Patent Grant
11394095
The present invention relates to a dielectric filter having a waveguide structure, which is to be mainly used as a high-frequency component for a microwave band and a millimeter-wave band, and to an array antenna device including the dielectric filters.
Hitherto, there has been known a band pass filter (BPF) configured by using a dielectric waveguide integrated in a dielectric substrate. Such a BPF includes two conductor layers provided so as to sandwich a dielectric layer in the dielectric substrate, and conductor posts (vias) formed to pass through the dielectric layer so as to connect those two conductor layers to each other. Further, there has been proposed a structure in which, as a wall surface of the BPF, vias are inserted as signal input/output probes into a dielectric waveguide (substrate integrated waveguide: SIW), which is formed so as to be arrayed along a planar direction of the dielectric substrate, from cutouts formed in any one of the two conductor layers forming the dielectric waveguide (for example, see Patent Literature 1).
Further, hitherto, there has been proposed a dielectric filter having the following structure to reduce a loss as compared to the related art. A conductor pattern is formed on a leading end of a via inserted as the signal input/output probe into a dielectric waveguide formed in the substrate planar direction. The conductor pattern is formed so as to be larger than a cutout formed for inserting the via into the conductor layer (for example, see Patent Literature 2).
[PTL 1] JP H7-105645 A
[PTL 2] JP 3,996,879 B2
However, the related art has the following problems. In the dielectric filters described in Patent Literature 1 and Patent Literature 2, the dielectric waveguide is formed along the substrate planar direction. Therefore, the dielectric filter occupies a large area in the substrate planar direction. An array antenna device including a plurality of element antennas and a plurality of high-frequency components is required to have a filter for each path connecting between one element antenna and one high-frequency component. Therefore, in a case in which the dielectric filters described in Patent Literature 1 and Patent Literature 2 are applied when the array antenna device is configured with use of the dielectric substrate, an area to be occupied by the plurality of dielectric filters in the substrate planar direction is larger than an antenna aperture area in which the plurality of element antennas are arrayed and an area in which the plurality of high-frequency components are mounted on the substrate. Therefore, the device size is increased depending on the size of the dielectric filter in the substrate planar direction, and high-density wiring becomes difficult. Therefore, the length of each path connecting between the element antenna and the high-frequency component is increased, and there arises a problem of increased signal conversion loss.
Further, in the dielectric filters described in Patent Literature 1 and Patent Literature 2, an interval (gap) between the via inserted in the dielectric waveguide as the signal input/output probe and the conductor layer serving as a waveguide wall facing the via is dependent on a layer structure of the dielectric substrate in view of substrate manufacturing. Further, in the dielectric filter described in Patent Literature 2, the size of the conductor pattern formed on the leading end of the via inserted in the dielectric waveguide as the signal input/output probe is required to be about two times or more as large as the diameter of the via in view of substrate manufacturing. Therefore, in the dielectric filters described in Patent Literature 1 and Patent Literature 2, the degree of design freedom is reduced. Further, the dielectric filters described in Patent Literature 1 and Patent Literature 2 have difficulty in matching at the signal input/output probe portion, and hence there arises a problem of increased signal conversion loss.
The present invention has been made to solve the above-mentioned problems, and has an object to provide a dielectric filter and the like, which can be downsized in a planar direction of a dielectric substrate, are suitable for a laminated structure, have a high degree of design freedom, and have low loss in signal conversion.
According to the present invention, there is provided a dielectric filter including: a multilayer dielectric substrate, which includes a plurality of conductor layers formed so as to be separated apart from each other in a laminating direction, and is configured to propagate a high-frequency signal; a first strip line and a second strip line, which are formed so as to extend in a planar direction in conductor layers that are separated away from each other in the laminating direction; a dielectric waveguide formed of the conductor layers extending in the planar direction and conductor posts extending in the laminating direction, between the first strip line and the second strip line in the laminating direction of the multilayer dielectric substrate; a first strip line-waveguide converter, which is formed on an upper side of the first strip line in the laminating direction, and is configured to perform transmission line conversion between the dielectric waveguide and the first strip line; and a second strip line-waveguide converter, which is formed on a lower side of the second strip line in the laminating direction, and is configured to perform transmission line conversion between the dielectric waveguide and the second strip line.
According to the present invention, there are used a dielectric waveguide formed of a conductor pattern and vias in the laminating direction within the multilayer dielectric substrate, two strip lines formed in the planar direction of the multilayer dielectric substrate, and two strip line-waveguide converters each configured to perform transmission line conversion between the dielectric waveguide and each strip line. In this manner, it is possible to provide a dielectric filter or the like, for which an area to be occupied in the planar direction of the multilayer dielectric substrate is suppressed, and which has a high degree of design freedom and low loss during signal conversion.
According to the present invention, there are used a dielectric waveguide formed of a conductor pattern and vias in a laminating direction within a multilayer dielectric substrate, two strip lines formed in a planar direction of the multilayer dielectric substrate, and two waveguide-strip line converters each configured to perform transmission line conversion between the dielectric waveguide and each strip line. In this manner, it is possible to provide a dielectric filter for which an area to be occupied in the planar direction of the multilayer dielectric substrate is suppressed.
Further, in the waveguide-strip line converters, the conductor pattern is inserted in the dielectric waveguide as a signal input/output probe. Therefore, the degree of design freedom can be improved in a shape of the signal input/output probe portion and an interval between the probe and a conductor layer serving as a waveguide wall facing the probe. As a result, a dielectric filter with low loss can be provided.
Now, a dielectric filter and an array antenna device including the dielectric filter according to the present invention are described with reference to the drawings by way of embodiments. In the embodiments, like or corresponding parts are denoted by like symbols, and redundant description is omitted.
Part (a) of
Part (b) of
Part (c) of
In the first embodiment, description is mainly given of a dielectric filter including a dielectric waveguide 9101, two strip lines 6003 and 6006, and two strip line-waveguide converters 9001 and 9002. The dielectric waveguide 9101 is formed of a conductor pattern including conductor layers 2001 to 2008 in a laminating direction of a multilayer dielectric substrate 1001, and vias 3018, 3024, and 3057 serving as conductor posts. The two strip lines 6003 and 6006 are formed in a planar direction of the multilayer dielectric substrate 1001. The two strip line-waveguide converters 9001 are each configured to perform transmission line conversion between the dielectric waveguide 9101 and each of the strip lines 6003 and 6006.
In
The conductor layer 2001 is arranged on a surface layer of the multilayer dielectric substrate 1001.
The conductor layer 2002 is arranged in an inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2001.
The conductor layer 2003 is arranged in the inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2002 facing the conductor layer 2001 on its back surface side.
The conductor layer 2004 is arranged in the inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2003 facing the conductor layer 2002 on its back surface side.
The conductor layer 2005 is arranged in the inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2004 facing the conductor layer 2003 on its back surface side.
The conductor layer 2006 is arranged in the inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2005 facing the conductor layer 2004 on its back surface side.
The conductor layer 2007 is arranged in the inner layer of the multilayer dielectric substrate 1001 so as to face the conductor layer 2006 facing the conductor layer 2005 on its back surface side.
