor substrate 6 is to be etched using the plasma treatment device 10, first, the treatment chamber 3 is exhausted to a predetermined vacuum degree by the vacuum pump 9. Next, the semiconductor substrate 6 is attracted to the placement surface of the electrostatic chuck 5. Subsequently, electricity is supplied to the induction coil 8 from the RF power supply while an etching gas such as CF4 gas is supplied through the gas nozzle 7. Through this supply of electricity, a plasma of the etching gas is formed in the internal space above the semiconductor substrate 6, and the semiconductor substrate 6 can be etched in a predetermined pattern.
Examples of the etching gas include halogen-based gases such as a fluorine-based gas that is a fluorine compound, such as CF4, SF6, CHF3, ClF3, NF3, C4F8, or HF, a chlorine-based gas that is a chlorine compound, such as Cl2, HCl, BCl3, or CCl4, or a bromine-based gas that is a bromine compound, such as Br2, HBr, or BBr3. These etching gases are highly corrosive.
The gas nozzle 7 described above is one embodiment of the plasma treatment device member of the present disclosure. The gas nozzle 7 contains a corrosion-resistant ceramic (hereinafter, simply referred to as a “ceramic”) that contains yttrium zirconium oxide as a main component and has a plurality of open pores. A difference L1 (hereinafter, may be described as an “interval L1”) between an average value of inter-centroid distances of the open pores and an average value of the diameters of the open pores of the ceramic is 50 μm or greater.
When the interval L1 is within this range, even if the etching gas comes into contact with the surface of the ceramic and particles are generated from the open pores, because the interval L1 is relatively large, the possibility of particles colliding with the contour (edge) of adjacent open pores is reduced, and new particles are less likely to be generated. In particular, the interval L1 is preferably 100 μm or greater.
In the present specification, a “main component of the ceramic” means a component that accounts for 70 mass % or more of the total of 100 mass % of the components constituting the ceramic. Of the total of 100 mass % of the components constituting the ceramic, the content of the yttrium zirconium oxide may be 75 mass % or greater. Each component constituting the ceramic can be identified by an X-ray diffractometer using CuKα radiation. The content of the main component can be determined by the Rietveld refinement technique. The yttrium zirconium oxide is, for example, an oxide having the compositional formula of YZrO3.
In addition to the yttrium zirconium oxide, the corrosion-resistant ceramic may contain, for example, at least one element selected from silicon, iron, aluminum, calcium, and magnesium. The silicon content may be 300 ppm by mass or less in terms of SiO2, the iron content may be 50 ppm by mass or less in terms of Fe2O3, the aluminum content may be 100 ppm by mass or less in terms of Al2O3, and the total content of calcium and magnesium may be 350 ppm by mass or less in terms of CaO and MgO, respectively. Furthermore, the carbon content may be 100 ppm by mass or less.
The content of each component may be determined by using, for example, an inductively coupled plasma (ICP) emission spectrophotometer or a fluorescent X-ray analysis device. The carbon content may be determined using a carbon analyzer.
The corrosion-resistant ceramic may also contain, for example, nickel, and the nickel content is 4 ppm by mass or less in terms of NiO. When Ni oxidizes, variations in the color tone easily occur depending on the degree of oxidation, and such variations easily impair the product value. Therefore, the Ni content in terms of NiO preferably satisfies the aforementioned range, and in such a range, variations in color tone are suppressed and product value is improved. Here, the Ni content in terms of NiO may be determined by using a glow discharge mass spectrometer (GDMS).
When the inter-centroid distance of the open pores is to be determined, measurement is performed using an optical microscope with the magnification set to 200× and the measurement range of one location set to 7.1066×105 μm2.
This measurement is performed at four locations whereby the inter-centroid distances of the open pores can be determined.
The inter-centroid distance between adjacent open pores can be determined by applying an inter-centroid distance measuring technique of the image analysis software “Azo-kun (Ver 2.52)” (trade name, available from Asahi Kasei Engineering Corporation) to this observation range as the measurement target. In the present disclosure, the inter-centroid distance of the open pores is the linear distance between centroids of the open pores.
As setting conditions for the method for measuring the inter-centroid distance, the measurement conditions are set as follows: the brightness of the particles is set to dark, the binarization method is set to manual, the threshold value is set from 190 to 220, and the small figure removal area is set to 1 μm2, and a noise removal filter is used. When measurement as described above is performed, the threshold value is set from 190 to 220. However, the threshold value need only be adjusted according to the brightness of the image, which is within a range. Once the brightness of particles has been set to dark, the binarization method has been set to manual, the small figure removal area has been set to 1 μm2, and a noise removal filter has been provided, the threshold value may be adjusted such that a marker appearing in the image matches the shape of an open pore.
When the number of open pores observed in each of the measurement ranges indicated above is one or less, the measurement range may be widened so that at least two or more open pores are present in the measurement range.
