Current Limited Voltage Supply

Abstract

A current limited voltage supply including a transistor and a capacitor is provided for powering digital logic cells of an integrated circuit. The transistor is connected in a current mirror configuration, such that a constant reference current is mirrored through the transistor to create a first supply current. The transistor is coupled to the digital logic cells and the capacitor. The first supply current is used to charge the capacitor while the digital logic cells are not switching. While the digital logic cells are switching, the capacitor discharges to the digital logic cells, thereby providing the digital logic cells with sufficient energy to implement high-speed switching. The capacitor minimizes voltage fluctuations within in the current limited voltage supply, such that analog circuitry can be reliably powered from a different branch of the same current mirror circuit.

Description

FIELD OF THE INVENTION

The present invention relates to integrated circuits using standard CMOS technology. More specifically, the present invention relates to an integrated circuit having a current limited voltage supply.

RELATED ART

In conventional semiconductor integrated circuit devices, standard digital logic cells are designed to have an output driving capability sufficient to drive an output signal at a selected frequency under worst-case load conditions. As a result, relatively high switching currents will flow through the standard digital logic cells during normal operating conditions, thereby leading to high power consumption. The high switching currents flowing through the standard digital logic cells may also cause noise to be introduced to the power supply lines of the integrated circuit device, thereby adversely affecting operation of the integrated circuit device. To help alleviate these problems, variable current sources have been coupled to standard digital logic cells in order to limit the switching currents.

FIG. 1A is a circuit diagram of a conventional semiconductor integrated circuit device 100 that includes a standard digital logic cell 2a structured as a CMOS inverter, a standard digital logic cell 2b structured as a NAND gate, and a standard digital logic cell 2c structured as a NOR gate. Each of these standard digital logic cells 2a-2c is coupled to a corresponding variable current source 10a-10c. Each of the variable current sources 10a-10c includes a corresponding NMOS transistor 13a-13c, wherein the drains of these transistors 13a-13c are connected to the corresponding standard digital logic cells 2a-2c. The sources of NMOS transistors 13a-13c are connected to ground, and the gates of NMOS transistors 13a-13c are commonly connected to bias line 12. The bias line 12 receives a bias voltage V_B from a bias voltage generating circuit, which includes a constant current source 14 and an NMOS transistor 15. The drain and gate of NMOS transistor 15 are connected to the bias line 12, and the source of NMOS transistor is connected to ground. The constant current source 14 causes a constant bias current I_B to flow through NMOS transistor 15, such that the bias voltage V_B is equal to the gate-to-source voltage V_GS of NMOS transistor 15. This bias voltage V_B is applied to the gates of NMOS transistors 13a-13c, thereby limiting the current flowing from each of the standard digital logic cells 2a-2c to ground. The bias voltage V_B is set to a value that attempts to limit power consumption and noise within standard digital logic cells 2a-2c.

In order to achieve lower DC current consumption within device 100 (as may be required by certain applications), the variable current sources 10a-10c must increasingly limit the current flow from the standard cells 2a-2c to ground. However, if the current flowing from each of the standard digital logic cells 2a-2c to ground is limited too much, then the circuitry present within the standard digital logic cells 2a-2c may not operate correctly (i.e., may not be capable of switching at the desired frequency). Thus, the effectiveness of variable current sources 10a-10c is limited. Semiconductor integrated circuit device 100 is described in more detail in U.S. Pat. No. 5,225,720 to Kondoh et al. (hereinafter, the Kondoh '720 Patent).

Note that the Kondoh '720 Patent describes alternate embodiments for the variable current source 10a, which are briefly described below.

