Dielectric resonator device having resonator electrodes with gaps

Abstract

A dielectric resonator device in which resonant electrodes are provided in or on a dielectric block, and another ground electrode is formed on an outer face of the dielectric block. Lengths of the resonant electrodes are determined according to desired resonance frequencies of the respective resonators, while widths of gap regions in the through-holes having no electrodes are determined according to the desired amounts of coupling between the respective resonators. Since the dielectric block may be standardized, various kinds of dielectric resonator devices having different characteristics can be obtained without increasing the required numbers of kinds of molding metal molds.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a dielectric resonator arrangement, and more particularly, to a dielectric resonator device constructed by forming a plurality of resonator electrodes on a dielectric substrate or dielectric block.

2. Description of Related Art

Conventionally, there have been employed a multi-stage dielectric resonator device constituted by forming a plurality of resonance electrodes (inner electrodes) within a dielectric block, and a ground electrode over the outer face of said dielectric block, and a strip-line type multi-stage resonator device having a plurality of resonance electrodes formed on the surface of a dielectric substrate, and a ground electrode formed on a confronting surface of said dielectric substrate, for example, as a band-pass filter, etc. in a microwave band region.

In the dielectric resonator device having a plurality of inner electrodes formed within the dielectric block, coupling bores or holes are formed to achieve coupling among respective resonators for setting of the amount of coupling by the size of such coupling bores. However, in this type of the resonator device in which the coupling bores are to be provided, not only is the productivity low in the manufacture of the device, but it has been difficult to adjust the coupling amount properly.

Therefore, it has been considered to control resonator characteristics by adjusting the range over which the inner electrodes are formed as shown in FIG. 4 (A), which is a top plan view of a conventional dielectric resonator device, and FIG. 4 (B) representing a side sectional view taken along the line IV(B)—IV(B) in FIG. 4 (A).

In FIGS. 4 (A) and 4 (B), the known resonator device, for example, in the form of a symmetrical 4 stage band-pass filter, includes a dielectric block 1 ′ with four through-holes formed therein, and inner electrodes 2 a ′, 2 b ′, 2 c ′ and 2 d ′ formed on the inner peripheral surfaces of said through-holes. The dielectric resonator device as referred to above may be represented by an equivalent circuit as shown in FIG. 5 , in which R 1 , R 2 , R 3 and R 4 denote the resonators formed by the inner electrodes 2 a ′, 2 b ′, 2 c ′ and 2 d ′ as shown in FIGS. 4 (A) and 4 (B), with symbols K 1 and K 2 representing the coupling amounts between the respective neighboring resonators. In the dielectric resonator device having the construction as illustrated in FIGS. 4 (A) and 4 (B), for example, the resonance frequency of the resonator R 2 is determined by a length L 2 ′ of the inner electrode 2 b ′ at a second stage, while the coupling amount K 2 is determined by a length S 2 ′ of a region in which the inner electrode is not formed, and an interval P 2 ′ between the inner electrodes 2 b ′- 2 c′.

When a filter is to be designed in which the relations represented by f 1 >f 2 and K 1 >K 2 are true on the assumption that the dielectric resonator device shown in FIGS. 4 (A) and 4 (B) is constructed as the symmetrical 4 stage band-pass filter, and the resonance frequencies of the resonators R 1 and R 4 are represented by f 1 , and those of the resonators R 2 and R 3 , by f 2 , the procedure for the design will be as follows.

(i) To determine the length L 2 ′ of the inner electrodes 2 b ′ and 2 c ′ according to the resonance frequencies f 2 .

(ii) To determine the length S 2 ′ of the region without the inner electrode and/or the intervals P 2 ′ between the inner electrodes 2 b - 2 c ′ according to the coupling amount K 2 , with consequent determination of the axial length L thereby.

(iii) To determine the length L 1 ′ of the inner electrodes 2 a ′ and 2 b ′ according to the resonance frequency f 1 , with consequent determination of S 1 ′.

(iv) To determine the interval P 1 ′ between the inner electrodes 2 a ′- 2 b ′ and 2 c ′- 2 d ′ according to the coupling amount K 1 .

Although the symmetrical 4 stage band-pass filter may be designed in the manner as described above, since the interval P 1 ′ and P 2 ′ between the inner electrodes are not constant according to the filter characteristics aimed at, different metal molds are required for each kind of filter, thus resulting in high manufacturing cost.

SUMMARY OF THE INVENTION

Accordingly, an essential object of the present invention is to provide a dielectric resonator device constituted by providing resonance electrodes on a dielectric member, which is arranged to obtain necessary characteristics without changing intervals between the neighboring resonance electrodes.

Another object of the present invention is to provide the dielectric resonator device of the above described type in many kinds which are different in characteristics without increasing the number of molding metal molds required for manufacturing thereof.