The conductor layer 2008 is arranged on a surface layer of the multilayer dielectric substrate 1001 on a side opposite to the side on which the conductor layer 2001 is arranged, so as to face the conductor layer 2007 facing the conductor layer 2006 on its back surface side.
The conductor layer 2002 to the conductor layer 2007 have an aperture 4002 to an aperture 4007, respectively.
The aperture 4002 to the aperture 4007 are arranged so as to oppose each other. That is, the aperture 4002 to the aperture 4007 are positioned so as to overlap each other in the laminating direction.
The inner side of each of the aperture 4002 to the aperture 4007 is not a hollow cavity. For example, the aperture 4002 to the aperture 4007 are filled with a dielectric body similarly to the multilayer dielectric substrate 1001 on the outer sides of the vias 3018 on both sides in part (a) of
The strip line 6003 is formed by eliminating a part of the conductor layer 2003.
The strip line 6006 is formed by eliminating a part of the conductor layer 2006.
The probe 5003 has one end connected to the strip line 6003, and another end arranged in the aperture 4003.
The probe 5006 has one end connected to the strip line 6006, and another end arranged in the aperture 4006.
A plurality of vias 3018 are arranged so as to surround the aperture 4002 to the aperture 4007 except for a part corresponding to the strip line 6003 and the strip line 6006, and to extend from the conductor layer 2001 to the conductor layer 2008 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2002 to the conductor layer 2007.
A plurality of vias 3024 are arranged along both longitudinal side surfaces of the strip line 6003 along the laminating direction, and extend from the conductor layer 2002 to the conductor layer 2004 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2003.
A plurality of vias 3057 are arranged along both longitudinal side surfaces of the strip line 6006 along the laminating direction, and extend from the conductor layer 2005 to the conductor layer 2007 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2006.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, the strip line-waveguide converter 9001 is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, the vias 3018, the probe 5003, the aperture 4002, and the aperture 4003. In the strip line-waveguide converter 9001, a dielectric waveguide part, which is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, and the vias 3018 in the laminating direction of the multilayer dielectric substrate 1001 to form a back-short waveguide, is formed so that a part from the conductor layer 2001 serving as a short-circuit surface to the probe 5003 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9002 is formed of the conductor layer 2006, the conductor layer 2007, the conductor layer 2008, the vias 3018, the probe 5006, the aperture 4006, and the aperture 4007. In the strip line-waveguide converter 9002, a dielectric waveguide part, which is formed of the conductor layer 2006, the conductor layer 2007, the conductor layer 2008, and the vias 3018 in the laminating direction of the multilayer dielectric substrate 1001 to form a back-short waveguide, is formed so that a part from the conductor layer 2008 serving as a short-circuit surface to the probe 5006 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the laminating direction of the multilayer dielectric substrate 1001, the dielectric waveguide 9101 is formed of the conductor layer 2004, the conductor layer 2005, the vias 3018, the aperture 4004, and the aperture 4005.
The strip line-waveguide converter 9001 and the strip line-waveguide converter 9002 are electromagnetically connected to each other via the dielectric waveguide 9101.
This simulation represents results of calculating a high-frequency signal propagating from the strip line 6003 to the strip line 6006 in the dielectric filter according to the first embodiment. In this case, in
In
Further, when attention is paid to the transmission characteristic A, it is found that a passband fractional bandwidth at which a passband edge attenuation amount becomes −3 dB is 0.4, and a stopband fractional bandwidth at which a stopband edge attenuation amount becomes −10 dB is 0.9.
That is, it is found that the dielectric filter according to the first embodiment operates as a bandpass-type filter (band pass filter).
As is clear from above, according to the dielectric filter of the first embodiment, the strip line-waveguide converter 9001 and the strip line-waveguide converter 9002 are electromagnetically connected to each other via the dielectric waveguide 9101. In this manner, in the dielectric waveguide 9101, propagation of a high-frequency signal in a frequency band that is equal to or lower than a waveguide cutoff frequency can be blocked. In the strip line-waveguide converter 9001 and the strip line-waveguide converter 9002, coupling to the dominant mode (TE10: transverse electric wave) of the dielectric waveguide 9101 is mainly performed, and coupling to a higher-order mode for propagating the high-frequency signal in a frequency band that is higher than that of the dominant mode is suppressed.
Therefore, there is provided an effect that a bandpass-type dielectric filter that is downsized in the planar direction of the multilayer dielectric substrate 1001 can be obtained.
In the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9012 is formed of the conductor layer 2006, the conductor layer 2007, the conductor layer 2008, the vias 3018, the probe 5106, the aperture 4006, and the aperture 4007.
Further, in the example of
In the example of
In the example of
However, the present invention is not limited to such a configuration, and there may be employed a dielectric filter in which the probe 5003 and the probe 5006 are arranged toward the waveguide axial direction from different wall surface sides of the waveguide walls of the dielectric waveguide 9101.
Part (a) of
Part (b) of
Part (c) of
In the example of
In addition, a probe 5206 has one end connected to the strip line 6006, and another end arranged in the aperture 4006.
A plurality of vias 3118 are arranged so as to surround the aperture 4002 to the aperture 4007 except for a part corresponding to the strip line 6003 and the strip line 6006, and to extend from the conductor layer 2001 to the conductor layer 2008 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2002 to the conductor layer 2007.
A plurality of vias 3124 are arranged along both longitudinal side surfaces of the strip line 6003 along the laminating direction and in a part of an edge of each of the aperture 4002, the aperture 4003, and the aperture 4004, and extend from the conductor layer 2002 to the conductor layer 2004 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2003.
A plurality of vias 3157 are arranged along both longitudinal side surfaces of the strip line 6006 along the laminating direction and in a part of an edge of each of the aperture 4005, the aperture 4006, and the aperture 4007, and extend from the conductor layer 2005 to the conductor layer 2007 to pass through the multilayer dielectric substrate 1001 and the conductor layer 2006.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9021 is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, the vias 3118, the vias 3124, the probe 5003, the aperture 4002, and the aperture 4003.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9022 is formed of the conductor layer 2006, the conductor layer 2007, the conductor layer 2008, the vias 3018, the vias 3157, the probe 5206, the aperture 4006, and the aperture 4007.
In the laminating direction of the multilayer dielectric substrate 1001, a dielectric waveguide 9121 is formed of the conductor layer 2004, the conductor layer 2005, the vias 3118, the aperture 4004, and the aperture 4005.
The strip line-waveguide converter 9021 and the strip line-waveguide converter 9022 are electromagnetically connected to each other via the dielectric waveguide 9121.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
Further, an aperture 4107 is formed by eliminating a part of the conductor layer 2007 in a dimension that is smaller than those of the aperture 4004 and the aperture 4005.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9031 is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, the vias 3018, the probe 5003, the aperture 4102, and the aperture 4003.
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9032 is formed of the conductor layer 2006, the conductor layer 2007, the conductor layer 2008, the vias 3018, the probe 5006, the aperture 4006, and the aperture 4107.
The strip line-waveguide converter 9031 and the strip line-waveguide converter 9032 are electromagnetically connected to each other via the dielectric waveguide 9101.
