The present invention relates generally to a dielectric resonator antenna, and, in particular embodiments, to a microstrip antenna comprising a superstrate.
Microstrip antennas are popular and widely used. They offer attractive features such as low weight, small size, low profile, ease of fabrication, and ease of integration with active components.
In accordance with an embodiment of the present invention a dielectric antenna element for emitting or receiving radio frequencies comprises a substrate, a microstrip element supported by the substrate, and at least one first dielectric superstrate disposed over the substrate and spaced apart from the substrate, wherein the at least one superstrate comprises a permittivity between 2 and 10.
In accordance with an embodiment of the present invention a dielectric antenna element for emitting or receiving radio frequencies comprises a substrate, a microstrip element supported by the substrate, and at least one first dielectric superstrate disposed over the substrate and spaced apart from the substrate, wherein the at least one first superstrate comprises a thickness that is substantially a non-zero integer multiple of λ3/2, and wherein the at least one first superstrate is spaced apart from the substrate by a distance t2, and wherein the distance t2 is substantially a non-zero integer multiple of λ2/2 but not λ2/4+a non-zero integer multiple of λ2/2.
In accordance with an embodiment of the present invention a device comprises a dielectric antenna element for emitting or receiving radio frequencies, wherein the dielectric antenna element comprises a substrate, a microstrip element supported by the substrate, and at least one dielectric superstrate disposed over the substrate and spaced apart from the substrate, wherein the at least one superstrate comprises a permittivity between 2 and 10.
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
One of the major disadvantages usually associated with printed antennas is low gain. The gain of a typical Hertzian dipole on a grounded substrate is about 6 dB. Even though printed antennas have recently been improved by adding a superstrate they still lack high gain over a broad bandwidth. The improved antennas include a superstrate with ε>>1 (typically ε=10 and higher) and/or μ>>1 (typically μ=10 and higher) over a substrate. The gain varies proportionally to either ε or μ. However, the gain varies inversely with the bandwidth and for practical antenna operation reasons a gain limit needs to be established for a reasonable broad bandwidth.
Prior art documents teach that the distance between the superstrate and the substrate should be a quarter wavelength and the distance between the ground and the superstrate should be half a wavelength in order to provide resonance conditions for a high gain. The relation between the two distances, however, is complex.
Embodiments of the present application provide improved resonance gain over a wide bandwidth. Further embodiments provide a dielectric superstrate (or dielectric layer) disposed or stacked over a microstrip element, wherein the dielectric superstrate has a permittivity of less than 10. The dielectric superstrate is part of the antenna. Different thicknesses and permittivities of the dielectric superstrate have significant effects on antenna efficiency and gain. Other embodiments provide antenna efficiency and gain improvements by stacking the dielectric superstrate at a selected distance from the microstrip element supported by the substrate.
An advantage for these arrangements may be that the gain of the antenna can be increased without increasing the size and the footprint of a planar structure and therefore the board. The dielectric superstrate may act as a lens concentrating the emitted radio frequency and increasing the gain.
A spacer layer of air or foam 12 is located between the board 11 and superstrate plate or dielectric slab 13. The dielectric superstrate 13 may be fixed or attached to the board 11 via support structures (not shown). In other embodiments, when foam is disposed between the board 11 and the dielectric superstrate plate 13 the spacer layer 12 may not comprise support structures.
The dielectric superstrate 13 may be connected to the board 11 via spacer layer 12 comprising insulating supporters such as plastic supporters. The plastic supporters may be nylon screws comprising adjustment members such as nylon nuts to adjust the superstrate 13 relative to the board 11. The dielectric superstrate 13 may be connected to the board 11 via pins or other spacers. The pins or spacers may be fixed to the dielectric superstrate 13 and the board 11 by an adhesive material such as an adhesive paste or adhesive tape. Alternatively, the dielectric superstrate 13 may include the integral insulating supporters such as spacers made from the same material and/or the same process as the dielectric superstrate 13.
