DBR comprising GaP, and use thereof in a semiconductor resonant cavity device

Description

REFERENCE TO RELATED APPLICATION

[0001] This application claims priority benefits to the European Patent Application EP 01203678.6 filed on Sep. 27, 2001. This application incorporates by reference in its entirety European Patent Application EP 01203678.6 filed on Sep. 27, 2001.

TECHNICAL FIELD OF THE INVENTION

[0002] The present invention relates to a special type of Distributed Bragg Reflectors (DBRs).

[0003] The present invention also relates to semiconductor resonant cavity devices for emitting or absorbing light, such as semiconductor light emitting diodes, lasers and resonant detectors, and, more particularly, to resonant cavity light-emitting diodes (RCLEDs), also known as microcavity light-emitting diodes (MCLEDs), comprising such a special type of DBR of which the top layer is intended to be used as contact layer.

BACKGROUND OF THE INVENTION

[0004] Emission in the visible wavelength is useful for car tail and brake lights, traffic lights, full colour LED displays, scanners, printers, high definition television and for short-haul optical fibre communication, which has a low absorption at 650 nm. The optical output power that could be extracted out of a conventional light emitting diode is limited to 2% because of total internal reflection at the semiconductor-air interface. This limits the use of a conventional LED.

[0005] Recently, there has been an increased interest in RCLEDs, and specifically red emitting RCLEDs based on indium aluminium gallium phosphide (InAlGaP) material.

[0006] The working principle of an RCLED is based on Fabry-Perot resonance, an active region placed inside a cavity formed by two parallel reflective mirrors. The mirrors are typically quarter-wave (λ/4) semiconductor or dielectric distributed Bragg reflectors (DBRs). For an RCLED, one DBR has a reflectance (R) of near 100% at the Bragg wavelength, while the other DBR has a lower reflectance, preferably R<90%. That way, light is emitted from the RCLED at the side of the mirror with the lowest reflectance.

[0007] An RCLED structure is for example described in P. Modak et al., “5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates”, Electronics Letters, Mar. 15, 2001, Vol. 37 No.6, and in P. Modak et al., “InAlGaP microcavity LEDs on Ge-substrates”, Journal of Crystal growth 221 (2000), pp.668-673. A stack of bottom DBR mirrors having a plurality of alternating layers with alternating refractive indexes, is grown on a substrate. For a 638 nm emitting RCLED, this stack of bottom DBR mirrors e.g. is a 26.5 period DBR, comprising alternating layers of silicon-doped aluminium gallium arsenide (Al0.55Ga0 45As), 45.7 nm thick, and aluminium arsenide (AlAs), 51.6 nm thick, so that all layers have an optical thickness of one quarter wavelength. An active region placed in a cavity, surrounded by spacer layers, is provided on top of the stack of bottom DBR mirrors. The spacer layers may for example be aluminium gallium indium phosphide ((Al0.7Ga0.3)0 52In0.48P), 86.6 nm thick. The active region may for example be three 6 nm thick (Al0 1Ga0 9)0 43In0 57P quantum wells embedded in (Al0.7Ga0 3)0 52In0.48P barrier material. On top of the cavity, a stack of top DBR mirrors is again provided, having a plurality of alternating layers with alternating refractive indexes. This stack of top DBR mirrors e.g. is a 5 period DBR, comprising alternating layers of zinc-doped Al0 95Ga0 05As, 50.9 nm thick, and Al0 55Ga0 45As, 45.7 nm thick. To improve current spreading, a 3 μm thick Al0.55Ga0 45As layer is grown on top of the top DBR mirror, followed by a 10 nm highly p-doped gallium arsenide (GaAs) contact layer, which also prevents the Al0 55Ga0 45As layer from oxidising. Instead of a 3 μm thick Al0 55Ga0 45As current spreading layer and a 10 nm thick GaAs contact layer, a few μm thick gallium phosphide (GaP) layer can be used. Such a GaP layer does not oxidise, is transparent for the wavelength under consideration and can be highly doped. A thick current spreading layer as described in this document has the disadvantage that it is penalising the mirror properties of the top DBR mirror, because no use can be made of a high difference in refractive index between the top DBR mirror/air interface. Nevertheless a thick current spreading layer is typically used, because the thicker the layer, the lower its resistance and thus the better the current spreading that can be obtained.

[0008] A conventional RCLED has several advantages, such as emitting light perpendicular to the surface of the die, a highly directional beam and the possibility of fabrication of two-dimensional arrays. They do not require complex and expensive processing.

[0009] While conventional RCLEDs have several advantages, they also have several disadvantages with regard to emission in the visible spectrum, which disadvantages are primarily due to oxidation problems of the AlxGa1−xAs spreading layer, and absorption of the emitted light by the GaAs contact layer. The conventional RCLEDs furthermore have disadvantages in that the GaAs contact layer needs to be highly doped in order to provide a better contact. Such high doping can be achieved at growth temperatures around 550° C.-600° C. However, at these temperatures, the quality of the GaAs contact layer rapidly degrades.

[0010] Thus, there is a need for developing visible light emitting diodes, especially resonant cavity light emitting diodes (RCLEDs) for use in high brightness LED applications such as car tail and brake lights, 2-D array for printers and POF (plastic optical fibre) communication at 650 nm, that include a highly doped contact layer, thereby maintaining structural integrity of the light emitting diode device.

[0011] U.S. Pat. No. 5,923,696 describes a VCSEL with an active region between a bottom DBR and a top DBR. A one-half wavelength contact layer including a gallium phosphide material is disposed on top of the top DBR.

SUMMARY OF THE INVENTION

[0012] It is a purpose of the present invention to provide a new and improved resonant cavity device, especially a resonant cavity light emitting diode that is capable of emission in the visible spectrum, or a resonant detector, and that overcomes the drawbacks mentioned above.

[0013] The above objectives are accomplished by a device and a method according to the present invention.

[0014] According to a first embodiment of the present invention, a conductive or semiconductive Distributed Bragg Reflector (DBR) is provided for reflecting radiation with a wavelength λ, including at least one mirror pair, each mirror pair comprising a bottom layer and a top layer, the top layer of one mirror pair comprising gallium phosphide (GaP) and having an optical thickness of substantially an odd multiple of λ/4. Usually, the top layer consists essentially of gallium phosphide. In addition to GaP, the layer may be doped, e.g. with magnesium, beryllium or zinc. The optical thickness of a layer of a DBR is the physical thickness of that layer multiplied by its refractive index. A conductive or semiconductive DBR is meant to be a DBR through which current can be conducted in the mirroring direction of the DBR. In the prior art, mirror pairs of DBR's often comprise a conductive layer and an isolating layer, such that light is mirrored, but current cannot flow through the DBR in a direction perpendicular to the mirror layers. An example of such a DBR with insulating layers is given in e.g. European Patent Application EP-0549167, where the DBR comprises alternating layers of a semiconductor material (GaP) and a dielectric material (borosilicate glass or BSG). The DBR is thus electrically isolated; no current can flow through the DBR in a direction perpendicular to the mirror layers. A device in which current flows perpendicular to the layers is often called a “current perpendicular to plane” or CPP device.

