Claims
- 1. A water-soluble composition of matter free of an added buffering agent for electrolytically depositing a chromium oxide coating on a metal substrate comprising a complexing agent for complexing a chrome bath buffer, said complexing agent being present in an amount sufficient to increase the formation of a chromium oxide coating upon introduction of the complexing agent for a chrome bath buffer into said composition, said composition further comprising a trivalent chromium compound, a weak chelating agent, an optional conductivity enhancing cation, an optional depolarizer, and an optional surfactant.
- 2. A water-soluble composition of matter for electrolytically depositing a chromium oxide coating on a metal substrate comprising a complexing agent for a chrome bath buffer, said complexing agent being present in an amount sufficient to form a complex with any chrome bath buffer introduced into said composition of matter by dragout and thereby reduce chromium deposition and increase chromium oxide deposition on a substrate when electrolytically depositing a chromium oxide coating with said composition, said composition also comprising a trivalent chromium compound, a weak chelating agent, an optional conductivity enhancing cation, an optional depolarizer, and an optional surfactant.
- 3. The composition of claim 2 wherein:
- said complexing agent comprises mannitol or a gluconate;
- said conductivity enhancing cation comprises an alkali metal cation;
- said depolarizer comprises a bromide salt and; said weak chelating agent comprises a formic acid anion.
- 4. The composition of claim 3 where said alkali metal cation comprises a potassium cation and said depolarizer comprises potassium bromide.
- 5. The composition of claim 4 wherein said trivalent chromium compound comprises basic chromium (III) sulfate.
- 6. The water-soluble composition of claim 5 comprising:
- said complexing agent in an amount from about 0.1 to about 5 mols;
- said trivalent chromium compound in an amount from about 0.03 to about 0.5 mols;
- said conductivity enhancing cation in an amount from about 0.3 to about 5.0 mols;
- said depolarizer in an amount from about 0.01 to about 0.15 mols; and
- said weak chelating agent in an amount from about 0.04 to about 0.7 mols.
- 7. A process of depositing a chromium oxide coating on a metal substrate comprising passing an electrically conductive substrate through a first trivalent chromium bath containing a buffering agent and electrolytically depositing chromium on said substrate to obtain a chromium coated substrate followed by directly passing said chromium coated substrate into a second trivalent chromium bath composition, said second trivalent chromium bath containing said first trivalent chromium bath buffering agent introduced into said second trivalent chromium bath as dragout, said second trivalent chromium bath composition comprising a complexing agent for said buffering agent, in an amount sufficient to increase the formation of a chromium oxide coating, by complexing any of said buffering agent introduced into said second bath by dragout to minimize or eliminate any chrome deposition in said second trivalent chromium bath, said second trivalent chromium bath also comprising a trivalent chromium compound, a weak chelating agent, an optional conductivity enhancing cation, an optional depolarizer, and an optional surfactant, and electrolytically forming a chromium oxide coating on said chromium coated substrate.
- 8. A process of depositing a chromium oxide coating on a metal substrate comprising passing an electrically conductive substrate through a first trivalent chromium bath containing a buffering agent and electrolytically depositing chromium on said substrate to obtain a chromium coated substrate followed by directly passing said chromium coated substrate into a second trivalent chromium bath composition, said second trivalent bath composition comprising a complexing agent for said buffering agent to complex said buffering agent introduced into said second trivalent chromium bath composition by dragout, said complexing agent being present in an amount sufficient to reduce chromium deposition and increase chromium oxide deposition in said second trivalent chromium bath, said composition also comprising a trivalent chromium compound, a weak chelating agent, an optional conductivity enhancing cation, an optional depolarizer, and an optional surfactant, and electrolytically forming a chromium oxide coating on said chromium coated substrate.
- 9. The process of claim 8 wherein:
- said complexing agent comprises mannitol or a gluconate and said buffering agent comprises a boron oxide;
- said conductivity enhancing cation comprises an alkali metal cation;
- said depolarizer comprises a bromide salt and; said weak chelating agent comprises a formic acid anion.
- 10. The process of claim 9 where said alkali metal cation comprises a potassium cation and said depolarizer comprises potassium bromide.
- 11. The process of claim 10 wherein said trivalent chromium compound comprises basic chromium (III) sulfate.
- 12. The process as in claim 11 where said composition comprises:
- said complexing agent for said buffering agent in an amount from about 0.1 to about 5 mols;
- said trivalent chromium compound in an amount from about 0.03 to about 0.5 mols;
- said conductivity enhancing cation in an amount from about 0.3 to about 5.0 mols;
- said depolarizer in an amount from about 0.01 to about 0.15 mols; and
- said weak chelating agent in an amount from about 0.04 to about 0.7 mols.
- 13. The process of claim 12 wherein said substrate comprises iron, steel, chromium, nickel, tin, zinc, copper, aluminum, magnesium or titanium.
- 14. The process of claim 12 wherein said complexing agent comprises mannitol.
- 15. The process of claim 12 wherein said substrate comprises steel and said chromium oxide coating is coated with an organic coating wherein said organic coating is an epoxy coating, a phenolic coating or a buff-vinyl coating.
RELATED APPLICATIONS
This application is a continuation in part application of U.S. patent application Ser. No. 08/469,020 filed Jun. 6, 1995, now abandoned and which is incorporated herein by reference.
US Referenced Citations (17)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
469020 |
Jun 1995 |
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