CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application serial no. 99127786, filed on Aug. 19, 2010. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
TECHNICAL FIELD
The disclosure relates to a DC offset calibration technique, and more particularly, to a calibration technique that compensates for a DC offset voltage by adjusting the resistances of resistor arrays.
BACKGROUND
Operational amplifier is a major element in wireless communication circuits. An operational amplifier usually receives an input differential signal through the input terminal thereof and generates an output differential signal according to the gain of the operational amplifier. If the input differential signal has an unpredicted DC offset voltage, the quality of the output signal is greatly reduced, or an incorrect output signal may even be generated. Herein the DC offset voltage may be produced by a signal generator at the upper level or caused by device mismatch in the operational amplifier. Thereby, how to eliminate the DC offset has been a major subject in the design of many signal processing systems.
There are two types of DC offset calibration circuits. One type of DC offset calibration circuits generate a voltage inverse to the DC offset voltage by using a negative feedback integrator, so as to eliminate the DC offset caused by device mismatch. Because the negative feedback integrator includes some large elements (for example, capacitors), the negative feedback integrator has to be carefully disposed when it is integrated into a chip, and meanwhile, whether the time spent on eliminating the DC offset is prolonged by the negative feedback effect has to be taken into consideration. The other type of DC offset calibration circuits generate a compensation voltage by using a digital-to-analog converter (DAC), so as to eliminate the DC offset. However, such a DC offset calibration circuit usually adopts a current DAC such that the surface area of the circuit is large and the power consumption thereof is high.
SUMMARY
A DC offset calibration apparatus, a DC offset calibration system, and a method thereof are introduced herein.
The present disclosure is directed to a DC offset calibration apparatus, wherein the resistances of resistor arrays at the input terminal is adjusted to compensate for a DC offset voltage, so that the surface area and the power consumption of the circuit can be both reduced. In addition, the DC offset calibration apparatus adopts an open-circuit design such that the response of the circuit is made rapid and stable.
The present disclosure provides a DC offset calibration apparatus. The DC offset calibration apparatus includes a signal processing unit, a comparison unit, a first resistor array, a second resistor array, and a resistor array control unit. The signal processing unit has a first input terminal and a second input terminal. The signal processing unit receives an input differential signal and generates an output differential signal. The comparison unit is coupled to the signal processing unit. The comparison unit detects and determines the levels of a first DC output voltage and a second DC output voltage of the output differential signal to generate a DC offset signal, wherein the DC offset signal contains the polarity sign of a DC offset voltage. A first end of the first resistor array is coupled to the first input terminal of the signal processing unit, a first end of the second resistor array is coupled to the second input terminal of the signal processing unit, and second ends of the first resistor array and the second resistor array both receive a compensation voltage. The resistor array control unit adjusts the resistances of the first resistor array and the second resistor array according to the DC offset signal, so as to calibrate a DC offset voltage in the output differential signal.
The present disclosure also provides a DC offset calibration method. This method is suitable for being applied between a signal processing unit, a first resistor array, and a second resistor array. The signal processing unit has a first input terminal and a second input terminal, and the signal processing unit generates an output differential signal. A first end of the first resistor array is coupled to the first input terminal of the signal processing unit, a first end of the second resistor array is coupled to the second input terminal of the signal processing unit, and second ends of the first resistor array and the second resistor array both receive a compensation voltage. The DC offset calibration method includes following steps. The levels of a first DC output voltage and a second DC output voltage of the output differential signal are detected and determined to generate a DC offset signal. The first resistor array is adjusted to have a first predetermined resistance according to the DC offset signal. The resistance of the second resistor array is adjusted according to the sequence of the bit codes until the DC offset signal enters a transient state, so as to calibrate the DC offset voltage in the output differential signal.
