Dielectric ceramic composition

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a dielectric ceramic composition and, more particularly, to a high permittivity dielectric ceramic composition.
2. Description of the Prior Art
So far, dielectric ceramic compositions of a barium titanate system have widely been put into practical use as ceramics of a high permittivity dielectric. However, when these BaTiO.sub.3 dielectric ceramics are applied to capacitors, the dielectric loss increases with increasing frequencies and the capacitance is considerably affected by a direct current bias electric field. For example, when a high DC voltage of 5 KV/mm is applied to the capacitor, the capacitance thereof is reduced by 30 to 50%.
On the other hand, many investigations of SrTiO.sub.3 systems have been reported in various literatures such as, for example, in "DIELECTRIC PROPERTIES AND STRUCTURE OF PbTiO.sub.3 --SrTiO.sub.3 --Bi.sub.2/3 TiO.sub.3 SOLID SOLUTIONS" in ENGLISH TRANSLATION of the BULLETIN of the ACADEMY of SCIENCES OF THE USSR, PHYSICAL SERIES, Vol. 24. No. 11, p1383-1386, by V. Ya. Fritsberg, E. Zh. Freidenfel'd & Ya. Ya. Kruchan, Japanese patent publication No. 41880/1977, and Japanese patent publication No. 31280/1978. The first and second references disclose a dielectric ceramic composition of a PbTiO.sub.3 --SrTiO.sub.3 --Bi.sub.2 O.sub.3 --TiO.sub.2 system and the third reference discloses a dielectric ceramic composition of a SrTiO.sub.3 --PbTiO.sub.3 --Bi.sub.2 O.sub.3 --TiO.sub.2 --CaTiO.sub.3 system.
The ceramics of these systems possess a high dielectric constant of not less than 500 and is low in a change of capacitance with bias electric field as compared with those of the BaTiO.sub.3 system, so that they have been put into practical use.
However, these dielectric ceramics also have various problems awaiting a solution in their characteristics and in industrial mass production. For example, a temperature change rate of dielectric constant is large. In addition, since the ceramic compositions of these systems must be fired at a high temperature ranging from 1220.degree. to 1320.degree. C. to obtain optimum dielectric characteristics, it is difficult to avoid evaporation of easily evaporable PbO and Bi.sub.2 O.sub.3 during sintering without closely controlling the sintering atmosphere of PbO and Bi.sub.2 O.sub.3.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a dielectric ceramic composition which overcomes the aforesaid disadvantages.
Another object of the present invention is to provide a dielectric ceramic composition having a high dielectric constant of not less than 500, low DC voltage dependency of the dielectric constant, and small change of dielectric constant with temperature and low dielectric loss even at high frequencies.
Further object of the present invention is to provide a dielectric ceramic composition which can be sintered at a low temperature of not more than 1200.degree. C. without causing variations in stable and uniform dielectric characteristics.
According to the present invention these and other objects are achieved by providing a dielectric ceramic composition consisting essentially of a main component of a SrTiO.sub.3 --PbTiO.sub.3 --Bi.sub.2 O.sub.3 --TiO.sub.2 --CaTiO.sub.3 system and secondary components of manganese oxides, at least one oxide of rare earth elements selected from the group consisting of Nd, La, Ce, Pr and Sm, and one of complex perovskite compounds expressed by the following general formula:
A(Cu.sub.1/2 W.sub.1/2)O.sub.3 (1)
(where A is at least one element selected from the group consisting of Pb, Sr and Ca),
A(Cu.sub.1/3 Ta.sub.2/3)O.sub.3 (2)
(where A is at least one element selected from the group consisting of Pb, Sr and Ca), and
A(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 (3)
(where A is at least one element selected from the group consisting of Pb, Sr and Ca), said main component consisting essentially, by weight, of 19.5 to 42.8% of SrTiO.sub.3, 8.0 to 37.6% of PbTiO.sub.3, 4.2 to 33.9% of CaTiO.sub.3, 4.4 to 26.9% of Bi.sub.2 O.sub.3, 4.2 to 13.6% of TiO.sub.2 and 0.5 to 12% of SnO.sub.2, the contents of said secondary components per 100 parts by weight of said main component being 0.02 to 0.50 parts by weight for manganese oxide in terms of MnO.sub.2, 0.1 to 5.0 parts by weight for oxides of rare earth elements in terms of Re.sub.2 O.sub.3, and 0.1 to 5.0 parts by weight for said complex perovskite compound.
DETAILED DESCRIPTION OF THE INVENTION
According to the present invention, there is provided a dielectric ceramic composition consisting essentially of (a) a main component consisting essentially by weight, of 19.5 to 42.8% of SrTiO.sub.3, 8.0 to 37.6% of PbTiO.sub.3, 4.2 to 33.9% of CaTiO.sub.3, 4.4 to 26.9% of Bi.sub.2 O.sub.3, 4.2 to 13.6% of TiO.sub.2 and 0.5 to 12% of SnO.sub.2, and (b) secondary components composed of manganese oxides, at least one oxide of rare earth elements selected from the group consisting of Nd, La, Ce, Pr and Sm, and a complex perovskite compound expressed by the general formula: A(Cu.sub.1/2 W.sub.1/2)O.sub.3 (where A is at least one element selected from the group consisting of Pb, Sr and Ca), the content of the secondary components per 100 parts by weight of said main component being 0.02 to 0.50 parts by weight for manganese oxide in terms of MnO.sub.2, 0.1 to 5.0 parts by weight for oxides of rare earth elements in terms of Re.sub.2 O.sub.3, and 0.1 to 5.0 parts by weight for said complex perovskite compound.
There is also provided a dielectric ceramic composition consisting essentially of (a) a main component consisting essentially, by weight, of 19.5 to 42.8% of SrTiO.sub.3, 8.0 to 37.6% of PbTiO.sub.3, 4.2 to 33.9% of CaTiO.sub.3, 4.4 to 26.9% of Bi.sub.2 O.sub.3, 4.2 to 13.6% of TiO.sub.2 and 0.5 to 12% of SnO.sub.2, and (b) secondary components composed of manganese oxides, at least one oxide of rare earth elements selected from the group consisting of Nd, La, Ce, Pr and Sm, and at least one complex perovskite compound expressed by the general formula: A(Cu.sub.1/3 Ta.sub.2/3)O.sub.3 (where A is at least one element selected from the group consisting of Pb, Sr and Ca), the content of the secondary components per 100 parts by weight of said main component being 0.02 to 0.50 parts by weight for manganese oxide in terms of MnO.sub.2, 0.1 to 5.0 parts by weight for oxides of rare earth elements in terms of Re.sub.2 O.sub.3, and 0.1 to 5.0 parts by weight for said complex perovskite compound.