[0015] According to a second embodiment of the present invention, a new and improved resonant cavity device for emitting or absorbing light is provided that utilises a gallium phosphide (GaP) layer as part of a DBR and at the same time as a contact layer. The structure may be capable of being easily p-type doped with a material such as magnesium or zinc without damage to the underlying layer structures. The DBR is a conductive or semiconductive DBR as defined above.

[0016] As the GaP layer is used as a contact layer, the DBR underneath has to be conductive or semiconductive, for example a DBR according to the first embodiment of the present invention.

[0017] The resonant cavity device for emitting or absorbing light with a wavelength λ, according to the present invention, comprises a first mirror and a second mirror with an active region located therebetween, the second mirror comprising a stack of Distributed Bragg Reflectors (DBR) including at least one mirror pair, the mirror pair having at least a top layer and a bottom layer, the top layer being most remote from the first mirror, the top layer being composed of gallium phosphide (GaP) and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4, and being intended to be used as a contact layer. The optical thickness of a layer of a DBR is the physical thickness of that layer multiplied by its refractive index. Usually, the top layer consists essentially of gallium phosphide. In addition to GaP, the layer may be doped, e.g. with magnesium, beryllium or zinc. The second mirror is a conductive mirror.

[0018] The optical thickness of the GaP layer in the present invention is of importance, as the GaP layer is part of the second DBR mirror, and thus will contribute to the reflectivity of that mirror.

[0019] The device may be e.g. an RCLED. The light emitted by the RCLED preferably has a wavelength λ between 590 and 700 nm, and more preferably between 630 and 670 nm, which is red light. Emitting shorter wavelengths is also possible, but more difficult, because the range of compositions that can be used for the DBR is limited.

[0020] The substantially λ/4 or substantially odd multiple of λ/4 thickness of the GaP layer may include a deviation of at most 15% from that thickness which is an exact odd multiple of λ/4, preferably a deviation between 0% and 10% and most preferably a deviation of less than 1%. For an RCLED, the first mirror has a high reflectivity (more than 90%, preferably more than 95%), while the second mirror has a lower reflectivity (between 43% and 90%, preferably between 50% and 70%). The reflectivity of the second mirror may be optimised for maximum efficiency of the RCLED. An advantage of an RCLED, compared to a conventional LED, is that more light can be extracted out of an RCLED, due to the presence of the mirrors, which make light to constructively interfere. For a laser, both the first mirror and the second mirror need to have a reflectivity of greater than 99%.

[0021] A resonant cavity device according to the present invention may furthermore comprise a supporting substrate on which the first mirror is disposed. Such a supporting substrate may comprise semiconductor material, for example including GaAs or Ge. Alternatively, the resonant cavity device can be grown on a GaAs or Ge substrate, after which this substrate is removed and the device is transferred onto another substrate.

[0022] The first mirror may comprise a metal film located over a phase matching layer, or a stack of DBR including pairs of alternating layers. Said alternating layers are preferably based on n-type doped AlGaAs and/or InAlGaP. There are preferably from one to fifty pairs of layers in the DBR, more preferably more than 10 pairs, and most preferrably more than 20 pairs. The n-type doping is preferably of the order of 1e18 cm−3.

[0023] The layers of the first mirror have a substantially λ/4 or a substantially odd multiple of λ/4 thickness. This thickness of the layers may include a deviation of at most 15% from that thickness which is an exact odd multiple of λ/4, preferably a deviation between 0% and 10% and most preferably a deviation between 2% and 3%. Such a deviation in thickness from λ/4 leads to a detuned DBR, which has some advantages, as will be shown later.

[0024] The cavity of the resonant cavity device preferably comprises InAlGaP or AlGaAs material. The active region in the cavity comprises one or a plurality of quantum well layers or a bulk active layer.

[0025] The second mirror may include more than one mirror pair, whereby all layers except the top layer comprise AlGaAs. The top mirror should preferably not comprise InAlGaP, because p-doped InAlGaP is highly resistive. The second mirror is preferably p-type doped with a doping level of the order of 1e18 cm−3 to 2e18 cm−3, except for the top GaP layer which is preferably more highly doped: e.g. a p-doping level higher than 5e18 cm−3, such as 3e19 cm−3. This top GaP layer with a higher doping level allows a better ohmic contact. Only the top part of the GaP layer needs to be highly doped. The GaP top layer may be doped e.g. with Magnesium, Zinc and/or Beryllium. The second mirror is a conductive or semiconductive DBR.

[0026] The present invention also provides a method of manufacturing a resonant cavity device for emitting or absorbing light with a wavelength λ, comprising the steps of:

[0027] providing a supporting substrate having a surface,

[0028] forming a first mirror on the surface of the supporting substrate,

[0029] forming a second mirror with an active region located between the first and second mirrors, the second mirror comprising a stack of Distributed Bragg Reflectors (DBR) including at least one mirror pair, the mirror pair comprising at least a top and a bottom layer, the top layer, being most remote from the first mirror, being composed of GaP and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4, and being intended to be used as a contact layer. The optical thickness of a layer of a DBR is the physical thickness of that layer multiplied by its refractive index.

[0030] The step of forming a first mirror preferably includes growing a stack of DBR including pairs of alternating layers on the semiconductor substrate. The layers of the first mirror have a substantially λ/4 or a substantially odd multiple of λ/4 thickness. This thickness of the layers may include a deviation of at most 15% from that thickness which is an exact odd multiple of λ/4, preferably a deviation between 0% and 10% and most preferably a deviation between 2% and 3%.

[0031] It is possible to form a resonant cavity device comprising a first mirror, an active region, a second mirror and a GaP top layer on a first substrate such as e.g. GaAs or Ge, separate the resonant cavity device from the first substrate, and thereafter transfer it to a second substrate such as e.g. GaP. The second mirror is a conductive or semiconductive DBR as defined above.

[0032] Alternatively, the present invention also provides a method of manufacturing a resonant cavity light-emitting device for emitting light with a wavelength λ, comprising the steps of:

[0033] providing a supporting substrate having a surface,

[0034] forming a second mirror with an active region located between the supporting substrate and the second mirror, the second mirror comprising a stack of Distributed Bragg Reflectors including at least one mirror pair, the mirror pair comprising a top and a bottom layer, the top layer, being most remote from the supporting substrate, being composed of GaP and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4, and being intended to be used as a contact layer,

[0035] separating the active region and the second mirror from the supporting substrate, and

[0036] transferring the active region and the second mirror onto a device having a first mirror.

