Patent Application
20250132065
The present disclosure relates to a deformable mirror and an X-ray device.
A technique for analyzing X-ray is widely used in academic fields and industrial societies. In recent years, the development of X-ray microscopes has progressed rapidly, and it has been reported that a resolution of 50 nm or less is achieved. Since X-rays have a wavelength extremely shorter than that of visible light, it is expected to achieve a resolution of 1 nm or less in principle. In order to further improve the resolution of X-ray microscopes, it is essential to improve the performance of an X-ray optics for collecting X-rays or imaging X-rays.
Examples of an optical element used in the X-ray optics include a composite refractive lens using refraction, a Fresnel zone plate using diffraction, and an obliquely-incident total reflection mirror using reflection. Among them, the obliquely-incident total reflection mirror has an advantage that the utilization efficiency of X-rays is high and chromatic aberration is small. Furthermore, as an optics with no coma aberration, there is an Advanced Kirkpatrick-Baez (AKB) mirror optics using four obliquely-incident total reflection mirrors (see, for example, JP6478433B).
In order to make optical properties of the X-ray optics variable, a deformable mirror in which a piezoelectric element is attached to a total reflection mirror and the shape of the reflecting surface is controlled by the deformation amount of the piezoelectric element, is also used (see, for example, JP2021-21897A).
The shape accuracy required for the reflecting surface of an X-ray mirror is extremely severe, and for example, the shape accuracy of approximately 1 nm is required for a mirror size of approximately 100 mm. This is because the wavelength of X-rays is extremely shorter than that of visible light. It is not easy to achieve such shape accuracy even if the most advanced ultra-precision machining technology is applied, and it is necessary to repeat the ultra-high-precision shape measurement and the ultra-precision corrective machining based on the measurement result, and thus, the manufacturing of the X-ray mirror requires a very long period and an increased cost.
The present disclosure has been made in view of such a problem, and one exemplary aim thereof is to provide a technique for precisely adjusting the shape of the reflecting surface of the X-ray mirror.
A deformable mirror according to one aspect of the present disclosure comprises: a first substrate having a first surface and a second surface opposite to the first surface and made of a piezoelectric material; a reflecting electrode provided in the first surface and having a reflecting surface on which an X-ray is obliquely incident; a plurality of control electrodes arranged at intervals in a predetermined direction in the second surface; and a power supply structured to apply a voltage between the reflecting electrode and the plurality of control electrodes.
Another aspect of the present disclosure is an X-ray device. The X-ray device comprises: an X-ray optics including the deformable mirror according to one aspect of the present disclosure; and an X-ray detector structured to detect an X-ray emitted from the X-ray optics.
Yet another aspect of the present disclosure is an X-ray device. The X-ray device comprises: an X-ray optics including the deformable mirror according to one aspect of the present disclosure; and a sample holder structured to hold a sample to be irradiated with an X-ray emitted from the X-ray optics.
Note that arbitrary combinations of the abovementioned components and mutual replacement of the components and expressions of the present disclosure among methods, systems, or the like are also effective as aspects of the present disclosure.
Embodiments will now be described by way of examples only, with reference to the accompanying drawings which are meant to be exemplary, not limiting and wherein like elements are numbered alike in several Figures in which:
In the following, an embodiment for carrying out the present invention will be described in detail with reference to the drawings. Like reference characters denote like elements in the description, and repetitive description will be omitted as appropriate.
Before the present disclosure is described in detail, an outline will be described. The present disclosure relates to an X-ray mirror that reflects an X-ray, and relates to a deformable mirror that variably controls a shape of a reflecting surface using a piezoelectric material. An X-ray optics for focusing X rays or imaging X rays uses a curved mirror having a reflecting surface that is a concave or convex surface. The shape accuracy of the reflecting surface required in the X-ray optics is approximately 1 nm (2 nm in Peak-to-Valley (PV)), and even if the most-advanced ultra-precision machining technology is applied, it is not easy to realize the shape accuracy. An object of the present disclosure is not to achieve the shape accuracy of 1 nm only by machining, but to achieve the shape accuracy of 1 nm by variably controlling the shape of a reflecting surface finished with the shape accuracy of, for example, 2 nm to 5 nm (4 nm to 10 nm in PV) to combine machining and deformation. According to the present disclosure, since the machining accuracy of the reflecting surface can be reduced, the period and cost required for manufacturing the curved mirror can be reduced.
