Claims
- 1. A method for creating a protective layer on aluminum components used in a plasma chambers, including the steps of:
coating the substrate with a dielectric layer; and coating the dielectric layer with a metal layer.
- 2. The method of claim 1, wherein said dielectric layer is deposited via chemical vapor deposition.
- 3. The method of claim 1, wherein said dielectric layer is created via anodization.
- 4. The method of claim 1, wherein said dielectric layer is deposited via thermal spraying.
- 5. The method of claim 4, wherein said dielectric layer is melted and deposited using a plasma gun
- 6. The method of claim 1, wherein said dielectric layer has a thickness within a range of about 0.127 mm to 0.0762 mm.
- 7. The method of claim 1, wherein said dielectric layer is a composite of at least two layers of different dielectric materials formed sequentially.
- 8. The method of claim 1, wherein said dielectric layer is a composite of at least two different dielectric materials deposited simultaneously.
- 9. The method of claim 1, wherein said dielectric layer is a fluorocarbon polymer layer.
- 10. The method of claim 1, wherein said dielectric layer contains at least one dielectric material selected from the group consisting of boron carbide, silicon carbide, silicon dioxide, silicon nitride, CVD diamond, aluminum silicates, and glass ceramics.
- 11. The method of claim 1, wherein said metal layer has a thickness within a range bout 0.0508 mm to 0.0762 mm.
- 12. The method of claim 1, wherein said metal layer is deposited using evaporative techniques.
- 13. The method of claim 1, wherein said metal layer is a composite of at least two different metals deposited sequentially.
- 14. The method of claim 1, wherein said metal layer is a composite of at least two different metals deposited simultaneously.
- 15. The method of claim 1, wherein said metal layer contains at least one metal selected from the group consisting of nickel, palladium, platinum, gold, chromium, silver and rhenium.
- 16. A component for exposure to a plasma within a plasma reactor comprising:
an aluminum substrate; a dielectric layer covering said aluminum substrate; and a metal layer covering said dielectric layer.
- 17. The component of claim 16, wherein said dielectric layer is selected from the group consisting of boron carbide, silicon carbide, silicon dioxide, silicon nitride, CVD diamond, aluminum silicates, and glass ceramics.
- 18. The component of claim 16, wherein said metal layer is selected form the group consisting of nickel, palladium, platinum, gold, chromium, silver and rhenium.
- 19. The component of claim 16, wherein said dielectric layer is formed via one of the following methods: thermal spraying, anodization and chemical vapor deposition.
- 20. The component of claim 16, wherein said metal layer is formed using one of the following methods: evaporative deposition, sputtering.
Parent Case Info
[0001] This application has a priority date based on Provisional Patent Application No. 60/348,666, filed Jan. 15, 2002.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60348666 |
Jan 2002 |
US |