According to the present invention, there is further provided a dielectric ceramic composition consisting essentially of (a) a main component consisting essentially, by weight, of 19.5 to 42.8% of SrTiO.sub.3, 8.0 to 37.6% of PbTiO.sub.3, 4.2 to 33.9% of CaTiO.sub.3, 4.4 to 26.9% of Bi.sub.2 O.sub.3, 4.2 to 13.6% of TiO.sub.2 and 0.5 to 12% of SnO.sub.2, and (b) secondary components composed of manganese oxides, at least one oxide of rare earth elements selected from the group consisting of Nd, La, Ce, Pr and Sm, and at lest one complex perovskite compound expressed by the general formula: A(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 (where A is at least one element selected from the group consisting of Pb, Sr and Ca), the content of the secondary components per 100 parts by weight of said main component being 0.02 to 0.50 parts by weight for manganese oxide in terms of MnO.sub.2, 0.1 to 5.0 parts by weight for oxides of rare earth elements in terms of Re.sub.2 O.sub.3, and 0.1 to 5.0 parts by weight for said complex perovskite compound.
The above dielectric ceramic composition may be produced in the conventionally known manner. Raw materials for the dielectric ceramic composition may be used in the form of oxides, carbonates and other compounds which can be converted into oxides of the respective elements during sintering. Also, the raw materials may be used in the form of perovskite type compounds such as SrTiO.sub.3, PbTiO.sub.3, CaTiO.sub.3, Pb(Cu.sub.1/2 W.sub.1/2)O.sub.3, Sr(Cu.sub.1/2 W.sub.1/2)O.sub.3, Ca(Cu.sub.1/2 W.sub.1/2)O.sub.3, Pb(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Ca(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Pb(Cu.sub.1/3 Nb.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Nb.sub.b2/3)O.sub.3, Ca(Cu.sub.1/2 Nb.sub.b2/3)O.sub.3 and the like.
The contents of the respective components in the main component have been limited to those falling within the above respective ranges for the following reasons: If the content of SrTiO.sub.3 is less than 19.5% by weight, the the dielectric loss at 1 MHz exceeds 0.5%. If the content of SrTiO.sub.3 exceeds 42.8% by weight, the temperature change rate of dielectric constant becomes large. Thus, the content of SrTiO.sub.3 has been limited to those ranging from 19.5 to 42.8% by weight.
If the content of PbTiO.sub.3 is less than 8.0% by weight, the dielectric constant becomes small and less than 500. If the content of PbTiO.sub.3 exceeds 37.6% by weight, the dielectric loss (tan .delta.) at 1 MHz exceeds 0.5%, the bias characteristics of the products becomes worse and the temperature change rate of dielectric constant becomes large. For these reasons, the content of PbTiO.sub.3 has been limited to those ranging from 8.0 to 37.6% by weight.
If the content of CaTiO.sub.3 is less than 4.2% by weight, the dielectric loss (tan .delta.) at 1 MHz exceeds 0.5% and the bias characteristics of the products becomes worse. If the content of CaTiO.sub.3 exceeds 33.9% by weight, the dielectric constant becomes low and less than 500. For these reasons, the content of CaTiO.sub.3 has been limited to those ranging from 4.2 to 33.9% by weight.
If the content of Bi.sub.2 O.sub.3 is less than 4.4% by weight, the temperature change rate of dielectric constant becomes large. If the content of Bi.sub.2 O.sub.3 exceeds 26.9% by weight, the dielectric loss (tan .delta.) at 1 MHz becomes 0.5%. Thus, the content of Bi.sub.2 O.sub.3 has been limited to those ranging from 4.4 to 26.9% by weight.
If the content of TiO.sub.2 is less than 4.2% by weight, the sintering temperature becomes higher than 1200.degree. C. If the content of TiO.sub.2 exceeds 13.6% by weight, the temperature change rate of dielectric constant becomes large. For these reasons, the content of TiO.sub.2 has been limited to those ranging from 4.2 to 13.6% by weight.
If the content of SnO.sub.2 is less than 0.5% by weight, the dielectric loss (tan .delta.) at 1 MHz exceeds 0.5% and the specific resistance of the product at a high temperature becomes low and less than 10.sup.13 .OMEGA.-cm. If the content of SnO.sub.2 exceeds 12.0% by weight, the dielectric constant becomes less than 500. For these reasons, the content of SnO.sub.2 has been limited to those ranging from 0.5 to 12.0% by weight.
The reasons why the contents of the secondary components have been limited to those falling within the above respective ranges are as follows: If the content of MnO.sub.2 is less than 0.02 parts by weight per 100 parts by weight of the main component, the specific resistance at high temperatures becomes low and less than 10.sup.13 .OMEGA.-cm, and the sintering temperature becomes higher than 1200.degree. C. If the content of MnO.sub.2 exceeds 0.5 parts by weight, the dielectric loss (tan .delta.) at 1 MHz becomes large and more than 0.5%. Thus, the content of manganese oxides has been limited to those ranging of 0.02 to 0.5 parts by weight per 100 parts by weight of the main component in terms of MnO.sub.2.
If the content of oxides of rare earth elements (Re) per 100 parts by weight of the main component is less than 0.1 parts by weight in terms of Re.sub.2 O.sub.3, the dielectric loss (tan .delta.) at 1 MHz becomes large and more than 0.5%. If the content of Re.sub.2 O.sub.3 exceeds 5.0 parts by weight, the dielectric constant becomes low and less than 500. Thus, the content of oxides of rare earth elements has been limited to those ranging from 0.1 to 5.0 parts by weight per 100 parts by weight of the main component in terms of Re.sub.2 O.sub.3.
If the content of the complex compounds of the formula: A(Cu.sub.1/2 W.sub.1/2)O.sub.3, or A(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, or A(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 is less than 0.1 parts by weight per 100 parts by weight of the main component, the dielectric loss (tan .delta.) at 1 MHz becomes large and more than 0.5 and the sintering temperature becomes higher than 1200.degree. C. If it exceeds 5.0 part by weight, the specific resistance at high temperatures becomes less than 10.sup.13 .OMEGA.-cm. Thus, the content of the complex compound has been limited to those ranging from 0.1 to 5.0 parts by weight per 100 parts by weight of the main component.
