1. Field of the Invention
The present invention is broadly concerned with novel compositions that can be formed into high refractive index layers. The compositions are useful for forming solid-state devices such as flat panel displays, optical sensors, integrated optical circuits, light-emitting diodes (LEDs), microlens arrays, and optical storage disks.
2. Description of the Prior Art
High refractive index coatings offer a improved performance in the operation of many optoelectronic devices. For example, the efficiency of LEDs is improved by applying a layer of high refractive index material between the device and the encapsulating material, thereby reducing the refractive index mismatch between the semiconductor substrate and the surrounding encapsulating plastic. A higher refractive index material also allows lenses to have a higher numerical aperture (NA), which leads to increased performance.
Many organic polymer systems offer high optical transparency and ease of processing, but seldom provide high refractive indices. Furthermore, most of the UV-curable resins currently available are based on free radical polymerization. This method, while allowing for rapid curing, is sensitive to the presence of oxygen. Optically clear epoxy resins, on the other hand, are mostly cured by thermal methods, have long cure times, or suffer from short pot lives.
A need exists for curable compositions that have high refractive indices and high optical transparency for use in optical and photonic applications.
The present invention overcomes these problems by providing novel compositions having high refractive indices and useful in the fabrication of optoelectronic components. The compositions broadly comprise a reactive solvent system (e.g., aromatic resin functionalized with one or more reactive groups such as epoxides, vinyl ethers, oxetanes) that dissolve a reactive high refractive index component such as aromatic epoxides, vinyl ethers, oxetanes, phenols, or thiols.
In more detail, the composition comprises a compound (I) having a formula selected from the group consisting of
where:
Preferred Aromatic Moieties I include those selected from the group consisting of
Preferred Aromatic Moieties II include those selected from the group consisting of
Preferred Aromatic Moieties III include those selected from the group consisting of
In each of the structures of Aromatic Moieties I, Aromatic Moieties II, and Aromatic Moieties III above, the variables are defined as follows:
It will be understood that y can readily be selected by one of ordinary skill in the art, depending upon the value of m.
In preferred embodiments where the compound is acting as a reactive solvent. As used herein, a reactive solvent is one that reacts with the other compounds in the composition so as to be substantially (i.e., at least about 95% by weight, preferably at least about 99% by weight, and even more preferably about 100% by weight) consumed during the subsequent polymerization and crosslinking reactions. The reactive solvent also functions to dissolve the other ingredients in the composition to assist in homogenizing the composition.
In embodiments where the compound is acting as a high refractive index material, m will be at least 1. In order to achieve suitably high refractive indices, it is preferred that the X group be present in the compound to provide at least about 1%> by weight X groups, more preferably from about 5-80% by weight X groups, and even more preferably from about 30-70% by weight X groups, based upon the total weight of the composition taken as 100% by weight.
In a particular preferred embodiment, the composition will comprise both the compound as a reactive solvent (i.e., without X groups) and as a high refractive index material (i.e., with X groups). It is preferred that the reactive solvent compound be present at levels of at least about 1% by weight, preferably from about 5-95% by weight, and even more preferably from about 10-50% by weight, based upon the total weight of the composition taken as 100%> by weight. The high refractive index compound is preferably present at levels of at least about 1% by weight, preferably from about 5-95% by weight, and even more preferably from about 10-90%) by weight, based upon the total weight of the composition taken as 100% by weight.
The composition also preferably comprises a crosslinking catalyst. Preferred crosslinking catalysts are selected from the group consisting of acids, photoacid generators (preferably cationic), photobases, thermal acid generators, thermal base generators, and mixtures thereof. Examples of particularly preferred crosslinking catalysts include those selected from the group consisting of substituted trifunctional sulfonium salts (preferably where at least one functional group is an aryl group), iodonium salts, disulfoncs, triazines, diazomethanes, and sulfonates. The crosslinking catalyst should be included at levels of from about 1-15% by weight, preferably from about 1-10% by weight, and even more preferably from about 1-8% by weight, based upon the total weight of the reactive solvent and high refractive index material taken as 100% by weight.
In another embodiment, the composition preferably further comprises a compound selected from the group consisting of
where:
It will be understood that y can readily be selected by one of ordinary skill in the art, depending upon the value of m.
In a particularly preferred embodiment, the composition comprises very low levels of non-reactive solvents or diluents (e.g., PGME, PGMEA, propylene carbonate). Thus, the composition comprises less than about 5% by weight, preferably less than about 2% by weight, and even more preferably about 0% by weight non-reactive solvents or diluents, based upon the total weight of the composition taken as 100% by weight.
It will be appreciated that other optional ingredients can be included in the inventive compositions as well. Examples of some optional ingredients include fillers, UV stabilizers, and surfactants.
The inventive compositions are formed by heating the reactive solvent compound(s) until it achieves a temperature of from about 20-100° C., and more preferably from about 60-80° C. The high refractive index compound(s) are then added and mixing is continued until a substantially homogeneous mixture is obtained. The crosslinking catalyst and any other optional ingredients are then added and mixing is continued.
The compositions are applied to a substrate by any known method to form a coating layer or film thereon. Suitable coating techniques include dip coating, roller coating, injection molding, film casting, draw-down coating, or spray coating. A preferred method involves spin coating the composition onto the substrate at a rate of from about 500-5,000 rpm (preferably from about 1,000-4,000 rpm) for a time period of from about 30-480 seconds (preferably from about 60-300 seconds) to obtain uniform films. Substrates to which the coatings can be applied include those selected from the group consisting of silicon, silicon dioxide, silicon nitride, aluminum gallium arsenide, aluminum indium gallium phosphide, gallium nitride, gallium arsenide, indium gallium phosphide, indium gallium nitride, indium gallium arsenide, aluminum oxide (sapphire), glass, quartz, polycarbonates, polyesters, acrylics, polyurethanes, papers, ceramics, and metals (e.g., copper, aluminum, gold).
The applied coatings are then cured by either baking or exposing to light, having a wavelength effective for crosslinking the resin within the composition, depending upon the catalyst system utilized. If baked, the composition will be baked at temperatures of at least about 40° C., and more preferably from about 50-150° C. for a time period of at least about 5 seconds (preferably from about 10-60 seconds). Light exposure is the most preferred method of effecting curing of the composition because the most preferred inventive compositions are photocurable. In this curing method, light (e.g., at a wavelength of from about 100-1,000 nm (more preferably from about 240-400 nm) or at an exposure energy of from about 0.005-20 J/cm2 (more preferably from about 0.1-10 J/cm2) is used to generate the acid that catalyzes the polymerization and crosslinking reactions.
Cured coatings prepared according to the instant invention will have superior properties, and can be formulated to have thicknesses of from about 1-5,000 μm. For example, the cured coatings will have a refractive index of at least about 1.5, preferably at least about 1.56, and more preferably at least about 1.60, at wavelengths of from about 375-1,700 nm. Furthermore, cured coatings having a thickness of about 100 μm will have a percent transmittance of at least about 80%, preferably at least about 90%, and even more preferably least about 95%> at wavelengths of from about 375-1700 nm.
d are graphs demonstrating the light stability at different energy levels of a cured layer formed from the composition of Example 1;
c are graphs demonstrating the thermal stability over time of a cured layer formed from the composition of Example 1;
c are graphs demonstrating the light stability at different energy levels of a cured layer formed from the composition of Example 2:
c are graphs demonstrating the thermal stability over time of a cured layer formed from the composition of Example 2;
The following examples set forth preferred methods in accordance with the invention. It is to be understood, however, that these examples are provided by way of illustration and nothing therein should be taken as a limitation upon the overall scope of the invention.
A Curable High Refractive Index Resin Prepared with Aromatic Epoxides
The following procedure was used to a prepare a curable high refractive index coating:
Using normal spin-coating techniques, Formulation 1 could be coated onto various types of wafers (silicon, quartz, glass, etc.). A typical spin-coating and UV-curing process is described in the following:
Table 1 below shows representative film processing data specifically for these materials.
The data in Table 2 were obtained through the analysis of the above films by use of a prism coupler (Metricon 2010).
Refractive index (n) and extinction coefficient (k) data (see
A Varian Gary 500 Scan UV-Vis-NIR Dual Beam Spectrophotometer was used to measure the light transmission quality of the films. The mode used was nanometers, with a range of 200 to 3,300 nm. For the scan controls, the average time was 0.1 second, the data interval was 1.0 nm, and the scan rate was 600 nm/min. The Y mode parameters were Y min= 0.00, and Y max 100.00. The baseline parameter was zero/baseline.
The graph of
Light stability measurements were performed using a Canon PLA-501F Parallel Light Mask Aligner with xenon lamp with an average output of 2.45 mJ-sec/cm2 at 365 nm. The total exposure dose at 365 nm was 2.265 Joules. Film transmission, expressed as a percentage, is shown in
Thermal stability of the film was investigated using a Blue M Electric Company Convection Oven, Model ESP-400BC-4, and subjecting the cured films to a temperature of 100° C. for 20 days. Film transmission, expressed as a percentage, is shown in
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 2 to wafers. The spin speed was 1,000-5,000 rpm, acceleration was 4,500 rpm/sec, and the spin time was 420 seconds.
