Claims
- 1. A dielectric optical waveguide device comprising:
- a dielectric substrate;
- a pair of optical waveguides formed in said substrate;
- an insulating buffer layer provided on said substrate;
- a semiconductor film provided on said buffer layer;
- a pair of metal electrodes arranged in spaced relationship from each other so as to correspond to said optical waveguides formed in said substrate; and
- a diffusion suppressing layer provided so as to be interposed between said semiconductor film and said electrodes, said diffusion suppressing layer being formed of insulating material having a diffusion constant on a solid-phase alloying reaction with said electrodes smaller than a diffusion constant on a solid-phase alloying reaction between said electrodes and said semiconductor film.
- 2. A dielectric optical waveguide device according to claim 1, wherein said substrate is formed of lithium niobate (LiNbO.sub.3).
- 3. A dielectric optical waveguide device according to claim 1, wherein said semiconducting film is formed of silicon (Si), and said electrodes are formed of gold (Au).
- 4. A dielectric optical waveguide device according to claim 3, wherein said diffusion suppressing layer is formed of silicon dioxide (SiO.sub.2).
- 5. A dielectric optical waveguide device according to claim 4, wherein said buffer layer is formed of silicon dioxide (SiO.sub.2).
- 6. A dielectric optical waveguide device according to claim 5, wherein a thickness of said diffusion suppressing layer is smaller than a thickness of said buffer layer.
- 7. A dielectric optical waveguide device comprising:
- a dielectric substrate;
- an optical waveguide formed in said substrate;
- an insulating buffer layer provided on said substrate;
- a semiconductor film provided on said buffer layer;
- an electrode disposed adjacent to said optical waveguide, said electrode applying an electric field to light propagating through said optical waveguide; and
- a diffusion suppressing layer provided between said semiconductor film and said electrode, said diffusion suppressing layer having a diffusion constant on a solid-phase alloying reaction with said electrode smaller than a diffusion constant on a solid-phase alloying reaction between said electrode and said semiconductor film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-231496 |
Sep 1993 |
JPX |
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Parent Case Info
This application is a division of application Ser. No. 08/190,478, filed Feb. 2, 1994, now allowed (U.S. Pat. No. 5,473,711).
US Referenced Citations (5)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0444959 |
Sep 1991 |
EPX |
1210928 |
Aug 1989 |
JPX |
1302325 |
Dec 1989 |
JPX |
Non-Patent Literature Citations (1)
Entry |
15th European Conference on Optical Communication, Sep. 1989, vol. 1, pp. 421-424. |
Divisions (1)
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Number |
Date |
Country |
Parent |
190478 |
Feb 1994 |
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