The present disclosure further provides a DC offset calibration system including N signal processing units, N first resistor arrays, N second resistor arrays, a comparison unit, and a resistor array control unit, wherein N is a positive integer. Each of the signal processing units includes a first input terminal and a second input terminal. Each of the signal processing units receives an input differential signal and generates an output differential signal. A first end of the ith first resistor array is coupled to the first input terminal of the ith signal processing unit, a first end of the ith second resistor array is coupled to the second input terminal of the ith signal processing unit, and second ends of the ith first resistor array and the ith second resistor array receive a compensation voltage, wherein i is a positive integer and 1≦i≦N. The comparison unit detects and determines the levels of a first DC output voltage and a second DC output voltage of the output differential signal of the ith signal processing unit to generate a DC offset signal. The resistor array control unit adjusts the resistances of the ith first resistor array and the ith second resistor array according to the DC offset signal, so as to calibrate a DC offset voltage in the output differential signal of the ith signal processing unit.
Several exemplary embodiments accompanied with figures are described in detail below to further describe the disclosure in details.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings are included to provide further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments and, together with the description, serve to explain the principles of the disclosure.
FIG. 1 is a block diagram of a DC offset calibration apparatus according to a first embodiment of the present disclosure.
FIG. 2 illustrates the circuit structure of a resistor array RA1 according to the first embodiment of the present disclosure.
FIG. 3 illustrates the circuit structure of a resistor array RB1 according to the first embodiment of the present disclosure.
FIG. 4 is a flowchart of a DC offset calibration method according to the first embodiment of the present disclosure.
FIG. 5 is a diagram illustrating a DC offset calibration method according to the first embodiment of the present disclosure.
FIG. 6 is a diagram of the resistor array RB1 in FIG. 3.
FIG. 7 is a block diagram of a DC offset calibration apparatus according to a second embodiment of the present disclosure.
FIG. 8 is a block diagram of a DC offset calibration system according to a third embodiment of the present disclosure.
DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS
Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.
FIG. 1 is a block diagram of a DC offset calibration apparatus 10 according to a first embodiment of the present disclosure. Referring to FIG. 1, the DC offset calibration apparatus 10 includes a signal processing unit 110, a comparison unit 120, a resistor array RA1, a resistor array RB1, and a resistor array control unit 130. The signal processing unit 110 may be a signal processing circuit composed of an operational amplifier 150, a impedor Z1, and a impedor Z2, and the signal processing unit 110 has an input terminal NVIN+, an input terminal NVIN−, an output terminal NVOUT+, and an output terminal NVOUT−. For the convenience of description, in the present embodiment, the impedances of the impedor Z1 and the impedor Z2 are both Z.
Referring to FIG. 1, the comparison unit 120 is coupled to the signal processing unit 110. The comparison unit 120 detects and determines the voltage levels of a DC output voltage VOUT+ and a DC output voltage VOUT− of an output differential signal, so as to generate a DC offset signal SDIF. In the present embodiment, the comparison unit 120 is described as a hysteresis comparator 140. Besides, a first end of the resistor array RA1 in FIG. 1 is coupled to the input terminal NVIN− of the signal processing unit 110 through a switch 160, a first end of the resistor array RB1 is coupled to the input terminal NVIN+ of the signal processing unit 110 through a switch 170, and second ends of the resistor array RA1 and the resistor array RB1 both receive a compensation voltage VCST. The switch 160 and the switch 170 receive a break-off signal SRR from the resistor array control unit 130 through the control terminals thereof and control the coupling between the resistor array RA1 and the resistor array RB1 and the input terminal NVIN− and the input terminal NVIN+ according to the break-off signal SRR. The resistor array control unit 130 generates a resistor array control signal SRA1 and a resistor array control signal SRB1 according to the DC offset signal SDIF, so as to respectively adjust the resistances of the resistor array RA1 and the resistor array RB1 and calibrate a DC offset voltage in the output differential signal.
How to adjust resistances of the resistor array RA1 and the resistor array RB1 and accordingly calibrate the DC offset voltage in the output differential signal will be explained herein formula deduction. Referring to FIG. 1, ideally, the signal processing unit 110 receives an input differential signal through the input terminal NVIN+ and the input terminal NVIN− and generates the output differential signal through the output terminal NVOUT+ and the output terminal NVOUT−. However, in an actual situation, a signal processing unit at the upper level may produce a DC offset voltage VIP1 while transmitting the input differential signal or other factors, and the operational amplifier 150 of the signal processing unit 110 may produce a DC offset voltage VOP1 due to device mismatch therein. The resistance R in the present embodiment is the circuit impedance (for example, circuit resistance) before the input terminal NVIN+ and the input terminal NVIN− of the signal processing unit 110. Aforementioned DC offset voltage VIP1, the DC offset voltage VOP1, and the resistance R are all assumptions in the present embodiment, and the values thereof can be changed according to the actual requirement by those skilled in the art.