In the present disclosure, it is possible to simplify the structure as well as to control the shape of the reflecting surface more precisely by using the surface itself of the piezoelectric material as the reflecting surface, instead of attaching a piezoelectric element to the X-ray mirror. Further, by deforming the piezoelectric material in a direction perpendicular to the reflecting surface, it is possible to control the shape with a higher spatial frequency. In one example of the present disclosure, a piezoelectric single crystal material such as lithium niobate (LN) or lithium tantalate (LT) is used as a piezoelectric material for deforming the reflecting surface, instead of a piezoelectric ceramic material such as lead zirconate titanate (PZT). By using the piezoelectric single crystal material, the deformation amount can be linearly changed with respect to the applied voltage, and the deformation amount can be stably controlled.
Hereinafter, an embodiment for carrying out the present disclosure will be described in detail with reference to the drawings. Note that, in the description, the same elements are denoted by the same reference numerals, and redundant description thereof will be omitted as appropriate. In addition, in order to help understanding of the description, a dimensional ratio of respective components in each drawing does not necessarily match an actual dimensional ratio.
The deformable mirror 10 includes a first substrate 14, a second substrate 16, a reflecting electrode 18, a plurality of control electrodes 20a, 20b, 20c, 20d, 20e, 20f, 20g, and 20h (also collectively referred to as a control electrode 20), and a power supply 22.
In
The first substrate 14 is made of a piezoelectric material, for example, a piezoelectric single crystal material such as lithium niobate (LN) or lithium tantalate (LT). The first substrate 14 has a first surface 24 and a second surface 26 opposite to the first surface 24. The first surface 24 is provided with a reflecting electrode 18, and the second surface 26 is provided with a plurality of control electrodes 20a to 20h. The first substrate 14 is deformed according to a voltage applied between the reflecting electrode 18 and the plurality of control electrodes 20a to 20h. The first substrate 14 expands and contracts in the thickness direction (z direction) according to a voltage applied in the thickness direction (z direction), and is configured such that the thickness (height) from the second surface 26 to the first surface 24 changes. As the first substrate 14, for example, a 36-degree Y-cut LN substrate can be used. The thickness of the first substrate 14 is, for example, 0.1 mm or more and 10 mm or less, and preferably 0.2 mm or more and 2 mm or less.
The first surface 24 is configured so as to have the shape accuracy and the surface roughness equivalent to those of the reflecting surface 12. The shape accuracy (PV) of the first surface 24 is, for example, 10 nm or less, and preferably 2 nm or more and 5 nm or less. The surface roughness (Rms) of the first surface 24 is, for example, 0.5 nm or less, and preferably 0.05 nm or more and 0.2 nm or less. The shape accuracy and the surface roughness of the first surface 24 can be realized by performing known precision machining such as elastic emission machining (EEM) after rough machining such as cutting and mechanical polishing. The shape of the first surface 24 can be measured by an autocollimator, an X-ray interferometer, a visible light interferometer, a pencil beam method using X-rays, or the like. The first surface 24 is, for example, a convex surface or a concave surface having an arc shape, an elliptic shape, a hyperbolic curve shape, or a parabolic shape, and has a curvature only in one direction (for example, in the y direction). In the example of
The second substrate 16 is a member for supporting the first substrate 14. The second substrate 16 has a third surface 28 and a fourth surface 30 opposite to the third surface 28. The third surface 28 and the fourth surface 30 are, for example, polished flat surfaces. The third surface 28 is bonded to the plurality of control electrodes 20a to 20h, and is fixed to the first substrate 14 via the plurality of control electrodes 20a to 20h. The fourth surface 30 is fixed to a jig or the like for positioning the deformable mirror 10. A material of the second substrate 16 is not particularly limited. But, it is possible to use, for example, a single crystal material such as silicon, quartz, and sapphire. The material of the second substrate 16 may be the same piezoelectric material as that of the first substrate 14 or may be the same piezoelectric single crystal material as that of the first substrate 14. By using the same material for the first substrate 14 and the second substrate 16, it is possible to suppress deformation of the reflecting surface 12 due to a difference therebetween in the coefficient of thermal expansion caused by different materials. Note, when the thickness of the first substrate 14 is large, for example, when the first substrate 14 has a thickness of 5 mm or more, the deformable mirror 10 may not include the second substrate 16.