[0037] The active region may be part of a cavity. The cavity may e.g. be disposed on an intermediate layer disposed on the supporting substrate, such intermediate layer being an etch stop layer. This etch stop layer can then be etched away for separating the cavity and second mirror from the substrate.

[0038] The step of providing a supporting substrate in both methods preferably includes providing a semiconductor substrate, such as e.g. a GaAs or Ge substrate.

[0039] The step of forming a second mirror comprising a stack of Distributed Bragg Reflectors with a top layer composed of GaP having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4 in both methods includes providing a top layer with a deviation of at most 15% from that optical thickness of λ/4. The optical thickness of a layer of a DBR is the physical thickness of that layer multiplied by its refractive index. The second mirror is a conductive or semiconductive DBR as defined above.

[0040] A device made according to the first method can be a semiconductor resonant cavity device with two DBR mirrors, while a device made according to the second method can be a semiconductor resonant cavity device with a metal mirror as first mirror, and a DBR mirror as second mirror.

[0041] A novel device and a method for making the device are disclosed. A light emitting or absorbing device now can be fabricated to include a doped contact layer, in which the device structure is not degraded during the fabrication process. The light emitting or absorbing device can generate or absorb light in the visible spectrum. Additionally, since the fabrication of the contact layer is integrated in the process flow of the light emitting device, the light emitting device is more easily manufactured, thus reducing overall costs and allowing significant improvements in reliability and quality.

[0042] Other features and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the invention.

[0043] The reference figures quoted below refer to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0044]
FIG. 1 shows an enlarged detail of a DBR mirror.

[0045]
FIG. 2 is a graph of reflectivity R of a DBR as a function of wavelength λ at normal incidence, for 26 Al0.55Ga0.45As/AlAs mirror pairs.

[0046]
FIG. 3 is a graph of refractive index of AlGaAs as a function of the aluminum content in the AlGaAs material, at a wavelength of 640 nm.

[0047]
FIG. 4 is a graph of reflectivity R of a DBR as a function of the incidence angle of the light; the critical angle θc below which light can be extracted being indicated.

[0048]
FIG. 5 illustrates an RCLED according to an embodiment of the present invention.

[0049]
FIG. 6 illustrates the principle of a critical angle for outcoupling light.

[0050]
FIG. 7 is a graph showing the reflectivity of a DBR mirror as a function of the number of Al0 55Ga0 45As/AlAs DBR mirror pairs at 640 nm.

[0051]
FIG. 8 is a schematic diagram of a 640 nm GaP DBR based RCLED structure in accordance with an embodiment of the present invention.

[0052]
FIG. 9 is a graph of optical spectra as a function of wavelength, of an RCLED as in FIG. 8, that has a GaP layer as top DBR layer and as a transparent contact layer.

[0053]
FIG. 10 is a graph of the optical output power of RCLEDs emitting at 638 nm and using AlAs/GaP as the top DBR, the GaP layer having an optical thickness of 3λ/4 and being used as a DBR mirror layer and a transparent ohmic top contact layer.

[0054]
FIG. 11 is a graph of the of optical output power in function of injection current for 638 nm RCLEDs with a GaP DBR top layer which is also used as contact layer, on which it can be seen that optical power reduces with increasing temperature.

[0055]
FIG. 12 is a graph of the optical output power as a function of temperature at an injection current of 20 mA of an RCLED with a GaP DBR top layer which is also used as a contact layer.

[0056] In the different figures, the same reference figures refer to the same or analogous elements.

DESCRIPTION OF THE ILLUSTRATIVE EMBODIMENTS

[0057] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. In particular the invention is not limited to the materials mentioned in the description; other suitable materials may also be used. The drawings described are only schematic and are non-limiting. In particular supplementary layers, not shown in the drawings nor explicitly mentioned in the description, may be added without departing from the scope of the invention. In particular, although the present invention will mainly be described with reference to RCLED's, it may be applied to other devices e.g. to a laser such as a light emitting vertical cavity surface emitting laser or to a resonant detector in which incoming light is converted into a current the inverse way as for driving e.g. an RCLED.

[0058]
FIG. 1 shows part of a DBR mirror 10. A DBR mirror 10 consists of a periodic stack of alternating high and low refractive index materials layers 11, 12, e.g. gallium arsenide (GaAs) and aluminium arsenide (AlAs). The difference in the refractive indexes n1 and n2 from the layers 11 and 12 respectively, is responsible for reflection of the DBR mirror 10.

[0059] Layers 11 have a physical thickness d1 and a refractive index n1, and layers 12 have a physical thickness d2 and a refractive index n2. The physical thickness d1, d2 of each layer 11, 12 is chosen for quarter-wavelength reflection at a given wavelength λ as follows:

d

1
=λ/4n1*cte

d

2
=λ/4n2*cte

[0060] with cte being an odd integer.

[0061] If the optical thickness, i.e. d1 n1 is optimised, i.e. as close as possible to an odd multiple of λ/4, constructive interference applies. When a DBR mirror 10 is being made, and e.g. a layer 12 is deposited on top of a layer 11, its physical thickness d2 should be accurately controlled.

[0062] A quarter wave thickness of each layer, i.e. an optical thickness equal to an odd multiple of λ/4, ensures that the reflection is constructive. This quarter wave thickness may be any odd multiple (1, 3, 5, etc) of the optical thickness.

[0063] For example, a DBR mirror pair 11, 12 consisting of AlGaAs (with refractive index n1=3.46) and AlAs (with refractive index n2=3.1) is considered at 640 nm. The quarter wave thickness for AlGaAs is 640/(4*3.46)=46.3 nm or any odd multiple thereof. Similarly, for AlAs, the quarter wave thickness will be 640/(4*3.1)=51.6 nm or any odd multiple thereof.

[0064] As shown in FIG. 1, DBR mirror pairs 11, 12 can be stacked together to have increased reflectivity, as shown in FIG. 7.

[0065] Going back to a basic example of one quarter wave thickness, one quarter wave thickness of AlGaAs and one quarter wave thickness of AlAs is needed to make one mirror pair. The total thickness for one mirror pair is then a half wavelength thickness. A half wavelength thickness material has no mirror properties and will only act as a transparent medium for light to pass through.

[0066] The reflectivity of a DBR mirror 10 is a complex function of the incidence angle of the light on the DBR mirror 10 and the wavelength of the light. The DBR mirror 10 can be highly reflective, but only over a limited wavelength and incidence angle range, as shown in FIG. 2 and FIG. 4.