The insulating supporters may be arranged around the edge of the antenna array 10 or on the corners of the antenna array 10. In alternative embodiments, the insulating supporters may be arranged in the array 10 (e.g., between the antenna elements) and/or around the edge of the antenna array 10. In some embodiments, the dielectric superstrate 13 is formed as a housing having a hollow space.
In some embodiments the antenna array 10 is configured to operate with frequencies in the range of 10 GHz to 720 GHz. In other embodiments the antenna array 10 may operate with frequencies in the range of 10 GHz to 80 GHz or alternatively, with frequencies between 50 GHz and 70 GHz. In yet alternative embodiments, the antenna array 10 may operate in the range between 10 GHz and 30 GHz.
An advantage of the antenna array 10 is that it combines high gain with broad pass band performance. Furthermore, the antenna array 10 shows excellent front-to-back ratio levels, optimal cross polarization levels, outstanding impedance matching levels and other impressive performance levels. As a result the gain is much higher over a broader band of frequencies compared to conventional arrangements of dielectric antennas.
By using an antenna element 150 supported by a substrate 110 and a dielectric superstrate 130 with an appropriate permittivity ε3 (e.g., ε3 between 2 and 3) and changing the distance t2 between them, resonance condition can be satisfied and a high gain can be obtained. The value of the resonant gain is a function of the thickness t3 of the superstrate 130 and the thickness t2 of the spacer layer (or the distance between the board 110 and the superstrate 130). Some embodiments of the invention may show that the optimal distance t2 is about λ0/2 and the optimal distance t3 is about λg/2).
The substrate 110 may be a circuit board or printed circuit board. The board 110 may comprise a dielectric substrate with a permittivity of ε1. The board 110 may include a ground plane 160 located on the back side of the board 110 while the antenna element 150 is located on the front side of the board 110. Alternatively, the ground plane 160 may be located within the board 110 or laterally adjacent to the antenna element 150. The ground plane 160 comprises a conductive material such as a metal (e.g., aluminum, copper, or alloys thereof). The board 110 has a thickness of t1 without the ground plane 160. In some embodiments the thickness t1 may be 0.2 mm to 5 mm, more particularly, 0.2 mm to 2 mm, alternatively 0.5 mm.
The antenna element 150 may be a planar antenna element or a quasi-planar antenna element. The antenna element 150 may be a microstrip. The microstrip can be a rectangular patch, a ring patch or an elliptical patch. The antenna element 150 can be a dipole such as a Yagi antenna or an aperture antenna. The antenna element 150 may be embedded in the board 110 or disposed on the board 110. The antenna element may comprise a thickness of 1 μm-50 μm or 15 μm-30 μm.
The spacer layer 120 comprising air, foam or a combination of air and foam, separates the board 110 from the dielectric superstrate 130. The spacer layer 120 comprising air has a permittivity ε2 of about 1 and the spacer layer 120 comprising foam has a permittivity of ε2 close to 1, e.g., between 1 and 1.6.
The spacer layer 120 may have a thickness t2. For optimal gain the thickness t2 may be selected for a selected frequency or a frequency range according to the equation provided below. In some embodiments the thickness t2 of the spacer layer 120 may be between 1 mm and 10 mm.
The dielectric superstrate 130 comprises a dielectric material. Depending on the design and application of the antenna element the dielectric material can be selected having different permittivities ε3. The permittivity ε3 may be about 3 (e.g., ε3=2.9) or between 2 and 3. In some embodiments the permittivity ε3 is between 2 and 10, between 2 and 8, or alternatively, between 2 and 5. Even though the gains for different permittivities ε3 of the dielectric superstrate 130 are similar, the lower permittivities promise higher gains than the higher permittivities as can be gathered from
The dielectric superstrate 130 may an insulating material. The insulating material may be Teflon, ceramic, silicon, nylon, glass, quartz or a combination of these materials. In an embodiment the insulating material may be RT/Duroid® 6002 from Rogers Corporation.
