Dielectric ceramic composition and ceramic capacitor

Abstract

In a dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y; 0.1 to 0.4 mol % of an oxide of Mg; and 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the content of the oxide of the Ba, Ti and Zr is calculated by assuming that the oxide thereof is Ba(Ti1−xZrx)O3; the contents of the oxides of the Re and Mg being calculated by assuming that the oxides thereof are Re2O3 and MgO, respectively; the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn2O3, V2O5 and Cr2O3, respectively. A ratio of Ba/(Ti1−xZrx) ranges from about 1.000 to about 1.010 and x in Ti1−xZrx ranges from about 0.05 to about 0.26.

Description

FIELD OF THE INVENTION

The present invention relates to a ceramic capacitor and ceramic compositions therefor; and, more particularly, to reduction resistive dielectric ceramic compositions suitable for use as a dielectric layer of a ceramic capacitor having internal electrodes made of a base metal such as Ni and a ceramic capacitor fabricated by employing such ceramic compositions as a dielectric layer thereof.

BACKGROUND OF THE INVENTION

Recently, a base metal, e.g., Ni, is widely used in forming internal electrodes of multilayer ceramic capacitors for the purpose of reducing manufacturing costs. In case the internal electrodes are composed of the base metal, it is required that chip-shaped laminated bodies including therein the internal electrodes be sintered in a reductive atmosphere in order to prevent an oxidization of the internal electrodes. Accordingly, a variety of reduction resistive dielectric ceramic compositions have been developed.

Recent trend towards ever more miniaturized and dense electric circuits intensifies a demand for a further scaled down multilayer ceramic capacitor with higher capacitance. Keeping up with such demand, there has been made an effort to fabricate thinner dielectric layers and to stack a greater number of the thus produced dielectric layers.

However, when the dielectric layers are thinned out, a voltage applied to a unit thickness intrinsically increases. Accordingly, the operating life of the dielectric layers is shortened and thus a reliability of the multilayer ceramic capacitor is also deteriorated.

SUMMARY OF THE INVENTION

It is, therefore, an object of the present invention to provide highly reliable dielectric ceramic compositions and ceramic capacitors prepared by employing such dielectric ceramic compositions in forming dielectric layers thereof, wherein the dielectric ceramic compositions exhibit such electrical characteristics as a dielectric constant equal to or greater than 10,000, a capacitance variation of −80% to +30% (based on a capacitance obtained at a temperature of +25° C.) in the temperature range from −55° C. to +125° C., a dielectric loss “tan δ” of 10.0% or less and an accelerated life of 200,000 seconds or greater.

In accordance with a preferred embodiment of the present invention, there is provided a dielectric ceramic composition comprising: 100 mol part of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti 1−x Zr x )O 3 ; 0.25 to 1.5 mol part of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re 2 O 3 ; 0.1 to 0.4 mol part of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; and 0.03 to 0.6 mol part of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn 2 O 3 , V 2 O 5 and Cr 2 O 3 , respectively, wherein a ratio of Ba/(Ti 1−x Zr x ) ranges from about 1.000 to about 1.010 and x in Ti 1−x Zr x ) ranges from about 0.05 to about 0.26.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention will become apparent from the following description of a preferred embodiment given in conjunction with the accompanying drawing:

Drawing represents a schematic cross sectional view illustrating a multilayer ceramic capacitor.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Compound powders of BaTiO 3 , ZrO 2 , BaCO 3 , Re 2 O 3 , MgO, MnO 2 , V 2 O 5 , Cr 2 O 3 , Fe 2 O 3 and WO 3 were weighed in amounts as specified in the accompanying Tables 1-1 to 1-7 and mixed for about 20 hours by a wet method in a ball mill containing therein PSZ (partially sterilized zirconia) balls and water to thereby obtain a ceramic slurry. The produced ceramic slurry (containing 30% of water) was dehydrated and then dried by being heated at about 150° C. for 6 hours. It should be noted that “Re” is selected, e.g., from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y.