The reflecting electrode 18 is provided in the first surface 24 and has the reflecting surface 12 on which the X-ray 40 is obliquely incident. The reflecting electrode 18 has a thickness of, for example, 10 nm or more and 100 nm or less, and preferably has a thickness of 30 nm or more and 70 nm or less. The reflecting electrode 18 is provided, for example, so as to cover the first surface 24 entirely and have a uniform thickness over the entire first surface 24. As the reflecting electrode 18 has a uniform thickness, the reflecting surface 12 has a shape corresponding to the first surface 24, and has the shape accuracy and the surface roughness equivalent to those of the first surface 24. As a material of the reflecting electrode 18, nickel (Ni), chromium (Cr), rhodium (Rh), platinum (Pt), gold (Au), or the like can be used. The reflecting electrode 18 may be configured of a thin metal film of a single material, or may be configured as a laminated body of a plurality of thin metal films formed of different materials. The reflecting electrode 18 may include, for example, an adhesive layer made of Cr, Ti, or the like which comes into contact with the first surface 24, and a reflecting layer made of Rh, Pt, Au, or the like which is formed on the adhesive layer. The reflecting electrode 18 can be formed using a vapor deposition method or a sputtering method.
The reflecting surface 12 may be configured so as to function as a total reflection mirror based on a total reflection phenomenon, or may be configured as a multilayer mirror using Bragg reflection. In a case where the reflecting surface 12 is a multilayer mirror, the reflecting electrode 18 may include a multilayer film obtained by alternately and periodically laminating a plurality of first layers made of a heavy element and a plurality of second layers made of a light element. As the heavy element configuring the first layer, molybdenum (Mo), rhodium (Rh), tungsten (W), platinum (Pt), or the like can be used. As the light element configuring the second layer, beryllium (Be), carbon (C), silicon (Si), or the like can be used. The number of laminated multilayer films is, for example, approximately 10 to 100. The thickness of each of the first layer and the second layer is approximately 1 nm to 10 nm. The reflecting electrode 18 may be configured as a so-called multilayer super mirror, and may be configured such that the cycle length of the multilayer film (the sum of the thicknesses of the first layer and the second layer) changes in a depth direction. That is, at least one of the thickness of each of the plurality of first layers and the thickness of each of the plurality of second layers configuring the multilayer reflecting layer may vary depending on positions in the thickness direction.
The reflecting electrode 18 contains a material having conductivity, and preferably contains a material having high conductivity. In a case where the reflecting electrode 18 is configured of a thin metal film of a single material, it is possible to exhibit the conductivity by the metal material configuring the reflecting electrode 18. When the reflecting electrode 18 is configured as a multilayer mirror, it is possible to provide the multilayer mirror with high conductivity by combining the first layer (for example, W) and the second layer (for example, C) having conductivity. Note that, in a case where the multilayer mirror is configured of a material having low conductivity, for example, in a case where the first layer is tungsten carbide (WC) and the second layer is boron carbide (B4C), it is possible to provide the reflecting electrode 18 with the conductivity by using a metal material having high conductivity such as Cr as an adhesive layer between the first surface 24 of the first substrate 14 and the multilayer mirror. That is, the conductivity of the adhesive layer may be higher than the conductivity of the reflecting layer. Note that, in a case where the conductivity of the reflecting layer is high, the conductivity of the adhesive layer may be lower than the conductivity of the reflecting layer. That is, the conductivity of the reflecting layer may be higher than the conductivity of the adhesive layer.
The control electrode 20 is provided between the first substrate 14 and the second substrate 16, and is bonded to the second surface 26 and the third surface 28. The plurality of control electrodes 20a to 20h are arranged at intervals in a predetermined direction (for example, in the y direction). Widths w of the plurality of control electrodes 20a to 20h in a predetermined direction (for example, the y direction) are, for example, 0.5 mm or more and 10 mm or less, and preferably 1 mm or more and 6 mm or less. Intervals d among the plurality of control electrodes 20a to 20h in a predetermined direction (for example, the y direction) are, for example, 0.1 mm or more and 5 mm or less, and preferably 0.5 mm or more and 4 mm or less. Pitches p (the total of the width w and the interval d) of the plurality of control electrodes 20a to 20h in a predetermined direction (for example, the y direction) are, for example, 1 mm or more and 15 mm or less, and preferably 1.5 mm or more and 10 mm or less.
The plurality of control electrodes 20a to 20h are configured such that, for example, the width w, the interval d, and the pitch p in a predetermined direction (for example, the y direction) are fixed. At least one of the width w, the interval d, and the pitch p of the plurality of control electrodes 20a to 20h may be configured so as to be different from each other. For example, in a case where the angle θ of the X-ray 40 that is obliquely incident on the reflecting surface 12 varies depending on a place in a predetermined direction (for example, the y direction), the pitches p of the plurality of control electrodes 20a to 20h may be different from each other such that the effective pitch p×θ when viewed from the X-ray 40 is fixed.
The control electrode 20 is made of a metal material, and for example, nickel (Ni), chromium (Cr), copper (Cu), silver (Ag), gold (Au), or the like can be used. The control electrode 20 can be formed by, for example, forming a first metal film in the second surface 26 using a vapor deposition method or a sputtering method, forming a second metal film on the third surface 28, and then bonding the first metal film and the second metal film. The method for bonding the first metal film and the second metal film is not particularly limited, and any metal bonding technique can be used. As one example, a solid phase bonding technique such as normal temperature bonding or diffusion bonding can be used. Alternatively, the first metal film and the second metal film may be bonded by using a binder material such as metal nanoparticles and a conductive adhesive. The thickness of the control electrode 20 is not particularly limited, but is, for example, 100 nm or more and 1000 nm or less.
The power supply 22 applies a DC voltage between the reflecting electrode 18 and the control electrode 20. In order to avoid the complicatedness of the drawing, the power supply 22 is connected to only one control electrode 20a in
The length Lx2, in the x direction, of the second substrate 16 is larger than the length Lx1, in the x direction, of the first substrate 14, and is 10 mm or more and 100 mm or less, for example. By making the length Lx2, in the x direction, of the second substrate 16 larger than the length Lx1, in the x direction, of the first substrate 14, the control electrode 20 provided on the third surface 28 of the second substrate 16 is exposed so as to facilitate a connection between the power supply 22 and the control electrode 20. The length, in the y direction, of the second substrate 16 is equal to the length Ly, in the y direction, of the first substrate 14. The length, in the y direction, of the second substrate 16 may be larger or smaller than the length Ly, in the y direction, of the first substrate 14.
Each of the plurality of control electrodes 20a to 20h is formed on the third surface 28 to extend in the x direction while forming a belt shape. The lengths, in the x direction, of the plurality of control electrodes 20a to 20h are larger than the length Lx1, in the x direction, of the first substrate 14, and is equal to the length Lx2, in the x direction, of the second substrate 16, for example. The lengths, in the x direction, of the plurality of control electrodes 20a to 20h may be shorter than the length Lx2, in the x direction, of the second substrate 16.