A further object of the present invention is to provide a method of manufacturing the dielectric resonator device of the above described type in an efficient manner at low cost.

In accomplishing these and other objects, according to the present invention, there are provided the dielectric resonator device and the method of manufacturing said dielectric resonator device characterized in the points as follows.

STRUCTURAL ASPECTS

A dielectric resonator device according to a first aspect of the present invention is characterized in that it includes a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, an outer electrode formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes formed, through gaps, at least in the vicinity of opening portions at one side, on inner peripheral surfaces of said through-holes.

A dielectric resonator device according to a second aspect of the present invention is characterized in that it includes a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces and through-holes extending from the first face to the second face through the dielectric block, an outer electrode formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes formed, through gaps, in the vicinity of opening portions of said first face, on inner peripheral surfaces of said through-holes.

A method of manufacturing a dielectric resonator device according to a third aspect of the present invention is characterized in that it includes the steps of forming a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, applying, through formation, an outer conductor film onto said first face, second face and side faces of said dielectric block, and also, applying, through formation, first inner conductor films and second inner conductor films through gaps, at least in the vicinity of opening portions at one side, onto inner peripheral surfaces of said through-holes.

A method of manufacturing a dielectric resonator device according to a fourth aspect of the present invention is characterized in that it includes the steps of forming a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, applying, through formation, an outer conductor film onto said first face, second face and side faces of said dielectric block, and also, applying, through formation, first-inner conductor films and second inner conductor films through gaps, in the vicinity of opening portions of said first face, onto inner peripheral surfaces of said through-holes.

The method of manufacturing a dielectric resonator device according to a fifth aspect of the present invention is characterized in that in the method according to the third or fourth aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator characteristics by differentiating positions of the gaps within the respective through-holes.

The method of manufacturing a dielectric resonator device according to a sixth aspect of the present invention is characterized in that in the method according to the third or forth aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator characteristic by differentiating widths of the gaps within the respective through-holes.

The method of manufacturing a dielectric resonator device according to a seventh aspect of the present invention is characterized in that in the method according to the third of fourth aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator characteristic by differentiating positions and widths of the gaps within the respective through-holes.

A dielectric resonator device according to an eighth aspect of the present invention is characterized in that it includes a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces and through-holes extending from the first face to the second face through the dielectric block, an outer electrode formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes respectively formed, through gaps, at least in the vicinity of opening portions at one side on inner peripheral surfaces of said respective through-holes.

A dielectric resonator device according to a ninth aspect of the present invention is characterized in that it includes a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces and through-holes extending from the first face to the second face through the dielectric block, an outer electrode formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes respectively formed, through gaps, in the vicinity of opening portions of said first face, on inner peripheral surfaces of said respective through-holes.

A method of manufacturing a dielectric resonator device according to a tenth aspect of the present invention is characterized in that it includes the steps of forming a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, applying, through formation, an outer conductor film onto said first face, second face and side faces of said dielectric block, and also, applying, through formation, first inner conductor films and second inner conductor films through gaps, at least in the vicinity of opening portions at one side, onto inner peripheral surfaces of said respective through-holes.

A method of manufacturing a dielectric resonator device according to an eleventh aspect of the present invention is characterized in that it includes the steps of forming a dielectric block having a first face and a second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, applying, through formation, an outer conductor film onto said first face, second face and side faces of said dielectric block, and also, applying, through formation, first inner conductor films and second inner conductor films through gaps, in the vicinity of opening portions of said first face, onto inner peripheral surfaces of said respective through-holes.

The method of manufacturing a dielectric resonator device according to a twelfth aspect of the present invention is characterized in that in a method according to the tenth or eleventh aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator device characteristics by differentiating positions of the gaps within the respective through-holes.

The method of manufacturing a dielectric resonator device according to a thirteenth aspect of the present invention is characterized in that in a method according to the tenth or eleventh aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator device characteristics by differentiating widths of the gaps within the respective through-holes.

The method of manufacturing a dielectric resonator device according to a fourteenth aspect of the present invention is characterized in that in a method according to the tenth or eleventh aspect, said dielectric block is formed through employment of common molding metal molds, thereby to produce dielectric resonator devices having various resonator device characteristics by differentiating positions and widths of the gaps within the respective through-holes.

A dielectric resonator device according to a fifteenth aspect of the present invention is characterized in that it includes a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, with the resonance electrodes being conductively connected to said ground electrode in the vicinity of an edge portion at one side of said dielectric substrate, and auxiliary electrodes conductively connected to said ground electrode and extending from the other edge portion of said dielectric substrate which confronts said one edge portion thereof, toward positions near open ends of said resonance electrodes.