	TABLE 1
	Dielectric Composition (mol %)
	Rare Earth
Sample	(Re 2 O 3		Total		Ba/
No.	Element	Content	MgO	Mn 2 O 3	V 2 O 5	Cr 2 O 3	Content	MoO 3	Ba	Ti	Zr	(TiZr)
1&Asteriskpseud;	Ho	0.75	0.2	0.02	—	—	0.02	0.05	100.3	86	14	1.003
2&Asteriskpseud;	Ho	0.75	0.2	—	0.02	—	0.02	0.05	100.3	86	14	1.003
3&Asteriskpseud;	Ho	0.75	0.2	—	—	0.02	0.02	0.05	100.3	86	14	1.003
4	Ho	0.75	0.2	0.03	—	—	0.03	0.05	100.3	86	14	1.003
5	Ho	0.75	0.2	—	0.03	—	0.03	0.05	100.3	86	14	1.003
6	Ho	0.75	0.2	—	—	0.03	0.03	0.05	100.3	86	14	1.003
7	Ho	0.75	0.2	0.01	0.02	—	0.03	0.05	100.3	86	14	1.003
8	Ho	0.75	0.2	0.05	0.02	—	0.07	0.05	100.3	86	14	1.003
9	Ho	0.75	0.2	0.05	—	0.2	0.25	0.05	100.3	86	14	1.003
10	Ho	0.75	0.2	0.05	0.01	0.2	0.26	0.05	100.3	86	14	1.003
11	Ho	0.75	0.2	0.05	0.05	0.2	0.3	0.05	100.3	86	14	1.003
12	Ho	0.75	0.2	0.2	0.2	0.2	0.6	0.05	100.3	86	14	1.003
13	Ho	0.75	0.2	0.6	—	—	0.6	0.05	100.3	86	14	1.003
14	Ho	0.75	0.2	—	0.6	—	0.6	0.05	100.3	86	14	1.003
15	Ho	0.75	0.2	—	—	0.6	0.6	0.05	100.3	86	14	1.003
16&Asteriskpseud;	Ho	0.75	0.2	0.7	—	—	0.7	0.05	100.3	86	14	1.003
17&Asteriskpseud;	Ho	0.75	0.2	—	0.7	—	0.7	0.05	100.3	86	14	1.003
18&Asteriskpseud;	Ho	0.75	0.2	—	—	0.7	0.7	0.05	100.3	86	14	1.003
19&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0	100.3	86	14	1.003
20	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.025	100.3	86	14	1.003
21	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.05	100.3	86	14	1.003
22	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.1	100.3	86	14	1.003
23	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.2	100.3	86	14	1.003
24	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.3	100.3	86	14	1.003
25&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.4	100.3	86	14	1.003
26	Ho	0.75	0.2	0.025	0.05	0.2	0.275	0.05	100.3	86	14	1.003
27&Asteriskpseud;	Ho	0.00	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
28	Ho	0.25	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
29	Ho	0.5	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
30	Ho	1.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
31	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
32&Asteriskpseud;	Ho	2.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
33&Asteriskpseud;	Ho	4.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
34	Sm	0.25	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
35	Sm	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
36	Eu	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
37	Gd	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
38	Tb	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
39	Dy	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
40	Er	0.75	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
41	Tm	0.75	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
42	Yb	0.75	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
43	Yb	1.0	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
44	Y	1.0	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
45	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Dy	0.5
46	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Dy/	0.5/
	Yb	0.5
47	Sm/	0.2/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Ho/	0.5/
	Yb	0.1
48	Sm/	0.5	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Yb	1.0
49&Asteriskpseud;	Ho	0.75	0	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
50	Ho	0.75	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
51	Ho	0.75	0.4	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
52&Asteriskpseud;	Ho	0.75	0.5	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
53&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	99.7	86	14	0.997
54	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.0	86	14	1.000
55	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.5	86	14	1.005
56	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	101.0	86	14	1.010
57&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	101.5	86	14	1.015
58&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	100	0	1.005
59	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	95	5	1.005
60	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	80	20	1.005
61	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	74	26	1.005
62&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	70	30	1.005
	Dielectric Composition (mol %)
	Rare Earth
Sample	(Re 2 O 3		Total		Ba/
No.	Element	Content	MgO	Mn 2 O 3	V 2 O 5	Cr 2 O 3	Content	WO 3	Ba	Ti	Zr	(TiZr)
63&Asteriskpseud;	Ho	0.75	0.2	0.02	—	—	0.02	0.05	100.3	86	14	1.003
64&Asteriskpseud;	Ho	0.75	0.2	—	0.02	—	0.02	0.05	100.3	86	14	1.003
65&Asteriskpseud;	Ho	0.75	0.2	—	—	0.02	0.02	0.05	100.3	86	14	1.003
66	Ho	0.75	0.2	0.03	—	—	0.03	0.05	100.3	86	14	1.003
67	Ho	0.75	0.2	—	0.03	—	0.03	0.05	100.3	86	14	1.003
68	Ho	0.75	0.2	—	—	0.03	0.03	0.05	100.3	86	14	1.003
69	Ho	0.75	0.2	0.01	0.02	—	0.03	0.05	100.3	86	14	1.003
70	Ho	0.75	0.2	0.05	0.02	—	0.07	0.05	100.3	86	14	1.003
71	Ho	0.75	0.2	0.05	—	0.2	0.25	0.05	100.3	86	14	1.003
72	Ho	0.75	0.2	0.05	0.01	0.2	0.26	0.05	100.3	86	14	1.003
73	Ho	0.75	0.2	0.05	0.05	0.2	0.3	0.05	100.3	86	14	1.003
74	Ho	0.75	0.2	0.2	0.2	0.2	0.6	0.05	100.3	86	14	1.003
75	Ho	0.75	0.2	0.6	—	—	0.6	0.05	100.3	86	14	1.003
76	Ho	0.75	0.2	—	0.6	—	0.6	0.05	100.3	86	14	1.003
77	Ho	0.75	0.2	—	—	0.6	0.6	0.05	100.3	86	14	1.003
78&Asteriskpseud;	Ho	0.75	0.2	0.7	—	—	0.7	0.05	100.3	86	14	1.003
79&Asteriskpseud;	Ho	0.75	0.2	—	0.7	—	0.7	0.05	100.3	86	14	1.003
80&Asteriskpseud;	Ho	0.75	0.2	—	—	0.7	0.7	0.05	100.3	86	14	1.003
81&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0	100.3	86	14	1.003
82	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.025	100.3	86	14	1.003
83	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.05	100.3	86	14	1.003
84	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.1	100.3	86	14	1.003
85	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.2	100.3	86	14	1.003
86	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.3	100.3	86	14	1.003
87&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.4	100.3	86	14	1.003
88	Ho	0.75	0.2	0.025	0.05	0.2	0.275	0.05	100.3	86	14	1.003
89&Asteriskpseud;	Ho	0.00	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
90	Ho	0.25	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
91	Ho	0.5	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Dielectric Composition (mol %)
	Rare Earth
Sample	(Re 2 O 3		Total		Ba/
No.	Element	Content	MgO	Mn 2 O 3	V 2 O 5	Cr 2 O 3	Content	MoO 3	Ba	Ti	Zr	(TiZr)
92	Ho	1.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
93	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
94&Asteriskpseud;	Ho	2.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
95&Asteriskpseud;	Ho	4.0	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
96	Sm	0.25	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
97	Sm	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
98	Eu	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