Each of the plurality of control electrodes 20a to 20h is bonded to the first substrate 14 in a bonding region 32 indicated by a broken line in a center portion of the first substrate 14 in
As illustrated in
When ±500 V is applied to each of the two adjacent control electrodes 20 (for example, the control electrodes 20a and 20b), a difference in height between the convex portion and the concave portion is approximately 20 nm, and the maximum value of the deformation amount is smaller than that in a case where PZT is used as the piezoelectric material. However, such a deformation amount is sufficient to correct a shape error of approximately 5 nm (approximately 10 nm in PV).
According to the present embodiment, since the shape of reflecting surface 12 can be variably controlled while irradiating the reflecting surface 12 with the X-ray 40, the shape of the reflecting surface 12 can be adjusted later so as to be optimal in the X-ray optics in which the deformable mirror 10 is embedded. For example, by measuring the shape of the reflecting surface 12 through a pencil beam method using X-rays, it is possible to precisely measure and adjust the shape of the reflecting surface 12 on the spot in a state where the deformable mirror 10 is embedded in the X-ray optics.
The deformable mirror 10A includes a first substrate 14, a second substrate 16, a reflecting electrode 18, a plurality of control electrodes 20a to 20h, a power supply 22A, and a backside electrode 34.
The backside electrode 34 is provided on the fourth surface 30 of the second substrate 16. The backside electrode 34 is provided, for example, so as to cover the fourth surface 30 entirely. The backside electrode 34 is made of a metal material, and for example, nickel (Ni), chromium (Cr), copper (Cu), silver (Ag), gold (Au), or the like can be used. The backside electrode 34 can be formed using a vapor deposition method or a sputtering method. The thickness of the backside electrode 34 is not particularly limited, but is, for example, 10 nm or more and 1000 nm or less, and preferably 30 nm or more and 200 nm or less.
The power supply 22A applies a DC voltage between the reflecting electrode 18 and the control electrode 20, and applies a DC voltage between the backside electrode 34 and the control electrode 20. In the example in
In the example in
According to the present modification, since the structure of the deformable mirror 10A can be made symmetric in the thickness direction (for example, the z direction) with respect to the control electrode 20 as a center, it is possible to more suitably suppress the deformation of the reflecting surface 12 due to temperature change. In addition, it is possible to make the deformation amounts in the x direction, the y direction, and the z direction of the first substrate 14 and the second substrate 16 when a voltage is being applied, the same. As a result, since there is a difference between the deformation amount of the first substrate 14 and the deformation amount of the second substrate 16, it is possible to prevent the deformable mirror 10A from curving like a bimetal. According to the present modification, the shape of the reflecting surface 12 can be more stably controlled with a higher reproducibility.
In the example in
The X-ray source 90 generates the X-rays 92 for observing the sample 88. The type of the X-ray source 90 is not particularly limited, and an X-ray tube, a large-sized synchrotron radiation facility such as Spring-8, an X-ray free electron laser, or the like can be used. In a case of using a small-sized device such as an X-ray tube as the X-ray source, the X-ray microscope 60 may include the X-ray source 90. On the other hand, in a case of using a large-sized device such as a synchrotron radiation facility as the X-ray source 90, the X-ray microscope 60 may not include the X-ray source 90. The X-ray source 90 is configured so as to output hard X-rays of 2 keV or more, for example. The X-ray source 90 may generate monochromatic X-rays which have been monochromatized at a specific wavelength, or may generate continuous X-rays (white X-rays) including various wavelength components.