A dielectric resonator device according to a sixteenth aspect of the present invention is characterized in that it includes a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said resonance electrodes being adapted to be open at opposite ends thereof, and auxiliary electrodes conductively connected to said ground electrode and extending from two opposed edge portions of said dielectric substrate toward positions near open ends of said resonance electrodes.

A method of manufacturing a dielectric resonator device according to a seventeenth aspect of the present invention is characterized in that it includes the steps of forming a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said resonance electrodes being conductively connected to said ground electrode in the vicinity of an edge portion at one side of said dielectric substrate, and also, forming auxiliary electrodes conductively connected to said ground electrode and extending from the other edge portion of said dielectric substrate which confronts said one edge portion thereof, toward positions near open ends of said resonance electrodes.

A method of manufacturing a dielectric resonator device according to an eighteenth aspect of the present invention is characterized in that it includes the steps of forming a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said resonance electrodes being adapted to be open at opposite ends thereof, and also forming auxiliary electrodes conductively connected to said ground electrode and extending from two opposed edge portions of said dielectric substrate toward positions near open ends of said resonance electrodes.

The method of manufacturing a dielectric resonator device according to a nineteenth aspect of the present invention is characterized in that in the method according to the seventeenth or eighteenth aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating positions of gaps between said resonance electrodes and said auxiliary electrodes.

The method of manufacturing a dielectric resonator device according to a twentieth aspect of the present invention is characterized in that in the method according to the seventeenth or eighteenth aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating widths of gaps between said resonance electrodes and said auxiliary electrodes.

The method of manufacturing a dielectric resonator device according to a twenty-first aspect of the present invention is characterized in that in the method of manufacturing a dielectric resonator device according to the seventeenth or eighteenth aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating positions and widths of gaps between said resonance electrodes and said auxiliary electrodes.

A dielectric resonator device according to a twenty-second aspect of the present invention is characterized in that it includes a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said respective resonance electrodes being conductively connected to said ground electrode in the vicinity of an edge portion of said dielectric substrate, and auxiliary electrodes conducted to said ground electrode and extending from the other edge portion of said dielectric substrate, toward positions near open ends of said respective resonance electrodes respectively.

A dielectric resonator device according to a twenty-third aspect of the present invention is characterized in that it includes a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said respective resonance electrodes being adapted to be open at opposite ends thereof, and auxiliary electrodes conductively connected to said ground electrode and extending from two opposed edge portions of said dielectric substrate toward positions near open ends of said respective resonance electrodes respectively.

A method of manufacturing a dielectric resonator device according to a twenty-fourth aspect of the present invention is characterized in that it includes the steps of forming a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said respective resonance electrodes being conductively connected to said ground electrode in the vicinity of an edge portion of said dielectric substrate, and also, forming auxiliary electrodes conductively connected to said ground electrode and extending from the other edge portion of said dielectric substrate towards positions near open ends of said resonance electrodes respectively.

A method of manufacturing a dielectric resonator device according to a twenty-fifth aspect of the present invention is characterized in that it includes the steps of forming a dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface, said resonance electrodes being respectively adapted to be open at opposite ends thereof, and also forming auxiliary electrodes conductively connected to said ground electrode and extending from two opposed edge portions of said dielectric substrate, toward positions near open ends of said resonance electrodes respectively.

The method of manufacturing a dielectric resonator device according to a twenty-sixth aspect of the present invention is characterized in that in the method according to the twenty-fourth or twenty-fifth aspect, it is arranged to produce dielectric resonator devices having various resonator device characteristics by differentiating respective positions of gaps between said resonance electrodes and said auxiliary electrodes.

The method of manufacturing a dielectric resonator device according to a twenty-seventh aspect of the present invention is characterized in that in the method according to the twenty-fourth or twenty-fifth aspect, it is arranged to produce dielectric resonator devices having various resonator device characteristics by differentiating respective widths of gaps between said resonance electrodes and said auxiliary electrodes.

The method of manufacturing a dielectric resonator device according to a twenty-eigth aspect of the present invention is characterized in that in the method according to the twenty-fourth or twenty-fifth aspect, it is arranged to produce dielectric resonator devices having various resonator device characteristics by differentiating respective positions and respective widths of gaps between said resonance electrodes and said auxiliary electrodes.

FUNCTIONS

General functions of the dielectric resonator device and the method of manufacturing said dielectric resonator device according to the present invention as referred to above will be briefly explained hereinbelow.

In the above dielectric resonator device according to the first aspect, the dielectric block has the first face and the second face generally parallel to each other, the side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, while the outer electrode is formed over said first face, said second face, and said side faces of said dielectric block, and the first inner electrodes and second inner electrodes are formed, through gaps, at least in the vicinity of opening portions at one side, on the inner peripheral faces of said through-holes. As stated above, at least one side of the first and second inner electrodes formed in the inner peripheral face of the through-holes within the dielectric block acts as the resonance electrodes so as to function as TEM mode dielectric resonators.