In the example of
a guide wavelength of a dielectric waveguide part from the probe 5003 to the conductor layer 2001 serving as the short-circuit surface (back-short) in the strip line-waveguide converter 9031; and
a guide wavelength of a dielectric waveguide part from the probe 5006 (5003) to the conductor layer 2008 serving as the short-circuit surface in the strip line-waveguide converter 9032. Therefore, the degree of design freedom can be improved. Further, an effect similar to that in the example of
When the aperture diameters of the aperture 4102 and the aperture 4107 are larger than the aperture diameters of the aperture 4003, the aperture 4004, the aperture 4005, and the aperture 4006, as compared to the example of
the guide wavelength of the dielectric waveguide part from the probe 5003 to the conductor layer 2001 serving as the short-circuit surface (back-short) in the strip line-waveguide converter 9031; and
the guide wavelength of the dielectric waveguide part from the probe 5006 (5003) to the conductor layer 2008 serving as the short-circuit surface (back-short) in the strip line-waveguide converter 9032. Therefore, the degree of design freedom can be improved. Further, an effect similar to that in the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
Further, in the example of
In the laminating direction of the multilayer dielectric substrate 1001, a dielectric waveguide 9141 is formed of the conductor layer 2004, the conductor layer 2005, the vias 3018, the aperture 4104, and the aperture 4105.
The strip line-waveguide converter 9001 and the strip line-waveguide converter 9002 are electromagnetically connected to each other via the dielectric waveguide 9141.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
In this case, the dumbbell shape refers to a shape in which, as illustrated in
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9051 is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, the vias 3018, the probe 5003, the aperture 4202, and the aperture 4003.
The strip line-waveguide converter 9051 and the strip line-waveguide converter 9002 are electromagnetically connected to each other via the dielectric waveguide 9101.
In the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
In this case, the H shape refers to a shape in which, as illustrated in
From the planar direction to the laminating direction of the multilayer dielectric substrate 1001, a strip line-waveguide converter 9061 is formed of the conductor layer 2001, the conductor layer 2002, the conductor layer 2003, the vias 3018, the probe 5003, the aperture 4302, and the aperture 4003.
The strip line-waveguide converter 9061 and the strip line-waveguide converter 9002 are electromagnetically connected to each other via the dielectric waveguide 9101.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In the example of
In the above-mentioned first embodiment, description has been given of the dielectric filter including two strip line-waveguide converters and a dielectric waveguide. However, the present invention is not limited thereto, and there may be employed a dielectric filter having a structure in which a filter function is added to the strip line-waveguide converters or the dielectric waveguide.
Part (a) of
Part (a) of
Part (b) of
Part (c) of
In
A probe 5306 has one end connected to the strip line 6006, and another end connected to a resonance conductor 5406 arranged in the aperture 4006 as illustrated in part (b) of
The resonance conductor 5403 is formed so that a length from one end connected to the probe 5303 to each open end as a destination of the branch corresponds to ¼ wavelength of a frequency at which propagation of a high-frequency signal is desired to be blocked.
The resonance conductor 5406 is formed so that a length from one end connected to the probe 5306 to each open end as a destination of the branch corresponds to ¼ wavelength of a frequency at which propagation of a high-frequency signal is desired to be blocked.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In
a conductor layer 20010, a conductor layer 20020, a conductor layer 20030, a conductor layer 20040, a conductor layer 20050, a conductor layer 20060, a conductor layer 20070, a conductor layer 20080, a conductor layer 20090, a conductor layer 20100, and a conductor layer 20110;
vias 31110, vias 30240, vias 38100, and vias 30570; and
a strip line 60030, a strip line 60090, a probe 50030, and a probe 50090.
The conductor layer 20010 is arranged on a surface layer of the multilayer dielectric substrate 10010.
The conductor layer 20020 is arranged in an inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20010.
The conductor layer 20030 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20020 facing the conductor layer 20010 on its back surface side.
The conductor layer 20040 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20030 facing the conductor layer 20020 on its back surface side.
The conductor layer 20050 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20040 facing the conductor layer 20030 on its back surface side.
The conductor layer 20060 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20050 facing the conductor layer 20040 on its back surface side.
The conductor layer 20070 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20060 facing the conductor layer 20050 on its back surface side.
The conductor layer 20080 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20070 facing the conductor layer 20060 on its back surface side.
The conductor layer 20090 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20080 facing the conductor layer 20070 on its back surface side.
The conductor layer 20100 is arranged in the inner layer of the multilayer dielectric substrate 10010 so as to face the conductor layer 20090 facing the conductor layer 20080 on its back surface side.
The conductor layer 20110 is arranged on a surface layer of the multilayer dielectric substrate 10010 on a side opposite to the side on which the conductor layer 20010 is arranged, so as to face the conductor layer 20100 facing the conductor layer 20090 on its back surface side.
The conductor layer 20020 to the conductor layer 20100 have an aperture 40020 to an aperture 40100, respectively, which are formed by eliminating parts of the conductor layer 20020 to the conductor layer 20100.
The aperture 40020 to the aperture 40100 are arranged so as to oppose each other. That is, the aperture 40020 to the aperture 40100 are positioned so as to overlap each other in the laminating direction.
The inner side of each of the aperture 40020 to the aperture 40100 is not a cavity. For example, the aperture 40020 to the aperture 40100 are filled with a dielectric body similarly to the multilayer dielectric substrate 10010 on the outer sides of the vias 31110 on both sides in part (a) of
The strip line 60030 is formed by eliminating a part of the conductor layer 20030.
The strip line 60090 is formed by eliminating a part of the conductor layer 20090.
The probe 50030 has one end connected to the strip line 60030, and another end arranged in the aperture 40030.
The probe 50090 has one end connected to the strip line 60090, and another end arranged in the aperture 40090.
A plurality of vias 31110 are arranged so as to surround the aperture 40020 to the aperture 40010 except for a part corresponding to the strip line 60030 and the strip line 60090, and to extend from the conductor layer 20010 to the conductor layer 20110 to pass through the multilayer dielectric substrate 10010 and the conductor layer 20020 to the conductor layer 20100.
A plurality of vias 30240 are arranged along both longitudinal side surfaces of the strip line 60030 along the laminating direction, and extend from the conductor layer 20020 to the conductor layer 20040 to pass through the multilayer dielectric substrate 10010 and the conductor layer 20030.
A plurality of vias 30570 are arranged in a part of an edge of each of the aperture 40050, the aperture 40060, and the aperture 40070 so as to extend from the conductor layer 20050 to the conductor layer 20070 to pass through the multilayer dielectric substrate 10010 and the conductor layer 20060.
A plurality of vias 38100 are arranged along both longitudinal side surfaces of the strip line 60090 along the laminating direction, and extend from the conductor layer 20080 to the conductor layer 20110 to pass through the multilayer dielectric substrate 10010 and the conductor layer 20090.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10010, a strip line-waveguide converter 90010 is formed of the conductor layer 20010, the conductor layer 20020, the conductor layer 20030, the vias 31110, the probe 50030, the aperture 40020, and the aperture 40030.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10010, a strip line-waveguide converter 90020 is formed of the conductor layer 20090, the conductor layer 20100, the conductor layer 20110, the vias 31110, the probe 50090, the aperture 40090, and the aperture 40100.