99	Gd	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
100	Tb	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
101	Dy	0.75	0.3	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
102	Er	0.75	0.25	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
103	Tm	0.75	0.25	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
104	Yb	0.75	0.25	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
105	Yb	1.0	0.25	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
106	Y	1.0	0.25	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
107	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Dy	0.5
108	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Dy/	0.5/
	Yb	0.5
109	Sm/	0.2/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Ho/	0.5/
	Yb	0.1
110	Sm/	0.5/	0.2	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
	Yb	1.0
111&Asteriskpseud;	Ho	0.75	0	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
112	Ho	0.75	0.1	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
113	Ho	0.75	0.4	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
114&Asteriskpseud;	Ho	0.75	0.5	0.15	0.05	0.2	0.4	0.05	100.3	86	14	1.003
115&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	99.7	86	14	0.997
116	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.0	86	14	1.000
117	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	100.5	86	14	1.007
118	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	101.0	86	14	1.010
119&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.05	101.5	86	14	1.015
120&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	100	0	1.005
121	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	95	5	1.005
122	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	80	20	1.005
123	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	74	26	1.005
124&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.05	100.5	70	30	1.005
	Dielectric Composition (mol %)
				Addition
	Rare Earth			amounts
Sample	(Re 2 O 3		Total	(MoO 3 +	Ba/
No.	Element	Content	MgO	Mn 2 O 3	V 2 O 5	Cr 2 O 3	Content	WO 3 )	Ba	Ti	Zr	(TiZr)
125&Asteriskpseud;	Ho	0.75	0.2	0.02	—	—	0.02	0.025 +	100.3	86	14	1.003
								0.03
126&Asteriskpseud;	Ho	0.75	0.2	—	0.02	—	0.02	0.025 +	100.3	86	14	1.003
								0.03
127&Asteriskpseud;	Ho	0.75	0.2	—	—	0.02	0.02	0.025 +	100.3	86	14	1.003
								0.03
128	Ho	0.75	0.2	0.03	—	—	0.03	0.025 +	100.3	86	14	1.003
								0.03
129	Ho	0.75	0.2	—	0.03	—	0.03	0.025 +	100.3	86	14	1.003
								0.03
130	Ho	0.75	0.2	—	—	0.03	0.03	0.025 +	100.3	86	14	1.003
								0.03
131	Ho	0.75	0.2	0.01	0.02	—	0.03	0.025 +	100.3	86	14	1.003
								0.03
132	Ho	0.75	0.2	0.05	0.02	—	0.07	0.025 +	100.3	86	14	1.003
								0.03
133	Ho	0.75	0.2	0.05	—	0.2	0.25	0.025 +	100.3	86	14	1.003
								0.03
134	Ho	0.75	0.2	0.05	0.01	0.2	0.26	0.025 +	100.3	86	14	1.003
								0.03
135	Ho	0.75	0.2	0.05	0.05	0.2	0.3	0.025 +	100.3	86	14	1.003
								0.03
136	Ho	0.75	0.2	0.2	0.2	0.2	0.6	0.025 +	100.3	86	14	1.003
								0.03
137	Ho	0.75	0.2	0.6	—	—	0.6	0.025 +	100.3	86	14	1.003
								0.03
138	Ho	0.75	0.2	—	0.6	—	0.6	0.025 +	100.3	86	14	1.003
								0.03
139	Ho	0.75	0.2	—	—	0.6	0.6	0.025 +	100.3	86	14	1.003
								0.03
140&Asteriskpseud;	Ho	0.75	0.2	0.7	—	—	0.7	0.025 +	100.3	86	14	1.003
								0.03
141&Asteriskpseud;	Ho	0.75	0.2	—	0.7	—	0.7	0.025 +	100.3	86	14	1.003
								0.03
142&Asteriskpseud;	Ho	0.75	0.2	—	—	0.7	0.7	0.025 +	100.3	86	14	1.003
								0.03
143&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0	100.3	86	14	1.003
144	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.013 +	100.3	86	14	1.003
								0.01
145	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.025 +	100.3	86	14	1.003
								0.03
146	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.025 +	100.3	86	14	1.003
								0.05
147	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.1 +	100.3	86	14	1.003
								0.1
148	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.15 +	100.3	86	14	1.003
								0.15
149&Asteriskpseud;	Ho	0.75	0.2	0.05	0.1	0.1	0.25	0.2 +	100.3	86	14	1.003
								0.2
150	Ho	0.75	0.2	0.025	0.05	0.2	0.275	0.025 +	100.3	86	14	1.003
								0.03
151&Asteriskpseud;	Ho	0.00	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.03
152	Ho	0.25	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.03
153	Ho	0.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.03
154	Ho	1.0	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.03
155	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
156&Asteriskpseud;	Ho	2.0	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
157&Asteriskpseud;	Ho	4.0	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
158	Sm	0.25	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
159	Sm	0.75	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
160	Eu	0.75	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
161	Gd	0.75	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
162	Tb	0.75	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
163	Dy	0.75	0.3	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
164	Er	0.75	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
165	Tm	0.75	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
166	Yb	0.75	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
167	Yb	1.0	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
168	Y	1.0	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
169	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
	Dy	0.5						0.025
170	Ho/	0.5/	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
	Dy/	0.5/						0.025
	Yb	0.5
171	Sm/	0.2/	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
	Ho/	0.5/						0.025
	Yb	0.1
172	Sm/	0.5/	0.2	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
	Yb	1.0						0.025
173&Asteriskpseud;	Ho	0.75	0	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
174	Ho	0.75	0.1	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
175	Ho	0.75	0.4	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
176&Asteriskpseud;	Ho	0.75	0.5	0.15	0.05	0.2	0.4	0.025 +	100.3	86	14	1.003
								0.025
177&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.025 +	99.7	86	14	0.997
								0.025
178	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.025 +	100.0	86	14	1.000
								0.025
179	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	86	14	1.005
								0.025
180	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.025 +	101.0	86	14	1.010
								0.025
181&Asteriskpseud;	Ho	0.75	0.2	0.15	0.05	0.2	0.4	0.025 +	101.5	86	14	1.015
								0.025
182&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	100	0	1.005
								0.025
183	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	95	5	1.005
								0.025
184	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	80	20	1.005
								0.025
185	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	74	26	1.005
								0.025
186&Asteriskpseud;	Ho	1.5	0.2	0.15	0.05	0.2	0.4	0.025 +	100.5	70	30	1.005
								0.025