In the above dielectric resonator device according to the second aspect, the dielectric block has the first face and the second face generally parallel to each other, the side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block, with the outer electrode is formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes are formed, through gaps, in the vicinity of opening portions of said first face, on inner peripheral faces of said through-holes. Of the first and second inner electrodes formed on the inner peripheral faces of the through-holes within the dielectric block, the inner electrodes at one side contiguous to the outer electrode on the second surface normally function as the TEM mode dielectric resonators which resonate at ¼ wavelength.

In the above method of manufacturing the dielectric resonator device according to the third aspect, the dielectric block having the first face and the second face generally parallel to each other, the side faces continuous between said first and second faces, and the through-holes extending from the first face to the second face through-the dielectric block is formed, and the outer conductor film is formed on said first face, second face and sides faces of said dielectric block, and further the first inner conductor films and second inner conductor films are formed through gaps, at least in the vicinity of opening portions at one side, ont inner peripheral faces of said through-holes. By the above method, the outer conductor film formed on the first face, the second face and the side faces act as the outer electrode, while the inner conductor films at least at one side of the first and second inner conductor films formed in the inner peripheral surfaces of the dielectric block function as the resonance electrodes.

In the above method of manufacturing the dielectric resonator device according to the fourth aspect, the dielectric block having a first face and second face generally parallel to each other, side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block is prepared, and the outer conductor film is formed on said first face, second face and side faces of said dielectric block, and also the first inner conductor films and second inner conductor films are formed through gaps, in the vicinity of opening portions of said first face, on the inner peripheral faces of said through-holes respectively. By the above method, the outer conductor film formed on the first face, the second face and the side faces act as the outer electrode, while the inner conductor films contiguous from the opening portion of the second face of the first and second inner conductor films formed on the inner peripheral surfaces of the dielectric block function as the resonance electrodes, and thus, the dielectric resonator device having the resonator length of ¼ wavelength is obtained.

In the above method of manufacturing the dielectric resonator device according to the fifth aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator characteristics are obtained by differentiating positions of the gaps within the respective through-holes. By the positions of the above gaps, the lengths of the inner conductor films at least at one side acting as the resonance electrodes are varied, whereby in spite of the use of the dielectric block formed by the common molding metal molds, the dielectric resonator device having the predetermined resonator characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the sixth aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator characteristics are obtained by differentiating widths of the gaps within the respective through-holes. By the size of the widths for the gaps, the capacity produced between the first and second inner electrodes is varied, whereby in spite of the use of the dielectric block formed by the common metal molds, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the seventh aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator characteristics are obtained by differentiating positions and widths of the gaps within the respective through-holes. By the positions of the above gaps, the lengths of the inner conductor films at least at one side acting as the resonator electrodes are varied, while, by the size of widths for the gaps, the capacity produced between the first and second inner electrodes is varied, whereby in spite of the use of the dielectric block formed by the common metal molds, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above dielectric resonator device according to the eigth aspect, the dielectric block has the first face and the second face generally parallel to each other, side faces continuous between said first and second faces, and the through-holes extending from the first face to the second face through the dielectric block, while the outer electrode is formed over said first face, said second face, and said side faces of said dielectric block, and first inner electrodes and second inner electrodes are respectively formed, through gaps, at least in the vicinity of opening portions at one side, on inner peripheral faces of said respective through-holes. As stated above, at least one side of the first and second inner electrodes formed in the inner peripheral face of the through-holes within the dielectric block acts as the resonance electrodes so as to function on the whole as TEM mode dielectric resonator device of a plurality of stages.

In the above dielectric resonator device according to the ninth aspect, the dielectric block has the first face and the second face generally parallel to each other, side faces continuous between said first and second faces and through-holes extending from the first face to the second face through the dielectric block, while outer electrode is formed over said first face, said second face, and said side faces of said dielectric block, and the first inner electrodes and second inner electrodes are respectively formed, through gaps, in the vicinity of opening portions of said first face, on the inner peripheral faces of said respective through-holes. Of the first and second inner electrodes formed on the inner peripheral faces of the through-holes within the dielectric block, the inner electrodes at one side contiguous to the outer electrode on the second surface normally function as the TEM mode dielectric resonator device of a comb-line type which resonate at ¼ wavelength respectively.

In the above method of manufacturing the dielectric resonator device according to the tenth aspect, the dielectric block having the first face and the second face generally parallel to each other, the side faces continuous between said first and second faces, and through-holes extending from the first face to the second face through the dielectric block is formed, and the outer conductor film is formed on said first face, second face and side faces of said dielectric block, and also, first inner conductor films and second inner conductor films are formed through gaps, at least in the vicinity of opening portions at one side, onto the inner peripheral faces of said respective through-holes. By the above method, the outer conductor film formed on the first face, the second face and the side faces act as the outer electrode, while the inner conductor films at least at one side of the first and second inner conductor films formed on the inner peripheral surfaces of the dielectric block function as the resonance electrodes, and thus, the dielectric resonator device of the plurality of stages may be obtained.