In the laminating direction of the multilayer dielectric substrate 10010, a dielectric waveguide 91010 is formed of the conductor layer 20040, the conductor layer 20050, the conductor layer 20060, the conductor layer 20070, the conductor layer 20080, the vias 31110, the vias 30570, the aperture 40040, the aperture 40050, the aperture 40060, the aperture 40070, and the aperture 40080.
The aperture diameters of the aperture 40050 and the aperture 40070 of the dielectric waveguide 91010 are smaller than the aperture diameter of the aperture 40060. Therefore, in a part of the dielectric waveguide 91010, a resonance space 92010 is formed of the conductor layer 20050, the conductor layer 20060, the conductor layer 20070, the vias 31110, the vias 30570, the aperture 40050, the aperture 40060, and the aperture 40070.
The strip line-waveguide converter 90010 and the strip line-waveguide converter 90020 are electromagnetically connected to each other via the dielectric waveguide 91010.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
The dielectric waveguide 91010 includes a resonance conductor 31570 having a length from the planar direction to the laminating direction of the multilayer dielectric substrate 10010, which corresponds to ¼ wavelength of a frequency at which propagation of a high-frequency signal is desired to be blocked. Further, the resonance conductor 31570 has one end connected to the conductor layer 20070, and another end arranged in the conductor layer 20050.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In the dielectric waveguide 91010, a conductor pattern 21060 is provided only in the planar direction of the dielectric waveguide. Other parts are the same as those in the example of
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In the dielectric waveguide 91010, there is provided a resonance conductor 32570 that is a half wavelength conductor. The resonance conductor 32570 has a length corresponding to half wavelength of a frequency at which propagation of a high-frequency signal is desired to be blocked in the laminating direction of the multilayer dielectric substrate 10010. Further, the resonance conductor 32570 has one end arranged in the conductor layer 20070, and another end arranged in the conductor layer 20050.
In the example of
In the example of
Part (a) of
Part (b) of
Part (c) of
In
a conductor layer 20011, a conductor layer 20021, a conductor layer 20031, a conductor layer 20041, a conductor layer 20051, a conductor layer 20061, a conductor layer 20071, a conductor layer 20081, a conductor layer 20091, and a conductor layer 20101;
vias 30151, vias 36101, vias 30241, vias 30791, vias 86101a, and vias 86101b; and
a strip line 60031, a strip line 60081, a probe 50031, and a probe 50081.
The conductor layer 20011 is arranged on a surface layer of the multilayer dielectric substrate 10011.
The conductor layer 20021 is arranged in an inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20011.
The conductor layer 20031 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20021 facing the conductor layer 20011 on its back surface side.
The conductor layer 20041 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20031 facing the conductor layer 20021 on its back surface side.
The conductor layer 20051 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20041 facing the conductor layer 20031 on its back surface side.
The conductor layer 20061 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20051 facing the conductor layer 20041 on its back surface side.
The conductor layer 20071 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20061 facing the conductor layer 20051 on its back surface side.
The conductor layer 20081 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20071 facing the conductor layer 20061 on its back surface side.
The conductor layer 20091 is arranged in the inner layer of the multilayer dielectric substrate 10011 so as to face the conductor layer 20081 facing the conductor layer 20071 on its back surface side.
The conductor layer 20101 is arranged on a surface layer of the multilayer dielectric substrate 10011 on a side opposite to the side on which the conductor layer 20011 is arranged, so as to face the conductor layer 20091 facing the conductor layer 20081 on its back surface side.
The conductor layer 20021 to the conductor layer 20091 have an aperture 40021 to an aperture 40091, respectively, which are formed by eliminating parts of the conductor layer 20021 to the conductor layer 20091.
The aperture 40021 to the aperture 40091 are arranged so as to oppose each other. That is, the aperture 40021 to the aperture 40091 are positioned so as to overlap each other in the laminating direction.
The strip line 60031 is formed by eliminating a part of the conductor layer 20031.
The strip line 60081 is formed by eliminating a part of the conductor layer 20081.
The probe 50031 has one end connected to the strip line 60031, and another end arranged in the aperture 40031.
The probe 50081 has one end connected to the strip line 60081, and another end arranged in the aperture 40081.
A plurality of vias 30151 are arranged so as to surround the aperture 40021, the aperture 40031, the aperture 40041, and the aperture 40051 except for a part corresponding to the strip line 60031, and to extend from the conductor layer 20011 to the conductor layer 20051 to pass through the multilayer dielectric substrate 10011, the conductor layer 20021, the conductor layer 20031, and the conductor layer 20041.
A plurality of vias 36101 are arranged so as to surround the aperture 40061, the aperture 40071, the aperture 40081, and the aperture 40091 except for a part corresponding to the strip line 60081, and to extend from the conductor layer 20061 to the conductor layer 20101 to pass through the multilayer dielectric substrate 10011, the conductor layer 20071, the conductor layer 20081, and the conductor layer 20091.
A plurality of vias 30241 are arranged along both longitudinal side surfaces of the strip line 60031 along the laminating direction, and extend from the conductor layer 20021 to the conductor layer 20041 to pass through the multilayer dielectric substrate 10011 and the conductor layer 20031.
A plurality of vias 30791 are arranged along both longitudinal side surfaces of the strip line 60081 along the laminating direction, and extend from the conductor layer 20071 to the conductor layer 20091 to pass through the multilayer dielectric substrate 10011 and the conductor layer 20081.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10011, a strip line-waveguide converter 90011 is formed of the conductor layer 20011, the conductor layer 20021, the conductor layer 20031, the vias 30151, the probe 50031, the aperture 40021, and the aperture 40031.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10011, a strip line-waveguide converter 90021 is formed of the conductor layer 20081, the conductor layer 20091, the conductor layer 20101, the vias 36101, the probe 50081, the aperture 40081, and the aperture 40091.
In the laminating direction of the multilayer dielectric substrate 10011, a dielectric waveguide 91011 is formed of the conductor layer 20041, the conductor layer 20051, the conductor layer 20061, the conductor layer 20071, the vias 30151, the vias 36101, the aperture 40041, the aperture 40051, the aperture 40061, and the aperture 40071.
A cutout 41061a and a cutout 41061b are each formed by eliminating a part of the conductor layer 20061 at a position separated away from an end portion of a long side of the aperture 40061 by about λe/4 (λe: effective wavelength of a signal wave propagating in a plane direction in a space filled with a dielectric on the multilayer dielectric substrate). The cutout 41061a and the cutout 41061b oppose each other across the aperture 40061.
A plurality of vias 86101a formed of conductors are arranged along an edge of the cutout 41061a on the opposite side of the side on which the dielectric waveguide 91011 is positioned to the vicinity of the vias 36101, so as to connect the conductor layer 20061 and the conductor layer 20101 to each other.
A plurality of vias 86101b formed of conductors are arranged along an edge of the cutout 41061b on the opposite side of the side on which the dielectric waveguide 91011 is positioned to the vicinity of the vias 36101, so as to connect the conductor layer 20061 and the conductor layer 20101 to each other.
