Patent Grant
8819385
The invention relates to field of non volatile memories and especially to managing a flash memory.
Due to inaccuracies during the programming procedure and charge loss due to time and temperature (also known as retention), the measured levels during a Read operation suffers from detection errors. The small dimensions of the Flash cells result in cells that can store very small amounts of charge, enhancing the effects of inaccuracies due to programming and retention. Thus, new single level cells (SLC) and multi level cells (MLC) devices have significantly increased bit error rate (BER), decreasing the reliability of the device.
BER is a parameter that a flash memory device manufacturer commits to vis a vis its customers, expressing the maximum proportion of wrongly read bits (wrongly read bits/total number of bits) that users of the flash memory device need to expect at any time during the stipulated lifetime of the flash memory device e.g. 10 years.
MLC means that the physical levels in the cell are, to an acceptable level of certainty, statistically partitionable into multiple distinguishable regions, plus a region corresponding to zero, such that digital values each comprising multiple bits can be represented by the cell. In contrast, in single-level cells, the physical levels in the cell are assumed to be statistically partitionable into only two regions, one corresponding to zero and one other, non-zero region, such that only one bit can be represented by a single-level cell.
Flash devices are organized into (physical) pages. Each page contains a section allocated for data (512 bytes-8 Kbytes) and a small amount of bytes (16-32 bytes for every 512 data bytes) containing redundancy and back pointers. The redundancy bytes are used to store error correcting information, for correcting errors which may have occurred during the page Read. Each Read and Program operation is performed on an entire page. A number of pages are grouped together to form an Erase Block (EB). A page cannot be erased unless the entire EB which contains it is erased.
An important measure of a Flash device quality is the number of times (Np) it may be reprogrammed and the period that it can store information (usually 10 years) before irrecoverable errors occur.
The higher the number of program-erase cycles, the higher the BER. Thus, today's MLC with 2 bits per cell devices can perform around Np=10,000 cycles and 10 years retention before the allocation of 16 bytes of redundancy per 512 bytes of data bytes becomes insufficient to correct errors.
SLC devices usually perform better but obtain a much lower density and hence their prices are much higher. Note that following Np program-erase cycles the device is still operational but the BER is higher.
One factor that increases the number of program-erase cycles is the fact that an entire block must be erased at once. For example, when a single page of a programmed block is to be modified, in many cases (e.g. SD cards and USB drives), the block is copied to an erased block and the relevant page is replaced in the process. Thus, a single page change required the programming of an entire block and an erasure of a block. This process is usually referred to as a read modify write operation.
A method for accessing a flash memory, the method includes: (i) receiving a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells; (ii) accessing multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block comprises multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner; and (iii) accessing the set of flash memory cells.
A method for writing to a flash memory, the method includes: receiving a write request to write content, wherein the write request is associated with a logical address; writing the write content to a new set of flash memory cells that follow a last set of flash memory cells that were written to; and updating at least one mapping data structure out of multiple mapping data structures to reflect the writing to the new set of flash memory cells; wherein the multiple mapping data structures are of different granularity; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block comprises multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner.
A mapping data structure of a certain granularity can store only information associated with the certain granularity.
The logic address of the set of flash memory cells includes a logical erase block address and a logical inter erase block address. The method can include accessing a first mapping data structure that maps logical erase block addresses to physical erase block addresses and accessing a second mapping data structure that maps logical inter erase block addresses to physical inter erase block addresses.
The second data can be stored in the flash memory.
The method can include generating the multiple mapping data structures; wherein the second mapping data structure is written to the flash memory after a predefined number of physical pages of the erase block were written.
The second mapping data structure maps logical addresses of pages to physical addresses of pages; wherein evenly sized logical pages are stored in evenly sized physical pages.
The first mapping data structure can be stored, during at least one period, in memory unit that differs from the flash memory.
The method can include accessing a first mapping data structure, a second data structure and a third data structure; wherein the first mapping data structure maps logical erase block addresses to physical erase block addresses, the second mapping data structure maps logical page addresses to indexes into the third mapping data structure; wherein the third data structure maps the indexes to locations of sets of flash memory cells; wherein at least one erasure block includes two sets of flash memory cells that differ from each other by their size.
The at least two sets of memory cells can store information that is encoded by a variable encoding process.
The method can include fetching a mapping data structure from a memory unit that differs from the flash memory and storing the fetched mapping data structure in the flash memory.