[0067]
FIG. 2 shows the reflectivity R of a DBR mirror 10 composed of 26 pairs of alternating aluminium arsenide (AlAs) and aluminium gallium arsenide (Al0 55Ga0 45As) layers 11, 12, as a function of the wavelength λ. Thicknesses were 51.6 nm and 46.3 nm respectively for AlAs (n=3.1 at 640 nm) and Al0 55Ga0 45As (n=3.46 at 640 nm) for an exact quarter wave thickness DBR mirror. λDBR is the central wavelength for which the DBR mirror 10 is designed to have the highest reflection, in the present case λDBR=640 nm, and at this central wavelength the DBR has a reflectivity of 99.43%. It can be seen from FIG. 2 that the DBR mirror 10 has a high reflection for a limited wavelength range Δλ. Depending on the material composition of the DBR mirror, Δλ typically is between 30 nm and 60 nm, 46 nm for the specific example given in FIG. 2.

[0068] It is to be noted that bandwidth and reflectivity of a DBR mirror change with different DBR mirror materials. The reflectivity R is higher when the difference Δn in refractive indexes of the layers 11, 12 is bigger. FIG. 3 shows the refractive index of AlGaAs as a function of the content of aluminium in it, at a wavelength of 640 nm. The more aluminium it contains, the lower the refractive index for a certain wavelength. For a DBR mirror 10, AlGaAs with aluminium content between 0% and 55% is preferably not used, because then AlGaAs becomes absorbing for wavelengths below 640 nm. If a DBR mirror 10 would be made with Alx1Ga1−x1As/Alx2Ga1−x2As (x1, x2 between 55% and 100%), then the reflectivity R would be maximum for a certain wavelength for an aluminium content of 55% for one type of layers 11 and 100% for the other type of layers 12. If Δn is smaller, then Δλ (FIG. 2) and R also become smaller for the same number of DBR mirror pairs, i.e. the DBR mirror 10 is reflective for a smaller range of wavelengths around the central wavelength λDBR.

[0069]
FIG. 4 is a graph of the reflectivity R of a DBR mirror 10 in function of the incidence angle θ of the light on the DBR mirror 10. FIG. 4 shows reflection of a 26 period (Al0 55Ga0.45As/AlAs) DBR. Taking into account an average refractive index of 3.2 for the semiconductor device, the critical angle into air is (sin−1 1/3.2)=18.2°. FIG. 4 shows the line that corresponds to 18.2° as a reference.

[0070] In principle, for a perfectly tuned DBR mirror 10 (i.e. a DBR mirror of which the alternating layers have an optical thickness of exactly an odd multiple of λ/4—for the example given in FIG. 4: 46.3 nm layers for Al0 55Ga0 45As, which has a refractive index n=3.46 at 640 nm; and 51.6 nm layers for AlAs, which has a refractive index n=3.1 at 640 nm), light rays could be extracted for an incidence angle between 0° and θc, θc being the critical angle. However, for a range AO of incidence angles between θ1 and θc, the reflectivity R of the DBR mirror 10 is not as high, as shown by graph A in FIG. 4, so that not all the light which is extracted is reflected to the same amount.

[0071] The reflectivity of a DBR mirror 10 increases as a function of the number of DBR pairs 11, 12, as can be seen in FIG. 7. One pair of DBR mirrors provides 43% reflection. Initially, reflectivity increases linearly with the number of DBR periods, then the rate of increase reduces for beyond 12 pairs, and afterwards, reflectivity increases very slowly. For 50 mirror pairs, the reflectivity of a DBR mirror is 99.92%.

[0072]
FIG. 5 illustrates an enlarged cross-sectional view of an RCLED device 40 according to the present invention. The RCLED is formed on a supporting substrate 42 having surfaces 41 and 43. Light 49 is emitted by the RCLED in a direction perpendicular to the substrate 42. This light 49 has a wavelength λ.

[0073] Substrate 42 is made of any suitable material, such as a semiconductor material. Typically, substrate 42 is made of gallium arsenide (GaAs) or germanium (Ge). Ge has a slightly higher lattice constant as GaAs, but both lattices are close enough to each other to make Ge a valuable candidate to replace GaAs. Ge is much cheaper and is mechanically stronger than GaAs, and there is currently a shortage of GaAs substrates because of the increased demand, while Ge has a more elastic supply.

[0074] An RCLED device 40 contains a highly reflective (R=90%-99.9%) bottom mirror 44 and an only moderate reflective (R=50%-90%) top mirror 68, in between which mirrors 44, 68 an active region 54 is disposed between spacers 48, 62.

[0075] The bottom mirror 44 may e.g. be a first stack of Distributed Bragg Reflectors (DBR) having a plurality of alternating layers made of two different materials with alternating refractive indexes, illustrated by layers 46 and 47, e.g. 26 pairs of alternating layers (only a few layers are represented in FIG. 5).

[0076] The bottom mirror 44 may e.g. be made of layers of GaAs, AlGaAs, InAlGaP, or combinations of these, the layers being n-doped. In fact, any material that is lattice matched to the substrate material (GaAs or Ge) and which can be sufficiently doped (order of 1018 cm−3) can be used. Any suitable n-type dopants, such as silicon, selenium, sulphur or the like may be used for doping the DBR bottom mirror 44. The doping is necessary in order to obtain good current spreading and conduction in the RCLED device 40.

[0077] Examples of combinations of layers 46 and 47 may be:

[0078] 1. Alx1Ga1−x1As/Alx2Ga1−x2As, with 0<x1, x2<100% and x1≠x2;

[0079] 2. In(Alx1Ga1−x1)P/In(Alx2Ga1−x2)P, with x1, x2 between 100% and 0%, x1≠x2;

[0080] 3. Alx1Ga1−x1As/In(Alx2Ga1−x2)P, with x1>95%, x2 between 100% and 0%; or combinations of 1 to 3.

[0081] It should be understood that in the examples contained within this description where a percent composition of a particular element is given it should be considered only as an example. It should be further understood that variations from these examples can be large and are part of the present invention.

[0082] The layers 46, 47 of the bottom mirror 44 have an optical thickness of substantially an odd multiple of one quarter wavelength. Alternatively, the bottom mirror 44 can be detuned.

[0083] Generally, the plurality of alternating layers 46, 47 of DBR bottom mirror 44 are from one pair to fifty mirror pairs, with a preferred number of mirror pairs ranging from twenty two to thirty three mirror pairs. However, it should be understood that the number of mirror pairs could be adjusted for specific applications.