A choke path 70061a is a space extending from the end portion of the aperture 40061 to the cutout 41061a in a space sandwiched between the conductor layer 20051 and the conductor layer 20061.
A choke path 70061b is a space extending from the end portion of the aperture 40061 to the cutout 41061b in a space sandwiched between the conductor layer 20051 and the conductor layer 20061.
A choke path 70071a is a space surrounded by the vias 86101a and the vias 36101 in a space sandwiched between the conductor layer 20061 and the conductor layer 20071.
A choke path 70071b is a space surrounded by the vias 86101b and the vias 36101 in a space sandwiched between the conductor layer 20061 and the conductor layer 20071.
Those spaces are not hollow cavities but filled with dielectric bodies.
Further, the above-mentioned vias 86101a are formed so as to surround a part including the cutout 41061a, the choke path 70061a, and the choke path 70071a from the outer side in a C-shape. Further, the above-mentioned vias 86101b are formed so as to surround a part including the cutout 41061b, the choke path 70061b, and the choke path 70071b from the outer side in a C-shape.
At side portions of the dielectric waveguide 91011, as choke structures formed of the choke path 70061a and the choke path 70071a and of the choke path 70061b and the choke path 70071b, there are added spaces each having a length corresponding to half wavelength of a frequency at which a high-frequency signal is to be propagated.
The strip line-waveguide converter 90011 and the strip line-waveguide converter 90021 are electromagnetically connected to each other via the dielectric waveguide 91011.
In the example of
In the above-mentioned first embodiment and second embodiment, description has been given of the dielectric filter including one multilayer dielectric substrate. However, there may be employed a dielectric filter including two or more multilayer dielectric substrates.
Part (a) of
Part (b) of
Part (c) of
In
a conductor layer 20012, a conductor layer 20022, a conductor layer 20032, a conductor layer 20042, and a conductor layer 20052;
vias 30152 and vias 30242; and
a strip line 60032, and a probe 50032.
In a multilayer dielectric substrate 10022, there are provided:
a conductor layer 20062, a conductor layer 20072, a conductor layer 20082, a conductor layer 20092, and a conductor layer 20102;
vias 36102, vias 30792, vias 86102a, and vias 86102b; and
a strip line 60082, and a probe 50082.
The conductor layer 20012 is arranged on a surface layer of the multilayer dielectric substrate 10012.
The conductor layer 20022 is arranged in an inner layer of the multilayer dielectric substrate 10012 so as to face the conductor layer 20012.
The conductor layer 20032 is arranged in the inner layer of the multilayer dielectric substrate 10012 so as to face the conductor layer 20022 facing the conductor layer 20012 on its back surface side.
The conductor layer 20042 is arranged in the inner layer of the multilayer dielectric substrate 10012 so as to face the conductor layer 20032 facing the conductor layer 20022 on its back surface side.
The conductor layer 20052 is arranged on a surface layer of the multilayer dielectric substrate 10012 on a side opposite to the side on which the conductor layer 20012 is arranged, so as to face the conductor layer 20042 facing the conductor layer 20032 on its back surface side.
The conductor layer 20062 is arranged on a surface layer of the multilayer dielectric substrate 10022 so as to face the conductor layer 20052 of the multilayer dielectric substrate 10012.
The conductor layer 20072 is arranged in an inner layer of the multilayer dielectric substrate 10022 so as to face the conductor layer 20062.
The conductor layer 20082 is arranged in an inner layer of the multilayer dielectric substrate 10022 so as to face the conductor layer 20072 facing the conductor layer 20062 on its back surface side.
The conductor layer 20092 is arranged in the inner layer of the multilayer dielectric substrate 10022 so as to face the conductor layer 20082 facing the conductor layer 20072 on its back surface side.
The conductor layer 20102 is arranged on a surface layer of the multilayer dielectric substrate 10022 on a side opposite to the side on which the conductor layer 20062 is arranged, so as to face the conductor layer 20092 facing the conductor layer 20082 on its back surface side.
The conductor layer 20022 to the conductor layer 20092 have an aperture 40022 to an aperture 40092, respectively, which are formed by eliminating parts of the conductor layer 20022 to the conductor layer 20092.
The aperture 40022 to the aperture 40092 are arranged so as to oppose each other. That is, the aperture 40022 to the aperture 40092 are positioned so as to overlap each other in the laminating direction.
The strip line 60032 is formed by eliminating a part of the conductor layer 20032.
The strip line 60082 is formed by eliminating a part of the conductor layer 20082.
The probe 50032 has one end connected to the strip line 60032, and another end arranged in the aperture 40032.
The probe 50082 has one end connected to the strip line 60082, and another end arranged in the aperture 40082.
A plurality of vias 30152 are arranged so as to surround the aperture 40022 to the aperture 40052 except for a part corresponding to the strip line 60032, and to extend from the conductor layer 20012 to the conductor layer 20052 to pass through the multilayer dielectric substrate 10012 and the conductor layer 20022 to the conductor layer 20042.
A plurality of vias 36102 are arranged so as to surround the aperture 40062 to the aperture 40092 except for a part corresponding to the strip line 60082, and to extend from the conductor layer 20062 to the conductor layer 20102 to pass through the multilayer dielectric substrate 10022 and the conductor layer 20072 to the conductor layer 20092.
A plurality of vias 30242 are arranged along both longitudinal side surfaces of the strip line 60032 along the laminating direction, and extend from the conductor layer 20022 to the conductor layer 20042 to pass through the multilayer dielectric substrate 10012 and the conductor layer 20032.
A plurality of vias 30792 are arranged along both longitudinal side surfaces of the strip line 60082 along the laminating direction, and extend from the conductor layer 20072 to the conductor layer 20092 to pass through the multilayer dielectric substrate 10022 and the conductor layer 20082.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10012, a strip line-waveguide converter 90012 is formed of the conductor layer 20012, the conductor layer 20022, the conductor layer 20032, the vias 30152, the probe 50032, the aperture 40022, and the aperture 40032.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10022, a strip line-waveguide converter 90022 is formed of the conductor layer 20082, the conductor layer 20092, the conductor layer 20102, the vias 36102, the probe 50082, the aperture 40082, and the aperture 40092.
In the laminating direction of the multilayer dielectric substrate 10012, a dielectric waveguide 91012 is formed of the conductor layer 20042, the conductor layer 20052, the vias 30152, the aperture 40042, and the aperture 40052.
In the laminating direction of the multilayer dielectric substrate 10022, a dielectric waveguide 91022 is formed of the conductor layer 20062, the conductor layer 20072, the vias 36102, the aperture 40062, and the aperture 40072.
A cutout 41062a and a cutout 41062b are each formed by eliminating a part of the conductor layer 20062 at a position separated away from an end portion of a long side of the aperture 40062 by λ/4 (λ: free space wavelength of the signal wave). The cutout 41062a and the cutout 41062b oppose each other across the aperture 40062.
A plurality of vias 86102a formed of conductors are arranged along an edge of the cutout 41062a on the opposite side of the side on which the dielectric waveguide 91012 is positioned to the vicinity of the vias 36102, so as to connect the conductor layer 20062 and the conductor layer 20102 to each other.