A system having flash memory management capabilities, the system includes a management module that is coupled to a flash memory, another memory unit, and an interface; wherein the interface receives a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells; wherein the flash memory includes multiple erase blocks; wherein the management module is adapted to: access multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells; wherein at least one mapping data structure is stored in an erase block and wherein the erase block includes multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner; and access the set of flash memory cells.
A system having flash memory management capabilities, the system includes a management module that is coupled to a flash memory, another memory unit, and an interface; wherein the interface receives a write request to write content, wherein the write request is associated with a logical address; wherein the flash memory comprises multiple erase blocks. The management module is adapted to: write the write content to a new set of flash memory cells that follow a last set of flash memory cells that were written to; and update at least one mapping data structure out of multiple mapping data structures to reflect the writing to the new set of flash memory cells; wherein the multiple mapping data structures are of different granularity; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block comprises multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner.
A mapping data structure of a certain granularity can store only information associated with the certain granularity.
The logic address of the set of flash memory cells can include a logical erase block address a logical inter erase block address. The management module can access a first mapping data structure that maps logical erase block addresses to physical erase block addresses and access a second mapping data structure that maps logical inter erase block addresses to physical inter erase block addresses.
During at least one point in time the second data can be stored in the flash memory.
The management module can generate the multiple mapping data structures; wherein the system writes the second mapping data to the flash memory after a predefined number of physical pages of the erase block were written.
The second mapping data structure can map logical addresses of pages to physical addresses of pages; wherein evenly sized logical pages are stored in evenly sized physical pages.
The first mapping data structure can be stored, during at least one period, in the other memory unit.
The management module can access a first mapping data structure, a second data structure and a third data structure; wherein the first mapping data structure maps logical erase block addresses to physical erase block addresses, the second mapping data structure maps logical page addresses to indexes into the third mapping data structure; wherein the third data structure maps the indexes to locations of sets of flash memory cells; wherein at least one erasure block includes two sets of flash memory cells that differ from each other by their size.
The at least two sets of memory cells can store information that is encoded by a variable encoding process.
The management module can fetch a mapping data structure from the other memory unit and can store the fetched mapping data structure in the flash memory.
Further details, aspects, and embodiments of the invention will be described, by way of example only, with reference to the drawings.
The subject matter regarded as the invention is particularly pointed out and distinctly claimed in the concluding portion of the specification. The invention, however, both as to organization and method of operation, together with objects, features, and advantages thereof, may best be understood by reference to the following detailed description when read with the accompanying drawings.
It will be appreciated that for simplicity and clarity of illustration, elements shown in the figures have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, where considered appropriate, reference numerals may be repeated among the figures to indicate corresponding or analogous elements.
In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the present invention.
Because the apparatus implementing the present invention is, for the most part, composed of electronic components and circuits known to those skilled in the art, circuit details will not be explained in any greater extent than that considered necessary as illustrated above, for the understanding and appreciation of the underlying concepts of the present invention and in order not to obfuscate or distract from the teachings of the present invention.
In the following specification, the invention will be described with reference to specific examples of embodiments of the invention. It will, however, be evident that various modifications and changes may be made therein without departing from the broader spirit and scope of the invention as set forth in the appended claims.
Furthermore, those skilled in the art will recognize that boundaries between the functionality of the above described operations are merely illustrative. The functionality of multiple operations may be combined into a single operation, and/or the functionality of a single operation may be distributed in additional operations. Moreover, alternative embodiments may include multiple instances of a particular operation, and the order of operations may be altered in various other embodiments.
The following terms may be construed either in accordance with any definition thereof appearing in the prior art literature or in accordance with the specification, or as follows:
Cell: A component of flash memory that stores one bit of information (in single-level cell devices) or n bits of information (in a multi-level device having 2n levels). Typically, each cell includes a floating-gate transistor. The variable n may or may not be an integer.
Flash memory: A non volatile memory (NVM) that includes cells that are erased block by block, each block typically comprising more than one page, but are written into and read from, page by page. Includes NOR-type flash memory, NAND-type flash memory, and PRAM, e.g. Samsung PRAM, inter alia, and flash memory devices with any suitable number of levels per cell, such as but not limited to two four or eight.
Logical page: a portion of typically sequential data, whose amount is typically less than or equal to a predetermined amount of data defined to be a page full of data, which has typically been defined by a host (data source/destination) or user thereof, as a page, and which is sent by the host to a flash memory device for storage and is subsequently read by the host from the flash memory device.