[0084] The top mirror 68 may e.g. be a second stack of DBR including at least one mirror pair 69, 70, the top layer 70 of which is composed of gallium phosphide (GaP) and has an optical thickness of substantially an odd multiple of one quarter wavelength. In FIG. 5, an embodiment is shown with only one mirror pair in the top mirror 68, comprising a layer 69 of e.g. AlxGa1−xAs, with x>95% (e.g. Al0 97Ga0 3As) and a top layer 70 of GaP. The alternating layers 69 and 70 are formed such that alternating layers 69 and 70 differ in their refractive indexes. The GaP top layer 70 is combined with a conductive AlxGa1−xAs layer 69.

[0085] In one embodiment, if more than one mirror pair is used in the top mirror 68, only the top mirror pair 69, 70 is as described hereinabove; the other mirror pairs (not represented in FIG. 5, but, if present, disposed between the top mirror pair 69, 70 and cladding region 62) have a plurality of alternating layers made of two different materials with alternating refractive indexes, the layers being p-doped. Such alternating layers may e.g. be made of Al0 55Ga0 45As and AlxGa1−xAs, with x>95% (e.g. Al0 97Ga0 03As). Any suitable p-type dopants, such as magnesium, zinc, carbon, beryllium or the like can be used to dope DBR top mirror 68. In another embodiment, each mirror pair of the top mirror 68 comprises a GaP layer and another conductive layer.

[0086] The layers of the top mirror 68 have an optical thickness of substantially an odd multiple of one quarter wavelength. This means that, if RCLED device 40 is designed to emit light with a wavelength of 640 nm (bright red), and a top mirror 68 with a first layer 69 of Al0 97Ga0 3As (optical thickness λ/4) and a top layer of GaP (optical thickness 3λ/4) is used, these layers have a thickness of respectively substantially 51.6 nm and substantially 141 nm .

[0087] It is not possible to have, in the top mirror 68, a plurality of layers being a combination of e.g. Al0.97Ga0 03As and GaP layers, because GaP is not lattice matched to GaAs, and therefore it can only be used as a top layer 70. If it were to be used as an intermediate layer, dislocations would appear in layers subsequently grown on top of the GaP layer. It has been found, however, that a GaP layer can be grown with good quality on top of an (Al)GaAs layer.

[0088] In between the bottom mirror 44 and the top mirror 68, a cavity 45 with an active region 54 is provided. In the active region 54, injected electrons and holes recombine and emit photons. The active region 54 may be a quantum well structure (one or a plurality of quantum wells embedded in barrier layers) or a bulk active layer.

[0089] According to one embodiment of the present invention, active region 54 is a quantum well layer made of e.g. undoped (Al0 1Ga0 9)0.43In0.57P , with barrier layers being made of undoped (Al0 7Ga0 3)0.52In0 48P, thereby causing RCLED device 40 to emit light (arrow 49) in the visible spectrum.

[0090] Some material is needed to fill the cavity 45, and this material is given by a plurality of cladding regions 48, 62. In FIG. 5, cladding region 48 comprises layers 50 and 51, and cladding region 62 comprises layers 64 and 65. Layer 50 of cladding region 48, in close contact with bottom mirror 44, is n-type doped like bottom mirror 44, and layer 65 of cladding region 62, in close contact with top mirror 68, is p-type doped like top mirror 68. Layers 51 and 64 of cladding regions 48 and 62, respectively, and active region 54 is generally undoped.

[0091] Generally, cavity 45, comprising cladding regions 48 and 62 and active region 54, provides a thickness that is a slightly larger thickness than a multiple wavelength of light (arrow 49) emitted from RCLED device 40. However, the thickness of cladding regions 48 and 62 and active region 54 can be any suitable integer multiple of the wavelength of emitted light.

[0092] It should be understood that active region 54 is positioned at an antinode position of the cavity 45, which is a position where maximum resonance of the light is obtained.

[0093] It is stated above that the layers of the first DBR mirror 44 have an optical thickness of substantially an odd multiple of λ/4. An optical thickness of an odd multiple of λ/4 leads to a tuned DBR. “Substantially” is meant that a detuned DBR may be used, which may have deviations from that optical thickness of at most 15%, preferably between 0% and 10% and most preferred between 2% and 3%. This means that the optical thickness of layers of the mirrors 44 are not exactly matched to an odd multiple of λ/4. An advantage thereof is that a higher output angle is covered. This is explained with respect to FIGS. 4 and 6. An active region 54 where spontaneous emission takes place, is placed between a highly reflective bottom mirror 44 and a moderately reflective top mirror 68 (for an RCLED). Light 49 is only extracted from the RCLED device 40 if it falls within a critical angle θc, which is dependent on the relation between the refractive indexes of the top layer of the DBR mirror and air. If a detuned DBR is used, the spontaneous emission is reshaped, so that a higher reflectivity is obtained within the critical angle θc.

[0094] By detuning the first DBR 44, the range of incidence angles for which the DBR is highly reflective is increased. Graph B in FIG. 4 shows a detuned DBR with a detuning of 2%, whereby the thicknesses of the layers are 1.02*46.3=47.2 nm for Al0.55Ga0 45As and 1.02*51.6=52.6 nm for AlAs. It can be seen from FIG. 4 that for the exactly tuned DBR, reflectivity falls to below 60% at an incidence angle of 18.2°. This implies that a substantial amount of light is lost at this critical angle region. When detuning of the DBR is done by adding only 2% extra thickness to each of the DBR mirrors, the reflectivity goes up to more than 97% at the angle of 18.2°, implying that most of the light is now reflected within the acceptance angle.

[0095] It may be noted from FIG. 4 that a detuned DBR mirror (graph B) has a slightly lower reflectivity at 0° angle compared to the exact DBR (graph A). The higher the detuning, the lower the reflectivity at the 0° angle will be. To compensate for this effect, a larger number of DBR mirror pairs might be needed to match exact DBR reflectivity at 0° angle.

[0096] Furthermore, once a DBR is detuned, the resulting RCLED using such a detuned DBR as first mirror is less dependent on temperature. The detuned DBR can compensate for the variation of resonance matching of the microcavity with changing temperature.

[0097] The temperature coefficient of the emission wavelength is about 0.33 nm/K for GaAs and InGaAs based active regions, 0.32 nm/K for InAlGaP based quantum well structures. For an AlGaAs based DBR, the temperature coefficient is about 0.087 nm/K.