Thereafter, the dried ceramic slurry was ground and then calcined in air at about 800° C. for 6 hours. The calcined slurry was then crushed by employing a wet method in a ball mill added with ethanol for about 6 hours. Next, the crushed ceramic slurry was dried by being heated at about 150° C. for 6 hours, thereby obtaining the powder of the calcined ceramic slurry.

In a following step, a dielectric ceramic slurry was obtained by mixing and grinding 1000 g (100 parts by weight) of the powder of the dielectric ceramic slurry, 15 wt % of an organic binder and 50 wt % of water in a ball mill, wherein the organic binder includes acrylic ester polymer, glycerin, and a solution of condensed phosphate.

Next, the dielectric slurry was subjected to a vacuum air separator to remove air bubbles therefrom and formed into a thin film coated on a polyester film by using a reverse roll coater. Thus produced ceramic thin film on the polyester film was heated and dried at about 100° C. and then diced to thereby obtain square ceramic green sheets having a thickness of about 5 μm and a size of about 10 cm×10 cm.

Meanwhile, 0.9 g of ethyl cellulose dissolved in 9.1 g of butyl carbitol and 10 g of Nickel powder having an average diameter of about 0.5 μm were loaded and stirred in a stirrer for 10 hours to form a conductive paste for use in forming internal electrodes of ceramic capacitors. Thereafter, the conductive paste was printed on the prepared ceramic green sheets to form conductive patterns thereon and then the printed conductive paste was dried.

Subsequently, ten ceramic green sheets having the conductive patterns thereon were stacked against each other with the conductive patterns facing upward, thereby forming a laminated body. Every two neighboring sheets were disposed in such a manner that the conductive patterns provided thereon were shifted by one half of a pattern size along the length direction. The laminated body also included one or more ceramic dummy sheets stacked against each of the uppermost and the lowermost ceramic green sheets having conductive patterns thereon, the ceramic dummy sheets representing ceramic green sheets without having conductive patterns thereon.

Next, the laminated body was pressed with a load of about 40 tons at about 50° C. along the stacking direction of the ceramic sheets in the laminated body. Afterwards, the pressed laminated body was diced into a multiplicity of chip shaped ceramic bodies having a size of about 3.2 mm×1.6 mm.

Thereafter, Ni external electrodes were formed at two opposite sides of each chip shaped ceramic body by, e.g., a dipping method, one end portion of each of the internal electrodes being exposed to one of the two opposite sides of each chip shaped ceramic body. Then, the chip shaped ceramic bodies were loaded into a furnace capable of controlling an atmosphere therein and the organic binder contained in the loaded ceramic bodies was removed by heating the furnace in an N 2 atmosphere. Then, the binder-removed chip shaped ceramic bodies were sintered at about 1200° C. in a non-oxidative atmosphere with oxygen partial pressure being in 10 −5 to 10 −8 atm order range. Thereafter, the sintered chip-shaped ceramic bodies were re-oxidized in an oxidative atmosphere to thereby obtain multilayer ceramic capacitors as shown in the Drawing, wherein reference numerals 10, 12 and 14 in the Drawing represent dielectric layers, internal electrodes and external electrodes, respectively.

Tables 2-1 to 2-6 exhibit a measurement result of electrical characteristics obtained from the thus produced multilayer ceramic capacitors, wherein a thickness of each dielectric layer incorporated in the capacitors was about 3 μm.

The electrical characteristics of the multilayer ceramic capacitors were obtained as follows.

(A) Relative permittivity or dielectric constant ε s was computed based on a facing area of a pair of neighboring internal electrodes, a thickness of a dielectric layer positioned between the pair of neighboring internal electrodes, and the capacitance of a multilayer ceramic capacitor obtained under the condition of applying at 20° C. a voltage of 1.0 V (root mean square value) with a frequency of 1 kHz.

(B) Dielectric loss tan δ(%) was obtained under the same condition as established for measuring the permittivity cited above.

(C) resistivity (Ωcm) was acquired by measuring a resistance between a pair of external electrodes after DC 25 V was applied for 60 seconds at 20° C. The number following “E” in the notation of a resistivity value presented in the accompanying Tables 2-1 to 2-6 represents an order. For instance, 4.8E +12 represents 4.8×10 12 .

(D) Accelerated life (second) was obtained by measuring time period until an insulation resistivity (ρ) becomes 1×10 10 Ωcm in a DC electric field of 20 V/μm at 150° C.

(E) Capacitance variation ΔC/C 25 (%) was obtained by measuring capacitances at −55° C. and +125° C. in a thermostatic (or constant temperature) oven under the condition of applying a voltage of 1 V (rms value) with a frequency of 1 kHz, wherein C 25 represents a capacitance at 25 C. and ΔC represents the difference between C 25 and a capacitance measured at −55° C. or 125° C.

