This application is based on and incorporates herein by reference Japanese Patent Application No. 2005-317459 filed on Oct. 31, 2005.
The present invention relates to a current sensor and a method of manufacturing the current sensor.
A current sensor has been proposed that detects a current based on characteristics of a Hall element, which is a semiconductor element. When a control current flows through the Hall element and a magnetic field is applied to the Hall element in a direction perpendicular to the control current flow direction, a Hall effect occurs and a Hall voltage is induced across the Hall element.
When a current to be detected flows through a conductor, the magnetic field is generated around the conductor in a direction perpendicular to the detected current flow direction. The magnetic field changes proportional to the amount of the detected current. Therefore, the detected current can be measured by the Hall element placed near the conductor. Specifically, the detected current can be measured based on the Hall voltage generated by the Hall element that is placed near the conductor such that the control current flow direction is parallel to the detected current flow direction.
Typically, the Hall element and peripheral circuits are integrated into a Hall IC. The use of the Hall IC reduces the size and manufacturing cost of the current sensor.
In the current sensor using the Hall IC, a portion of the magnetic flux induced around the conductor by the current leaks so that the whole magnetic field is not applied to the Hall IC. As a result, the current sensor may not accurately detect the current.
To overcome the above problem, a current sensor with a magnetic core has been proposed and used in practice. The magnetic core is made of a magnetic material such as permalloy and concentrates the magnetic flux. For example, in a current sensor disclosed in JP-2002-148284A, the magnetic core is installed in a case by insert molding technology and then a circuit board having the Hall IC is placed in the case.
In such a current sensor having the magnetic core, the positional relationship between the magnetic core and the Hall IC affects the strength of the magnetic field around the Hall element. Therefore, the current sensor requires high assembly precision. Even if the requirement for the high assembly precision is met, the positional relationship may change over time due to, for example, change in the ambient temperature. As a result, the current sensor may not accurately detect the current.
The current sensor needs to detect a small current, i.e., needs high sensitively, because recent development trends are toward low power consumption. In the current sensor, the Hall IC is placed in a gap of the magnetic core and the magnetic flux flowing through the magnetic core is applied to the Hall element of the Hall IC. The sensitivity of the current sensor can be increased by reducing a gap separation distance in order to increase the magnitude of the magnetic flux applied to the Hall IC.
However, since the Hall element is integrated in the Hall IC, the gap separation distance may be limited to the thickness of the Hall IC. Further, when the Hall IC is placed in the gap with the reduced separation distance, the assembly precision may need to be further improved.
In view of the above-described problem, it is an object of the present invention to provide a current sensor that includes a magnetic core having a gap with a reduced separation distance therein and includes a Hall element placed in the gap to be accurately positioned with respect to the magnetic core, and to provide a method of manufacturing the current sensor.
A current sensor includes a semiconductor substrate, a ring shaped magnetic core having a center opening and a gap and provided to a surface of the substrate, and a Hall element placed in the gap of the magnetic core.
In the current sensor, a control current for operating the Hall element flows in a direction perpendicular to the surface of the substrate, i.e., flows in a thickness direction of the substrate. When a current to be detected flows in a direction along an axis of the magnetic core, a magnetic field induced by the detected current is concentrated by the magnetic core. Since the magnetic field is perpendicular to the flow direction of the control current, a Hall voltage depending on the amount of the detected current is induced across the Hall element. Thus, the current sensor measures the detected current based on the Hall voltage.
The magnetic core and the Hall element are formed to the substrate by semiconductor manufacturing techniques. Therefore, the Hall element can be placed in the gap to be accurately positioned with respect to the magnetic core and the gap can have a reduced separation distance. Thus, the current sensor can have an increased sensitivity and accurately measure the detected current.
The above and other objectives, features and advantages of the present invention will become more apparent from the following detailed description made with reference to the accompanying drawings. In the drawings:
Referring to
The center hole 10b penetrates through the substrate 10 in a thickness direction of the substrate 10. A conductor CL through which a current If to be detected flows is inserted through the center hole 10b. The magnetic core 11 is made of a magnetic material such as permalloy and formed to the surface 10a to surround the center hole 10b. The Hall element 12 is placed in the gap 11a such that a control current Ib shown in
As shown in
For example, when the substrate 10 is a P-type semiconductor substrate, the Hall element 12 is constructed such that an N-type well layer 21 is created in the substrate 10 and is divided into first and second regions by a P-type well layer 22. As shown in
An input terminal S for the control current Ib is formed on a surface of the first region of the N-type well layer 21 to form ohmic contact with the N-type well layer 21. An output terminal G for the control current Ib is formed on a surface of the second region of the N-type well layer 21 to form ohmic contact with the N-type well layer 21. Detection terminals V1, V2 used to detect the Hall voltage Vh are formed on the surface of the first region of the N-type well layer 21 to form ohmic contact with the N-type well layer 21. As shown in
When the control current Ib is supplied to the Hall element 12 through the wire bonding pads 13, 14, the control current Ib flows in the N-type well layer 21 along the P-type well layer 22. Specifically, in the N-type well layer 21, the control current Ib flows in a downward direction perpendicular to the surface 10a first. Then, the control current Ib flows in a direction parallel to the surface 10a and then flows in an upward direction perpendicular to the surface 10a.
When the control current Ib flows in the N-type well layer 21 in the direction perpendicular to the surface 10a and the magnetic field T is applied to the Hall element 12 in the direction parallel to the surface 10a, the Hall elect occurs and the Hall voltage Vh is induced across the Hall element 12 in a direction perpendicular to the flow of the control current Ib. The Hall voltage Vh is detected as a voltage between the detection terminals V1, V2 and the magnetic field T is measured based on the Hall voltage Vh.