[0098] An RCLED device 40 structure may be e.g. epitaxially grown by MOCVD (metal organic vapour deposition), by MBE (molecular beam epitaxy), or in any other way known to a person skilled in the art. These methods allow for the epitaxial deposition of material layers, such as InAlGaP, InGaP, GaP, AlAs, AlGaAs, InAlP and the like. DBR bottom mirror 44 is epitaxially deposited on surface 43 of substrate 42. As shown in FIG. 5, cladding region 48 is typically made of two components (it may be made of one or more components) that are epitaxially disposed or deposited on DBR bottom mirror 44. First, layer 50, made of any suitable material, such as InAlGaP, InAlP, or the like, is epitaxially deposited on bottom mirror 44. Layer 50 is n-type doped with any suitable dopant such as silicon, selenium, sulphur or the like, similar to stack 44. Second, layer 51, made of any suitable material, such as InAlGaP, or the like, having an appropriate thickness and typically being undoped (because an undoped layer 51 protects the active region from unwanted contamination by doping in layer 50), is epitaxially deposited on layer 50. The thickness of cavity 45 is determined by the wavelength of light (arrow 49) that is to be emitted from RCLED device 40. Active region 54, as shown in FIG. 5, is represented by a single layer which is epitaxially deposited or disposed on cladding region 48; however, active region 54 is more clearly defined as including a plurality of layers. More specifically, active region 54 may include a quantum well structure (quantum well layers embedded in barrier layers) or a bulk active layer. The active region 54 is positioned such that it is located at an antinode position of the cavity 45. Cladding region 62 typically includes two layers, such as layers 64 and 65 (but may comprise one or more layers) that are disposed or deposited epitaxially on active region 54. First, layers 64 and 65 are made of any suitable cladding material, with reference to cladding region 62, that is epitaxially deposited to an appropriate thickness. By way of example, layer 64 may be formed of undoped In0 49(AlxGa1−x)0 51P that is epitaxially deposited on active region 54. Subsequently, layer 65 is e.g. formed of doped In0 49(AlxGa1−x)0 51P that is epitaxially deposited on undoped layer 64. Doping for layer 65 is with a p-type dopant. Subsequent depositions define DBR top mirror 68 with a p-doped GaP top layer 70. The GaP top layer 70 serves as part of the DBR top mirror 68, as contact region and as transparent window for the emitted radiation. GaP is a wide band-gap material, that is transparent to the wavelength of this particular embodiment. GaP is easily doped with a p-type dopant, such as magnesium, zinc, beryllium, or a combination of these dopants, to a level of 3e19 cm−3 or higher. The ability to obtain high p doping does away with the need to grow thick current spreading layers and thereby increases efficiency of the RCLEDs. In addition, GaP is not degraded by the high temperatures which doping steps typically require, such as 700° C., and is capable of serving as a good passivation layer. The GaP top layer 70 is preferably deposited initially at a high temperature, for example 740° C. with a low doping level, such as for example 1e18 cm−3. This high growth temperature assures a good quality GaP layer at the interface with another material (hetero-epitaxy). Lower growth temperatures facilitate dopant incorporation in a GaP layer, therefore growth temperature is lowered, for example to 680° C. when at least a part of the substantially λ/4 GaP layer has been deposited, in order to enable the doping level to be increased to for example 3×1019 cm−3. It is generally known that at lower growth temperature, a GaP layer surface is very cloudy and rough, and of low crystal quality and is therefor not suitable for electrical contacts. It has now been surprisingly found that, when starting the growth of a GaP layer at high growth temperature, and then decreasing the growth temperature, still a good quality GaP layer is obtained. Thus, according to the present invention, different doping levels are obtained over the thickness of the GaP top layer 70. The doping level is lower at the side of the GaP layer 70 towards the DBR, and is higher at the side where light is emitted. This change in doping levels may be a continuous change from a lower doping level to a higher doping level, or it may be a step-wise change, e.g. the change of doping level may be step-wise smooth.

[0099] The various steps of the method disclosed have been performed in a specific order for purposes of explanation. However, it should be understood that various steps of the disclosed method may be interchanged and/or combined with other steps in specific applications and it is fully intended that all such changes in the disclosed methods come within the scope of the claims.

[0100] For example, the RCLED structure may be grown on a GaAs substrate, after which the RCLED structure is removed from the GaAs substrate and transferred onto another substrate, such as e.g. glass or a GaP substrate for example.

[0101] As another example, in a first step an etch stop layer may be grown on a substrate. On top of this etch stop layer, an active material is grown, and on top thereof, a top DBR mirror with GaP top layer is grown. Thereafter, an etching solution may be used to remove the etch stop layer, so as to separate the substrate from the active material and top DBR mirror. This active material and top DBR mirror can then be placed on a suitable metal mirror (normally gold), which forms the bottom mirror. Of course this manufacturing process is more complicated and increases the cost of the device.

[0102] Surface 43 of substrate 42 can be used to form a bottom contact (not shown) which is electrically coupled to bottom mirror 44. The contact is typically formed by applying any suitable conductive material, such as a metal or an alloy, e.g. gold, silver, platinum, germanium gold alloy, or the like to surface 43, or in some applications to surface 41, and annealing the conductive material with substrate 42. Also other methods can be used to electrically couple DBR 44, such as directly coupling to DBR 44. The alternative methods can be achieved by combining several processing steps, such as photolithography, etching, and metallisation, or the like. Top layer 70 forms a top contact.

[0103] When a voltage is applied between the bottom contact and the top contact, spontaneous emission takes place in the active region 54. By spontaneous emission, a same amount of light is emitted in all directions. This emitted light bounces between the bottom mirror 44 and the top mirror 68, and if the thickness of the layers in the bottom mirror 44 and the top mirror 68 is an odd multiple of λ/4, and if the thickness of the cavity is slightly larger than a multiple of the wavelength of the emitted light, constructive interference takes place. As the top mirror 68 is less reflective than the bottom mirror 44, light will be emitted through the top mirror 68, out of the RCLED device 40, according to arrow 49 in FIG. 5.

[0104] An RCLED employing GaP as a DBR mirror and as a contact layer in accordance with an embodiment of the present invention has been successfully developed. In this case, the top DBR mirror consisted of 1 period of p type Al0 97Ga0.03As/GaP (FIG. 8). The p type Al0 97Ga0.03As λ/4 thick layer is doped to 1×1018 cm−3 with Zn while GaP is 3λ/4 thick and is doped to 3×1019 cm−3 with Mg.

[0105] Diethyl zinc (DEZ) was used as a source for Zn, while Cp2Mg (bis-cyclopentadienyl magnesium) was used as the source for Mg. For GaP doped with Zn, the hole concentration was 5×1018 cm−3 at 740° C. This was obtained for a DEZ/III ratio of 0.3 which is quite a high value. The same hole concentration of 5×1018 cm−3 at 740° C. was obtained for Mg for a Cp2Mg/III ratio of 1.7×10−3. Doping with Mg is thus more efficient under the present growth conditions. A high hole concentration (or p-dopant concentration) can be achieved only at lower growth temperature, lower PH3 (phosphine) flow along with a low Mg flow. However, a lower growth temperature and PH3 flow also produce bad surface morphology and is therefore not suitable for electrical contacts. An optimised GaP layer has to address both these aspects of epilayer characteristics. For an optimum crystalline quality of GaP and high doping, layers were grown starting from 425 cc PH3, 40 cc Cp2Mg and 51.5 cc TMG (Trimethylgallium) at 740° C., after which the growing conditions has been changed into 30 cc PH3, 10 cc Mg and 180 cc TMG at 680° C. PH3 to the reactor was stopped while cooling down at 550° C. This ensured a good surface morphology along with a hole concentration>3×1019 cm−3. During annealing of p-GaP, the Mg concentration profile inside the GaP layer changed. Due to out-diffusion, the Mg-concentration slightly reduces inside the GaP layer, but goes up at the surface compared to the as grown sample.