Physical Page: A portion, typically 512 or 2048 or 4096 bytes in size, of a flash memory e.g. a NAND or NOR flash memory device. Writing and reading is typically performed physical page by physical page, as opposed to erasing which can be performed only erase sector by erase sector. A few bytes, typically 16-32 for every 512 data bytes are associated with each page), for storage of error correction information. A typical block may include 32 512-byte pages or 64 2048-byte pages. Alternatively, a physical page is an ordered set (e.g. sequence or array) of flash memory cells which are all written in simultaneously by each write operation. The set typically includes a predetermined number of typically physically adjacent flash memory cells containing actual data written by the host and subsequently read by the host, as well as, typically error correction information and back pointers used for recognizing the true address of a page.
It has been shown that in order to decrease erase the number of program-erase cycles and in order to decrease BER several physical pages of an erase block should written in a sequential manner. In order to allow an assignment of logical addresses in a random manner—that is not bounded by the sequential writing manner—a mapping of logical to physical addresses is provided. For example, assuming that an erase block include physical pages PP(1)-PP(J) then a sequence of J write requests will result in writing content to the first physical page PP(1), to second physical page PP(2), till the J'th physical page—regardless of the logical addresses associated with the write requests. The sequence of write requests can include read request that do not interfere with the sequential writing to physical pages PP(1)-PP(J). The sequence of write requests usually follows an erasing of the erase block. If more than L write requests are received then more than an erase block is written to. Multiple mapping data structure are generated and maintained in order to facilitate the sequential writing and the random allocation of logical addresses.
One or more mapping data structure can be stored (at one or more point in time) in the flash memory and can be stored (during one or more periods) at another memory. A mapping data structure can be stored in the flash memory before a device is shut down, while the device remains shut down or after the entire erase block is written to.
Different ways to manage a logical to physical table may be implemented, according to different embodiments of the invention. One possibility is mapping logical to physical addresses in a page resolution. This can simplify the mapping scheme but can require a large space. For example, a flash memory of 16 GB with 4 KB long pages includes 4 Million pages. This requires a logical to physical table that include four million entries, each of three bytes long. This amount in 12 MB logical to physical table. Storing this table or even a small fraction of the table in SD/MMC controller is not practical and can result in a very high miss rate. For example—if the available space for storing mapping information us about 128 KB than only about one percent of the logical to physical table can be stored in that available space. It means that for almost each read page request, two pages should read from flash, one for data and one for table.
Therefore, other solutions may be required for system with area limitations. According to an aspect of the invention, an improved solution with respect to RAM size is suggested. Instead of mapping all the logical space into physical space in page resolution, it can be done by generating multiple mapping data structure of different granularity.
A mapping data structure stores information that maps between addresses. It can map between a logical address to a physical address, between a physical address to a semi-physical address, between a semi-physical address and a physical address and the like. A non limiting example of a mapping data structure is a mapping table although other data structures can be provided. Sets of flash memory cells are written in a sequential manner while mapping data structure facilitate the random allocation of logical addresses.
System 10 includes management module 20 that is connected to flash memory 30, another memory unit 40, and interface 50.
Interface 50 can receive an access request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells. Interface 50 can receive the request from a software or hardware components such as a host, an application, and the like.
Flash memory 30 includes multiple erase blocks such as erase blocks 32(1)-32(K). Each erase block can include multiple pages. For example.
Flash memory 30 can include multiple flash memory cell sets. A set of flash memory cells can include one or more flash memory cells. A set of flash memory cells can be a physical page, a portion of a physical page, can include at least one memory page, include multiple physical memory page, and the like.
A physical page can store a representation of an information unit, a fraction of a representation of an information unit, more than a single representation of an information unit and the like. Accordingly—in one case information unit representations are aligned with physical page boundaries (this is referred to as an aligned scenario) but in some cases information unit representations are not aligned with physical page boundaries (this is referred to as the misaligned scenario). The non-aligned scenario can occur, for example, when applying variable rate encoding.
The mapping between logical addresses and physical addresses should take into account the alignment (or misalignment) between information unit representations and physical pages. Accordingly—the aligned scenario can be managed by using two mapping data structures while misaligned scenario can be managed by using three mapping data structures.
Management module 20 can include software components, hardware components or a combination thereof. It can include at least one of the following circuitries or be connected to one or more of the following circuitries without including them: (i) erasing circuitry, (ii) writing circuitry, and (iii) reading circuitry.
Interface 50 can receive a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells.
Management module 20 receives the read request and in response accesses multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells.
At least one mapping data structure is stored in an erase block and wherein the erase block includes multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner.