The dielectric ceramic composition according to the present invention has a dielectric constant of more than 500, low DC voltage dependency of the dielectric constant, high specific resistance at high temperatures, a small temperature change rate of capacitance and low dielectric loss even at high frequencies. Since the composition can be sintered at a low temperature, thus making it possible to mass produce dielectric ceramic products such as capacitors with uniform dielectric characteristics.
The present invention will be further apparent from the following description with reference to examples thereof.

EXAMPLE 1
Using industrial grade, SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, SnO.sub.2, MnO.sub.2, CuO, WO.sub.3, Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3 as raw materials, there were prepared specimens having a composition shown in Table 1 in the following manner: Firstly, the raw materials SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, CuO and WO.sub.3 were weighed and milled in a ball mill to prepare SrTiO.sub.3, PbTiO.sub.3, CaTiO.sub.3, Pb(Cu.sub.1/2 W.sub.1/2)O.sub.3, Sr(Cu.sub.1/2 W.sub.1/2)O.sub.3, Ca(Cu.sub.1/2 W.sub.1/2)O.sub.3. Each of the resultant mixtures for SrTiO.sub.3 and CaTiO.sub.3, was calcined at 1150.degree. C. for 2 hours, crushed and milled to prepare calcined powders. The mixture for PbTiO.sub.3 was calcined at 950.degree. C., while mixtures for Pb(Cu.sub.1/2 W.sub.1/2)O.sub.3, Sr(Cu.sub.1/2 W.sub.1/2)O.sub.3 and Ca(Cu.sub.1/2 W.sub.1/2)O.sub.3 were at 850.degree. C.
The thus prepared, calcined powders were weighed together with powders of secondary additives, MnO.sub.2, Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3 to prepare a mixture for a dielectric ceramic composition having a composition shown in Table 1, and then ball milled by the wet process for 16 hours together with a suitable amount of binder, using a polyethylene not with alumina balls. Each mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1070.degree. to 1250.degree. C. to prepare ceramic disks.
A pair of silver electrodes were provided on each resultant ceramic disk by applying silver paste on its opposite sides and then baking it at 800.degree. C.
Test specimen No. 30 was prepared in the following manner: Raw materials, SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2 SnO.sub.2, MnO.sub.2, CuO and WO.sub.3 and Nd.sub.2 O.sub.3 were weighed and milled by the wet process with a ball mill to prepare a mixture for a composition shown in Table 1, calcined at 950.degree. C. for 2 hours, crushed and then ball milled by the wet process together with 3 parts by weight of polyvinyl alcohol binder. The resultant mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1100.degree. to 1230.degree. C. to prepare ceramic disks. A pair of silver electrodes were provided on each resultant ceramic disk by applying silver paste on its opposite sides and then then baking it at 800.degree. C.
The thus prepared test specimens were subjected to measurements of its dielectric constant (.epsilon.), dielectric loss (tan .delta.), specific resistance (.rho.), bias characteristics (.DELTA.C.sub.v), and a change rate of dielectric constant with temperature (.DELTA.C/C.sub.20).
The dielectric constant (.epsilon.) was measured at a frequency of 1 KHz while the dielectric loss was measured at frequencies of 1 KHz and 1 MHz. The specific resistance was measured 2 minutes later after applying a DC voltage of 500 V/mm at 25.degree. C. and 125.degree. C.
The bias characteristic, i.e., change rate of capacitance with voltage was determined by applying a DC bias voltage of 5 KV/mm. The change rate of capacitance with temperature was determined by values measured at -25.degree. C., +20.degree. C. and +85.degree. C. and given by the equation: ##EQU1## where C.sub.t is the capacitance measured at -25.degree. C. or +85.degree. C., and C.sub.20 is that at 20.degree. C.
The results are shown in Table 2 together with the optimum sintering temperature (Ts). In Tables 1 and 2, the specimens with an asterisk (*) are those having a composition beyond the scope of the present invention.
TABLE 1__________________________________________________________________________Main Component (wt %) Secondary Components (parts by weight)No. SrTiO.sub.3 PbTiO.sub.3 CaTiO.sub.3 Bi.sub.2 O.sub.3 TiO.sub.2 SnO.sub.2 MnO.sub.2 Re.sub.2 O.sub.3 A(Cu.sub.1/2 W.sub.1/2)O.sub.3__________________________________________________________________________1 19.5 37.6 16.9 16.3 7.9 1.8 0.15 Re.dbd.Nd 1.0 A.dbd.Sr 1.02 26.0 19.1 15.0 25.9 12.7 1.3 0.02 Re.dbd.La 2.0 A.dbd.Pb 0.13 25.7 18.9 14.8 25.7 11.2 3.7 0.50 Re.dbd.Ce 1.0 A.dbd.Pb 4.04 24.7 18.2 14.2 24.6 6.3 12.0 0.10 Re.dbd.Nd 2.0 A.dbd.Ca 2.05 33.8 16.7 31.0 12.2 5.1 1.2 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 3.06 42.8 14.2 4.2 25.6 10.1 3.1 0.10 Re.dbd.Pr 1.0 A.dbd.Pb 5.07 37.4 8.0 13.8 26.9 11.4 2.5 0.10 Re.dbd.Sm 1.0 A.dbd.Pb 2.08 25.0 33.9 21.1 4.4 7.9 7.7 0.15 Re.dbd.Nd 0.1 A.dbd.Ca 3.09 34.1 18.8 8.4 25.5 12.6 0.6 0.10 Re.dbd.Nd 1.0 A.dbd.Sr 2.010 22.5 18.6 30.5 18.8 9.1 0.5 0.10 Re.dbd.Nd 5.0 A.dbd.Pb 3.011 29.7 14.7 15.4 26.1 13.6 0.5 0.10 Re.dbd.Ce 2.0 A.dbd.Pb 2.012* 17.9 36.1 6.0 