FIG. 1B is a circuit diagram which illustrates one alternate embodiment described by the Kondoh '720 Patent. In this alternate embodiment, a variable current source is provided at the Vdd power supply side of each standard digital logic cell (rather than at the ground side of each standard digital logic cell). For example, a variable current source 10a′, which comprises PMOS transistor 41, is interposed between the Vdd power supply 7 and the standard digital logic cell 2a. The gate of PMOS transistor 41 is connected to receive a bias voltage V_B, which is provided by bias voltage generating circuit 50. Bias voltage generating circuit 50 includes PMOS transistor 51 and constant current source 14. The bias voltage V_B limits the current flowing from the Vdd supply voltage 7 to the standard digital logic cell 2a. Again, the bias voltage V_B is set to a value that attempts to limit power consumption and noise within the standard digital logic cell 2a. However, the circuit of FIG. 1B exhibits the same deficiencies as the circuit of FIG. 1A.

FIG. 1C is a circuit diagram which illustrates another embodiment described by the Kondoh '720 Patent. In this alternate embodiment, a variable current source is provided at both the Vdd power supply side and the ground side of each standard digital logic cell. For example, the variable current sources 10a and 10a′ are both coupled to the standard digital logic cell 2a. The gate of PMOS transistor 41 is biased by a first bias voltage V_B1 provided on bias line 12′, and the gate of NMOS transistor 13 is biased by a second bias voltage V_B2 provided on bias line 12. The bias voltages V_B1 and V_B2 are provided by bias voltage generating circuit 60, which includes constant current source 14, NMOS transistors 15 and 61 and PMOS transistor 51. The bias voltages V_B1 and V_B2 limit the current flowing through the standard digital logic cell 2a. Again, the bias voltages V_B1 and V_B2 are set to values that limit the power consumption and noise within the standard digital logic cell 2a. However, the circuit of FIG. 1C exhibits the same deficiencies as the circuit of FIG. 1A.

It would therefore be desirable to have a method and structure for limiting power consumption and noise within a standard digital logic cell, without preventing the proper operation of the standard digital logic cell.

SUMMARY

Accordingly, the present invention provides a current limited voltage supply, which includes a transistor and a capacitor, for powering digital logic cells of an integrated circuit. The transistor is connected in a current mirror configuration with a bias circuit, such that a constant reference current is mirrored through the transistor to provide a limited supply current. The transistor is coupled to the digital logic cells and the capacitor. The limited supply current is used to charge the capacitor while the digital logic cells are not switching. However, while the digital logic cells are switching, the capacitor discharges to the digital logic cells, thereby providing the digital logic cells with sufficient energy to implement high-speed switching. The capacitor also minimizes voltage fluctuations within in the current limited voltage supply, such that analog circuitry can be reliably powered from a different branch of the same current mirror circuit.

The present invention will be more fully understood in view of the following description and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B and 1C are circuit diagrams of conventional semiconductor integrated circuit devices having variable current sources coupled to standard digital logic cells.

FIG. 2 is a circuit diagram of a semiconductor integrated circuit chip that includes a current limited voltage supply in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION

FIG. 2 is a circuit diagram of a semiconductor integrated circuit (IC) chip 200 in accordance with one embodiment of the present invention. IC chip 200 includes a current limited voltage supply 210, a bias circuit 220, analog circuit 230, digital cell supply line 240 and standard digital logic cells 250₁-250_N. Digital logic cells 250₁-250_N may include, for example, inverters and/or logic gates, which have output signals that switch between logic states in response to one or more input signals. Each of the digital logic cells 250₁-250_N is coupled between the digital cell supply line 240 and ground. As described in more detail below, the digital supply line 240 receives a supply current I_D from the current limited voltage supply 210. A voltage V_D is developed on the digital supply line 240.

In accordance with one embodiment, current limited voltage supply 210 includes a P-channel MOS transistor 211 and an integrated capacitor 212. The source of P-channel MOS transistor 211 is coupled to the V_DD (positive) voltage supply rail, the drain of P-channel MOS transistor 211 is coupled to the digital supply line 240, and the gate of P-channel MOS transistor 211 is coupled to receive a bias voltage V_BIAS from bias circuit 220. Capacitor 212 includes an electrode connected to the drain of P-channel MOS transistor 211 (and the digital supply line 240), and a counter-electrode connected to ground.