In some embodiment the dielectric superstrate 130 comprises a plurality of dielectric layers. The plurality of dielectric layers may comprise layers with the same permittivity or layers with different permittivities. In one embodiment the layer with the higher permittivity faces the board 110 and in another embodiment the layer with the higher permittivity faces away from the board.
Moreover, the dielectric superstrate 130 may comprise a thickness t3.
wherein n is a non-zero integer number.
Accordingly, a high gain over a broad bandwidth can be achieved when the thickness t3 of the dielectric superstrate 130 is set to:
For an optimal gain over a wide bandwidth the dielectric superstrate thickness t3 may be set to n=1 and therefore substantially λg/2. Substantially λg/2 means +/−5% or less of λg/2 and substantially a non-zero integer multiple of λg/2 means +/−5% or less of the non-zero integer multiple of λg/2. In some embodiments the dielectric superstrate thickness t3 may be 1 mm to 10 mm, or more particularly, 1 mm to 2 mm, alternatively 1.5 mm.
For an excellent gain, another resonance condition may be fulfilled by setting the distance t2 to an adequate position. The position of the dielectric superstrate 130 relative to the board 110 may be set according to the following equation:
In this equation λ2 is the wavelength (free space λ0 if air is used) in the spacer layer and n is an integer number.
The thickness t2 may therefore be optimized for λ2/2 and not for λ2/4 as suggested for conventional antenna devices. In some embodiments, the thicknesses t2 is substantially a non-zero integer multiple of λ2/2 but not λ2/4+a non-zero integer multiple of λ2/2, e.g., proportional to λ2/4, 3λ2/4 or 5λ2/4 etc. In some embodiments, the thickness t3 of the dielectric superstrate for a frequency band may be selected such that wavelength in the superstrate 130 λg is the middle wavelength of the frequency band and/or the thickness t2 of the spacer layer 120 may be selected such that the wavelength in the spacer layer λ2 is the middle wavelength of that band. For example, the thickness t3 of the superstrate 130 for the frequency band 50 GHz-70 GHz (the middle frequency being 60 GHz) is about 2.9 mm (for a superstrate with a permittivity ε3 of 2.9) and the thickness t2 of the spacer 120 layer is about 5 mm. Similarly, the thickness t3 for the superstrate 130 for the band 71 GHz-76 GHz is about 2.4 mm (with a permittivity ε3 of 2.9) and the thickness t2 of the spacer layer 120 is about 4 mm. Moreover, the thickness t3 of the superstrate for the band 81 GHz-86 GHz is 2 about mm (with a permittivity of ε3 of 2.9) and the thickness t2 of the spacer layer 120 is about 3.6 mm. Finally, the thickness t3 of the superstrate 130 for the band 92 GHz-95 GHz is about 1.9 mm (with a permittivity of ε3 of 2.9) and the thickness t2 of the spacer layer 120 is about 3.2 mm.
The antenna element 200 comprising a board 210, a first dielectric superstrate 230 having an appropriate first thickness t3 and an appropriate first permittivity ε3 (e.g., ε3 between 2 to 3), a second dielectric superstrate 250 having an appropriate second thickness t5 and an appropriate second permittivity ε5 (e.g., ε5 between 2 to 3), and appropriate distances t2 and t4 of the first and second spacer layers 220, 240 can satisfy a high gain over a broad bandwidth. The value of the resonant gain and the width of the pass band are a function of the thicknesses t3 and t5 of the superstrates 230, 250 and the thickness t2 and t4 of the spacer layers 220, 240.
An advantage of such an arrangement is that the gain of a dielectric antenna with two lenses may be even higher than the gain of a dielectric antenna with a single lens. Moreover, a further advantage is that the 3 dB beamwidth of the radiation pattern may be even smaller. This can be seen in
Embodiments of the invention may provide dielectric antennas with three or more dielectric superstrates.
Embodiment of the invention may be applied to automotive applications such as automotive radar or telecommunication applications such as transceiver applications in base stations or user equipment (e.g., hand held devices).
While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments.