Claims
- 1. A device for treating silicon-containing gases at high temperatures, comprising:
- a heat-insulated, generally hollow housing having a top wall, a sidewall, and a bottom plate defining a reaction chamber and gas-inlet and gas-outlet openings respectively leading into and from said housing; and
- a plurality of inert resistance heaters which are heatable by the direct passage of an electric current therethrough and which are arranged in a standing, generally upright manner in said housing spaced from said top wall and bottom plate thereof such that they are arranged between said top wall and bottom plate in the general path of gases flowing between said openings so as to have direct contact therewith said gases, said standing resistance heaters terminating at their upper ends in an electrically conductive interconnection and each having at its lower end a separate lead leaving said housing through separate insulated openings in said bottom plate and terminating outside said reaction chamber and being star-connected in a balanced multiple-phase alternating current system.
- 2. The device according to claim 1, additionally including a pair of outer, concentric, forced-flow graphite cylinders which are arranged one inside the other and an inner concentric immersion tube which serves as the gas outlet opening which are disposed in said housing and between which said resistance heaters are arranged.
- 3. The device according to claim 1, additionally including a heat-exchanger unit comprising electrically-unheated gas conduits which are installed in said housing between said inert resistance heaters and said gas-outlet openings.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3024320 |
Jun 1980 |
DEX |
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Parent Case Info
This application is a continuation of application Ser. No. 268,967 filed June 1, 1981.
US Referenced Citations (3)
Foreign Referenced Citations (2)
Number |
Date |
Country |
574942 |
Apr 1933 |
DE2 |
1081426 |
May 1960 |
DEX |
Non-Patent Literature Citations (1)
Entry |
"Electrotechnische Grundlagen", pp. 4-7. |
Continuations (1)
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Number |
Date |
Country |
Parent |
268967 |
Jun 1981 |
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