The illumination optics 62 is disposed between the X-ray source 90 and the sample holder 64. The illumination optics 62 is configured so as to focus the X-rays 92 from the X-ray source 90 on the sample holder 64. The illumination optics 62 is configured by a so-called KB (Kirkpatrick-Baez) mirror, and includes a horizontal concave mirror 70 and a vertical concave mirror 72. The horizontal concave mirror 70 and the vertical concave mirror 72 are disposed such that the normal directions of the respective reflecting surfaces thereof are orthogonal to each other. The reflecting surfaces of the horizontal concave mirror 70 and the vertical concave mirror 72 are configured by, for example, an elliptic concave surface having a focal point at the position of the sample holder 64. The illumination optics 62 may be configured by four curved mirrors similarly to the imaging optics 66 described later.
The sample holder 64 holds the sample 88 irradiated with the X-ray 94 emitted from the illumination optics 62. The sample holder 64 holds the sample 88 to be observed on an optical path of the X-ray 94. The configuration of the sample holder 64 is not particularly limited, and any configuration for fixing the position of the sample 88 can be used according to the characteristics of the sample 88. The sample holder 64 includes, for example, a stage device for adjusting the position of the sample 88 with respect to the optical path of the X-ray 94.
The imaging optics 66 is disposed between the sample holder 64 and the X-ray detector 68. The imaging optics 66 is configured so as to form an image of the X-ray 96 from the sample holder 64 on the X-ray detector 68. The imaging optics 66 is a so-called AKB (Advanced Kirkpatrick-Baez) mirror optics, and includes four curved mirrors 74, 76, 78, and 80. The imaging optics 66 is configured so as to realize, for example, an image magnification of approximately 100 times to 1,000 times.
The imaging optics 66 can be configured as, for example, a Wolter I type mirror in which a hyperbolic concave mirror and an elliptic concave mirror are combined. In this case, the first curved mirror 74 is a horizontal hyperbolic concave mirror, and has a reflecting surface configured by, for example, a concave surface with a hyperbolic curve having a focal point at the position of the sample holder 64. The second curved mirror 76 is a vertical hyperbolic concave mirror, and has a reflecting surface configured by, for example, a concave surface with a hyperbolic curve having a focal point at the position of the sample holder 64. The third curved mirror 78 is a horizontal elliptic concave mirror, and has a reflecting surface configured by, for example, an elliptic concave surface having a first focal point at the position of the X-ray detector 68 and having a second focal point shared with the first curved mirror 74. The fourth curved mirror 80 is a vertical elliptic concave mirror, and has a reflecting surface configured by, for example, an elliptic concave surface having a first focal point at the position of the X-ray detector 68 and having a second focal point shared with the second curved mirror 76.
In the example in
The X-ray detector 68 detects an X-ray 98 emitted from the imaging optics 66. The X-ray detector 68 is, for example, an X-ray camera for detecting a two-dimensional image of the X-ray 98. The configuration of the X-ray detector 68 is not particularly limited. However, for example, a direct conversion type or an indirect conversion type image sensor (CCD or CMOS sensor) can be used. In order to further increase the definition, the X-ray detector 68 may include an optical element such as a lens for enlarging a visible light image converted by a scintillator, and an image sensor for imaging the enlarged visible light image.
At least one of the illumination optics 62 and the imaging optics 66 includes the deformable mirror 10, 10A, or 10B according to the embodiment or modifications described above. At least one of the horizontal concave mirror 70 and the vertical concave mirror 72 configuring the illumination optics 62 may be configured by the deformable mirror 10, 10A, or 10B. The deformable mirror 10, 10A, or 10B may be applied only to the horizontal concave mirror 70, applied only to the vertical concave mirror 72, or applied to both of the horizontal concave mirror 70 and the vertical concave mirror 72. Furthermore, at least one of the four curved mirrors 74-80 configuring the imaging optics 66 may be configured by the deformable mirror 10, 10A, or 10B. The deformable mirror 10, 10A, or 10B may be applied to any one, two, or three of the four curved mirrors 74-80, or may be applied to all of them. By using the deformable mirror 10, 10A, or 10B for at least one of the illumination optics 62 and the imaging optics 66, it is possible to improve the characteristics of the X-ray optics while reducing a period and a cost required for manufacturing mirrors.