The DC output voltage VOUT+ and the DC output voltage VOUT− can be calculated through following formulas (1) and (2), wherein the common mode voltage VCMIN is a DC voltage on the input terminal NVIN+ and the input terminal NVIN−:
Because the signal processing unit 110 works in a differential mode, the DC input voltages VIN+ and VIN− of the input differential signal should have the same voltage level, and the DC output voltages VOUT+ and VOUT− of the output differential signal should also have the same voltage level. Namely, VIN+=VIN− and VOUT+=VOUT−. Thus, the following formula (3) is obtained by subtracting the formula (2) from the formula (1):
Based on foregoing description and formula deduction, if a constant value is obtained by subtracting the common mode voltage VCMIN from the compensation voltage VCST, in the present embodiment, the resistances of the resistor arrays BA1 and RB1 are adjusted to calibrate the DC offset voltages VIP1 and VOP1, so as to reduce the affection of the DC offset voltages VIP1 and VOP1 on the output differential signals VOUT+ and VOUT−.
The present embodiment provides the circuit structures of the resistor arrays RA1 and RB1 and a DC offset calibration method according to the spirit of the present disclosure. The DC offset calibration apparatus 10 sequentially and precisely adjusts the resistances of the resistor arrays RA1 and RB1 by using different bit codes, so as to calibrate the DC offset voltage. In the present embodiment, two kinds of bit codes (M most significant bits (MSB) and N least significant bits (LSB), wherein M and N are both positive integers) are taken as examples of aforementioned different bit codes. Thus, the resistor array control signal SRA1 generated by the resistor array control unit 130 is composed of LSB switch control signals LS1-LSN and MSB switch control signals MS1-MSM, and the resistor array control signal SRBI is composed of LSB switch control signals LD1-LDN and MSB switch control signals MD1-MDM.
FIG. 2 illustrates the circuit structure of the resistor array RA1 according to the first embodiment of the present disclosure. Referring to FIG. 2, the resistor array RA1 includes a resistor 210, a LSB resistor string 220, and a MSB resistor string 230. The first end of the resistor 210 is the first end of the resistor array RA1. The LSB resistor string 220 is connected with the resistor 210 in parallel. The first terminal of the MSB resistor string 230 is coupled to the second terminal of the LSB resistor string 220. In the present embodiment, the LSB resistor string 220 has N LSB switches 240_1-240_N and N LSB resistors 250_1-250_N. The first terminal of the ith LSB switch 240—i is coupled to the first terminal of the LSB resistor string 220, the ith LSB resistor 250—i is connected with the ith LSB switch 240—i in series, and the second end of the ith LSB resistor 250—i is coupled to the second terminal of the LSB resistor string 220, wherein i is a positive integer and 1≦i≦N. Thus, the ith LSB switch 240—i can turn on the first end of the ith LSB resistor 250—i and the first terminal of the LSB resistor string 220 according to the ith LSB switch control signal LSi.
The MSB resistor string 230 in FIG. 2 includes M MSB resistors 260_1-260_M and M MSB switches 270_1-270_M. The first end of the 1st MSB resistor 260_1 is the first terminal of the MSB resistor string 230, and the M MSB resistors 260_1-260_M are connected with each other in series. The jth MSB resistor 260—j is connected with the jth MSB switch 260—j in parallel, and the second end of the Mth MSB resistor 260_M is coupled to the second terminal of the MSB resistor string 230, wherein j is a positive integer and 1≦j≦M. Thus, the jth MSB switch 270—j can turn on the first end and the second end of the jth MSB resistor 260—j according to a jth MSB switch control signal MSj. Assuming that the resistances of the resistor 210 and the LSB resistors 250_1-250_N are all RP and the resistances of the MSB resistors 260_1-260_M are all RS, then the resistor array control unit 130 in FIG. 1 can adjust the maximum resistance of the resistor array RA1 to be (RS×M+RP) and the minimum resistance of the resistor array RA1 to be RP/(N+1) according to the resistor array control signal SRA1.