Management module 20, in response to information obtained from the multiple mapping data structures access the set of flash memory cells and can read the set of flash memory cells.
A mapping data structure (such as first and second mapping data structures 61 and 62) of a certain granularity can store only information associated with the certain granularity. For example—first mapping data structure 61 does not store memory page level information and second mapping data structure 62 does not store erase block level mapping information.
First mapping data structure 61 can maps logical erase block addresses to physical erase block addresses. Second mapping data structure 62 can map logical inter erase block addresses to physical inter erase block addresses.
The logic address of the set of flash memory cells can include a logical erase block address a logical inter erase block address. Management module 40 can access first mapping data structure 61 with the logical erase block address and can access second mapping data structure 62 with the logical inter erase block address.
Management module 40 or another component (now shown) can generate the multiple mapping data structures. System 10 (or one of its components) can write the second mapping data structure 62 to flash memory 30 after a predefined number of physical pages of the erase block were written.
Interface 50 can receive a write request to write content, wherein the write request is associated with a logical address. Management module 20 can write the write content to a new set of flash memory cells that follow a last set of flash memory cells that were written to; and to update at least one mapping data structure to reflect the writing to the new set of flash memory cells.
Management module 20 can receive multiple write requests associated with the same logical address. It should update the one or more mapping data structures to point to the last (most updated) physical address that stores information associated with that logical address. This update can be perform in various manners. For example, management module 20 can invalidate all entries of the mapping data structure associated with that same logical address except the last entry of the group of entries.
System 11 of
Management module 40 can access first mapping data structure 61, second data structure 62 and third data structure 63.
First mapping data structure 61 maps logical erase block addresses to physical erase block addresses. Second mapping data structure 62 maps logical page addresses to indexes into third mapping data structure 63. Third data structure 63 maps the indexes to locations of sets of flash memory cells. Third data structure 63 is used to manage the misaligned scenario.
Referring back to
Method 300 starts by stage 310 of initialization. This stage can include receiving mapping data structure, generating mapping data structures, erasing one or more erase blocks and the like.
Stage 310 is followed by stage 320 of receiving a read request that is associated with a logical address that is mapped to a physical address of a set of flash memory cells.
Stage 320 is followed by stage 330 of accessing multiple mapping data structures of different granularity to obtain the physical address of the set of flash memory cells. During at least one point in time at least one mapping data structure is stored in an erase block. For example, a second mapping data that stores page level information can be written to an erase block after all the multiple physical pages of the erase block were written to. The multiple physical pages are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner.
Stage 330 can include checking, for an accessed mapping data structure, whether it is stored in the flash memory or in another memory bank. Stage 330 can also include fetching a mapping data structure to the flash memory or vice verse. For example—mapping data structures can be fetched from the flash memory after a device is power up and sent to the flash memory when the device is powered down.
Stage 330 is followed by stage 340 of accessing the set of flash memory cells. Stage 340 includes reading the content of the set of flash memory cells. Stage 340 uses the address of the set of memory cells that was retrieved during stage 330.
A mapping data structure of a certain granularity can store only information associated with the certain granularity.
The logic address of the set of flash memory cells can include a logical erase block address and a logical inter erase block address. In this case stage 340 can include accessing a first mapping data structure that maps logical erase block addresses to physical erase block addresses and accessing a second mapping data structure that maps logical inter erase block addresses to physical inter erase block addresses.
At a certain point in time the second data can be stored in the flash memory.
Method 300 can include one or more stage of method 400 (of
The second mapping data structure can map logical addresses of pages to physical addresses of pages. Evenly sized logical pages can be stored in evenly sized physical pages.
During at least one period a mapping data structure can be stored in another memory unit that differs from the flash memory. The other memory unit can be a Random Access Memory unit that temporarily stores the mapping data structure. while the
According to another embodiment of the invention logical pages are of different length than physical pages—they can even be of a varying length. In this case there is a need in additional mapping information that can assist in reading pages of different sizes. Accordingly, stage 430 can include accessing a first mapping data structure, a second data structure and a third data structure; wherein the first mapping data structure maps logical erase block addresses to physical erase block addresses, the second mapping data structure maps logical page addresses to indexes into the third mapping data structure. The third data structure maps the indexes to locations of sets of flash memory cells.
Method 400 starts by stage 410 of initialization.
Stage 410 is followed by stage 420 of receiving a write request to write content, wherein the write request is associated with a logical address.
Stage 420 is followed by stage 430 of writing the write content to a new set of flash memory cells that follow a last set of flash memory cells that were written to. Stage 430 implements a sequential writing scheme—one set of flash memory cells is written after the other.