25.3 9.2 5.5 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 3.013* 43.2 10.0 24.8 12.4 8.9 0.7 0.10 Re.dbd.Ce 2.0 A.dbd.Pb 1.014* 36.7 6.3 18.7 25.3 12.3 0.7 0.10 Re.dbd.Nd 2.0 A.dbd.Ca 2.015* 28.5 41.9 7.0 15.9 7.4 1.5 0.15 Re.dbd.Nd 1.0 A.dbd.Sr 1.016* 39.1 13.0 3.5 25.6 12.0 6.8 0.15 Re.dbd.Sm 2.0 A.dbd.Pb 2.017* 24.6 18.1 14.1 24.5 5.6 13.1 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 3.018* 31.5 10.6 18.9 25.8 11.0 2.2 0.10 0 A.dbd.Pb 2.019* 26.9 22.2 36.5 9.5 4.2 0.7 0.15 Re.dbd.Nd 2.0 A.dbd.Pb 2.020* 25.3 35.6 18.2 4.2 10.3 6.4 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 1.021* 20.3 16.8 27.5 27.9 4.4 3.1 0.15 Re.dbd.Nd 1.0 A.dbd.Pb 2.022* 28.2 12.5 18.6 26.0 3.2 11.5 0.10 Re.dbd.La 2.0 A.dbd.Pb 2.023* 40.3 14.3 6.4 22.5 15.2 1.3 0.10 Re.dbd.La 2.0 A.dbd.Pb 1.024* 37.4 8.0 13.8 26.9 11.4 2.5 0 Re.dbd. Nd 1.0 A.dbd.Pb 2.025* 23.4 33.1 17.3 16.8 7.8 1.6 0.80 Re.dbd.Nd 1.0 A.dbd.Pb 0.526* 25.0 21.1 33.9 8.9 4.1 0.5 0.10 Re.dbd.Nd 8.0 A.dbd.Pb 2.027* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 028* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 A.dbd.Pb 8.029* 31.5 10.6 18.9 25.8 13.2 0 0.10 Re.dbd.Nd 3.0 A.dbd.Pb 3.030 33.8 16.7 31.0 12.2 5.1 1.2 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 3.0__________________________________________________________________________
TABLE 2__________________________________________________________________________ .DELTA.C/C .rho.Ts .epsilon. tan .delta. (%) (.OMEGA.-cm) .DELTA.C.sub.vNo. (.degree.C.) (1 KHz) 1 KHz 1 MHz -25.degree. C. +85.degree. C. at 25.degree. C. at 85.degree. C. (%)__________________________________________________________________________1 1120 1510 0.22 0.41 3.5 -6.4 1.2 .times. 10.sup.14 2.2 .times. 10.sup.13 +9.52 1140 1050 0.14 0.30 2.9 -2.0 1.8 .times. 10.sup.14 3.0 .times. 10.sup.13 +12.03 1120 790 0.10 0.25 4.2 -4.8 9.5 .times. 10.sup.13 6.1 .times. 10.sup.13 +10.14 1180 510 0.11 0.22 4.1 -6.5 9.0 .times. 10.sup.13 7.2 .times. 10.sup.13 +6.75 1070 1450 0.12 0.19 5.5 -7.0 1.1 .times. 10.sup.14 1.2 .times. 10.sup.13 +7.26 1120 1050 0.13 0.29 6.2 -7.2 8.7 .times. 10.sup.13 6.0 .times. 10.sup.13 +1.07 1150 530 0.05 0.07 6.4 -7.2 1.0 .times. 10.sup. 14 1.1 .times. 10.sup.13 +3.58 1120 1020 0.18 0.32 4.9 -6.1 1.2 .times. 10.sup.14 1.2 .times. 10.sup.13 +1.49 1110 1070 0.24 0.48 3.2 -5.9 9.3 .times. 10.sup.13 1.1 .times. 10.sup.13 +3.910 1100 570 0.08 0.10 4.3 -6.3 1.1 .times. 10.sup.14 1.1 .times. 10.sup.13 +3.511 1120 680 0.20 0.30 1.9 -2.5 1.2 .times. 10.sup.14 1.0 .times. 10.sup.13 +4.112* 1120 1250 0.36 1.80 5.0 -7.0 9.7 .times. 10.sup.13 3.1 .times. 10.sup.13 +0.513* 1150 620 0.09 0.10 11.3 -13.7 1.2 .times. 10.sup.14 1.3 .times. 10.sup.13 +9.014* 1090 410 0.15 0.25 3.5 -4.2 1.0 .times. 10.sup.14 3.2 .times. 10.sup.13 +4.115* 1130 2130 0.23 2.30 13.1 -17.3 9.9 .times. 10.sup.13 1.1 .times. 10.sup.13 -4.0__________________________________________________________________________ .DELTA.C/C .rho.Ts .epsilon. tan .delta. (%) (.OMEGA.-cm) .DELTA.C.sub.vNo. (.degree.C.) 1 KHz 1 KHz 1 MHz -25.degree. C. +85.degree. C. 25.degree. C. 125.degree. C. (%)__________________________________________________________________________16* 1120 1230 0.20 1.10 5.4 -7.1 1.3 .times. 10.sup.14 2.1 .times. 10.sup.13 -8.217* 1170 400 0.30 1.30 6.9 -9.0 8.5 .times. 10.sup.13 7.6 .times. 10.sup.13 +0.918* 1150 920 0.24 1.40 1.5 -2.3 1.0 .times. 10.sup.14 1.3 .times. 10.sup.13 +3.919* 1120 440 0.14 0.09 6.1 -7.2 1.2 .times. 10.sup.14 3.4 .times. 10.sup.13 +5.120* 1100 1350 0.15 0.30 8.9 -13.0 1.1 .times. 10.sup.14 2.9 .times. 10.sup.13 +2.121* 1140 540 0.35 0.70 6.5 -8.3 1.2 .times. 10.sup.14 2.0 .times. 10.sup.13 +3.022* 1210 890 0.20 0.41 2.2 -5.5 1.3 .times. 10.sup.14 2.3 .times. 10.sup.13 +2.123* 1130 1010 0.18 0.32 4.7 -11.0 1.2 .times. 10.sup.14 1.2 .times. 10.sup.13 +1.424* 1250 650 0.13 0.19 3.9 -4.2 9.5 .times. 10.sup.13 9.7 .times. 10.sup.11 +2.525* 1120 1190 0.75 0.92 3.5 -6.7 1.3 .times. 10.sup.14 1.2 .times. 10.sup.13 +9.726* 1110 470 0.03 0.08 5.5 -7.1 1.2 .times. 10.sup.14 2.0 .times. 10.sup.13 +3.827* 1200 1190 0.75 1.90 5.0 -9.5 9.5 .times. 10.sup.13 2.5 .times. 10.sup.13 +4.028* 1090 920 0.18 0.40 2.5 -3.0 8.5 .times. 10.sup.13 3.7 .times. 10.sup.12 +3.529* 1160 970 0.17 0.40 2.0 -2.4 9.0 .times. 10.sup.13 9.1 .times. 10.sup.11 +1.030 1070 1420 0.11 0.15 5.6 -7.2 1.2 .times. 10.sup.14 1.3 .times. 10.sup.13 +7.5__________________________________________________________________________
From the data shown in Table 2, it can be seen that the dielectric ceramic composition according to the present invention has a high dielectric constant of more than 500, a low dielectric loss (tan .delta.) of not more than 0.5% even at 1 MHz, and a high specific resistance of not less than 10.sup.13 .OMEGA.-cm. In addition, the dielectric constant is scarcely decreased even if a direct current voltage of 5 KV/mm is applied to the products. Further, the temperature change rate of capacitance is considerably small and -7.2% at the maximum at +85.degree. C. The composition of the present invention has a sintering temperature ranging from 1070 to 1180 which is lower by about 100.degree. to 200.degree. C. as compared with the compositions of the prior art.