TABLE 2
	Sinter-				Capacitance
	ing			Resistivity	Variation	Accel-
	Tem-			(Ω cm) at	Δc/c 25 (%)	erated
Sample	perature	Permit-	Tan δ	Room	−55°	85°	Life
Number	(° C.)	tivity	(%)	Temperature	C.	C.	(sec)
1&Asteriskpseud;	1200	17900	10.0	5.7E+12	−60	−70	112000
2&Asteriskpseud;	1200	18100	9.8	6.4E+12	−56	−71	149000
3&Asteriskpseud;	1200	17800	9.9	6.5E+12	−55	−68	98000
4	1200	17500	8.8	5.3E+12	−55	−71	220000
5	1200	17400	8.7	5.8E+12	−50	−70	231000
6	1200	17000	8.3	5.7E+12	−50	−70	241000
7	1200	15900	7.2	4.8E+12	−48	−72	270000
8	1200	14900	7.0	4.9E+12	−45	−71	269000
9	1200	15400	6.9	4.5E+12	−47	−71	277000
10	1200	12800	5.3	4.0E+12	−42	−72	302000
11	1200	13200	5.3	3.9E+12	−44	−73	318000
12	1200	13300	5.2	2.7E+12	−41	−73	322000
13	1200	11900	3.9	3.1E+12	−40	−74	358000
14	1200	10500	3.6	2.4E+12	−41	−75	389000
15	1200	11600	3.7	1.9E+12	−40	−74	379000
16&Asteriskpseud;	1200	9800	2.9	1.8E+12	−35	−76	514000
17&Asteriskpseud;	1200	9900	3.1	1.2E+12	−36	−78	530000
18&Asteriskpseud;	1200	9500	2.7	8.0E+11	−34	−77	548000
19&Asteriskpseud;	1200	15900	5.9	4.3E+12	−44	−71	158000
20	1200	16400	6.3	3.4E+12	−43	−71	218000
21	1200	16900	6.8	5.6E+12	−47	−72	275000
22	1200	17600	7.9	5.3E+12	−50	−74	318000
23	1200	18000	8.2	6.6E+12	−49	−75	329000
24	1200	18300	8.5	4.7E+12	−52	−76	376000
25&Asteriskpseud;	1200	1880	10.7	7.2E+12	−55	−81	479000
26	1200	14800	5.8	5.7E+12	−48	−73	297000
27&Asteriskpseud;	1200	18200	12.8	4.5E+12	−60	−68	157000
28	1200	17400	9.3	4.2E+12	−56	−70	218000
29	1200	16900	7.5	5.5E+12	−54	−72	238000
30	1200	14500	7.1	5.9E+12	−53	−72	364000
31	1200	12300	5.6	7.0E+12	−47	−73	497000
32&Asteriskpseud;	1200	9900	4.1	8.1E+12	−44	−74	663000
33&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
34	1200	17300	9.8	6.1E+12	−55	−73	207000
35	1200	14500	7.3	5.5E+12	−52	−73	221000
36	1200	14800	7.8	7.8E+12	−53	−74	228000
37	1200	12900	8.9	5.9E+12	−54	−75	248000
38	1200	13300	8.2	1.7E+12	−56	−72	215000
39	1200	12800	7.9	3.2E+12	−52	−73	273000
40	1200	14400	6.2	7.2E+12	−49	−73	210000
41	1200	14900	9.5	8.5E+12	−53	−75	238000
42	1200	11400	8.7	4.3E+12	−52	−76	247000
43	1200	15700	7.5	5.9E+12	−47	−72	229000
44	1200	18200	7.7	7.7E+12	−46	−73	255000
45	1200	16500	8.3	4.9E+12	−53	−74	218000
46	1200	14300	7.0	8.6E+12	−50	−73	279000
47	1200	12900	7.7	4.3E+12	−53	−72	285000
48	1200	15300	8.2	3.3E+11	−54	−73	289000
49&Asteriskpseud;	1200	19700	10.5	6.0E+12	−56	−69	254000
50	1200	18800	8.7	6.4E+12	−51	−74	233000
51	1200	13700	5.6	4.3E+12	−45	−77	221000
52&Asteriskpseud;	1200	9800	3.2	8.4E+12	−43	−82	196000
53&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
54	1200	11200	3.3	2.1E+12	−42	−73	418000
55	1200	14800	5.2	5.2E+12	−44	−72	348000
56	1200	17600	8.2	4.3E+12	−50	−70	221000
57&Asteriskpseud;	1200	19200	11.2	6.4E+12	−55	−67	63000
58&Asteriskpseud;	1200	9500	7.8	5.9E+12	−52	−71	327000
59	1200	11700	6.3	5.5E+12	−46	−73	346000
60	1200	14300	5.6	4.2E+12	−44	−75	374000
61	1200	12500	4.2	4.7E+12	−43	−73	412000
62&Asteriskpseud;	1200	9700	3.4	3.6E+12	−41	−71	447000
63&Asteriskpseud;	1200	17600	10.2	5.7E+12	−59	−71	132000
64&Asteriskpseud;	1200	18100	9.8	6.4E+12	−58	−72	134000
65&Asteriskpseud;	1200	17800	9.9	6.5E+12	−56	−76	127000
66	1200	17800	8.3	6.2E+12	−54	−73	213000
67	1200	17400	8.9	4.8E+12	−50	−72	221000
68	1200	17300	9.0	5.3E+12	−52	−72	209000
69	1200	15800	7.9	3.8E+12	−47	−73	296000
70	1200	15600	8.3	4.4E+12	−45	−72	285000
71	1200	14900	8.2	4.1E+12	−48	−73	281000
72	1200	12900	7.3	3.9E+12	−43	−75	329000
73	1200	13100	7.4	3.7E+12	−43	−72	354000
74	1200	13200	7.1	2.4E+12	−42	−75	312000
75	1200	10900	5.2	3.3E+12	−44	−73	489000
76	1200	11300	4.9	2.9E+12	−42	−74	463000
77	1200	10900	4.7	2.4E+12	−41	−73	475000
78&Asteriskpseud;	1200	9700	3.8	2.8E+12	−36	−75	558000
79&Asteriskpseud;	1200	9500	3.5	1.8E+12	−37	−74	512000
80&Asteriskpseud;	1200	9200	3.7	1.3E+12	−35	−73	568000
81&Asteriskpseud;	1200	14900	5.9	4.1E+12	−45	−72	164000
82	1200	16800	7.1	3.8E+12	−44	−69	238000
83	1200	17300	7.7	5.7E+12	−48	−75	218000
84	1200	17900	8.1	5.8E+12	−50	−74	241000
85	1200	18200	8.9	4.5E+12	−49	−72	318000
86	1200	18900	9.5	4.4E+12	−52	−76	367000
87&Asteriskpseud;	1200	19200	11.6	6.7E+12	−55	−81	428000
88	1200	14800	5.8	5.5E+12	−44	−72	295000
89&Asteriskpseud;	1200	18600	12.8	4.4E+12	−57	−69	168000
90	1200	18300	9.6	4.7E+12	−53	−71	206000
91	1200	17200	7.4	5.6E+12	−51	−71	226000
92	1200	16400	6.8	6.2E+12	−54	−75	263000