When the detected current If flows through the conductor CL, a magnetic field is induced around the conductor CL. The magnetic core 11 concentrates the induced magnetic field to produce the magnetic field T. Therefore, the detected current If can be measured by detecting the Hall voltage Vh.
Referring to
First, as shown in
Next, as shown in
Then, as shown in
Next, as shown in
Thus, the current sensor 100 is finished. Actually, the current sensor 100 is molded with resin in post-process to have an increased structural strength and resistance to rust.
As described above, the current sensor 100 is manufactured by semiconductor manufacturing techniques. Therefore, the Hall element 12 can be placed in the gap 11a to be accurately positioned with respect to the magnetic core 11.
As shown in
The inventor has tested the current sensor 100 shown in
As described above, in the current sensor 100 according to the first embodiment, the magnetic core 11 and the Hall element 12 are formed to the substrate 10. The magnetic core 11 is formed by depositing the magnetic material in the trench 10c formed to the substrate 10. In such an approach, the position of the magnetic core 11 is determined by the position of the trench 10c so that the Hall element 12 can be accurately positioned with respect to the magnetic core 11.
Since the Hall element 12 is formed in the substrate 10, the gap 11a, where the Hall element 12 is placed, can have a reduced separation distance. The gap 11a with the reduced separation distance improves the sensitivity of the current sensor 100.
Referring to
First and second connection terminals 31, 32 are formed on the surface 30a of the substrate 30. As shown in
As shown in
Referring to
A difference between the manufacturing process for the current sensor 100 and a manufacturing process for the current sensor 200 is that the manufacturing process for the current sensor 200 includes a step for forming the conductive member 33 instead of the step for forming the center hole 10b. Therefore, only the step for the forming the conductive member 33 is described below.
First, as shown in
Next, as shown in
Then, as shown in
Then, as shown in
Thus, the conductive member 33 having the end portions 33a, 33c and the middle portion 33b is finished. After the conductive member 33 is finished, a trench 30c is formed such that the first and second connection terminals 31, 32 are positioned on the opposite side of the trench 30c. The magnetic core 11 is formed by depositing the magnetic material in the trench 30c.
When the detected current If flows between the first and second connection terminals 31, 32 through the conductive member 33, the detected current If flows perpendicular to the surface 30a inside the magnetic core 11. Therefore, the current sensor 200 can measure the detected current If.
As described above, in the current sensor 200 according to the second embodiment, the conductive member 33 for electrically connecting the first and second connection terminals 31, 32 is formed in the substrate 30 to pass under the magnetic core 11. The conductive member 33 has the first and second end portions 33a, 33c extending perpendicular to the surface 30a and the middle portion 33b extending parallel to the surface 30a.
When the detected current If is very small, not only a positional relationship between the magnetic core 11 and the Hall element 12, but also a positional relationship between the magnetic core 11 and the conductive member 33 affects accuracy in measurement. Since the conductive member 33 is formed in the substrate 30, the conductive member 33 can be accurately positioned with respect to the magnetic core 11. Thus, even if the detected current If is very small, the current sensor 200 can accurately measure the detected current If. The current sensor 200 can have a small size by reducing the cross section of the conductive member 33 in accordance with the amount of the detected current If.
Since the conductive member 33 is made of aluminum, the conductive member 33 can be easily formed and have excellent conductivity.
The embodiments described above may be modified in various ways. For example, the conductive member 33 may have only the first end portion 33a. In this case, the first end portion 33a extends to a back side of the substrate 30 and the second connection terminal 32 is formed on the back side of the substrate 30. In such an approach, the conductive member 33 can be easily formed in the substrate 30 so that the current sensor 200 can be easily manufactured.
The conductive member 33 may be made of conductive material other than aluminum.
The magnetic core 11 having the same shape as the trench 10c (30c) may be formed in advance. In this case, the magnetic core 11 is bonded in the trench 10c (30c) as shown in
The Hall element 12 may be a horizontal Hall element that is formed in the substrate 10 (30) such that the control current Ib flows in the thickness direction of the substrate 10 (30), i.e., in the direction perpendicular to the surface 10a (30a) of the substrate 10 (30). In short, various types of Hall elements can be used as the Hall element 12, as long as the control current Ib flows in the thickness direction of the substrate 10 (30).
Such changes and modifications are to be understood as being within the scope of the present invention as defined by the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
2005-317459 | Oct 2005 | JP | national |
Number | Name | Date | Kind |
---|---|---|---|
4823075 | Alley | Apr 1989 | A |
4843310 | Friedl | Jun 1989 | A |
5023684 | Tsunoda | Jun 1991 | A |
5070317 | Bhagat | Dec 1991 | A |
5874848 | Drafts et al. | Feb 1999 | A |
5990533 | Hasegawa | Nov 1999 | A |
6054329 | Burghartz et al. | Apr 2000 | A |
6686730 | Marasch et al. | Feb 2004 | B2 |
6791313 | Ohtsuka | Sep 2004 | B2 |
6817760 | Mende et al. | Nov 2004 | B2 |
7084617 | Ozaki et al. | Aug 2006 | B2 |
20030001559 | Goto et al. | Jan 2003 | A1 |
20060226826 | Teppan | Oct 2006 | A1 |
Number | Date | Country |
---|---|---|
A-5-196651 | Aug 1993 | JP |
A-6-82486 | Mar 1994 | JP |
A-6-130088 | May 1994 | JP |
A-7-218552 | Aug 1995 | JP |
A-2002-148284 | May 2002 | JP |
Number | Date | Country | |
---|---|---|---|
20070096717 A1 | May 2007 | US |