EXAMPLE 2
As raw materials, there were used powders of industrial grade SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, SnO.sub.2, MnO.sub.2, CuO, Ta.sub.2 O.sub.5, Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3. There were prepared mixtures for preparation of SrTiO.sub.3, PbTiO.sub.3, CaTiO.sub.3, Pb(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, and Ca(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, respectively. The resultant mixtures for SrTiO.sub.3 and CaTiO.sub.3 were calcined at 1150.degree. C. for 2 hours, crushed and milled to prepare calcined powders. The mixture for PbTiO.sub.3 was calcined at 950.degree. C., and other mixtures for Pb(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Ta.sub.2/3)O.sub.3, Ca(Cu.sub.1/3 Ta.sub.2/3)O.sub.3 were at 850.degree. C., respectively.
The thus prepared compound powders were weighed together with powders of MnO.sub.2 and oxides of rare earth elements (Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3) to prepare a mixture for a dielectric ceramic composition having compositional proportions shown in Table 3, and then ball milled in polyethylene pot with alumina balls by the wet process for 16 hours together with a suitable amount of binder. The mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1070.degree. to 1250.degree. C. to prepare ceramic disks.
A pair of silver electrodes were provided on opposite surfaces of the resultant ceramic disk by applying silver paste on its opposite sides and then then baking it at 800.degree. C.
Test specimen No. 60 was prepared in the following manner: Raw materials, SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, SnO.sub.2, MnO.sub.2, CuO and Ta.sub.2 O.sub.5 and Nd.sub.2 O.sub.3 were weighed and milled by the wet process with a ball mill to prepare a mixture for a composition shown in Table 3, calcined at 950.degree. C. for 2 hours, crushed and then ball milled by the wet process together with 3 parts by weight of polyvinyl alcohol binder. The resultant mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1100.degree. to 1230.degree. C. to prepare ceramic disks. A pair of silver electrodes were provided on each resultant ceramic disk by applying silver paste on its opposite sides and then then baking it at 800.degree. C.
The thus prepared test specimens were subjected to measurements of dielectric properties in the same manner as in Example 1. Results are shown in Table 4 together with the optimum sintering temperature (Ts).
TABLE 3__________________________________________________________________________Main Component (wt %) Secondary Components (parts by weight)No. SrTiO.sub.3 PbTiO.sub.3 CaTiO.sub.3 Bi.sub.2 O.sub.3 TiO.sub.2 SnO.sub.2 MnO.sub.2 Re.sub.2 O.sub.3 A(Cu.sub.1/3 Ta.sub.2/3)O.sub.3__________________________________________________________________________31 19.5 37.6 16.9 16.3 7.9 1.8 0.15 Re.dbd.Nd 1.0 A.dbd.Pb 1.032 26.0 19.1 15.0 25.9 12.7 1.3 0.02 Re.dbd.La 2.0 A.dbd.Sr 0.133 25.7 18.9 14.8 25.7 11.2 3.7 0.50 Re.dbd.Ce 1.0 A.dbd.Pb 2.034 24.7 18.2 14.2 24.6 6.3 12.0 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 5.035 33.8 16.7 31.0 12.2 4.2 2.1 0.10 Re.dbd.Nd 0.5 A.dbd.Sr 4.036 42.8 14.2 4.2 25.6 10.1 3.1 0.10 Re.dbd.Pr 1.0 A.dbd.Pb 2.037 37.4 8.0 13.8 26.9 11.4 2.5 0.10 Re.dbd.Sm 1.0 A.dbd.Sr 2.038 25.0 21.1 33.9 4.4 7.9 7.7 0.15 Re.dbd.Nd 0.1 A.dbd.Ca 3.039 34.1 18.8 8.4 25.5 12.6 0.6 0.10 Re.dbd.Nd 1.0 A.dbd.Pb 2.040 22.5 18.6 30.5 18.8 9.1 0.5 0.10 Re.dbd.Nd 5.0 A.dbd.Pb 1.041 29.7 14.7 15.4 26.1 13.6 0.5 0.10 Re.dbd.Ce 2.0 A.dbd.Ca 1.042* 17.9 36.1 6.0 25.3 9.2 5.5 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 2.043* 43.2 10.0 24.8 12.4 8.9 0.7 0.10 Re.dbd.Ce 2.0 A.dbd.Pb 1.044* 36.7 6.3 18.7 25.3 12.3 0.7 0.10 Re.dbd.Nd 2.0 A.dbd.Ca 3.045* 28.0 40.9 6.8 15.6 7.2 1.5 0.15 Re.dbd.Nd 1.0 A.dbd.Sr 2.046* 39.1 13.0 3.5 25.6 12.0 6.8 0.15 Re.dbd.Sm 2.0 A.dbd.Pb 1.047* 24.6 18.1 14.1 24.5 5.6 13.1 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 2.048* 31.5 10.6 18.9 25.8 11.0 2.2 0.10 0 A.dbd.Pb 2.049* 26.9 22.2 36.5 9.5 4.2 0.7 0.15 Re.dbd.Nd 2.0 A.dbd.Pb 3.050* 25.3 35.6 18.2 4.2 10.3 6.4 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 1.051* 20.3 16.8 27.5 27.9 4.4 3.1 0.15 Re.dbd.Nd 1.0 A.dbd.Pb 2.052* 28.2 12.5 18.6 26.0 3.2 11.5 0.10 Re.dbd.La 2.0 A.dbd.Pb 2.053* 40.3 14.3 6.4 22.5 15.2 1.3 0.10 Re.dbd.La 2.0 A.dbd.Pb 3.054* 37.4 8.0 13.8 26.9 11.4 2.5 0 Re.dbd.Nd 1.0 A.dbd.Sr 2.055* 23.4 33.1 17.3 16.8 7.8 1.6 0.80 Re.dbd.Nd 1.0 A.dbd.Pb 2.056* 25.0 21.1 33.9 12.6 5.9 1.5 0.10 Re.dbd.Nd 8.0 A.dbd.Pb 3.057* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 058* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 A.dbd.Pb 8.059* 31.5 10.6 18.9 25.8 13.2 0 0.10 Re.dbd.Nd 3.0 A.dbd.Pb 2.060 33.8 16.7 31.0 12.2 4.2 2.1 0.10 Re.dbd.Nd 0.5 A.dbd.Sr 4.0__________________________________________________________________________