[0106] Metal ohmic contacts to p-GaP have been made. Au—Zn and Ti—Au were initially attempted for p-GaP corresponding to a hole concentration of 5×1018 cm−3. Both types of metal contacts were annealed for 5 minutes at 440° C. under nitrogen environment. The specific contact resistance was on the order of 10−1 Ωcm2. The specific contact resistance reduced with increasing measuring current. Ti—Au shows better characteristics than Zn—Au. Ni or Pt acts as adhesives for refractory metal systems. For GaP doped to 5×1018 cm−3, Pt—Ti—Au showed a lower contact resistance (of the order of 10−2) compared to Zn—Au contact metal system. Ni—Ti—Au showed still lower and more stable specific resistance compared to the other metal systems. It is preferred to have a still higher hole concentration for a low specific resistance contact on p-GaP. As shown in the table hereunder, for hole concentrations of 4×1019 cm−3 for p-GaP, Ni—Ti—Au provided the lowest specific contact resistance (4×10−4 Ωcm2) for all measuring currents from 0.1 mA to 10 mA.

1HoleSpecific contact resistance (ohm-cm2)concen-Metalfor different measuring currentstrationsystemImeas = 0.1 mAImeas = 1.0 mAImeas = 10 mA5 × 1018Ti-Au4.12 × 10−23.11 × 10−21.43 × 10−2cm−3Ni-Pt-Au3.37 × 10−1 8.5 × 10−11.19 × 10−2Ti-Pt-Au7.56 × 10−25.81 × 10−23.09 × 10−2Zn-Au1.60 × 10−16.88 × 10−23.81 × 10−2Ni-Ti-Au5.21 × 10−23.84 × 10−21.72 × 10−26 × 1018Zn-Au2.15 × 10−19.13 × 10−24.17 × 10−2cm−3Ni-Ti-Au3.73 × 10−23.37 × 10−22.01 × 10−2Ni-Pt-Au8.31 × 10−26.84 × 10−24.30 × 10−24 × 1019Ni-Ti-Au4.15 × 10−44.28 × 10−43.96 × 10−4cm−3

[0107]
FIG. 9 shows optical spectra from the above RCLED with GaP as both DBR and transparent ohmic contact layer. The peak position is 641 nm at 20 mA and shifts to 642 nm at 100 mA injection current. This implies a peak shift of only 0.0125 nm/mA for the RCLED. The Full Width at Half Maximum (FWHM) value is 9.9 nm at 20 mA and shifts to 10.9 nm at 100 mA injection current. The FWHM value changes very slightly with current and the spectrum shape remains essentially unaltered. This indicates that the devices have a very high quality.

[0108]
FIG. 10 shows the optical output power and the external quantum efficiency for the RCLEDs with deep etch and shallow etch. For the ‘deep etch’ device, both the top DBR and the InAlGaP active layer are etched through while for the ‘shallow etch’ device, only the top two layers forming the top DBR layers are etched and the etching is stopped at the InAlGaP interface. The RCLED with deep etch has a maximum external quantum efficiency of 4% at 24 mA injection current. The optical output power saturates at about 5.4 mW corresponding to 100 mA injection current. The device with shallow etch shows a maximum external quantum efficiency of 6.1% at 8 mA of injection current. The output power goes up to 6.5 mW at 100 mA injection current. It is clear that the shallow etching provides a better device compared to the deep etching possibly due to less leakage and surface recombination.

[0109] The optical output power saturates at a lower value for a GaP DBR layer with an optical thickness of 3λ/4, compared to that for using 3.0 μm thick p type Al0 55Ga0 45As current spreading layer. However, the maximum external quantum efficiency is higher with GaP DBR layer. The voltage drop is however slightly higher with GaP DBR layer at 2.3 V at 20 mA compared to that of 2.0 V at 20 mA for the Al0 55Ga0 45As current spreading layer. It may be noted that the hole concentration for Mg doped GaP layer is only 5×1018 cm−3 and Ni—Ti—Au metal contact is used for ohmic contact formation. The GaP doping as well as ohmic contact is non-optimised. This leads to a higher specific contact resistance of ˜10−2 Ω-cm2 and consequently to a lower optical power saturation (7.7 mW at 100 mA using 3.0 μm Al0 55Ga0 45As current spreading layer and 6.5 mW at 100 mA using 141 nm GaP DBR layer). Also, it may be noted that for the RCLED with AlGaAs current spreading layer, there is a 5 period p doped top DBR that facilitates optical output extraction. For the RCLED with GaP DBR, the top DBR is in the experiment only one period consisting of only 1 layer of p-Al0 97Ga0 03As and 1 layer of p-GaP. These results are in conformance with the design considerations that when there is no current spreading layer, the radiation power is higher with fewer DBR periods.

[0110]
FIG. 11 shows variation of optical output power with temperature for 638 nm RCLEDs with a GaP DBR top layer which is also used as contact layer. As the temperature increases, the optical output power reduces. The reduction in optical output power is due to the change in refractive index and thermal expansion of the DBR and cavity material as a function of temperature. The change is different for InAlGaP quantum wells and AlGaAs DBR layers. For AlGaAs DBR layers, the thermal expansion is about 0.087 nm/K, the InAlGaP spacer material has a slightly lower thermal expansion. The InAlGaP QWs change at a rate of 0.32 nm/K. This implies that the change in DBR central wavelength is much slower than the shift in the quantum well emission wavelength. With changing temperature, the DBR and the quantum well emission go out of tune and resonance matching conditions are less and less satisfied. This reduces the optical output power that could be extracted out of the device. FIG. 12 shows optical output power at 20 mA injection current at different temperatures. The optical output power from the device at 9° C. reduces to about 60% of its value at 40° C. The temperature coefficient for the optical power is −1.23%/K for the present RCLEDs. While the invention has been shown and described with reference to preferred embodiments, it will be understood by those skilled in the art that various changes or modifications in form and detail may be made without departing from the scope and spirit of this invention.

[0111] For example, while FIG. 5 only illustrates a portion of a single RCLED device 40, a plurality of RCLEDs may be located on a same substrate 42 to form an array of RCLEDs.

[0112] Furthermore, it should be understood that FIG. 5 is a simplified illustration and that many elements have been purposely omitted to illustrate more clearly the present invention.

[0113] Additionally, it should be understood that RCLED device 40 can be formed by any suitable method to shape emitted light (arrow 49) into a variety of geometric patterns, such as a square, a circle, a triangle, or the like.

[0114] In view of the wide variety of embodiments to which the principles of the invention can be applied, it should be understood that the illustrated embodiment is an exemplary embodiment, and should not be taken as limiting the scope of the invention. The claims should thus not be read as limited to the described order or elements unless stated to that effect. Therefore, all embodiments that come within the scope and spirit of the following claims and equivalent thereto are claimed as the invention.

Claims

1. A conductive or semiconductive Distributed Bragg Reflector for reflecting radiation with a wavelength λ comprising: at least one mirror pair, each mirror pair comprising a bottom layer and a top layer, the top layer of one mirror pair consisting essentially of GaP and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4.
2. A resonant cavity device for emitting or absorbing light with a wavelength λ, comprising: a first mirror, a second mirror, and an active region, the active region located between the first and second mirror, wherein the second mirror comprises a stack of Distributed Bragg Reflectors including at least one mirror pair, the mirror pair comprising at least a top and a bottom layer, the top layer, being most remote from the first mirror, being composed of GaP and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4 and being intended to be used as a contact layer.
3. A resonant cavity device according to claim 2, wherein the optical thickness of the GaP layer of substantially λ/4 or substantially an odd multiple of λ/4 includes a deviation of at most 15% from that thickness of λ/4.
4. A resonant cavity device according to claim 3, wherein the deviation is between 0% and 10%.
5. A resonant cavity device according to claim 3, wherein the deviation is between 0% and 5%.
6. A resonant cavity device according to claim 3, wherein the deviation is 0%
7. A resonant cavity device according to claim 2, wherein the first mirror comprises a stack of Distributed Bragg Reflectors including pairs of alternating layers.
8. A resonant cavity device according to claim 7, wherein the optical thickness of the layers of the first mirror comprising the stack of Distributed Bragg Reflectors includes a deviation from substantially λ/4 or substantially an odd multiple of λ/4 by at most 15%
9. A resonant cavity device according to claim 8, wherein the deviation is between 0% and 10%.
10. A resonant cavity device according to claim 8, wherein the deviation is between 2% and 3%.
11. A resonant cavity device according to claim 7, wherein the alternating layers in the first mirror are based on n-type doped AlGaAs and/or InAlGaP.
12. A resonant cavity device according to claim 3, wherein the pairs of alternating layers in the first mirror comprises one to fifty pairs of layers.
13. A resonant cavity device according to claim 2, wherein the first mirror comprises a metal film.
14. A resonant cavity device according to claim 2, wherein the cavity comprises InAlGaP of AlGaAs material.
15. A resonant cavity device according to claim 2, wherein the active region comprises a quantum well structure or a bulk active layer.
16. A resonant cavity device according to claim 2, further comprising a supporting substrate on which the first mirror is disposed.
17. A resonant cavity device according to claim 16, wherein the supporting substrate (42) comprises semiconductor material.
18. A resonant cavity device according to claim 17, wherein the semiconductor material includes GaAs or Ge or GaP.
19. A resonant cavity device according to claim 2, wherein the second mirror includes more than one mirror pair, whereby all layers except the top layer comprise AlGaAs.
20. A resonant cavity device according to claim 2, wherein the GaP top layer is doped with Magnesium and/or Zinc and/or Beryllium.
21. A method of manufacturing a resonant cavity device for emitting or absorbing light with a wavelength λ, comprising the steps of: providing a supporting substrate having a surface; forming a first mirror on the surface of the supporting substrate; and forming a second mirror with an active region between the first and second mirrors, the second mirror comprising a stack of Distributed Bragg Reflectors including at least one mirror pair, the mirror pair comprising a top and a bottom layer, the top layer being most remote from the first mirror, being essentially composed of GaP and having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4, and being intended to be used as a contact layer.
22. A method according to claim 21, wherein providing a supporting substrate includes providing a semiconductor substrate.
23. A method according to claim 22, wherein providing a semiconductor substrate includes providing a GaAs, Ge or GaP substrate.
24. A method according to claim 21, wherein forming a first mirror includes growing a stack of Distributed Bragg Reflectors including pairs of alternating layers on the substrate.
25. A method according to claim 21, wherein growing the first mirror including a stack of Distributed Bragg Reflectors includes growing layers with an optical thickness which includes a deviation from substantially λ/4 or substantially an odd multiple of λ/4 by at most 15%
26. A method according to claim 25, wherein the deviation is between 0% and 10%.
27. A method according to claim 25, wherein the deviation is between 2% and 3%.
28. A method according to claim 21, wherein forming a second mirror comprising a stack of Distributed Bragg Reflectors with a top layer essentially composed of GaP having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4 includes providing a top layer with a deviation of at most 15% from that optical thickness of λ/4.
29. A method according to claim 28, wherein the deviation is between 0% and 10%.
30. A method according to claim 28, wherein the deviation is 0%
31. A method of manufacturing a resonant cavity device for emitting or absorbing light with a wavelength λ, comprising the steps of: providing a supporting substrate; forming a second mirror with an active region between the second mirror and the substrate, the second mirror comprising a stack of Distributed Bragg Reflectors including at least one mirror pair, the mirror pair comprising a top and a bottom layer, the top layer, being most remote from the supporting substrate, being essentially composed of GaP and having an optical thickness of substantially λ/4 or substantially λ/4 or substantially λ/4 or substantially an odd multiple of λ/4, and being intended to be used as a contact layer; separating the active region and the second mirror from the substrate; and transferring the active region and the second mirror onto a device having a first mirror.
32. A method according to claim 31, wherein providing a supporting substrate includes providing a semiconductor substrate.
33. A method according to claim 32, wherein providing a semiconductor substrate includes providing a GaAs, Ge or GaP substrate.
34. A method according to claim 31, wherein forming a first mirror includes growing a stack of Distributed Bragg Reflectors including pairs of alternating layers on the substrate.
35. A method according to claim 31, wherein forming a second mirror comprising a stack of Distributed Bragg Reflectors with a top layer essentially composed of GaP having an optical thickness of substantially λ/4 or substantially an odd multiple of λ/4 includes providing a top layer with a deviation of at most 15% from that optical thickness of λ/4.
36. A method according to claim 35, wherein the deviation is between 0% and 10%.
37. A method according to claim 35, wherein the deviation is 0%

Priority Claims (1)

Number	Date	Country	Kind
01203678.6	Sep 2001	EP

DBR comprising GaP, and use thereof in a semiconductor resonant cavity device

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Priority Claims (1)