The kurtosis of the inter-centroid distances between open pores in the ceramic may be 0 or greater. When the kurtosis of the inter-centroid distances between open pores is within this range, the variation in the inter-centroid distances between the open pores becomes small. Furthermore, there is an increase in the number of open pores for which the inter-centroid distance between open pores is a value close to the average value. As a result, the expansion of micro-cracks in adjacent open pores is more likely to be suppressed, and reliability is improved. In particular, the kurtosis of the inter-centroid distances between open pores is preferably 0.05 or greater.
Here, a kurtosis Ku is an index (statistical amount) indicating to what extent the peak and tails of a distribution differ from those of normal distribution. If the kurtosis Ku is greater than 0, a distribution with a sharp peak is obtained. If the kurtosis Ku is equal to 0, the distribution becomes a normal distribution. If the kurtosis Ku is less than 0, the distribution becomes a distribution with a rounded peak.
The average value of the diameters of the open pores in the ceramic may be 2.5 μm or less. If the average value of the diameters of the open pores is 2.5 μm or less, there is a reduction in particles entering the open pores. Further, when the amount of particles entering the open pores is small, damage to the wall surfaces of the open pores and the generation of new particles are less likely to occur. In particular, the average value of the diameters of the open pores in the ceramic is preferably 0.2 μm or less.
The kurtosis of the diameters of the open pores in the ceramic may be 0 or greater. When the kurtosis of the diameters of the open pores is within this range, the variation in the diameters of the open pores is small, and there is an increase in the number of open pores for which the diameter of the open pore is a value close to the average value. As a result, the number of open pores with an unusually large diameter decreases, and impurities originating from the inside of the open pores can be reduced. In particular, the kurtosis of the inter-centroid distances between open pores is preferably 0.5 or greater.
The coefficient of variation of the diameters of the open pores in the ceramic may be 0.7 or less. When the coefficient of variation of the diameters of the open pores is 0.7 or less, the number of open pores having an abnormally large diameter is reduced. As a result, impurities originating from the inside of the open pores can be further reduced.
The surface area ratio of the open pores in the ceramic may be 0.1% or less. As the number of open pores decreases, corrosion resistance increases. In particular, the surface area ratio of the open pores is preferably 0.05% or less.
In addition to the inter-centroid distances, the average value of the diameters of the open pores, the coefficient of variation of the diameters of the open pores, and the surface area ratio of the open pores can be determined by using the image analysis software “Win ROOF (Ver. 6.1.3)” (available from Mitani Corporation). Specifically, these values are measured with the magnification set to 200×, the measurement range of one location set to 7.1066×105 μm2, and the threshold value of an equivalent circle diameter corresponding to the diameter set to 0.21 μm. This measurement is performed at four locations, whereby the average value of the diameters of the open pores, the coefficient of variation of the diameters of the open pores, and the surface area ratio of the open pores can be determined. The kurtosis Ku of the diameters of the open pores and the kurtosis Ku of the inter-centroid distances of the open pores may be determined using the function KURT available in Excel (trade name, available from Microsoft Corporation).
The average particle size of crystal particles in the ceramic may be from 0.2 μm to 0.5 μm. When the average particle size is 0.2 μm or greater, the thermal conductivity of the plasma treatment device member increases. As a result, the thermal uniformity of the plasma treatment device member is increased. On the other hand, when the average particle size is less than or equal to 0.5 μm, the generation of abnormally grown crystal particles that decrease the mechanical strength of the ceramic can be suppressed. As a result, the mechanical strength of the plasma treatment device member can be increased. In order to further increase the mechanical strength of the plasma treatment device member, the average particle size may be 0.4 μm or less.
The average particle size of the crystal particles is determined by using a scanning electron microscope to measure the surface of the ceramic. Specifically, the magnification is set to 1000×, and four straight lines of the same length are drawn in a range with a horizontal length of 112 nm and a vertical length of 80 nm. The average particle size is then determined by dividing the number of crystals present on the four straight lines by the total length of these straight lines. The length of each straight line may be 20 nm. If the grain boundary is not easily identified on the fired surface and measurement of the particle size is difficult, the surface of the ceramic may be polished until the arithmetic mean roughness Ra is 0.4 nm or less and then thermally etched at a temperature of 100° C. lower than the firing temperature (for example, a temperature from 1200° C. to 1600° C.), and the etched surface may be used as the measuring surface.
With the ceramic having a shape that is a cylindrical body, in a cross-section including an inner circumferential surface of the cylindrical body, the concentration of silicon on the inner circumferential surface may be higher than the concentration of silicon on a virtual circumferential surface parallel to the inner circumferential surface, where the virtual circumferential surface is positioned between the inner circumferential surface and an outer circumferential surface. The contact angle of silicon with respect to pure water is small. Therefore, when the concentration of silicon on the inner circumferential surface is higher than the concentration of silicon on the virtual circumferential surface, for a case in which the ceramic is washed using a water-soluble detergent, the removal efficiency of contamination from the inner circumferential surface, where the contamination is easily generated by the supply of etching gas, can be increased.