TABLE 4__________________________________________________________________________Ts .epsilon. tan .delta. .DELTA.C/C.sub.20 .rho.(.OMEGA.-cm) .DELTA.C.sub.vNo. (.degree.C.) (1 KHz) 1 KHz 1 MHz -25.degree. C. +85.degree. C. at 25.degree. C. at 85.degree. C. (%)__________________________________________________________________________31 1150 1470 0.20 0.38 3.1 -5.5 1.1 .times. 10.sup.14 2.9 .times. 10.sup.13 +10.132 1160 1050 0.15 0.27 2.4 -2.2 1.9 .times. 10.sup.14 3.2 .times. 10.sup.13 +12.933 1120 750 0.09 0.20 4.0 -4.6 1.0 .times. 10.sup.14 6.8 .times. 10.sup.13 +10.534 1100 500 0.10 0.15 4.1 -6.2 9.7 .times. 10.sup.14 7.2 .times. 10.sup.13 +6.535 1120 1330 0.10 0.13 4.5 -6.6 1.2 .times. 10.sup.14 1.0 .times. 10.sup.13 +7.036 1130 1010 0.12 0.25 6.2 -7.2 9.3 .times. 10.sup.14 5.7 .times. 10.sup.13 +1.337 1150 510 0.05 0.07 6.1 -7.0 1.2 .times. 10.sup.14 1.0 .times. 10.sup.13 +3.938 1130 530 0.04 0.08 5.4 -7.2 1.2 .times. 10.sup.14 1.1 .times. 10.sup.13 +2.039 1110 1060 0.23 0.45 3.3 -6.0 9.5 .times. 10.sup.14 1.3 .times. 10.sup.13 +4.440 1140 530 0.07 0.09 6.4 -7.2 1.3 .times. 10.sup.14 1.1 .times. 10.sup.13 +3.741 1140 620 0.16 0.29 1.7 -2.3 1.3 .times. 10.sup.14 1.1 .times. 10.sup.13 +4.042* 1130 1240 0.35 1.70 4.8 -6.7 9.7 .times. 10.sup.14 3.2 .times. 10.sup.13 +1.043* 1150 610 0.08 0.10 10.7 -12.8 1.3 .times. 10.sup.14 1.1 .times. 10.sup.13 +8.944* 1070 390 0.10 0.19 3.0 -4.0 1.2 .times. 10.sup.14 3.3 .times. 10.sup.13 +4.245* 1130 2020 0.23 2.10 12.9 -17.0 1.1 .times. 10.sup.14 1.0 .times. 10.sup.13 -4.8__________________________________________________________________________Ts .epsilon. tan .delta. .DELTA.C/C (%) .rho.(.OMEGA.-cm) .DELTA.C.sub.vNo. (.degree.C.) (1 KHz) 1 KHz 1 MHz -25.degree. C. +85.degree. C. at 25.degree. C. at 85.degree. C. (%)__________________________________________________________________________46* 1130 1200 0.18 1.00 5.2 -6.9 1.2 .times. 10.sup.14 2.2 .times. 10.sup.13 -8.847* 1180 380 0.27 1.00 6.8 -8.5 8.9 .times. 10.sup.13 7.5 .times. 10.sup.13 +1.048* 1160 900 0.22 1.20 1.1 -2.2 1.2 .times. 10.sup.14 3.5 .times. 10.sup.13 +4.149* 1120 400 0.12 0.08 6.0 -6.9 1.1 .times. 10.sup.14 2.1 .times. 10.sup.13 +5.250* 1120 1320 0.14 0.28 8.5 -12.8 1.3 .times. 10.sup.14 2.5 .times. 10.sup.13 +2.151* 1150 510 0.31 0.97 6.3 -7.2 1.2 .times. 10.sup.14 2.9 .times. 10.sup.13 +2.752* 1230 870 0.17 0.38 1.9 -5.1 1.3 .times. 10.sup.14 2.3 .times. 10.sup.13 +2.153* 1120 950 0.15 0.29 5.2 -10.9 1.1 .times. 10.sup.14 1.2 .times. 10.sup.13 +1.054* 1250 620 0.14 0.18 3.8 -4.1 9.8 .times. 10.sup.13 9.9 .times. 10.sup.11 +2.255* 1100 1120 0.68 0.89 3.2 -6.2 1.4 .times. 10.sup.14 1.1 .times. 10.sup.13 +7.356* 1110 450 0.03 0.07 5.2 -7.0 1.2 .times. 10.sup.14 1.7 .times. 10.sup.13 +3.857* 1200 1190 0.75 1.90 5.0 -9.5 9.5 .times. 10.sup.13 2.5 .times. 10.sup.13 +4.058* 1090 900 0.13 0.37 2.3 -2.8 8.6 .times. 10.sup.13 5.3 .times. 10.sup.12 +3.359* 1180 960 0.16 0.38 1.8 -2.3 9.2 .times. 10.sup.13 7.1 .times. 10.sup.11 +1.060 1100 1320 0.10 0.12 4.7 -6.8 1.3 .times. 10.sup.14 1.1 .times. 10.sup.13 +7.0__________________________________________________________________________
From the data shown in Table 4, it can be seen that the present invention makes it possible to produce a dielectric ceramic composition having a high dielectric constant of not less than 500, a low dielectric loss (tan .delta.) of not more than 0.5% at 1 MHz, and high specific resistance of not less than 10.sup.13 .OMEGA.-cm at room temperature and high temperature. In addition, the dielectric constant is scarcely decreased even if a direct current voltage of 5 KV/mm is applied to the products. Further, the temperature change rate of capacitance is considerably small and -7.2% at the maximum of +85.degree. C. The composition of the present invention has a sintering temperature ranging from 1070.degree. to 1180.degree. which is lower by about 100.degree. to 200.degree. C. as compared with the compositions of the prior art.
