A deformation detection sensor according to an embodiment of the present invention will be described below with reference to the drawings.
A detection sensor 10 according to the present embodiment includes, for example, a sensor body 11 which measures quantity of state on deformation of an outer surface of a vehicle due to a contact or a bump between the outer surface of the vehicle and an object, a reference signal generation section 12, and a control section 13.
The sensor body 11 is provided with, for example, a plurality of electrodes 22, . . . , 22 formed on a piezoelectric film 21, and signal wires 23 connected to each of the electrodes 22. As shown in
The piezoelectric film 21 is obtained by forming a polymer piezoelectric substance such as polarized polyvinylidene fluoride in a film shape. Each of the electrodes 22, . . . , 22 which detects electric charges as voltage is formed of an electrically conductive thin plate, metal paste or vapor-deposited metal.
The piezoelectric film 21 is grounded, as shown in
Note that the sensor body 11 is provided with a differential circuit equivalent to a differential circuit 24 shown in
The reference signal generation section 12 generates the reference signal β of which the frequency (e.g. greater or equal to several kHz) is higher than that of the maximum frequency of voltage signal (e.g. less than several hundred Hz) intended to be measured at the sensor body 11, and inputs the reference signal β to the reference signal input terminal 21a of the piezoelectric film 21.
As shown in
The voltage evaluation section 41 of the deformation quantity evaluation section 33 generates the deformation quantity signal by performing time integration of the strain rate measurement signal a output from the low pass filter (LPF) 31 as shown in
The capacitance evaluation section 42 measures the power of the reference signal β output from the band pass filter (BPF) 32, and obtains a capacitance by, for example, retrieving the value from a predetermined capacitance map based on the measured value. Note that the predetermined capacitance map shows the power change of the reference signal β in response to changes in the capacitance of the piezoelectric film 21. In the capacitance map, for example, it is shown that the power of the reference signal β increases as the capacitance increases.
Furthermore, the capacitance evaluation section 42 obtains a temperature by, for example, retrieving the value from a predetermined temperature map based on the value retrieved from the capacitance map. Note that the predetermined temperature map shows the capacitance change in response to changes in the temperature of the piezoelectric film 21. In the temperature map, for example, it is shown that the capacitance increases as the temperature increases.
Subsequently, the capacitance evaluation section 42 outputs the retrieved value of the temperature obtained from the temperature map, as a temperature of the piezoelectric film 21, to the deformation quantity signal correction section 43.
The deformation quantity signal correction section 43 corrects the deformation quantity signal input from the deformation quantity evaluation section 33 in accordance with the temperature input from the capacitance evaluation section 42 so as to cancel out power fluctuation due to the temperature change of the piezoelectric film 21, and outputs the corrected deformation quantity signal.
More specifically, as shown in
On the other hand, by conducting the reference signal β to the piezoelectric film 21 in which the reference signal β does not interfere with the strain rate measurement signal α output from the piezoelectric film 21, measuring the capacitance change and temperature of the piezoelectric film 21 based on the power fluctuation of the reference signal β in response to the temperature change of the piezoelectric film 21, and canceling out power fluctuation of the piezoelectric film in accordance with the temperature, as shown in
As has been described above, according to the deformation detection sensor 10 of the present embodiment, it is possible to obtain the information on the temperature of the piezoelectric film 21 as well as the deformation of the piezoelectric film 21 by inputting the reference signal β to the piezoelectric film 21, and measuring the strain rate measurement signal α due to the deformation and the reference signal β out of the output signal (i.e., synthesized signal γ) of the piezoelectric film 21 separately to each other. In addition, the information on the deformation of the piezoelectric film based on the strain rate measurement signal a can be corrected in response to the temperature of the piezoelectric film 21 based on the reference signal β. Furthermore, it is possible to improve the detection accuracy and the reliability of the information on the deformation of the piezoelectric film 21.
Note that the capacitance evaluation section 42 measures the capacitance of the piezoelectric film 42 based on the power of the reference signal β output from the band pass filter (BPF) 32 in the above-described embodiment, but it may be arranged so as to measure a dielectric constant of the piezoelectric film 42 instead of the capacitance. In this case, the capacitance evaluation section 42 is provided with a dielectric constant map which shows the power change of the reference signal P in response to dielectric constant change of the piezoelectric film 21 and a temperature map which shows the dielectric constant change in response to the temperature change of the piezoelectric film 21. Consequently, the temperature of the piezoelectric film 21 is obtained by retrieving the temperature map based on a value of the dielectric constant retrieved from the dielectric constant map.
Also note that a detection filter may be adopted instead of the band pass filter 32 in the above-described embodiment.
While a preferred embodiment of the invention has been described and illustrated above, it should be understood that this is exemplary of the invention and is not to be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit or scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, and is only limited by the scope of the appended claims.
Number | Date | Country | Kind |
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2006-276317 | Oct 2006 | JP | national |