In the above method of manufacturing the dielectric resonator device according to the eleventh aspect, the dielectric block having the first face and the second face generally parallel to each other, side faces continuous between said fist and second faces, and the through-holes extending from the first face to the second face through the dielectric block is formed, and the outer conductor film is formed on said first face, second face and side faces of said dielectric block, and also, the first inner conductor films and second inner conductor films are formed through gaps, in the vicinity of opening portions of said first face, on the inner peripheral faces of said respective through-holes. By the above method, the outer conductor film formed on the first face, the second face and the side face act as the outer electrode, while the inner conductor films contiguous from the opening portion of the second face of the first and second inner conductor films formed on the inner peripheral surfaces of the dielectric block function as the resonance electrodes, and thus, the dielectric resonator device of a plurality of stages having the resonator length of ¼ wavelength is obtained.

In the above method of manufacturing the dielectric resonator device according to the twelfth aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator device characteristics are obtained by differentiating positions of the gaps within the respective through-holes. By the positions of the above gaps, the lengths of the inner conductor films at-least at one side acting as the resonance electrodes are varied, whereby in spite of the use of the dielectric block formed by the common molding metal molds, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the thirteenth aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator characteristics are obtained by differentiating widths of the gaps within the respective through-holes. By the size of the widths for the gaps, the capacity produced between the first and second inner electrodes is varied, whereby in spite of the use of the dielectric block formed by the common metal molds, the dielectric resonator device having the predetermined resonator device characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the fourteenth aspect, the dielectric block is formed through employment of common molding metal molds, and the dielectric resonator devices having various resonator device characteristics by differentiating positions and widths of the gaps within the respective through-holes. By the positions of the above gaps, the lengths of the inner conductor films at least at one side acting as the resonance electrodes are varied, while, by the size of the width for the gaps, the capacity produced between the first and second inner electrodes is varied, whereby in spite of the use of the dielectric block formed by the common metal molds, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above dielectric resonator device according to the fifteenth aspect, the dielectric substrate has resonance electrodes on its first main surface and a ground electrode on its second main surface, with the resonance electrodes being conducted to said ground electrode in the vicinity of an edge portion at one side of said dielectric substrate, and the auxiliary electrodes are conducted to said ground electrode and extending from the other edge portion of said dielectric substrate which confronts said one edge portion thereof, towards position near open ends of said resonance electrodes. By the above arrangement, the resonator device may be used as a strip-line resonator.

In the above dielectric resonator device according to the sixteenth aspect, the dielectric substrate has the resonance electrodes on its first main surface and the ground electrode on its second main surface, with the resonance electrodes being adapted to be open at opposite ends thereof, and the auxiliary electrodes are conducted to said ground electrodes and extending from opposed two edge portions of said dielectric substrate towards position near open ends of said resonance electrodes. By the above structure, the resonator device can be used as a strip-line resonator.

In the above method of manufacturing the dielectric resonator device according to the seventeenth aspect, the dielectric substrate having the resonance electrodes on its first main surface and a ground electrode on its second main surface is formed, with the resonance electrodes being conducted to said ground electrode in the vicinity of an edge portion at one side of said dielectric substrate, and also, auxiliary electrodes are conducted to said ground electrode and extending form the other edge portion of said dielectric substrate which confronts said one edge portion thereof, towards position near open ends of said resonance electrodes, whereby the dielectric resonator device is produced.

In the above method of manufacturing the dielectric resonator device according to the eighteenth aspect, the dielectric substrate having the resonance electrodes on its first main surface and the ground electrode on its second main surface is formed, with the resonance electrodes being adapted to be open at opposite ends thereof, and also, auxiliary electrodes are conducted to said ground electrode and extending from opposed two edge portions of said dielectric substrate, towards position near open ends of said resonance electrodes, and thus, the dielectric resonator device is produced.