EXAMPLE 3
As raw materials, there were used powders of industrial grade SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3,Bi.sub.2 O.sub.3, TiO.sub.2, SnO.sub.2, MnO.sub.2, CuO, Nb.sub.2 O.sub.5, Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3. Using the raw materials for the main component, there were prepared calcined powders of SrTiO.sub.3, PbTiO.sub.3, CaTiO.sub.3, Pb(CU.sub.1/3 Nb.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 and Ca(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 in the same manner as in Example 1. SrTiO.sub.3 and CaTiO.sub.3 were calcined at 1150.degree. C., PbTiO.sub.3 being at 950.degree. C., and Pb(Cu.sub.1/3 Nb.sub.2/3)O.sub.3, Sr(Cu.sub.1/3 Nb.sub.2/3)O.sub.3, Ca(Cu.sub.1/3 Nb.sub.2/3)O.sub.3 being at 850.degree. C., respectively.
The thus prepared calcined powders were weighed together with powders of MnO.sub.2 and oxides of rare earth elements (Nd.sub.2 O.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Pr.sub.2 O.sub.3 and Sm.sub.2 O.sub.3) to prepare a mixture of a dielectric ceramic composition having compositional proportions shown in Table 5, and then ball milled in a polyethylene pot with alumina balls by the wet process for 16 hours together with a suitable amount of binder. The mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1070.degree. to 1250.degree. C. to prepare ceramic disks.
A pair of silver electrodes were provided on opposite surfaces of the resultant ceramic disk by applying silver paste on its opposite sides and then then baking it at 800.degree. C.
Test specimen No. 90 was prepared in the following manner: Raw materials of industrial grade SrCO.sub.3, Pb.sub.3 O.sub.4, CaCO.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, SnO.sub.2, MnO.sub.2, CuO, Nb.sub.2 O.sub.5 and Nd.sub.2 O.sub.3 were weighed and milled by the wet process with a ball mill to prepare a mixture, of which a product has a composition shown in Table 5. The mixture was calcined at 950.degree. C. for 2 hours, crushed and then ball milled by the wet process together with 3 parts by weight of polyvinyl alcohol binder. The resultant mixture was dried, granulated and then compacted into disks with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of 2000 Kg/cm.sup.2. The disks were fired at a temperature ranging from 1100.degree. to 1230.degree. C. to prepare ceramic disks. A pair of silver electrodes were provided on each resultant ceramic disk by applying silver paste on its opposite sides and then then baking it at 800.degree. C.
The thus prepared test specimens were subjected to measurements of dielectric properties in the same manner as in Example 1. Results are shown in Table 6 together with the optimum sintering temperature (Ts).
TABLE 5__________________________________________________________________________Main Component (wt %) Secondary Components (parts by weight)No. SrTiO.sub.3 PbTiO.sub.3 CaTiO.sub.3 Bi.sub.2 O.sub.3 TiO.sub.2 SnO.sub.2 MnO.sub.2 Re.sub.2 O.sub.3 A(Cu.sub.1/3 Nb.sub.2/3)O.sub.3__________________________________________________________________________61 19.5 37.6 16.9 16.3 7.9 1.8 0.15 Re.dbd.Nd 1.0 A.dbd.Ca 2.062 26.0 19.1 15.0 25.9 12.7 1.3 0.02 Re.dbd.La 2.0 A.dbd.Pb 0.163 25.7 18.9 14.8 25.7 11.2 3.7 0.50 Re.dbd.Ce 1.0 A.dbd.Sr 2.064 24.7 18.2 14.2 24.6 6.3 12.0 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 2.065 33.8 16.7 31.0 12.2 4.2 2.1 0.10 Re.dbd.Nd 0.5 A.dbd.Sr 3.066 42.8 14.2 4.2 25.6 10.1 3.1 0.10 Re.dbd.Pr 1.0 A.dbd.Pb 5.067 37.4 8.0 13.8 26.9 11.4 2.5 0.10 Re.dbd.Sm 1.0 A.dbd.Pb 1.068 25.0 21.1 33.9 4.4 7.9 7.7 0.15 Re.dbd.Nd 0.1 A.dbd.Ca 2.069 34.1 18.8 8.4 25.5 12.6 0.6 0.10 Re.dbd.Nd 1.0 A.dbd.Pb 3.070 22.5 18.6 30.5 18.8 9.1 0.5 0.10 Re.dbd.Nd 5.0 A.dbd.Pb 2.071 29.7 14.7 15.4 26.1 13.6 0.5 0.10 Re.dbd.Ce 2.0 A.dbd.Pb 4.072* 17.9 36.1 6.0 25.3 9.2 5.5 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 2.073* 43.2 10.0 24.8 12.4 8.9 0.7 0.10 Re.dbd.Ce 2.0 A.dbd.Pb 3.074* 36.7 6.3 18.7 25.3 12.3 0.7 0.10 Re.dbd.Nd 2.0 A.dbd.Ca 2.075* 28.0 40.9 6.8 15.6 7.2 1.5 0.15 Re.dbd.Nd 1.0 A.dbd.Sr 1.076* 39.1 13.0 3.5 25.6 12.0 6.8 0.15 Re.dbd.Sm 2.0 A.dbd.Pb 3.077* 24.6 18.1 14.1 24.5 5.6 13.1 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 3.078* 31.5 10.6 18.9 25.8 11.0 2.2 0.10 0 A.dbd.Pb 2.079* 26.9 22.2 36.5 9.5 4.2 0.7 0.15 Re.dbd.Nd 2.0 A.dbd.Pb 2.080* 25.3 35.6 18.2 4.2 10.3 6.4 0.10 Re.dbd.Nd 2.0 A.dbd.Pb 2.081* 20.3 16.8 27.5 27.9 4.4 3.1 0.15 Re.dbd.Nd 1.0 A.dbd.Pb 1.082* 28.2 12.5 18.6 26.0 3.2 11.5 0.10 Re.dbd.La 2.0 A.dbd.Pb 2.083* 40.3 14.3 6.4 22.5 15.2 1.3 0.10 Re.dbd.La 2.0 A.dbd.Pb 0.584* 37.4 8.0 13.8 26.9 11.4 2.5 0 Re.dbd.Nd 1.0 A.dbd.Pb 2.085* 23.4 33.1 17.3 16.8 7.8 1.6 0.80 Re.dbd.Nd 1.0 A.dbd.Sr 2.086* 25.0 21.1 33.9 12.6 5.9 1.5 0.10 Re.dbd.Nd 8.0 A.dbd.Sr 3.087* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 088* 34.1 18.8 8.4 25.5 12.6 0.6 0.50 Re.dbd.Nd 1.0 A.dbd.Pb 8.089* 31.5 10.6 18.9 25.8 13.2 0 0.10 Re.dbd.Nd 3.0 A.dbd.Pb 2.090 33.8 16.7 31.0 12.2 4.2 2.1 0.10 Re.dbd.Nd 0.5 A.dbd.Pb 3.0__________________________________________________________________________