To cure the films, a Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used. Output was 2.7 mJ-sec/cm2 at 365 nm. Time was 10-12 minutes. Total exposure doses ranged from 1.2-2.7 J/cm2
Representative film processing data for these materials are shown in Table 3.
The data in Table 4 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
Light stability measurements were performed using a Canon PLA-501F Parallel Light Mask Aligner with xenon lamp, with an average output of 2.45 mJ-sec at 365 nm and a total exposure dose at 365 nm of 2265 Joules. The film transmission, expressed as a percentage, is shown in
The thermal stability of the film was investigated using a Blue M Electric Company Convection Oven, Model ESP-400BC-4, and subjecting the cured films to a temperature of 100° C. for 6 days. The film transmission, expressed as a percentage, is shown in
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 3 to wafers. Spin speed was 1,000-5000 rpm, acceleration was 4,500 rpm/sec, and spin time was 60 seconds.
To cure the films, a Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 5.
The data of Table 6 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 4 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds. The films were then baked for 6 sec at 112° C.
A Canon PLA-501F Parallel Tight Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 9 minutes, and the total exposure dose was 1.5 J/cm2.
Representative film processing data for these materials are in Table 7.
The data below were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 5 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/see, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 9.
The data of Table 10 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc). A CEE 100CB Spinner/Hotplate was used to apply Formulation 6 to wafers. The Spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 11.
The data of Table 12 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 7 to wafers. Spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 13.
The data of Table 14 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (sec
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 8 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure doses was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 15.
The data shown in Table 16 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 9 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4.500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 17.
The data of Table 18 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (sec
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 10 to wafers. Spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 7.5 minutes, and the total exposure dose was 1.2 J/cm2.
Representative film processing data for these materials are shown Table 19.
The data from Table 20 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 11 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 7.5 minutes, and the total exposure dose was 1.2 J/cm2.
Representative film processing data for these materials are shown in Table 21.
The data of Table 22 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 12 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 ml-sec/cm2 at 365 nm, and the time was 10 minutes, and the total exposure dose was 1.6 J/cm2.
Representative film processing data for these materials are shown in Table 23.
The data of Table 24 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 13 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure doses was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 25.
The data of Table 26 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply formulation 14 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 37 minutes, and the total exposure dose was 6.03 J/cm2.
Representative film processing data for these materials are shown in Table 27.
The data of Table 28 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 15 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2.0 J/cm2.
Representative film processing data for these materials are shown in Table 29.
The data of Table 30 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data of
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 16 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 14.5 minutes, and the total exposure dose was 2.3 J/cm2.
Representative film processing data for these materials are shown in Table 31.
The data of Table 32 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 17 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 1.9 J/cm2.
Representative film processing data for these materials are shown in Table 33.
The data of Table 34 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 18 to wafers. Spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 14 minutes, and the total exposure doses was 2.3 J/cm2.
Representative film processing data for these materials are shown in Table 35.
The data of Table 36 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 19 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure doses was 2 J/cm2.
Representative film processing data for these materials are shown in Table 37.
The data of Table 38 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc.). A CEE 100CB Spinner/Hotplate was used to apply Formulation 20 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 360 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 12 minutes, and the total exposure dose was 2 J/cm2.
Representative film processing data for these materials are shown in fable 39.
The data of Table 40 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (see
The transmission data of the films, shown in the graph of
The following procedure was used to prepare a curable high refractive index coating:
Using normal spin-coating and UV-curing techniques, the formulation can be coated onto various types of wafers (silicon, quartz, glass, etc). A CEE 100CB Spinner/Hotplate was used to apply formulation 21 to wafers. The spin speed was 1,000-5,000 rpm, the acceleration was 4,500 rpm/sec, and the spin time was 60 seconds.
A Canon PLA-501F Parallel Light Mask Aligner with xenon lamp was used to cure the films. The output was 2.7 mJ-sec/cm2 at 365 nm, the time was 6 minutes, and the total exposure dose was 1 J/cm2.
Representative film processing data for these materials are shown in Table 41.
The data of Table 42 were obtained through the analysis of the above films by using a prism coupler (Metricon 2010).
The refractive index (n) and extinction coefficient (k) data (See
The transmission data of the films, shown in the graph of
The present application is a continuation of U.S. patent application Ser. No. 11/235,619, entitled CURABLE HIGH REFRACTIVE INDEX RESINS FOR OPTOELECTRONIC APPLICATIONS, filed Sep. 26, 2005, which claims the priority benefit of U.S. Provisional Patent Application No. 60/614,017, filed Sep. 28, 2004, each of which is incorporated by reference herein.
Number | Date | Country | |
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60614017 | Sep 2004 | US |
Number | Date | Country | |
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Parent | 11235619 | Sep 2005 | US |
Child | 12194369 | US |