In the above method of manufacturing the dielectric resonator device according to the nineteenth aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating positions of gaps between said resonance electrodes and said auxiliary electrodes. By the positions of the above gaps, the lengths of the resonance electrodes are varied, whereby in spite of the use of the common dielectric substrates, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the twentieth aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating widths of gaps between said resonance electrodes and said auxiliary electrodes. By the widths for the gaps, the capacity produced between the resonance electrode and auxiliary electrodes is varied, whereby in spite of the use of the common dielectric substrate, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the above method of manufacturing the dielectric resonator device according to the twenty-first aspect, it is arranged to produce dielectric resonator devices having various resonator characteristics by differentiating positions and widths of gaps between said resonance electrodes and said auxiliary electrodes. By the positions of the above gaps, the lengths of the resonance electrodes are varied, while, by the size of the widths, the capacity produced between the resonance and auxiliary electrodes is varied, whereby in spite of the use of common dielectric substrate, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the dielectric resonator device according to the twenty-second aspect, the dielectric substrate has the resonance electrodes on its first main surface and a ground electrode on its second main surface, respective resonance electrodes being conducted to said ground electrode in the vicinity of an edge portion of said dielectric substrate, and the auxiliary electrodes are conducted to said ground electrode and extending from the other edge portion of said dielectric substrate towards position near open ends of said respective resonance electrodes respectively. By the above construction, the dielectric device may be used as a strip-line filter.

In the dielectric device according to the twenty-third aspect, the dielectric substrate has the resonance electrodes on its first main surface and a ground electrode on its second main surface, with the respective resonance electrodes being adapted to be open at opposite ends thereof, and the auxiliary electrodes are conducted to said ground electrodes are conducted to said ground electrode and extending from opposed two edge portions of said dielectric substrate towards position near open ends of said respective resonance electrodes respectively. The above construction makes it possible to use the resonator device for a strip-line filter.

In the method of manufacturing the dielectric resonator device according to the twenty-fourth aspect, the dielectric substrate having the resonance electrodes on its first main surface and the ground electrode on its second main surface is formed, with the respective resonance electrodes being conducted to said ground electrode in the vicinity of an edge portion of said dielectric substrate, and also, the auxiliary electrodes are conducted to said ground electrode and extending from the other edge portion of said dielectric substrate towards portion near open ends of said resonance electrodes respectively.

In the method of manufacturing the dielectric resonator device according to the twenty-fifth aspect, the dielectric substrate having resonance electrodes on its first main surface and a ground electrode on its second main surface is formed, with the resonance electrodes being respectively adapted to be open at opposite ends thereof, and the auxiliary electrodes are conducted to said ground electrode and extending from opposed two edge portions of said dielectric substrate towards position near open ends of said resonance electrodes respectively.

In the method of manufacturing the dielectric resonator device according to the twenty-sixth aspect, it is arranged to produce dielectric resonator devices having various resonator device characteristics by differentiating respective positions of gaps between said resonance electrodes and said auxiliary electrodes. By the positions of the above gaps, the lengths of the resonance electrodes are varied, whereby in spite of the use of the common dielectric substrate, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the method of manufacturing the dielectric resonator device according to the twenty-seventh aspect, it is arranged to produce dielectric resonator devices having various resonator device characteristics by differentiating respective widths of gaps between said resonance electrodes and said auxiliary electrodes. By the widths for the gaps, the capacity produced between the resonance electrode and auxiliary electrodes is varied, whereby in spite of the use of the common dielectric substrate the dielectric resonator device having the predetermined resonance characteristics may be obtained.

In the method of manufacturing the dielectric resonator device according to the twenty-eighth aspect, it is arranged to produce dielectric resonator devices having various resonator-device characteristics by differentiating respective positions and respective widths of gaps between said resonance electrodes and said auxiliary, electrodes. By the positions of the above gaps, the lengths of the resonance electrodes are varied, while by the size of the widths, the capacity produced between the resonance and auxiliary electrodes is varied, whereby in spite of the use of the common dielectric substrate, the dielectric resonator device having the predetermined resonance characteristics may be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects and features of the present invention will become apparent from the following description of the preferred embodiments thereof with reference to the accompanying drawings, in which;

FIG. 1 (A) is a front elevational view of a dielectric resonator device according to one preferred embodiment of the present invention,

FIG. 1 (B) is a cross section taken along the line I(B)—I(B) in FIG. 1 (A),

FIG. 2 is a perspective view of the dielectric resonator device of FIG. 1 (A),

FIG. 3 (A) is a top plan view of a dielectric resonator device according to a second embodiment of the present invention,

FIG. 3 (B) is a cross section taken along the line III(B)—III(B) in FIG. 3 (A),

FIG. 4 (A) is a front elevational view of a conventional dielectric resonator device (already referred to),

FIG. 4 (B) is a cross section taken along the line IV(B)—IV(B) in FIG. 4 (A) (already referred to),

FIG. 5 is an equivalent circuit diagram of a conventional symmetrical 4 stage band-pass filter, and

FIG. 6 is an equivalent circuit diagram of a 2 stage comb-line type filter.

DETAILED DESCRIPTION OF THE INVENTION

Before the description of the present invention proceeds, it is to be noted that like parts are designated by like reference numerals throughout the accompanying drawings.