A plurality of vias 86102b formed of conductors are arranged along an edge of the cutout 41062b on the opposite side of the side on which the dielectric waveguide 91012 is positioned to the vicinity of the vias 36102, so as to connect the conductor layer 20062 and the conductor layer 20102 to each other.
A choke path 70062a is a space extending from the end portion of the aperture 40062 to the cutout 41062a in a space sandwiched between the conductor layer 20052 and the conductor layer 20062.
A choke path 70062b is a space extending from the end portion of the aperture 40062 to the cutout 41062b in a space sandwiched between the conductor layer 20052 and the conductor layer 20062.
A choke path 70072a is a space surrounded by the vias 86102a and the vias 36102 in a space sandwiched between the conductor layer 20062 and the conductor layer 20072.
A choke path 70072b is a space surrounded by the vias 86102b and the vias 36102 in a space sandwiched between the conductor layer 20062 and the conductor layer 20072.
Those spaces are not hollow cavities but filled with dielectric bodies.
Further, the above-mentioned vias 86102a are formed so as to surround a part including the cutout 41062a, the choke path 70062a, and the choke path 70072a from the outer side in a C-shape. Further, the above-mentioned vias 86102b are formed so as to surround a part including the cutout 41062b, the choke path 70062b, and the choke path 70072b from the outer side in a C-shape.
The dielectric waveguide 91012 and the dielectric waveguide 91022 are electromagnetically connected to each other by, as choke structures formed of the choke path 70061a and the choke path 70071a and of the choke path 70061b and the choke path 70071b, spaces each having a length corresponding to half wavelength of a frequency at which a high-frequency signal is to be propagated.
The strip line-waveguide converter 90012 and the strip line-waveguide converter 90022 are electromagnetically connected to each other via the dielectric waveguide 91012 and the dielectric waveguide 91022.
In the example of
In the above-mentioned first embodiment, second embodiment, and third embodiment, description has been given of the dielectric filter in which the back-short waveguide in the strip line-waveguide converter is formed in the laminating direction of the multilayer dielectric substrate. However, there may be employed a dielectric filter in which the back-short waveguide in the strip line-waveguide converter is formed in the planar direction of the multilayer dielectric substrate.
Part (a) of
Part (b) of
Part (c) of
In
The conductor layer 20013 is arranged on a surface layer of the multilayer dielectric substrate 10013.
The conductor layer 20023 is arranged in an inner layer of the multilayer dielectric substrate 10013 so as to face the conductor layer 20013.
The conductor layer 20033 is arranged in the inner layer of the multilayer dielectric substrate 10013 so as to face the conductor layer 20023 facing the conductor layer 20013 on its back surface side.
The conductor layer 20043 is arranged in the inner layer of the multilayer dielectric substrate 10013 so as to face the conductor layer 20033 facing the conductor layer 20023 on its back surface side.
The conductor layer 20053 is arranged in the inner layer of the multilayer dielectric substrate 10013 so as to face the conductor layer 20043 facing the conductor layer 20033 on its back surface side.
The conductor layer 20063 is arranged on a surface layer of the multilayer dielectric substrate 10013 on a side opposite to the side on which the conductor layer 20013 is arranged, so as to face the conductor layer 20053 facing the conductor layer 20043 on its back surface side.
The conductor layer 20033 and the conductor layer 20043 have an aperture 40033 and an aperture 40043, respectively.
The aperture 40033 to the aperture 40043 are arranged so as to oppose each other. That is, the aperture 40033 and the aperture 40043 are positioned so as to overlap each other in the laminating direction.
The strip line 60023 is formed by eliminating a part of the conductor layer 20023.
The strip line 60053 is formed by eliminating a part of the conductor layer 20053.
The conductor layer 20023 has a cutout 41123 and a cutout 41223, which are connected to one end of the strip line 60023 at the connecting portion 80023.
The conductor layer 20053 has a cutout 41153 and a cutout 41253, which are connected to one end of the strip line 60053 at the connecting portion 80053.
That is, the cutouts are structures formed by bending and extending the cutouts on both sides of the strip line at the connecting portion at a right angle to opposite directions on both sides.
A plurality of vias 30163 are arranged so as to surround the aperture 40033 to the aperture 40043 except for a part corresponding to the strip line 60023 and the strip line 60053, and are further arranged along both longitudinal side surfaces of the strip line 60023 and the strip line 60053. Further, the vias 30163 extend from the conductor layer 20013 to the conductor layer 20063 to pass through the multilayer dielectric substrate 10013 and the conductor layer 20023 to the conductor layer 20053.
A plurality of vias 30343 are arranged to extend from the conductor layer 20033 to the conductor layer 20043 to pass through the multilayer dielectric substrate 10013.
In the planar direction of the multilayer dielectric substrate 10013, a strip line-waveguide converter 90013 is formed of the conductor layer 20013, the conductor layer 20023, the conductor layer 20033, the vias 30163, the connecting portion 80023, the cutout 41123, and the cutout 41223. In the strip line-waveguide converter 90013, a dielectric waveguide part, which is formed of the vias 30163, the conductor layer 20013, and the conductor layer 20023 in the planar direction of the multilayer dielectric substrate 10013 to form the back-short waveguide, is formed so that a part from a part of the via 30163, which is positioned on the opposite side of the strip line 60023 across the connecting portion 80023 to serve as a short-circuit portion, to the connecting portion 80023 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the planar direction of the multilayer dielectric substrate 10013, a strip line-waveguide converter 90023 is formed of the conductor layer 20043, the conductor layer 20053, the conductor layer 20063, the vias 30163, the connecting portion 80053, the cutout 41153, and the cutout 41253. In the strip line-waveguide converter 90023, a dielectric waveguide part, which is formed of the vias 30163, the conductor layer 20053, and the conductor layer 20063 in the planar direction of the multilayer dielectric substrate 10013 to form the back-short waveguide, is formed so that a part from a part of the via 30163, which is positioned on the opposite side of the strip line 60053 across the connecting portion 80053 to serve as a short-circuit portion, to the connecting portion 80053 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the laminating direction of the multilayer dielectric substrate 10013, a dielectric waveguide 91013 is formed of the conductor layer 20023, the conductor layer 20033, the conductor layer 20043, the conductor layer 20053, the vias 30163, the vias 30343, the aperture 40033, and the aperture 40043.
The above-mentioned dielectric waveguide formed in the planar direction of the multilayer dielectric substrate 10013 forms a planar dielectric waveguide, and the dielectric waveguide formed in the laminating direction of the multilayer dielectric substrate 10013 forms a vertical dielectric waveguide.
The strip line-waveguide converter 90013 and the strip line-waveguide converter 90023 are electromagnetically connected to each other via the dielectric waveguide 91013.
In the example of
In the above-mentioned first embodiment, second embodiment, third embodiment, and Example 1 of the fourth embodiment, description has been given of the dielectric filter in which the strip line-waveguide converters have the same configuration. However, there may be employed a dielectric filter using strip line-waveguide converters having different configurations.
Part (a) of
Part (b) of
Part (c) of
In
a conductor layer 20014, a conductor layer 20024, a conductor layer 20034, a conductor layer 20044, a conductor layer 20054, a conductor layer 20064, a conductor layer 20074, and a conductor layer 20084;
vias 30184 and vias 30154; and
a strip line 60034, a strip line 60064, a probe 50034, and a connecting portion 80064.