In the described embodiment, bias circuit 220 includes P-channel MOS transistors 221-222, N-channel MOS transistors 223-224 and constant current source 225. Constant current source 225 causes a reference current I_REF to flow through N-channel MOS transistor 224. N-channel MOS transistors 223 and 224 are connected in a current mirror configuration, such that the reference current I_REF is mirrored to N-channel MOS transistor 223 as the reference current I_REF1. Note that the relationship between the reference currents I_REF and I_REF1 is determined by the relative sizes of N-channel MOS transistors 223 and 224, in a manner understood by those of ordinary skill in the art. For example, if the N-channel MOS transistors 223 and 224 are identical, then the reference currents I_REF and I_REF1 will be equal.

The reference current I_REF1 also flows through P-channel MOS transistor 221, which is connected in series with N-channel MOS transistor 223. P-channel MOS transistor 221 is connected in a current mirror configuration with the P-channel MOS transistor 211 of current limited voltage supply 210, such that the reference current I_REF1 is mirrored to P-channel MOS transistor 211 as the source current I_S. Again, the relationship between the reference current I_REF1 and the source current I_S is determined by the relative sizes of P-channel MOS transistors 221 and 211. Note that the bias voltage V_BIAS developed on the gate of P-channel MOS transistor 211 is equal to the V_DD supply voltage minus the gate-to-source voltage V_GS of P-channel MOS transistor 221.

P-channel MOS transistor 221 is also connected in a current mirror configuration with the P-channel MOS transistor 222, such that the reference current I_REF1 is mirrored to P-channel MOS transistor 222 as the analog supply current I_A. Again, the relationship between the reference current I_REF1 and the analog supply current I_A is determined by the relative sizes of P-channel MOS transistors 221 and 222. The DC analog supply current I_A is provided to analog circuitry 230 on the same IC chip 200. Analog circuitry 230 may include, for example, current and voltage references, amplifiers, comparators, oscillators, active filters, analog-to-digital converters, digital to analog converters, and other circuits apparent to those of ordinary skill in the art.

Returning now to current limited voltage supply 210, bias circuit 220 limits the digital cell source current I_S to a predetermined value, which is selected in view of the characteristics of digital logic cells 250₁-250_N. More specifically, the digital cell source current I_S is selected to minimize the DC current consumption within digital logic cells 250₁-250_N, while allowing for proper operation of these digital logic cells. The voltage (V_D) developed on the drain of P-channel MOS transistor 211 charges capacitor 212, thereby causing capacitor 212 to store energy that will subsequently be supplied to digital logic cells 250₁-250_N. In the described embodiment, the voltage developed on the drain of P-channel MOS transistor 211 is approximately equal to the V_DD supply voltage.

Logic transitions in the digital logic cells 250₁-250_N will tend to introduce current spikes in the supply current I_S. Such current spikes, left unmitigated, may introduce noise in the current mirror circuitry present in bias circuit 220. Such noise may adversely affect the operation of analog circuit 230.

In accordance with one embodiment of the present invention, capacitor 212 reduces spikes in the supply current I_S, which could otherwise result from switching (i.e., logic transitions) within digital logic cells 250₁-250_N. More specifically, capacitor 212 stores energy (i.e., a charging current I_C flows into capacitor 212, thereby charging this capacitor) in the intervals between logic transitions in digital logic cells 250₁-250_N. During logic transitions in the digital logic cells 250₁-250_N, capacitor 212 discharges (i.e., a discharging current I_C flows out of capacitor 212 to digital supply line 240), thereby providing the energy necessary for the digital logic cells 250₁-250_N to switch rapidly, and reducing spiking of the supply current I_S. In this manner, capacitor 212 compensates for low DC current within digital logic cells 250₁-250_N during fast logic transitions, thereby assuring that digital logic cells 250₁-250_N operate with a fast transient time and low average power consumption.

Note that by reducing the spiking of the supply current I_S, capacitor 212 also reduces voltage fluctuation on supply line 240 during logic transitions within digital logic cells 250₁-250_N.