FIRST EMBODIMENT

Referring now to the drawings, there is shown in FIGS. 1 (A), 1 (B) and 2 , a dielectric resonator device RA according to one preferred embodiment of the present invention, which generally includes a dielectric block 1 in the form of a hexahedron or in a rectangular cubic box-like configuration having a first face A and a second face B which are generally parallel to each other and side faces C, D, E and F contiguously provided between said first and second faces, four through-holes Ha, Hb, Hc and Hd formed to extend through the dielectric block 1 from the first face A to the second face B, first inner electrodes 2 a , 2 b , 2 c and 2 d and second inner electrodes 8 a , 8 b , 8 c and 8 d respectively formed on the inner peripheral surfaces of the respective through-holes Ha to Hd, and an outer electrode 3 formed on the first face A, the second face B, and the side faces C, D, E and F.

The dielectric block 1 is formed through employment of a common molding metal mold which serves as a standard (not particularly shown). Although the dielectric block to be obtained by the one metal mold has the same shape and same dimensions on the whole, including positions of the through-holes Ha to Hd, resonator devices having different resonator characteristics may be obtained by changing the lengths of the first inner electrodes 2 a to 2 d and the second inner electrodes 8 a to 8 d to be formed on the respective inner peripheral faces of said through-holes Ha to Hd. By way of example, it becomes possible to constitute a plurality of kinds of band-pass filters having different in center frequencies and band widths, etc. by the use of the dielectric block produced by that same common molding metal mold.

Referring now referring to FIG. 6 , showing an equivalent circuit diagram of a general 2 stage comb-line type filter, the factors determining the center frequencies and band widths of the filter will be explained.

In the first place, the center frequency fo is represented by an equation as follows from the resonance condition.

 2πfoCs=Ya·cot θo

θo={square root over (∈)}/C·2πfoL

where ∈r is a dielectric constant of a resonator surrounding substance, Cs is a straight capacity, L is a resonator length, Ya is admittance of the resonator, and C is a light velocity. Meanwhile, a coupling coefficient k is represented by a following equation, and is determined by each admittance and θ. $$ k = ( Yo - Ye ) / Ya 1 + θ 0 sin ⁢   ⁢ θ 0 · cos ⁢   ⁢ θ 0

where Yo is an admittance in the odd mode, and Ye is an admittance in the even mode.

Specific examples will now be described with reference to FIGS. 1 (A) and 1 (B).

In FIGS. 1 (A) and 1 (B), there is shown a dielectric resonator device RA according to one preferred embodiment of the present invention, which comprises a dielectric block 1 having a first face A and a second face B generally parallel to each other, side faces C, D, E, F which are continuous between the first and second faces A and B, and through-holes Ha, Hb, Hc and Hd extending from the first face A to the second face B through the dielectric block 1 , an outer electrode 3 formed over the first face A, the second face B, and the side faces of said dielectric block 1 , and first inner electrodes 2 a , 2 b , 2 c and 2 d and second inner electrodes 8 a , 8 b , 8 c , and 8 d formed, with gaps 7 a , 7 b , 7 c and 7 d therebetween at least in the vicinity of openings at one end, on inner peripheral faces of said through-holes Ha to Hd.

More specifically, the first inner electrodes 2 a , 2 b , 2 c , and 2 d , and the second inner electrodes 8 a , 8 b , 8 c , and 8 d are each formed on the inner peripheral faces of the respective through-holes Ha, Hb, Hc and Hd, with the gaps, i.e. non-electrode regions 7 a , 7 b , 7 c and 7 d , provided therebetween, and one end of each of the inner electrodes 2 a to 2 d and 8 a to 8 d is conductively connected conducted to the outer electrode 3 .

The first inner electrodes 2 a to 2 d act as resonance electrodes, with the first face A of the dielectric block 1 functioning as a short-circuiting face. Lengths of the first inner electrodes 2 a , 2 b , 2 c and 2 d are represented by L 1 , L 2 , L 3 and L 4 , and widths of the gaps 7 a , 7 b , 7 c and 7 d are denoted by S 1 , S 2 , S 3 and S 4 respectively. Meanwhile, the lengths of the respective sides of the dielectric block are represented by La, Lb and Lc, and the intervals between the respective inner electrodes are represented by P 1 between 2 a and 2 b , P 2 between 2 b and 2 c , and P 3 between 2 c and 2 d . Here, the relationship of the respective intervals may be set as P 1 =P 2 =P 3 or P 1 ≠P 2 ≠P 3 ≠P 1 .

Although the resonance frequency of each resonator is determined by various factors, in the embodiment as shown in FIGS. 1 (A) and 1 (B), the resonance frequency of the first resonator formed by the first inner electrode 2 a is determined by L 1 and S 1 , the resonance frequency of the second resonator formed by the first inner electrode 2 b is determined by L 2 and S 2 , the resonance frequency of the third resonator formed by the first inner electrode 2 c is determined by L 3 and S 3 , and further, the resonance frequency of the fourth resonator formed by the first inner electrode 2 d is determined by L 4 and S 4 . Meanwhile, the coupling amounts between the neighboring resonators are determined by P 1 , P 2 and P 3 , and S 1 , S 2 , S 3 and S 4 , and in this case, the intervals P 1 , P 2 and P 3 between the inner electrodes are set by the metal mold dimensions and are fixed.