93	1200	13200	5.4	6.7E+12	−49	−72	437000
94&Asteriskpseud;	1200	9800	3.9	7.6E+12	−43	−73	554000
95&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
96	1200	18700	8.9	3.1E+12	−56	−74	208000
97	1200	15000	7.6	5.3E+12	−51	−72	243000
98	1200	14300	7.3	6.8E+12	−54	−75	243000
99	1200	13200	8.4	6.4E+12	−51	−73	222000
100	1200	12800	7.8	2.3E+12	−50	−75	273000
101	1200	12600	6.7	3.7E+12	−51	−71	264000
102	1200	14300	8.3	6.5E+12	−57	−73	243000
103	1200	13800	9.2	8.1E+12	−58	−71	245000
104	1200	12800	8.5	4.8E+12	−56	−73	231000
105	1200	14800	7.3	5.3E+12	−46	−75	251000
106	1200	16900	7.9	7.3E+12	−44	−74	233000
107	1200	15300	8.5	5.3E+12	−54	−78	239000
108	1200	14300	7.2	8.1E+11	−49	−78	242000
109	1200	12700	7.9	7.3E+12	−48	−74	264000
110	1200	14300	8.5	6.3E+12	−56	−74	274000
111&Asteriskpseud;	1200	18800	10.7	5.9E+12	−62	−67	278000
112	1200	17800	8.4	6.7E+12	−58	−70	229000
113	1200	14500	6.1	5.3E+12	−47	−77	253000
114&Asteriskpseud;	1200	8800	2.9	3.3E+12	−35	−84	201000
115&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
116	1200	12300	3.4	2.3E+12	−40	−79	396000
117	1200	15200	5.6	5.7E+12	−43	−74	374000
118	1200	16300	8.1	4.7E+12	−56	−67	238000
119&Asteriskpseud;	1200	18300	12.1	2.4E+12	−60	−78	89000
120&Asteriskpseud;	1200	9400	7.3	5.6E+12	−55	−73	318000
121	1200	12500	6.7	6.6E+12	−51	−72	335000
122	1200	13200	6.1	6.2E+12	−45	−73	359000
123	1200	11800	4.7	7.3E+12	−46	−75	422000
124&Asteriskpseud;	1200	9800	3.7	6.3E+12	−43	−74	439000
125&Asteriskpseud;	1200	18300	11.0	7.8E+12	−60	−73	154000
126&Asteriskpseud;	1200	18000	10.2	5.4E+12	−56	−73	143000
127&Asteriskpseud;	1200	17900	9.9	6.2E+12	−55	−76	147000
128	1200	17300	8.9	7.3E+12	−55	−77	208000
129	1200	17200	9.3	6.3E+12	−49	−74	219000
130	1200	16900	9.2	2.3E+12	−50	−70	226000
131	1200	15400	8.2	3.9E+12	−46	−74	320000
132	1200	15500	8.4	4.3E+12	−44	−72	332000
133	1200	14700	8.1	2.1E+12	−44	−74	312000
134	1200	13200	7.5	4.2E+12	−42	−74	398000
135	1200	13400	7.4	8.7E+12	−41	−74	400000
136	1200	13200	7.2	5.4E+12	−44	−76	394000
137	1200	11500	6.0	4.2E+12	−45	−74	478000
138	1200	12300	5.8	3.2E+12	−44	−74	495000
139	1200	10000	4.6	2.9E+12	−42	−74	454000
140&Asteriskpseud;	1200	9400	4.2	5.8E+12	−39	−78	576000
141&Asteriskpseud;	1200	9300	3.5	4.7E+12	−38	−77	548000
142&Asteriskpseud;	1200	9100	3.9	4.3E+12	−37	−74	579000
143&Asteriskpseud;	1200	3600	5.4	4.9E+12	−47	−73	163900
144	1200	17300	6.7	5.8E+12	−45	−70	247000
145	1200	16800	7.4	7.2E+12	−49	−72	264000
146	1200	16900	7.7	6.6E+12	−51	−70	277000
147	1200	16700	8.3	8.3E+12	−48	−74	296000
148	1200	19900	8.9	8.8E+12	−53	−76	352000
149&Asteriskpseud;	1200	18700	10.9	9.1E+12	−56	−80	448000
150	1200	15500	6.3	6.5E+12	−45	−73	277000
151&Asteriskpseud;	1200	17500	12.9	4.7E+12	−58	−70	209000
152	1200	19200	9.2	4.6E+12	−52	−69	218000
153	1200	17700	7.8	5.2E+12	−53	−70	234000
154	1200	16600	6.4	6.3E+12	−55	−78	289000
155	1200	14400	5.5	5.8E+12	−48	−75	398000
156&Asteriskpseud;	1200	9500	3.5	7.0E+12	−44	−74	493000
157&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
158	1200	18300	9.2	4.3E+12	−55	−73	212000
159	1200	15700	7.8	4.9E+12	−50	−70	231000
160	1200	15400	8.1	5.8E+12	−53	−74	253000
161	1200	13900	8.1	5.9E+12	−52	−75	247000
162	1200	13200	7.7	6.7E+12	−51	−73	254000
163	1200	12600	6.9	5.3E+12	−49	−74	253000
164	1200	14400	7.3	4.4E+12	−58	−75	243000
165	1200	13600	9.2	4.7E+12	−60	−70	251000
166	1200	12900	8.3	5.6E+12	−58	−71	249000
167	1200	14100	8.0	6.2E+12	−47	−74	244000
168	1200	15500	7.7	7.3E+12	−43	−72	212000
169	1200	14800	8.4	6.3E+12	−55	−75	246000
170	1200	14300	7.6	2.3E+12	−50	−76	247000
171	1200	13300	7.9	3.9E+12	−47	−76	252000
172	1200	14500	8.3	6.3E+11	−56	−74	263000
173&Asteriskpseud;	1200	18400	11.0	5.9E+12	−60	−70	269000
174	1200	17900	8.6	3.7E+12	−59	−69	237000
175	1200	14700	6.7	2.4E+12	−48	−76	246000
176&Asteriskpseud;	1200	8900	3.1	3.3E+12	−40	−82	196000
177&Asteriskpseud;	1200	Incapable of obtaining a sintered ceramic with
		high density
178	1200	13100	3.3	2.9E+12	−39	−76	374000
179	1200	14800	5.9	2.4E+12	−45	−76	348000
180	1200	16600	8.8	4.1E+12	−53	−66	243000
181&Asteriskpseud;	1200	17900	11.5	3.3E+12	−59	−74	91000
182&Asteriskpseud;	1200	9300	8.8	2.3E+12	−56	−72	363000
183	1200	13200	8.2	5.2E+12	−52	−73	382000
184	1200	14600	7.5	3.9E+12	−47	−72	402000
185	1200	12200	6.4	5.8E+12	−47	−77	432000
186&Asteriskpseud;	1200	9000	4.9	5.9E+12	−44	−75	453000