TABLE 6__________________________________________________________________________ tan .delta. .DELTA.C/C.sub.20Ts .epsilon. (%) (%) .rho.(.OMEGA.-cm) .DELTA.C.sub.vNo. (.degree.C.) (1 KHz) 1 KHz 1 MHz -25.degree. C. +85.degree. C. at 25.degree. C. at 85.degree. C. (%)__________________________________________________________________________61 1130 1490 0.21 0.39 3.0 -5.9 1.2 .times. 10.sup.14 3.1 .times. 10.sup.13 +10.062 1180 1040 0.14 0.25 2.5 -2.0 2.1 .times. 10.sup.14 3.2 .times. 10.sup.13 +13.063 1120 750 0.10 0.23 4.1 -4.5 1.0 .times. 10.sup.14 7.0 .times. 10.sup.13 +10.264 1150 510 0.10 0.18 4.2 -6.0 9.8 .times. 10.sup.13 7.3 .times. 10.sup.13 +6.965 1110 1390 0.12 0.15 4.5 -6.7 1.3 .times. 10.sup.14 1.1 .times. 10.sup.13 +7.266 1070 1010 0.13 0.26 6.0 - 7.1 9.2 .times. 10.sup.13 6.0 .times. 10.sup.13 +1.567 1150 520 0.05 0.06 6.3 -7.2 1.1 .times. 10.sup.14 1.0 .times. 10.sup.13 +3.868 1130 550 0.06 0.09 5.1 -7.1 1.4 .times. 10.sup.14 1.5 .times. 10.sup.13 +2.069 1100 1030 0.22 0.48 3.1 -4.9 9.6 .times. 10.sup.13 1.2 .times. 10.sup.13 +4.270 1110 560 0.08 0.10 4.0 -6.2 1.2 .times. 10.sup.14 1.4 .times. 10.sup.13 +3.971 1100 610 0.16 0.25 1.7 -2.3 1.3 .times. 10.sup.14 1.0 .times. 10.sup.13 +4.272* 1130 1230 0.35 1.50 4.8 -6.5 9.8 .times. 10.sup.13 3.3 .times. 10.sup.13 +1.073* 1150 600 0.07 0.09 10.9 -12.5 1.5 .times. 10.sup.14 1.1 .times. 10.sup.13 +9.074* 1100 390 0.12 0.20 3.3 -4.0 1.1 .times. 10.sup.14 3.5 .times. 10.sup.13 +4.375* 1150 2010 0.21 2.00 12.9 -16.9 1.0 .times. 10.sup.14 1.2 .times. 10.sup.13 -4.376* 1120 1210 0.19 1.10 5.1 -7.0 1.3 .times. 10.sup.14 2.3 .times. 10.sup.13 -9.077* 1180 370 0.28 0.95 7.0 -8.9 9.0 .times. 10.sup.13 8.0 .times. 10.sup.13 +0.578* 1160 910 0.23 1.00 5.3 -6.8 1.2 .times. 10.sup.14 1.1 .times. 10.sup.13 +3.979* 1120 430 0.13 0.09 6.0 -7.0 1.2 .times. 10.sup.14 3.2 .times. 10.sup.13 +4.880* 1120 1320 0.13 0.22 7.7 -12.3 1.4 .times. 10.sup.14 2.7 .times. 10.sup.13 +2.281* 1160 520 0.32 1.00 6.4 -7.1 1.2 .times. 10.sup.14 3.0 .times. 10.sup.13 +2.882* 1230 870 0.18 0.40 2.0 -5.1 1.5 .times. 10.sup.14 2.3 .times. 10.sup.13 +2.083* 1140 1000 0.15 0.36 4.6 -11.1 1.2 .times. 10.sup.14 1.4 .times. 10.sup.13 +1.184* 1250 610 0.13 0.17 3.8 -4.2 9.6 .times. 10.sup.13 9.7 .times. 10.sup.11 +2.085* 1130 1130 0.70 0.91 3.3 -6.3 1.4 .times. 10.sup.14 1.2 .times. 10.sup.13 +7.686* 1110 460 0.03 0.07 5.3 -7.0 1.2 .times. 10.sup.14 1.8 .times. 10.sup.13 +3.987* 1200 1190 0.75 1.90 5.0 -9.5 9.5 .times. 10.sup.13 2.5 .times. 10.sup.13 +4.088* 1090 910 0.15 0.38 2.4 -2.8 8.7 .times. 10.sup.13 6.0 .times. 10.sup.12 +3.489* 1170 960 0.15 0.37 2.0 -2.2 9.2 .times. 10.sup.13 7.0 .times. 10.sup.11 +1.190 1100 1380 0.10 0.13 4.6 -6.7 1.3 .times. 10.sup.14 1.2 .times. 10.sup.13 +7.3__________________________________________________________________________
As can be seen from the data in Table 6, the dielectric ceramic composition of the present invention has a high dielectric constant of not less than 500, a low dielectric loss (tan .delta.) of not more than 0.5% even at 1 MHz, and a high specific resistance of not less than 10.sup.13 .OMEGA.-cm at room temperature and high temperature. Further, the dielectric constant is scarcely reduced even if a direct current voltage of 5 KV/mm is applied to the products. Further, the composition of the present invention has a considerably small temperature change rate of capacitance which is -7.2% at the maximum at +85.degree. C., and a low sintering temperature ranging from 1070.degree. to 1180.degree. C. which is lower by about 100.degree. to 200.degree. C. that that of the prior art.

Number	Date	Country
61-282772	Nov 1986	JPX
61-300251	Dec 1986	JPX
61-300252	Dec 1986	JPX

Number	Name	Date
4485181	Sakabe	Nov 1984
4552853	Kawabata et al.	Nov 1985
4601989	Sakabe et al.	Jul 1986

Dielectric ceramic composition

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