Claims
- 1. A method of making diamondlike carbon flakes comprising the steps of
- depositing carbon on a surface
- creating diamond bonds in said carbon by subjecting said carbon on said surface to a beam of ions, and
- removing diamondlike carbon flakes from said surfaces.
- 2. A method of making diamondlike flakes as claimed in claim 1 wherein the carbon is deposited on the surface of a target from an arc between two carbon electrodes.
- 3. A method of making diamondlike flakes as claimed in claim 2 including the step of
- ion beam sputtering the surface of the target while simultaneously depositing said carbon thereon.
- 4. A method of making diamondlike flakes as claimed in claim 3 wherein the surface of the target is sputtered by ions from a source forming a beam of argon ions.
- 5. A method of making diamondlike flakes as claimed in claim 4 wherein the ion beam sputtering and the carbon arc depositing are performed in a vacuum environment.
- 6. A method of making diamondlike flakes as claimed in claim 5 wherein the depositing and sputtering are performed at a pressure of about 1.times.10.sup.-4 torr.
- 7. A method of making diamondlike flakes as claimed in claim 5 wherein the target is positioned within 50 centimeters of both the source of argon ions and the carbon electrodes.
- 8. A method of making diamondlike flakes as claimed in claim 5 wherein the vacuum carbon arc has a low voltage between about 20 and about 40 volts.
- 9. A method of making diamondlike flakes as claimed in claim 5 wherein the vacuum carbon arc has a high current discharge between about 25 and about 200 amperes.
- 10. In a method of making diamondlike carbon flakes, the improvement comprising
- depositing carbon on a surface,
- creating diamond sp.sup.3 bonds in said carbon, and
- removing diamondlike carbon flakes from said surface.
- 11. A method of making diamondlike flakes as claimed in claim 10 wherein the carbon is deposited on the surface of a target from an arc between two carbon electrodes.
- 12. A method of making diamondlike flakes as claimed in claim 10 including the step of
- ion beam sputtering the carbon on the surface with ions having sufficient energy to create the diamond sp.sup.3 bonds therein.
- 13. A method of making diamondlike flakes as claimed in claim 12 wherein the energy in the ions is great enough to create diamond sp.sup.3 bonds sufficent to produce a bandgap between about 0.5 eV and about 2.8 eV and an index of refraction between about 1.8 and about 2.3.
- 14. A method of making diamondlike flakes as claimed in claim 13 wherein the carbon is deposited on the surface simultaneously with the ion beam sputtering.
- 15. A method of making diamondlike flakes as claimed in claim 14 wherein the ion beam sputtering and carbon depositing are performed in a vacuum environment.
- 16. A method of making diamondlike flakes as claimed in claim 15 wherein the depositing and sputtering are performed at a pressure of about 1.times.10.sup.-4 torr or less.
- 17. Diamondlike flakes made in accordance with the method of claim 10.
- 18. A diamondlike material having improved electrical and mechanical properties comprising
- carbon flakes having diamond sp.sup.3 bonds sufficient to produce a high chemical resistance and high mechanical hardness.
- 19. A diamondlike material as claimed in claim 18 wherein the diamondlike carbon flakes have a density between about 1.6 gm/cm.sup.3 and about 2.8 gm/cm.sup.3.
STATEMENT OF COPENDENCY
This application is a continuation-in-part of application Ser. No. 495,381 which was filed May 17, 1983 and issued as U.S. Pat. No. 4,437,962.
ORIGIN OF THE INVENTION
The invention described herein was made by an employee of the United States Government and may be manufactured or used by or for the Government without the payment of any royalties thereon or therefor.
US Referenced Citations (13)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1008618 |
Oct 1965 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Mathine et al., Chem. Abstracts 99, (1983), #148673. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
495381 |
May 1983 |
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