Stage 430 is followed by stage 440 of updating at least one mapping data structure out of multiple mapping data structures to reflect the writing to the new set of flash memory cells. The multiple mapping data structures are of different granularity; wherein during at least one point in time at least one mapping data structure is stored in an erase block and wherein the erase block includes multiple physical pages that are written in a sequential manner and are associated with logical page addresses that are assigned in a random manner.
Stage 440 can include generating a mapping data structure. A mapping data structure can be generated, for example, when physical pages of a new erase block are written or when a previous mapping data structure can not serve a new writing sequence.
Conveniently, a mapping data structure of a certain granularity stores only information associated with the certain granularity.
The logic address of the set of flash memory cells can include a logical erase block address and logical inter erase block address. Stage 440 can include updating or generating a first mapping data structure that maps logical erase block addresses to physical erase block addresses and updating or generating a second mapping data structure that maps logical inter erase block addresses to physical inter erase block addresses.
During at least one point in time the second data is stored in the flash memory.
Stage 440 can include generating the multiple mapping data structures; wherein the second mapping data structure is written to the flash memory after a predefined number of physical pages of the erase block were written.
The second mapping data structure maps logical addresses of pages to physical addresses of pages; wherein evenly sized logical pages are stored in evenly sized physical pages.
During at least one period the first mapping data structure is stored in memory unit that differs from the flash memory.
Stage 440 can include updating or generating a first mapping data structure, a second data structure and a third data structure; wherein the first mapping data structure maps logical erase block addresses to physical erase block addresses, the second mapping data structure maps logical page addresses to indexes into the third mapping data structure; wherein the third data structure maps the indexes to locations of sets of flash memory cells; wherein at least one erasure block comprises at least two sets of flash memory cells that differ from each other by their size but store representations of information units of the same size.
The at least two sets of memory cells store information that is encoded by a variable encoding process.
Stage 440 can include writing a mapping data structure to a memory unit that differs from the flash memory and storing the fetched mapping data structure in the flash memory.
Any combination of methods 300 and 400 can be provided. System 10 and 11 can execute either one of these methods or a combination thereof.
The methods and/or processes may be implemented as a computer readable medium having a computer readable code embodied therein, the computer readable code including instructions for the carrying out of at least one of the above disclosed methods and processes.
While certain features of the invention have been illustrated and described herein, many modifications, substitutions, changes, and equivalents will now occur to those of ordinary skill in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Each module can include software, hardware, firmware, middleware or a combination thereof.
The processor and RAM unit can belong to a memory controller unit, but this is not necessarily so.
Thus, it is to be understood that the architectures depicted herein are merely exemplary, and that in fact many other architectures can be implemented which achieve the same functionality. In an abstract, but still definite sense, any arrangement of components to achieve the same functionality is effectively “associated” such that the desired functionality is achieved. Hence, any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components. Likewise, any two components so associated can also be viewed as being “operably connected,” or “operably coupled,” to each other to achieve the desired functionality.
In addition, the invention is not limited to physical devices or units implemented in non-programmable hardware but can also be applied in programmable devices or units able to perform the desired device functions by operating in accordance with suitable program code. Furthermore, the devices may be physically distributed over a number of apparatuses, while functionally operating as a single device.
However, other modifications, variations, and alternatives are also possible. The specifications and drawings are, accordingly, to be regarded in an illustrative rather than in a restrictive sense.
In the claims, the word ‘comprising’ does not exclude the presence of other elements or steps from those listed in a claim. Moreover, the terms “front,” “back,” “top,” “bottom,” “over,” “under” and the like in the description and in the claims, if any, are used for descriptive purposes and not necessarily for describing permanent relative positions. It is understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other orientations than those illustrated or otherwise described herein.
Furthermore, the terms “a” or “an,” as used herein, are defined as one or more than one. Also, the use of introductory phrases such as “at least one” and “one or more” in the claims should not be construed to imply that the introduction of another claim element by the indefinite articles “a” or “an” limits any particular claim containing such introduced claim element to inventions containing only one such element, even when the same claim includes the introductory phrases “one or more” or “at least one” and indefinite articles such as “a” or “an.” The same holds true for the use of definite articles. Unless stated otherwise, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms are not necessarily intended to indicate temporal or other prioritization of such elements. The mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to advantage.
This application claims priority from U.S. provisional patent application Ser. No. 61/166,814, dated Apr. 6, 2009 which is incorporated herein.
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