The deformable mirror 10, 10A, or 10B according to the present disclosure is preferably applied to the imaging optics 66 requiring a higher accuracy. In particular, it is preferable to apply the deformable mirror 10, 10A, or 10B to each of the horizontal curved mirror and the vertical curved mirror that are arranged near the sample holder 64 and serve as objective lenses in the imaging optics 66. The configuration in
The X-ray microscope 60 may further include an X-ray spectrometer (not illustrated) disposed between the X-ray source 90 and the illumination optics 62. The X-ray spectrometer is configured so as to monochromatize the X-rays 92 from the X-ray source 90. The X-ray spectrometer may be a crystal spectrometer such as a two-crystal monochromator, and may be configured such that the X-ray wavelength becomes variable by changing the crystal angle. The X-ray microscope 60 can provide XAFS (X-ray Absorption Fine Structure) imaging by making the X-ray wavelength variable. Since the X-ray microscope 60 is configured by the X-ray optics with less chromatic aberration, XAFS images with a high resolution (for example, 50 nm or less) can be provided only by simply varying the X-ray wavelength.
The deformable mirror 10, 10A, or 10B according to the present disclosure can be applied to any X-ray device, and in particular, can be applied to an X-ray optics such as a light focusing optics or an imaging optics provided in the X-ray device. Examples of the X-ray device include a scanning-type X-ray microscope and an X-ray telescope in addition to the imaging type X-ray microscope illustrated in
The scanning-type X-ray microscope may include a light focusing optics for focusing X-rays on the sample holder, and at least one of X-ray mirrors configuring the light focusing optics may be the deformable mirror 10, 10A, or 10B according to the present disclosure. In a case of the scanning-type X-ray microscope, the resolution is determined by the beam size of the X-rays focused by the light focusing optics. By using the deformable mirror 10, 10A, or 10B according to the present disclosure, it is possible to improve the characteristics of the light focusing optics and improve the resolution of the scanning-type X-ray microscope. As the light focusing optics in the scanning-type X-ray microscope, the horizontal concave mirror 70 and the vertical concave mirror 72 similar to the illumination optics 62 in
The X-ray telescope may include an imaging optics that forms an image of an X-ray from a celestial body to be observed on the X-ray detector, and at least one of X-ray mirrors configuring the imaging optics may be the deformable mirror 10, 10A, or 10B according to the present disclosure. As the imaging optics in the X-ray telescope, for example, an AKB mirror optics similar to the imaging optics 66 in
The deformable mirror 10, 10A, or 10B according to the present disclosure may be used as a wave front compensation optical element in any X-ray device. In a case of being used as the wave front compensation optical element, by slightly deforming the reflecting surface 12 which is a substantially flat surface, to obtain a shape opposite to the wave front aberration of the obliquely incident X-ray 40, for example, thereby compensating for the wave front aberration of the incident X-ray 40. The X-ray in which the wave front aberration is compensated by the deformable mirror 10, 10A, or 10B may be subjected to further machining by an X-ray optical element such as a lens or a mirror, may be emitted to irradiate a sample held by the sample holder, or may be detected by the X-ray detector.
The present disclosure has been described above based on the embodiment. A person skilled in the art could understand that the present disclosure is not limited to the above embodiments, various design changes are available, and various modifications are available, and such modifications are also within the scope of the present disclosure.
According to the present disclosure, it is possible to precisely adjust a reflecting surface of an X-ray mirror.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-163085 | Oct 2021 | JP | national |
This application claims priority for Japanese Patent Application No. 2021-163085 filed on Oct. 1, 2021, and International Patent Application No. PCT/JP2022/035337, filed on Sep. 22, 2022, the entirety thereof is incorporated herein by reference.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2022/035337 | 9/22/2022 | WO |
