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This relates to plasmon waves, and, more particularly, to coupling energy in a plasmon wave to an electron beam.
It is known to couple light onto the surface of a metal, creating a so-called plasmon wave. This effect has been used, e.g., near-field optical microscopy. However, to date there has been no good way to electrically detect a plasmon wave and there has been limited practicality in trying to use plasmons to communicate data.
It is desirable to electrically detect plasmon waves and to use plasmons to communicate data. One reason for this is because plasmons move faster than high frequency signals.
The following description, given with respect to the attached drawings, may be better understood with reference to the non-limiting examples of the drawings, wherein:
As shown in
Although the transmission line is preferably metal, those skilled in the art will realize, upon reading this description, that the transmission line may be formed of other non-metallic substances or of a combination of metallic and non-metallic substances. For example, the transmission line may comprise gold (Au), silver (Ag), copper (Cu) or aluminum (Al). Those skilled in the art will realize and understand, upon reading this description, that different and/or other metals may be used.
Those skilled in the art will realize, upon reading this description, that the end of the transmission line does not have to have a pointed end. Further, the detector does not have to be at an end of the line, although such embodiments are presently considered to increase the field strength and thus make detection easier. For example, as shown in
The charged particle beam can include ions (positive or negative), electrons, protons and the like. The beam may be produced by any source, including, e.g., without limitation an ion gun, a thermionic filament, a tungsten filament, a cathode, a field-emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.
The detector 108 is constructed and adapted to detect breaks or deflections of the beam E. Those skilled in the art will realize that the detector 108 can provide a signal indicative of the detected plasmon waves to other circuitry (not shown). The detector may be constructed, e.g., as described in related U.S. patent application Ser. No. 11/400,280, titled “Resonant Detector for Optical Signals,” filed Apr. 10, 2006, the contents of which have been fully incorporated herein by reference.
Plasmon waves (denoted P) on the transmission line 100 travel in the direction of the pointed end 104. As the waves reach the pointed end 104, they cause disruption of an electric field around the point which, in turn, deflects the particle beam E. The detector 108 detects the deflection and thereby recognizes the presence and duration of the plasmon waves. Plasmon waves P will travel along the side surface 110 of the transmission line 100 and along the top surface 112.
Plasmon waves may travel in the transmission line 100 for a variety of reasons, e.g., because of a light wave (W) incident on the transmission line. However, this invention contemplates using plasmon wave detector described herein, regardless of the source or cause of the wave. The plasmon wave may contain or be indicative of a data signal.
Since the particle beam emitted by the source of charged particles may be deflected by any electric and/or magnetic field, one or more shields or shielding structure(s) may be added to block out unwanted fields. Such shield(s) and/or shielding structure(s) may be formed on the same substrate as the source of charged particles and/or the transmission line so that only fields from the transmission line will interact with the particle beam.
The devices according to embodiments of the present invention may be made, e.g., using techniques such as described in U.S. patent application Ser. No. 10/917,511, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching” and/or U.S. application Ser. No. 11/203,407, entitled “Method Of Patterning Ultra-Small Structures,” both of which have been incorporated herein by reference. The nano-resonant structure may comprise any number of resonant microstructures constructed and adapted to produce EMR, e.g., as described above and/or in U.S. application Ser. No. 11/325,448, entitled “Selectable Frequency Light Emitter from Single Metal Layer,” filed Jan. 5, 2006, U.S. application Ser. No. 11/325,432, entitled, “Matrix Array Display,” filed Jan. 5, 2006, and U.S. application Ser. No. 11/243,476, filed on Oct. 5, 2005, entitled “Structures And Methods For Coupling Energy From An Electromagnetic Wave”; U.S. application Ser. No. 11/243,477, filed on Oct. 5, 2005, entitled “Electron beam induced resonance;” and U.S. application Ser. No. 11/302,471, entitled “Coupled Nano-Resonating Energy Emitting Structures,” filed Dec. 14, 2005.
While certain configurations of structures have been illustrated for the purposes of presenting the basic structures of the present invention, one of ordinary skill in the art will appreciate that other variations are possible which would still fall within the scope of the appended claims. While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
The present invention is related to U.S. application Ser. No. 11/302,471, entitled “Coupled Nano-Resonating Energy Emitting Structures,” filed Dec. 14, 2005, and U.S. application Ser. No. 11/349,963, filed Feb. 9, 2006, entitled “Method And Structure For Coupling Two Microcircuits,” the entire contents of each of which are incorporated herein by reference. The present invention is related to the following co-pending U.S. Patent applications which are all commonly owned with the present application, the entire contents of each of which are incorporated herein by reference: (1) U.S. patent application Ser. No. 11/238,991, filed Sep. 30, 2005, entitled “Ultra-Small Resonating Charged Particle Beam Modulator”; (2) U.S. patent application Ser. No. 10/917,511, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching”; (3) U.S. application Ser. No. 11/203,407, filed on Aug. 15, 2005, entitled “Method Of Patterning Ultra-Small Structures”; (4) U.S. application Ser. No. 11/243,476, filed on Oct. 5, 2005, entitled “Structures And Methods For Coupling Energy From An Electromagnetic Wave”; (5) U.S. application Ser. No. 11/243,477, filed on Oct. 5, 2005, entitled “Electron beam induced resonance,” (6) U.S. application Ser. No. 11/325,448, entitled “Selectable Frequency Light Emitter from Single Metal Layer,” filed Jan. 5, 2006; (7) U.S. application Ser. No. 11/325,432, entitled, “Matrix Array Display,” filed Jan. 5, 2006, (8) U.S. application Ser. No. 11/410,905, entitled, “Coupling Light of Light Emitting Resonator to Waveguide,” and filed Apr. 26, 2006; (9) U.S. application Ser. No. 11/411,120, entitled “Free Space Interchip Communication,” and filed Apr. 26, 2006; (10) U.S. application Ser. No. 11/410,924, entitled, “Selectable Frequency EMR Emitter,” filed Apr. 26, 2006; (11) U.S. application Ser. No. 11/______, entitled, “Multiplexed Optical Communication between Chips on A Multi-Chip Module,” filed on even date herewith [atty. docket 2549-0035]; (12) U.S. patent application Ser. No. 11/400,280, titled “Resonant Detector for Optical Signals,” filed Apr. 10, 2006.