Claims
- 1. A diamond rectifying element, comprising
- a semiconducting layer of highly-oriented diamond film, in which at least 80% of the surface area of said diamond film consists of (100) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, and simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent (100) crystal planes; and
- a pair of electrodes provided on a first face of said semiconductor layer.
- 2. A diamond rectifying element, comprising
- a semiconducting layer of highly-oriented diamond film in which at least 80% of the surface area of said diamond film consists of (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent (111) crystal planes; and
- a pair of electrodes provided on a first face of said semiconducting layer.
- 3. A diamond rectifying element according to claim 1 further comprising a high-resistant diamond layer of 10 .ANG. to l mm thickness and 10.sup.2 .OMEGA..cm or more of specific resistance between at least one of said electrodes and said semiconducting layer of highly-oriented diamond film.
- 4. A diamond rectifying element according to claim 2 further comprising a high-resistant diamond layer of 10 .ANG. to l mm thickness and 10.sup.2 .OMEGA..cm or more of specific resistance between at least one of said electrodes and said semiconducting layer of highly-oriented diamond film.
- 5. A diamond rectifying element according to claim 1 further comprising an insulating diamond basal layer consisting of a highly-oriented diamond film on a second face of said semiconducting layer opposite said first face.
- 6. A diamond rectifying element according to claim 2 further comprising an insulating diamond basal layer consisting of a highly-oriented diamond film on a second face of said semiconducting layer opposite said first face.
- 7. A diamond rectifying element according to claim 1 further comprising a nondiamond substrate on a second face of said semiconducting layer opposite said first face.
- 8. A diamond rectifying element according to claim 2 further comprising a nondiamond substrate on a second face of said semiconducting layer opposite said first face.
- 9. A diamond rectifying element according to claim 1 wherein each of said electrodes is a layer or multi-layer formed of a material or materials selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Pd, Ag, Sn, W, Pt, Au, Pb, the carbides and silicides of these substances, low-resistant diamond, silicon, silicon carbide, silicon nitride and boron nitride.
- 10. A diamond rectifying element according to claim 2 wherein each of said electrodes is a layer or multi-layer formed of a material or materials selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Pd, Ag, Sn, W, Pt, Au, Pb, the carbides and silicides of these substances, low-resistant diamond silicon, silicon carbide, silicon nitride and boron nitride.
- 11. A diamond rectifying element according to claim 1 wherein said highly-oriented diamond film is a p-type diamond film.
- 12. A diamond rectifying element according to claim 2 wherein said highly-oriented diamond film is a p-type diamond film.
- 13. A diamond rectifying element according to claim 11 wherein said p-type diamond film is a boron-doped diamond film.
- 14. A diamond rectifying element according to claim 12 wherein said p-type diamond film is a boron-doped diamond film.
- 15. A diamond rectifying element, comprising
- a semiconducting layer of highly-oriented diamond film, in which at least 80% of the surface area of said diamond film consists of (100) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent (100) crystal planes;
- a first electrode provided on a first face of said semiconducting layer; and
- a second electrode provided on a second face of said semiconducting layer opposite said first face.
- 16. A diamond rectifying element according to claim 15 further comprising a high-resistant diamond layer of 10 .ANG. to l mm thickness and 10.sup.2 .OMEGA..cm or more of specific resistance between said first electrode and said first face of said semiconducting layer of highly-oriented diamond film.
- 17. A diamond rectifying element according to claim 15 further comprising a nondiamond substrate between said second face of said semiconducting layer and said second electrode.
- 18. A diamond rectifying element according to claim 15 wherein each of said electrodes is a layer or multi-layer formed of a material or materials selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Pd, Ag, Sn, W, Pt, Au, Pb, the carbides and silicides of these substances, low-resistant diamond, silicon, silicon carbide, silicon nitride and boron nitride.
- 19. A diamond rectifying element according to claim 15 wherein said highly-oriented diamond film is a p-type diamond film.
- 20. A diamond rectifying element according to claim 19 wherein said p-type diamond film is a boron-doped diamond film.
- 21. A diamond rectifying element, comprising
- a semiconducting layer of highly-oriented diamond film, in which at least 80% of the surface area of said diamond film consists of (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent (111) crystal planes;
- a first electrode provided on a first face of said semiconducting layer; and
- a second electrode provided on a second face of said semiconducting layer opposite said first face.
- 22. A diamond rectifying element according to claim 21 further comprising a high-resistant diamond layer of 10 .ANG. to l mm thickness and 10.sup.2 .OMEGA..cm or more of specific resistance between said first electrode and said first face of said semiconducting layer of highly-oriented diamond film.
- 23. A diamond rectifying element according to claim 21 further comprising a nondiamond substrate between said second face of said semiconducting layer and said second electrode.
- 24. A diamond rectifying element according to claim 21 wherein each of said electrodes is a layer or multi-layer formed of a material or materials selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Pd, Ag, Sn, W, Pt, Au, Pb, the carbides and silicides of these substances, low-resistant diamond, silicon, silicon carbide, silicon nitride and boron nitride.
- 25. A diamond rectifying element according to claim 21 wherein said highly-oriented diamond film is a p-type diamond film.
- 26. A diamond rectifying element according to claim 25 wherein said p-type diamond film is a boron-doped diamond film.
Parent Case Info
This is a continuation of application Ser. No. 08/061,856 filed on 14 May 1993 now abandoned.
US Referenced Citations (16)
Foreign Referenced Citations (24)
Number |
Date |
Country |
421397A1 |
Apr 1991 |
EPX |
0445998 |
Sep 1991 |
EPX |
59-27754 |
Feb 1984 |
JPX |
59-137396 |
Aug 1984 |
JPX |
60-12747 |
Jan 1985 |
JPX |
61-3320 |
Jan 1986 |
JPX |
61-251158 |
Nov 1986 |
JPX |
64-55862 |
Mar 1989 |
JPX |
64-68966 |
Mar 1989 |
JPX |
1-158774 |
Jun 1989 |
JPX |
1-244399 |
Sep 1989 |
JPX |
2-273960 |
Nov 1990 |
JPX |
3-12966 |
Jan 1991 |
JPX |
3-94429 |
Apr 1991 |
JPX |
3-110866 |
May 1991 |
JPX |
3-120865 |
May 1991 |
JPX |
3-160731 |
Jul 1991 |
JPX |
3-263872 |
Nov 1991 |
JPX |
3-278463 |
Dec 1991 |
JPX |
3-278474 |
Dec 1991 |
JPX |
4-26161 |
Jan 1992 |
JPX |
4-26172 |
Jan 1992 |
JPX |
2243949A |
Nov 1991 |
GBX |
2252202 |
Jul 1992 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Geis, "Growth of textured diamond films on foreign substrates from attached seed crystals," Applied Physics Letters 55(6), Aug. 1989, pp. 550-552. |
Continuations (1)
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Number |
Date |
Country |
Parent |
61856 |
May 1993 |
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