The conductor layer 20014 is arranged on a surface layer of the multilayer dielectric substrate 10014.
The conductor layer 20024 is arranged in an inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20014.
The conductor layer 20034 is arranged in the inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20024 facing the conductor layer 20014 on its back surface side.
The conductor layer 20044 is arranged in the inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20034 facing the conductor layer 20024 on its back surface side.
The conductor layer 20054 is arranged in the inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20044 facing the conductor layer 20034 on its back surface side.
The conductor layer 20064 is arranged in the inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20054 facing the conductor layer 20044 on its back surface side.
The conductor layer 20074 is arranged in the inner layer of the multilayer dielectric substrate 10014 so as to face the conductor layer 20064 facing the conductor layer 20054 on its back surface side.
The conductor layer 20084 is arranged on a surface layer of the multilayer dielectric substrate 10014 on a side opposite to the side on which the conductor layer 20014 is arranged, so as to face the conductor layer 20074 facing the conductor layer 20064 on its back surface side.
The conductor layer 20024 to the conductor layer 20054 have an aperture 40024 to an aperture 40054, respectively, which are formed by eliminating parts of the conductor layer 20024 to the conductor layer 20054.
The aperture 40024 to the aperture 40054 are arranged so as to oppose each other. That is, the aperture 40024 to the aperture 40054 are positioned so as to overlap each other in the laminating direction.
The strip line 60034 is formed by eliminating a part of the conductor layer 20034.
The strip line 60064 is formed by eliminating a part of the conductor layer 20064.
The probe 50034 has one end connected to the strip line 60034, and another end arranged in the aperture 40034.
The conductor layer 20064 has a cutout 41164 and a cutout 41264, which are connected to one end of the strip line 60064 at the connecting portion 80064.
A plurality of vias 30184 are arranged so as to surround the aperture 40024 to the aperture 40054 except for a part corresponding to the strip line 60034 and the strip line 60064, and are arranged along both longitudinal side surfaces of the strip line 60034 and the strip line 60064. Further, the vias 30184 extend from the conductor layer 20014 to the conductor layer 20084 to pass through the multilayer dielectric substrate 10014 and the conductor layer 20024 to the conductor layer 20074.
A plurality of vias 30154 are arranged so as to extend from the conductor layer 20014 to the conductor layer 20054 to pass through the multilayer dielectric substrate 10014.
From the planar direction to the laminating direction of the multilayer dielectric substrate 10014, a strip line-waveguide converter 90014 is formed of the conductor layer 20014, the conductor layer 20024, the conductor layer 20034, the vias 30184, the probe 50034, the aperture 40024, and the aperture 40034. In the strip line-waveguide converter 90014, a dielectric waveguide part, which is formed of the conductor layer 20014, the conductor layer 20024, the conductor layer 20034, and the vias 30184 in the laminating direction of the multilayer dielectric substrate 10014 to form the back-short waveguide, is formed so that a part from the conductor layer 20014 serving as the short-circuit surface to the probe 50034 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the planar direction of the multilayer dielectric substrate 10014, a strip line-waveguide converter 90024 is formed of the conductor layer 20054, the conductor layer 20064, the conductor layer 20074, the vias 30184, the connecting portion 80064, the cutout 41164, and the cutout 41264. In the strip line-waveguide converter 90024, a dielectric waveguide part, which is formed of the vias 30184, the conductor layer 20064, and the conductor layer 20074 in the planar direction of the multilayer dielectric substrate 10014 to form the back-short waveguide, is formed so that a part from a part of the vias 30184, which is positioned on the opposite side of the strip line 60064 across the connecting portion 80064 to serve as the short-circuit portion, to the connecting portion 80064 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the laminating direction of the multilayer dielectric substrate 10014, a dielectric waveguide 91014 is formed of the conductor layer 20044, the conductor layer 20054, the vias 30184, the vias 30154, the aperture 40044, and the aperture 40054.
The strip line-waveguide converter 90014 and the strip line-waveguide converter 90024 are electromagnetically connected to each other via the dielectric waveguide 91014.
In the example of
In the above-mentioned first embodiment, second embodiment, third embodiment, and Example 1 and Example 2 of the fourth embodiment, description has been given of the dielectric filter using a single-input and single-output strip line-waveguide converter. However, there may be employed a dielectric filter using a multi-input and multi-output strip line-waveguide converter.
Part (a) of
Part (b) of
Part (c) of
In
a conductor layer 20015, a conductor layer 20025, a conductor layer 20035, a conductor layer 20045, a conductor layer 20055, and a conductor layer 20065;
vias 30165, vias 30345, and vias 30145; and
a strip line 60025, a strip line 60055a, a strip line 60055b, a connecting portion 80025, a connecting portion 80055a, and a connecting portion 80055b.
The conductor layer 20015 is arranged on a surface layer of the multilayer dielectric substrate 10015.
The conductor layer 20025 is arranged in an inner layer of the multilayer dielectric substrate 10015 so as to face the conductor layer 20015.
The conductor layer 20035 is arranged in the inner layer of the multilayer dielectric substrate 10015 so as to face the conductor layer 20025 facing the conductor layer 20015 on its back surface side.
The conductor layer 20045 is arranged in the inner layer of the multilayer dielectric substrate 10015 so as to face the conductor layer 20035 facing the conductor layer 20025 on its back surface side.
The conductor layer 20055 is arranged in the inner layer of the multilayer dielectric substrate 10015 so as to face the conductor layer 20045 facing the conductor layer 20035 on its back surface side.
The conductor layer 20065 is arranged on a surface layer of the multilayer dielectric substrate 10015 on a side opposite to the side on which the conductor layer 20015 is arranged, so as to face the conductor layer 20055 facing the conductor layer 20045 on its back surface side.
The conductor layer 20035 and the conductor layer 20045 have an aperture 40035 and an aperture 40045, respectively.
The aperture 40035 and the aperture 40045 are arranged so as to oppose each other. That is, the aperture 40035 and the aperture 40045 are positioned so as to overlap each other in the laminating direction.
The strip line 60025 is formed by eliminating a part of the conductor layer 20025.
The strip line 60055a is formed by eliminating a part of the conductor layer 20055.
The strip line 60055b is formed by eliminating a part of the conductor layer 20055 on the opposite side of the strip line 60055a across the connecting portion 80055a and the connecting portion 80055b.
The conductor layer 20025 has a cutout 41125 and a cutout 41225, which are connected to one end of the strip line 60025 at the connecting portion 80025.
The conductor layer 20055 has a cutout 41155a, a cutout 41255a, a cutout 41155b, and a cutout 41255b. The cutout 41155a and the cutout 41255a are connected to one end of the strip line 60055a at the connecting portion 80055a, and the cutout 41155b and the cutout 41255b are connected to one end of the strip line 60055b at the connecting portion 80055b.