In accordance with one embodiment, the size of capacitor 212 is selected in view of the current I_S supplied by P-channel MOS transistor 211 and the width-to-length (W/L) ratios of the transistors in digital logic cells 250₁-250_N, as these parameters will define the current spiking characteristics of the supply current I_S. For example, during normal operation of digital logic cells, the switching of digital logic cells 250₁-250_N may result in a current (I_D) increase of 100 microAmps during a period of 20 nanoseconds. In this case, capacitor 212 discharges to supply this current. The size of capacitor 212 will determine the voltage fluctuation of supply line 240 under these conditions. For example, to limit the voltage fluctuation to 100 milliVolts, capacitor 212 should have a capacitance of 20 pico-Farads. Note that this determination is made using the equation CV=Q, wherein C is the capacitance of capacitor 212 (in Farads), V is the voltage fluctuation on supply line 240 (in Volts), and Q is the required charge supplied by capacitor 212 during the switching transistion of digital logic cells 250₁-250_N (in coloumbs). Note that the required charge Q is equal to current increase caused by the switching of digital logic cells 250₁-250_N (in Amps) multiplied by time (in seconds).

Although the invention has been described in connection with several embodiments, it is understood that this invention is not limited to the embodiments disclosed, but is capable of various modifications, which would be apparent to one of ordinary skill in the art. Accordingly, the present invention is only limited by the following claims.

Claims

1. An integrated circuit comprising: a plurality of digital logic cells that undergo logic transitions during normal operation of the integrated circuit;a supply line coupled to the digital logic cells, wherein the supply line provides a supply current to the digital logic cells during normal operation of the integrated circuit;a current limited voltage supply comprising a transistor coupled between a first voltage supply terminal and the supply line, and a capacitor coupled to the supply line, wherein the capacitor supplies a discharging current to the supply line while the digital logic cells undergo logic transitions.

2. The integrated circuit of claim 1, wherein the capacitor receives a charging current from the transistor during periods while the digital logic cells do not undergo logic transitions.

3. The integrated circuit of claim 1, wherein the transistor is a P-channel MOS transistor, and the first voltage supply terminal provides a positive supply voltage.

4. The integrated circuit of claim 1, wherein the capacitor is further coupled to a second voltage supply terminal.

5. The integrated circuit of claim 4, wherein the second voltage supply terminal is a ground supply terminal.

6. The integrated circuit of claim 1, further comprising a bias circuit coupled to the transistor of the current limited voltage supply, wherein the bias circuit applies a bias voltage to the transistor to limit a first current through the transistor.

7. The integrated circuit of claim 6, wherein the bias circuit comprises a current mirror circuit that translates a reference current to the transistor.

8. The integrated circuit of claim 7 further comprising an analog circuit, wherein the bias circuit further comprises a current mirror circuit that translates the reference current to the analog circuit.

9. An integrated circuit comprising: a current mirror circuit that translates a reference current into a first supply current through a first transistor;a plurality of digital logic cells coupled between a drain of the first transistor and a ground supply terminal; anda capacitor coupled between the drain of the first transistor and the ground supply terminal.

10. The integrated circuit of claim 9, wherein the digital logic cells undergo logic transitions during normal operation of the integrated circuit, wherein the capacitor is charged from the first supply current when the digital logic cells are not undergoing logic transitions, and wherein the capacitor is discharged through the digital logic cells while the digital logic cells are undergoing logic transitions.

11. The integrated circuit of claim 9, further comprising an analog circuit, wherein the current mirror circuit further translates the reference current into a second supply current through a second transistor, wherein the second supply current is provided to the analog circuit.

12. A method of operating an integrated circuit comprising: generating a first supply current by mirroring a constant reference current through a first transistor;powering digital logic cells of the integrated circuit from the first supply current, wherein the digital logic cells undergo logic transitions during normal operation of the integrated circuit;charging a capacitor from the first supply current during a first period, wherein the digital logic cells are not undergoing logic transitions during the first period; anddischarging the capacitor to the digital logic cells during a second period, wherein the digital logic cells are undergoing logic transitions during the second period.

13. The method of claim 12, further comprising: generating a second supply current by mirroring the constant reference current through a second transistor; andpowering analog circuitry of the integrated circuit from the second supply current.