FIG. 3 illustrates the circuit structure of the resistor array RB1 according to the first embodiment of the present disclosure. Referring to FIG. 3, the resistor array RB1 includes a resistor 310, a LSB resistor string 320, and a MSB resistor string 330. Every two of the resistor 310, the LSB resistor string 320, and the MSB resistor string 330 are connected with each other in series. The first end of the resistor 310 is the first end of the resistor array RB1, and the second terminal of the MSB resistor string 330 is the second end of the resistor array RB1. The LSB resistor string 320 has N LSB switches 340_1-340_N and N LSB resistors 350_1-350_N, wherein every two of the N LSB resistors 350_1-350_N are connected with each other in series. The first end of the 1st LSB resistor 350_1 is the first terminal of the LSB resistor string 320, and the second end of the Nth LSB resistor 350_N is the second terminal of the LSB resistor string 320. The ith LSB resistor 350—i is connected with the ith LSB switch 340_1 in parallel. Thus, the ith LSB switch 340—i can turn on the first end and the second end of the ith LSB resistor 350—i according to the ith LSB switch control signal LDi. The circuit structure of the MSB resistor string 330 is, as that of the LSB resistor string 320, a serial variable resistor structure, wherein the N LSB resistors 350_1-350_N of the LSB resistor string 320 are replaced by M MSB resistors 360_1-360_M, and the N LSB switches 340_1-340_N of the LSB resistor string 320 are replaced by M MSB switches 370_1-370_M. The couplings between the MSB resistors 360_1-360_M and the MSB switches 370_1-370_M will not be described herein. Assuming that the resistance of the resistor 310 is RC, the resistances of the LSB resistors 350_1-350_N are RN, and the resistances of the MSB resistors 360_1-360_M are RM, then the resistor array control unit 130 in FIG. 1 can adjust the maximum resistance of the resistor array RB1 to be (RC+RM×M+RN×N) and the minimum resistance of the resistor array RB1 to be RC according to the resistor array control signal SRB1.
The DC offset calibration method provided in the present embodiment will be described herein. FIG. 4 is a flowchart of a DC offset calibration method according to the first embodiment of the present disclosure, and FIG. 5 is a diagram illustrating the DC offset calibration method according to the first embodiment of the present disclosure. Referring to FIG. 1, FIG. 4, and FIG. 5, in step S410, the resistor array control unit 130 breaks the resistor arrays RA1 and RB1 off the input terminals NVIN+ and NVIN− by using the break-off signal SRR and the switches 160 and 170. Then, in step S420, the resistor array control unit 130 adjusts the predetermined resistance of the resistor array RA1 according to the DC offset signal SDIF, wherein the DC offset signal SDIF is generated by the comparison unit 120 by detecting and determining the levels of the DC output voltage VOUT+ and DC output voltage VOUT− of the output differential signal.
To be specific, the comparison unit 120 enables the DC offset signal SDIF when the DC output voltage VOUT+ is higher than the DC output voltage VOUT− (as shown in FIG. 5). Accordingly, the resistor array control unit 130 adjusts the resistor array RA1 to have the maximum resistance (RS×M+RP) and controls the resistance of the resistor array RB1 to be smaller than that of the resistor array RA1 in subsequent adjustment process so as to calibrate, or even eliminate, the DC offset voltage VDC—OFF in the output differential signal (the DC offset voltage VDC—OFF in FIG. 5 is the level difference between the DC output voltage VOUT+ and the DC output voltage VOUT−). On the other hand, the comparison unit 120 disables the DC offset signal SDIF when the DC output voltage VOUT+ is lower than the DC output voltage VOUT−. Accordingly, the resistor array control unit 130 adjusts the resistor array RA1 to have the minimum resistance RP/(N+1) and controls the resistance of the resistor array RB1 to be greater than that of the resistor array RA1 in subsequent adjustment process.