As clearly seen from Tables 1-1 to 1-7 and Tables 2-1 to 2-6, multilayer ceramic capacitors with highly improved reliability having relative permittivity ε s equal to or greater than 10,000, capacitance variation ΔC/C 25 within the range from −80% to +30% at temperatures ranging from −55° C. to +125° C., tan δ of 10.0% or less and accelerated life of 200,000 seconds or greater could be obtained from the above samples sintered in a non-oxidative atmosphere even at a temperature of 1200° C. or lower in accordance with the present invention.

However, samples 1 to 3, 16 to 19, 25, 27, 32, 33, 49, 52, 53, 57, 58, 62 to 65, 78 to 87, 89, 94, 95, 111, 114, 115, 119, 120, 124 to 127, 140 to 143, 149, 151, 156, 157, 173, 176, 177, 181, 182, 186 (marked with “&Asteriskpseud;” at the column of sample numbers in Tables) could not satisfy the above-specified electrical characteristics. Therefore, it appears that such samples fall outside a preferable compositional range of the present invention.

The reasons why the preferable compositional range for the dielectric ceramics in accordance with the present invention should be limited to certain values will now be described.

First, when the content of an oxide of a rare-earth element represented by Re is 0 mol part in terms of Re 2 O 3 (i.e., assuming the oxide of Re is in the form of Re 2 O 3 ) as in the samples 27, 89 and 151, the tan δ thereof goes over 10.0%; whereas when the oxide of Re is set to be 0.25 mol part in terms of Re 2 O 3 as in samples 28, 90 and 152, the desired electrical characteristics can be successfully obtained.

Further, when the content of the oxide of the rare-earth element Re is 2.0 mol part in terms of Re 2 O 3 as in the samples 32, 94 and 156, the dielectric constant of the produced multilayer ceramic capacitors may become equal to or less than 10,000. However, when the content of the oxide of Re is set to be 1.5 mol part in terms of Re 2 O 3 as in the samples 31, 93 and 155, the desired electrical characteristics can be successfully obtained.

Accordingly, the preferable range of the content of oxide of the rare-earth element Re is from 0.25 to 1.5 mol part in terms of Re 2 O 3 .

It is noted that same effects can be produced regardless of whether a single rare-earth element is used or two or more of rare-earth elements are used together as long as the above-described preferable content range of the rare-earth element Re is satisfied.

When the content of an oxide of Mg is 0 mol part in terms of MgO as in the samples 49, 111 and 173, the tan δ goes over 10.0%; whereas when the oxide of Mg is set to be 0.1 mol part in terms of MgO as in samples 50, 112 and 174, the desired electrical characteristics can be successfully obtained.

In addition, when the content of the oxide of Mg is 0.5 mol part in terms of MgO as in the samples 52, 114, 176, the relative permittivity of the produced multilayer ceramic capacitors may become equal to or less than 10,000 and the capacitance variation ΔC/C 25 of the produced multilayer ceramic capacitors may deviate from the range from −80% to +30% when the temperature varies from −55° C. to +125° C.; and accordingly, the desired accelerated life cannot be obtained. However, when the content of the oxide of Mg is set to be 0.4 mol part in terms of MgO as in samples 51, 113 and 175, the desired electrical characteristics can be successfully obtained.

Accordingly, the content of the oxide of Mg desirably ranges from 0.1 to 0.4 mol part in terms of MgO.

When the content of an oxide of each element Mn, V or Cr is 0.02 mol part in terms of Mn 2 O 3 , V 2 O 5 or Cr 2 O 3 , as in the samples 1 to 3, 63 to 65 and 125 to 127, the tan δ thereof goes over 10.0% or the desired accelerated life of the produced multilayer ceramic capacitors may not be obtained; whereas when the total content of the oxides of Mn, V and Cr is set to be 0.03 mol part in terms of Mn 2 O 3 , V 2 O 5 and Cr 2 O 3 , as in the samples 4 to 7, 66 to 68 and 128 and 130, the desired characteristics can be successfully attained.