On the other hand, when the concentration of silicon on the virtual circumferential surface is lower than the concentration of silicon on the inner circumferential surface, the generation of silicon dioxide having a coefficient of linear expansion that differs from that of yttrium zirconium oxide is suppressed internally. As a result, strain generated between the interior and a surface layer section including the inner circumferential surface can be reduced. The contact angle of silicon with respect to pure water is small. Therefore, when the corrosion-resistant ceramic is configured as described above and is ultrasonically cleaned using a water-soluble detergent, the efficiency at which contamination is removed from the inner circumferential surface, from which it is difficult to remove contamination, can be increased.
The concentration of silicon may be determined by observing a color mapping image (horizontal length of 120 μm, vertical length of 90 μm) of silicon by using an electron beam micro-analyzer (EPMA), targeting a polished cross section that includes the inner circumferential surface.
Next, an embodiment of a method for manufacturing a ceramic and a plasma treatment device member according to the present disclosure will be described. First, a powder containing yttrium oxide as a main component, a powder containing zirconium oxide as a main component (hereinafter, the powder containing yttrium oxide as a main component and the powder containing zirconium oxide as a main component may be collectively referred to as a “ceramic powder”), a wax, a dispersing agent, and a plasticizer are prepared.
With respect to a total of 100 parts by mass of the ceramic powder, for example, the wax is used at a proportion of from 10 parts by mass to 16 parts by mass, the dispersing agent is used at a proportion of from 0.1 parts by mass to 0.6 parts by mass, and the plasticizer is used at a proportion of from 1.0 part by mass to 1.8 parts by mass. The mass ratio of the powder A containing yttrium oxide as a main component to the powder B containing zirconium oxide as a main component is preferably, for example, A:B=2.5:1 to 3.1:1.
For example, the ceramic powder, the wax, the dispersing agent, and the plasticizer may all be heated at a temperature from 70° C. to 130° C., and stored in a resin container. At this time, the wax, the dispersing agent, and the plasticizer are normally liquids. Storing these materials in a container at such a temperature makes it easier to obtain a ceramic having a kurtosis of the inter-centroid distances between open pores of 0 or greater. Further, by heating at a temperature from 90° C. to 130° C., a ceramic having a kurtosis of the inter-centroid distances between open pores of 0 or greater is more easily obtained.
Next, the container is placed in a stirrer, and the ceramic powder, wax, dispersing agent, and plasticizer are stirred by rotating the container for one minute or longer (a rotary kneading process) to yield a slurry. In order to obtain a ceramic in which the average particle size of crystal particles is from 0.2 μm to 0.5 μm, the average particle size (D50) of the ceramic powder after performing the rotary kneading process is, for example, from 0.1 μm to 0.3 μm. The yielded slurry is filled into a syringe and subjected to defoaming while the syringe is rotated for one minute or longer by using a defoaming jig. In order to obtain a ceramic in which the kurtosis of the diameters of the open pores is 0 or greater, the slurry need only be pre-heated at a temperature of from 100° C. to 190° C. before being subjected to the defoaming treatment.
Next, the syringe filled with the defoamed slurry is mounted to an injection molding machine, the defoamed slurry is molded while the temperature of the slurry is maintained at 70° C. or higher, and a cylindrical molded article is obtained. A channel through which the slurry passes in the injection molding machine is also preferably maintained at 70° C. or higher. The temperature of the slurry may be maintained at 90° C. or higher, and the channel through which the slurry passes may also be maintained at 90° C. or higher.
The obtained molded article is sequentially degreased and fired to yield a sintered body. This sintered body corresponds to the ceramic of the present disclosure. Here for example, the firing atmosphere is preferably an air atmosphere, the firing temperature is preferably from 1480° C. to 1880° C., and the retention time is preferably from 1.5 hours to 5 hours.
To yield a ceramic in which the average diameter of the open pores is 2.5 μm or less, the firing atmosphere is preferably an air atmosphere, the firing temperature is preferably from 1580° C. to 1880° C., and the retention time is preferably from 1.5 hours to 5 hours.
To obtain a ceramic in which the coefficient of variation of the diameters of the open pores is 0.7 or less, the firing atmosphere is preferably an air atmosphere, the firing temperature is preferably from 1580° C. to 1880° C., and the retention time is preferably from 2 hours to 5 hours.
To obtain a ceramic in which the surface area ratio of open pores is 0.1% or less, the firing atmosphere is preferably an air atmosphere, the firing temperature is preferably from 1630° C. to 1880° C., and the retention time is preferably from 1.5 to 5 hours.
Next, the surface of the sintered body can be mechanically machined to obtain a gas nozzle, which is one embodiment of a plasma treatment device member.
As described above, in the present disclosure, a plasma treatment device member is produced by molding using an injection molding machine. Therefore, unlike a case of using an extrusion molding method or a machining method in which through holes are mechanically formed using a tool such as a drill after dry pressure molding, the interval between open pores is widened. As a result, a plasma treatment device member having excellent corrosion resistance can be formed.
The present disclosure is not limited to the above-described embodiment, and various modifications, improvements, combinations, and the like may be made within a range that does not depart from the gist of the present disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-070698 | Apr 2019 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2020/015066 | 4/1/2020 | WO | 00 |