In other words, the DC offset signal SDIF may also be considered as the polarity sign of the DC offset voltage VDC—OFF. When the DC output voltage VOUT+ is higher than the DC output voltage VOUT−, the DC offset voltage VDC—OFF is greater than 0, the polarity sign thereof is positive, and the DC offset signal SDIF is enabled. When the DC output voltage VOUT+ is lower than the DC output voltage VOUT−, the DC offset voltage VDC—OFF is smaller than 0, the polarity sign thereof is negative, and the DC offset signal SDIF is disabled. It should be noted that when the DC offset signal SDIF enters a transient state, the DC output voltage VOUT+ that is originally lower than the DC output voltage VOUT− becomes higher than the DC output voltage VOUT−, or the DC output voltage VOUT+ that is originally higher than the DC output voltage VOUT− becomes lower than the DC output voltage VOUT−).
After the resistor array RA1 is adjusted to have the predetermined resistance, in step S430, the resistor array control unit 130 starts to count M MSB and changes the MSB switch control signals MD1-MDM according to the MSB, so as to adjust the resistance of the resistor array RB1 until the DC offset signal SDIF enters a transient state. For example, as shown in FIG. 5, the DC output voltage VOUT+ is higher than the DC output voltage VOUT− at the time T1. During the period D1 (i.e., the time T1-T2) in FIG. 5, the voltage levels of the DC output voltage VOUT+ and the DC output voltage VOUT− get closer to each other every time when the resistor array control unit 130 counts one MSB, so that the affection of the DC offset voltage VDC—OFF over the output differential signal is reduced. In step S430, if the MSB has been counted from 1 to the Mth power of 2 (i.e., the counting operation is completed) but the DC offset signal SDIF does not enter the transient state (i.e., the DC output voltage VOUT+ is always higher than the DC output voltage VOUT−), the procedure proceeds from step S440 to step S450 so as to adjust the predetermined resistance of the resistor array RA1 again.
Contrarily, at the time T2 in FIG. 5, when the DC output voltage VOUT+ is lower than the DC output voltage VOUT− (i.e., the DC offset signal SDIF enters the transient state), the procedure proceeds from step S440 to step S460, and the resistor array control unit 130 resumes to the previous MSB value and stops counting the MSB. Next, the resistor array control unit 130 starts to count N LSB to change the LSB switch control signals LD1-LDN, and during the period D2 (i.e., the time T2-T3), the resistor array control unit 130 continuously controls the voltage levels of the DC output voltage VOUT+ and the DC output voltage VOUT− to get closer to each other until the DC output voltage VOUT+ is lower than the DC output voltage VOUT− again (i.e., at the time T3 when the DC offset signal SDIF enters the transient state). In step 470, the resistor array control unit 130 stops counting the LSB. The resistor array control unit 130 adjusts the resistor array RB1 according to the calibrated MSB and LSB so as to eliminate the DC offset voltage VDC—OFF. Additionally, as shown in FIG. 5, the resistance variation of each MSB during the period D1 is greater than that of each LSB during the period D2 so that resistance of the resistor array RB1 can be quickly adjusted to an approximate value. Besides, the resistance variation of all counted LSB is greater than that of one MSB, so that the resistance of the resistor array RB1 can be precisely adjusted to a constant value to eliminate the DC offset voltage VDC—OFF.
In the present embodiment, the resistances of the resistor arrays are gradually adjusted by counting the MSB and the LSB, so that the DC output voltage VOUT+ and the DC output voltage VOUT− are slowly equalized and the DC offset voltage VDC—OFF is gradually eliminated. In other embodiments of the present disclosure, there may be more different types of bit codes, and these bit codes may be gradually and sequentially adjusted to eliminate the DC offset voltage VDC—OFF more precisely. However, these embodiments will not be described herein.