Further, when the content of an oxide of Mn, V or Cr is 0.7 mol part in terms of Mn 2 O 3 , V 2 O 5 or Cr 2 O 3 , as in the samples 16 to 18, 78 to 80 and 140 and 142, the dielectric constant of the capacitors becomes equal to or less than 10,000. However, when the content of sum of the oxides of Mn, V and Cr is set to be 0.6 mol part in terms of Mn 2 O 3 , V 2 O 5 and Cr 2 O 3 , as in samples 12 to 15, 75 to 77 and 137 to 139, the desired characteristics can be successfully attained.

Accordingly, it is preferable that the total amount of oxides of Mn, V and Cr ranges from 0.03 to 0.6 mol part in terms of Mn 2 O 3 , V 2 O 5 and Cr 2 O 3 .

Further, it is to be noted that same effects can be obtained regardless of whether an oxide of one of the elements Mn, V and Cr is used alone or two or more thereof are used together as in samples 4 to 15, 66 to 77 and 128 to 139 as long as the total content thereof satisfies the above specified range.

Further, when the content of oxides of Mo and W is greater than 0.4 mol part in terms of MoO 3 and WO 3 as in the samples 25, 87 and 149, the tan δ thereof may be deteriorated over 10.0% and the capacitance variation ΔC/C 25 exceeds the range from −80% to +30% with the temperature varying from −55° C. to +125° C. However, when the total content of oxides is set to be 0.3 mol part as in samples 24, 86 and 148, the desired electrical characteristics can be successfully obtained.

Accordingly, it is preferable that the total content of the oxides of Mo and W ranges from 0 to 0.3 mol part in terms of MoO 3 and WO 3 .

Furthermore, same effects can be obtained regardless of whether the oxides of Mo and W are used separately as in samples 20 to 24 and 82 to 86 or used together as in samples 144 to 148.

When the ratio Ba/(Ti 1−x Zr x ) is 0.997 as in the samples 53, 115 and 177, a highly densified ceramic body may not be obtained by the sintering at 1200° C.; whereas when the ratio Ba/(Ti 1−x Zr x ) is 1.000 as in the samples 54, 116 and 178, the desired electrical characteristics can be successfully obtained.

Further, when the ratio Ba/(Ti 1−x Zr x ) is 1.015 as in the samples 57, 119 and 181, the tan δ thereof may be deteriorated over 10.0% or the desired electrical characteristics can not be obtained; whereas when the ratio Ba/(Ti 1−x Zr x ) is 1.010 as in the samples 56, 118 and 180, the desired electrical characteristics can be successfully obtained. Accordingly, the optimum range of the ratio Ba/(Ti 1−x Zr x ) ranges from about 1.000 to about 1.010.

Ca or Sr can be used instead of Ba for adjusting the ratio Ba/(Ti 1−x Zr x ). That is, as long as the ratio of the sum of Ba, Ca and Sr to (Ti 1−x Zr x ). i.e., (Ba+Ca)/(Ti 1−x Zr x ) ratio, (Ba+Sr)/(Ti 1−x Zr x ) ratio or (Ba+Ca+Sr)/(Ti 1−x Zr x ) satisfies the optimum range from 1.000 to 1.010, the desired characteristics can be obtained.

Still further, barium carbonate, barium acetate, barium nitrate, calcium acetate, strontium nitrate or the like can be used in controlling the ratios mentioned above.

Although the present invention has been described with reference to the multilayer ceramic capacitors in this specification, it will be apparent to those skilled in the art that the present invention is also applicable to a single layer ceramic capacitor.

When x is 0 in Ti 1−x Zr x as in the samples 58, 120 and 182, the dielectric constant ε s becomes equal to or less than 10,000, whereas when x is 0.26 as in the samples 61, 123 and 185, the desired electrical characteristics can be obtained. Accordingly, the optimum range of x in Ti 1−x Zr x ranges about 0.05 to 0.26.

The present invention can produce a multilayer ceramic capacitor capable of providing a desired operating life with a highly improved reliability, wherein the capacitor exhibits a relative permittivity ε s of 10,000 or greater, tan δ of 10.0% or less and a capacitance variation ΔC/C 25 ranging from −80% to +30% within the temperature range from −55° C. to +125° C. In accordance with the present invention, there is provided a multilayer ceramic capacitor capable of providing a desired operating life with a highly improved reliability when the dielectric ceramic composition includes one or more oxides selected from the group consisting of oxides of Mo and W, the contents of the oxides being included therein in amounts ranging about 0.025 to 0.3 mol part by assuming that the oxides of Mo and W are MoO 3 and WO 3 , respectively.

While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims

1. A dielectric ceramic composition comprising:100 mol part of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti1−xZrx)O3; 0.25 to 1.5 mol part of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re2O3; 0.1 to 0.4 mol part of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; and 0.03 to 0.6 mol part of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn2O3, V2O5 and Cr2O3, respectively, wherein a ratio of Ba/(Ti1−xZrx) ranges from about 1.000 to about 1.010 and x in Ti1−xZrx ranges from about 0.05 to about 0.26.

2. The dielectric ceramic composition of claim 1, wherein the dielectric ceramic composition further comprises one or more oxides selected from the group consisting of an oxide of Mo and an oxide of W, the contents of the oxides of Mo and W being calculated by assuming that the oxides of Mo and W are MoO3 and WO3, respectively and each of the contents of the oxides of Mo and W ranging about 0.025 to 0.3 mol part.

3. A ceramic capacitor comprising:one or more ceramic dielectric layers, each of the ceramic dielectric layers including a dielectric ceramic composition of claim 1; and two or more internal electrodes, a dielectric layer being disposed between adjacent two internal electrodes.

4. The ceramic capacitor of claim 3, wherein the dielectric ceramic composition further comprises one or more oxides selected from the group consisting of an oxide of Mo and an oxide of W, the contents of the oxides of Mo and W being calculated by assuming that the oxides of Mo and W are MoO3 and WO3, respectively and each of the contents of the oxides of Mo and W ranging about 0.025 to 0.3 mol part.