Claims
- 1. A diamond semiconductor light-emitting device comprising:an n-type diamond semiconductor layer; a p-type diamond semiconductor layer formed while maintaining a predetermined interval between it and said n-type diamond semiconductor layer; and a high-quality undoped diamond semiconductor layer sandwiched between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer and fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%, wherein an exciton light emission that varies nonlinearly according to a current value is output from said undoped diamond semiconductor layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
- 2. The diamond semiconductor light-emitting device according to claim 1, wherein said n-type and p-type diamond semiconductor layers are each formed by doping with an impurity under a gas phase during gas phase synthesis using a CVD method.
- 3. A diamond semiconductor light-emitting device comprising:a high-quality n-type diamond semiconductor layer fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%; a high-quality p-type diamond semiconductor layer formed in contact with said n-type diamond semiconductor layer and fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%; and an activation region layer formed in an interface between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer, wherein an exciton light emission that varies nonlinearly according to a current value is output from the activation region layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
- 4. The diamond semiconductor light-emitting device according to claim 3, wherein said n-type and p-type diamond semiconductor layers are each formed with a high-quality undoped diamond semiconductor layer and by ion injection of an impurity in said undoped diamond semiconductor layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-089516 |
Mar 2000 |
JP |
|
Parent Case Info
This application is a divisional of U.S. application Ser. No. 09/731,789, filed Dec. 8, 2000.
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Kind |
5420879 |
Kawarada et al. |
May 1995 |
A |
5600156 |
Nishibayashi et al. |
Feb 1997 |
A |
Foreign Referenced Citations (1)
Number |
Date |
Country |
07-307487 |
Nov 1995 |
JP |