The relationship between the resistances of the resistor RC, the MSB resistors 360_1-360_M, and the LSB resistors 350_1-350_N of the resistor array RB1 in FIG. 3 will be described herein in order to allow those skilled in the art to better understand the present embodiment. FIG. 6 is a diagram of the resistor array RB1 in FIG. 3. As shown in FIG. 6, the arrow 610 indicates the resistance of the resistor array RB1 when the DC offset signal SDIF enters a transient state (i.e., the resistance of the resistor array RB1 after the DC offset voltage is calibrated). First, the resistor array control unit 130 adjusts the resistance of the resistor array RB1 from RC to (RC+RM×j) during the period D1 (i.e., when the MSB is counted from 1 to j). Since the resistance of the resistor array RB1 has been adjusted to the value indicated by the arrow 610, the DC offset signal SDIF enters the transient state. The resistor array control unit 130 adjusts the resistance of the resistor array RB1 back to [RC+RM×(j+1)] at time T2 and continues to count the LSB during the period D2. When the resistor array control unit 130 counts the LSB from 1 to i, the resistance of the resistor array RB1 has been adjusted to the value indicated by the arrow 610. Thus, the DC offset signal SDIF enters the transient state, and the resistor array control unit 130 stops counting the LSB. Thereby, the DC offset voltage can be calibrated the most precisely.
FIG. 7 is a block diagram of a DC offset calibration apparatus 70 according to a second embodiment of the present disclosure. Referring to FIG. 7, the difference between the present embodiment and the first embodiment is that the DC offset calibration apparatus 70 further includes a register unit 710. The register unit 710 stores the resistor array control signal SRA1 and the resistor array control signal SRB1 that have been calibrated by the resistor array control unit 130, so that the DC offset calibration apparatus 70 can directly use the previously calibrated signals for adjusting the resistances of the resistor array RA1 and the resistor array RB1 when next time the DC offset calibration apparatus 70 is powered on. Thus, the DC offset calibration apparatus 70 needs not to carry out the calibration every time when it is powered on and the time it spends on stabilizing signals is shortened.
In a DC offset calibration system 80 provided by a third embodiment of the present disclosure, the comparison unit 120 and the resistor array control unit 130 are shared by a plurality of signal processing units 110_1-110—r so that the circuit area of the DC offset calibration system 80 can be reduced, wherein r is a positive integer. FIG. 8 is a block diagram of the DC offset calibration system 80 according to the third embodiment of the present disclosure. As shown in FIG. 8, in the present embodiment, each of the signal processing units 110_1-110—r, the resistor arrays RA1-RAr, the resistor arrays RB1-RBr, and the register units 710_1-710—r is the same as the corresponding one of the signal processing unit 110, the resistor arrays RA1 and RB1, and the register unit 710 in foregoing embodiments. The comparison unit 120 and the resistor array control unit 130 calibrate the DC offset voltage regarding one of the signal processing units 110_1-110—r according to a switch signal SSi and store the calibration result into the corresponding one of the register units 710_1-710—r. The calibration process has been described in foregoing embodiments therefore will not be described herein. As described above, in the present embodiment, the DC offset signals in multiple signal processing units 110_1-110—r can be calibrated by using a single resistor array control unit 130 and a single comparison unit 120, so that the circuit area can be reduced.
In summary, in an embodiment of the present disclosure, a resistor array control unit adjusts the resistances of resistor arrays located at the input terminal according to a DC offset signal and the sequence of bit codes until the DC offset signal enters a transient state, so that the resistor array control unit can compensate for the DC offset voltage in an output differential signal by using the currents generated by the resistor arrays and a compensation voltage. Accordingly, both the surface area and the power consumption of the circuit can be reduced. In addition, a DC offset calibration apparatus provided by an embodiment of the present disclosure adopts an open-circuit design such that the DC offset calibration apparatus can instantly respond to the compensation state thereof and allow the resistor array control unit to adjust the resistances of the resistor arrays constantly. On the other hand, in a DC offset calibration system provided by an embodiment of the present disclosure, the same comparison unit and resistor array control unit may be shared by multiple signal processing units, and the calibrated control signals can be temporarily stored in register units, so that the DC offset calibration operation can be performed less number of times and both the surface area and the power consumption of the circuit can be reduced.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the disclosed embodiments without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.