A plurality of vias 30165 are arranged so as to surround the aperture 40035 to the aperture 40045 except for parts corresponding to the strip line 60025, the strip line 60055a, and the strip line 60055b, and are arranged along the both longitudinal side surfaces of the strip line 60025, the strip line 60055a, and the strip line 60055b. Further, the vias 30165 extend from the conductor layer 20015 to the conductor layer 20065 to pass through the multilayer dielectric substrate 10015 and the conductor layer 20025 to the conductor layer 20055.
A plurality of vias 30345 are arranged so as to extend from the conductor layer 20035 to the conductor layer 20045 to pass through the multilayer dielectric substrate 10015.
A plurality of vias 30145 are arranged so as to extend from the conductor layer 20015 to the conductor layer 20045 to pass through the multilayer dielectric substrate 10015.
In the planar direction of the multilayer dielectric substrate 10015, a strip line-waveguide converter 90015 is formed of the conductor layer 20015, the conductor layer 20025, the conductor layer 20035, the vias 30165, the vias 30145, the connecting portion 80025, the cutout 41125, and the cutout 41225. In the strip line-waveguide converter 90015, a dielectric waveguide part, which is formed of the vias 30165, the vias 30145, the conductor layer 20015, and the conductor layer 20025 in the planar direction of the multilayer dielectric substrate 10015 to form the back-short waveguide, is formed so that a part from a part of the vias 30145, which is positioned on the opposite side of the strip line 60025 across the connecting portion 80025 to serve as the short-circuit portion, to the connecting portion 80025 has a length corresponding to ¼ wavelength of a guide wavelength of the back-short waveguide.
In the planar direction of the multilayer dielectric substrate 10015, a strip line-waveguide converter 90025 is formed of the conductor layer 20045, the conductor layer 20055, the conductor layer 20065, the vias 30165, the connecting portion 80055a, the connecting portion 80055b, the cutout 41155a, the cutout 41255a, the cutout 41155b, and the cutout 41255b. In the strip line-waveguide converter 90025, a dielectric waveguide part, which is formed of the vias 30165, the conductor layer 20055, and the conductor layer 20065 in the planar direction of the multilayer dielectric substrate 10015 to form the back-short waveguide, is formed so that a part from the connecting portion 80055a to the connecting portion 80055b has a length corresponding to half wavelength of a guide wavelength of the back-short waveguide. The center of the back-short waveguide corresponds to ¼ wavelength from the connecting portion 80055a and the connecting portion 80055b. When equal-amplitude and reverse-phase signals are propagated from both sides of the back-short waveguide, a virtual short-circuit surface 93015 is obtained.
In the laminating direction of the multilayer dielectric substrate 10015, a dielectric waveguide 91015 is formed of the conductor layer 20025, the conductor layer 20035, the conductor layer 20045, the conductor layer 20055, the vias 30165, the vias 30145, the vias 30345, the aperture 40035, and the aperture 40045.
The strip line-waveguide converter 90015 and the strip line-waveguide converter 90025 are electromagnetically connected to each other via the dielectric waveguide 91015.
In the example of
The present invention includes an array antenna device including the dielectric filters according to each embodiment described above.
In a path connecting between one element antenna and one high-frequency component or one high-frequency circuit, a dielectric filter is required to be provided for each path. In view of this, when each element antenna in the element antenna region EAA is connected to the high-frequency circuit or the high-frequency component in the high-frequency device mounting region HFDA, the element antenna is connected via the dielectric filter in the dielectric filter mounting region DFA. In the array antenna device according to the present invention, an area to be occupied by each dielectric filter is decreased as described above, and hence an area to be occupied by the dielectric filter mounting region DFA can be decreased. As a result, the entire array antenna device can be downsized. Further, each dielectric filter can perform signal conversion with low loss, and hence a high-performance array antenna device can be provided.
The present invention is not limited to the above-mentioned embodiments, and includes a possible combination of the embodiments, a possible modification of any components of the embodiments, and possible omission of any components in the embodiments.
Further, as the conductor layers, the dielectric filter according to the present invention is only required to include at least four conductor layers, specifically, two conductor layers serving as short-circuit surfaces on both sides, and two conductor layers having the strip lines.
For example, the modification in each of the two strip line-waveguide converters and the two probes in the embodiments described above may be made in at least one of the two strip line-waveguide converters or at least one of the two probes.
1001, 10010, 10011, 10012, 10022, 10013, 10014, 10015 multilayer dielectric substrate; 2001, 2002, 2003, 2004, 2005, 2006, 2007, 2008, 20010, 20020, 20030, 20040, 20050, 20060, 20070, 20080, 20090, 20100, 20110, 20011, 20021, 20031, 20041, 20051, 20061, 20071, 20081, 20091, 20101, 20012, 20022, 20032, 20042, 20052, 20062, 20072, 20082, 20092, 20102, 20013, 20023, 20033, 20043, 20053, 20063, 20014, 20024, 20034, 20044, 20054, 20064, 20074, 20084, 20015, 20025, 20035, 20045, 30055, 20065 conductor layer; 21060 conductor pattern; 3018, 3024, 3057, 3118, 3124, 3157, 31110, 30240, 30570, 38100, 30151, 30241, 36101, 30791, 86101a, 86101b, 30152, 30242, 36102, 30792, 30163, 30343, 30154, 30184, 30145, 30165, 30345, 86102a, 86102b via, 4002, 4003, 4004, 4005, 4006, 4007, 4102, 4107, 4104, 4105, 4202, 4302, 40020, 40030, 40040, 40050, 40060, 40070, 40080, 40090, 40100, 40021, 40031, 40041, 40051, 40061, 40071, 40081, 40091, 40022, 40032, 40042, 40052, 40062, 40072, 40082, 40092, 40033, 40043, 40024, 40034, 40044, 40054, 40035, 40045 aperture; 41061a, 41061b, 41062a, 41062b, 41123, 41223, 41153, 41253, 41164, 41264, 41125, 41225, 41155a, 41155b, 41255a, 41255b cutout; 5003, 5006, 5103, 5106, 5206, 5303, 5306, 50030, 50090, 50031, 50081, 50032, 50082 probe; 6003, 6006, 60030, 60090, 60031, 60081, 60032, 60082, 60023, 60053, 60034, 60064, 60025, 60055a, 60055b strip line; 70061a, 70061b, 70071a, 70071b, 70062a, 70062b, 70072a, 70072b choke path; 80023, 80053, 80064, 80025, 80055a, 80055b connecting portion; 9001, 9002, 9011, 9012, 9021, 9022, 9031, 9032, 9051, 9061, 90010, 90020, 90011, 90021, 90012, 90022, 90013, 90023, 90014, 90024, 90015, 90025 strip line-waveguide converter; 9101, 9111, 9121, 9141, 91010, 91011, 91012, 91022, 91013, 91014, 91015 dielectric waveguide; 5403, 5406, 31570, 32570 resonance conductor; 92010 resonance space; 93015 virtual short-circuit surface; AAD array antenna device; EAA element antenna region; HFDA high-frequency device mounting region; DFA dielectric filter mounting region
| Number | Date | Country | Kind |
|---|---|---|---|
| PCT/JP2017/033097 | Sep 2017 | WO | international |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2018/021853 | 6/7/2018 | WO | 00 |
| Publishing Document | Publishing Date | Country | Kind |
|---|---|---|---|
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