The dielectric resonator device RA as shown in FIGS. 1 (A) and 1 (B) functions as a band-pass filter “F 1 ” having a center frequency of f 1 , and a band width of BW 1 , but in order to produce filters on a large scale, band-pass filters with different characteristics must be produced. By changing the dimensions of the first and second inner electrodes within the respective through-holes, while employing of dielectric blocks prepared with the same metal mold, such band-pass filters may be manufactured after designing in the manner as described hereinbelow.

Firstly, in the case where a band-pass filter “F 2 ” with the band width equal to BW 1 , and the center frequency of f 2 higher than f 1 (f 2 >f 1 ) is to be produced on a large scale, the length of the first inner electrode 2 a is set to be L 12 shorter than L 1 , that of the first inner electrode 2 b is set to be L 22 shorter than L 2 , that of the first inner electrode 2 c is set to be L 32 shorter than L 3 , and that of the first inner electrode 2 d is set to be L 42 shorter than L 4 . The widths S 1 , S 2 , S 3 and S 4 of the gaps 7 a to 7 d between the first inner electrodes 2 a to 2 d , and the second inner electrodes 8 a to 8 d , are set to be the same as in the case where the center frequency is f 1 in principle, and accordingly, the lengths of the second inner electrodes 8 a to 8 d are set to be longer than those in the case of the band-pass filter “F 1 ”. As described above, when the center frequency is higher, each length of the second inner electrodes 8 a to 8 d becomes generally longer. However, in the case where the center frequency f 2 of this filter “F 2 ” is spaced away from the center frequency f 1 of the filter “F 1 ” too far to neglect the variation in the pass-band width, the widths S 1 , S 2 , S 3 and S 4 of the gaps are slightly increased, with corresponding slight increase of the lengths L 12 , L 22 , L 32 , and L 42 of the first inner electrodes in design for manufacturing.

Then, for mass-production of the filter having the pass-band width narrower than BW 1 , with the center frequency set at f 2 , the widths S 1 , S 2 , S 3 and S 4 are each increased at the designing stage.

In the above case, if the influence over the resonance frequency of each resonator can not be neglected due to the alteration of the values for S 1 , S 2 , S 3 and S 4 , the values for the lengths L 12 , L 22 , L 32 and L 42 of the respective first inner electrodes are altered in the directions towards L 12 →L 1 , L 22 →L 2 , L 32 →L 3 , and L 42 →L 4 respectively, and simultaneously, the lengths of the second inner electrodes 8 a , 8 b , 8 c and 8 d are reduced by the amounts in which the lengths of the first inner electrodes L 12 , L 22 , L 32 and L 42 are increased respectively in the designing.

Conversely, for mass-production of the filter having the pass-band width wider than BW 1 , with the center frequency set at f 2 , the widths S 1 , S 2 , S 3 and S 4 are each reduced at the designing stage.

In the above case, if the influence over the resonance frequency of each resonator can not be neglected due to the alteration of the values for S 1 , S 2 , S 3 and S 4 , the values for the lengths L 12 , L 22 , L 32 and L 42 of the respective first inner electrodes are further reduced and simultaneously, the lengths of the second inner electrodes 8 a , 8 b , 8 c and 8 d are increased.

As described above, various kinds of filters as desired are manufactured on a large scale by determining the lengths of the first and second inner electrodes and the widths of the gaps at the stage of designing. It is to be noted here that the lengths of the respective electrodes and the widths of the gaps as referred to above may be set at the predetermined values by grinding the inner electrodes at the gap portions through employment of a grained stone.

In the case where a band-pass filter “F 3 ” with the band width equal to BW 1 , and the center frequency of f 3 lower than f 1 (f 3 <f 1 ) is to be produced on a large scale, the length of the first inner electrode 2 a is set to be L 13 longer than L 1 , that of the first inner electrode 2 b is set to be L 23 longer than L 2 , that of the first inner electrode 2 c is set to be L 33 longer than L 3 , and that of the first inner electrode 2 d is set to be L 43 longer than L 4 . The widths S 1 , S 2 , S 3 and S 4 of the gaps 7 a to 7 d between the first inner electrodes 2 a to 2 d , and the second inner electrodes 8 a to 8 d , are set to be the same as in the case where the center frequency is f 1 in principle, and accordingly the lengths of the second inner electrodes 8 a to 8 d are set to be shorter than those in the case of the band-pass filter “F 1 ”. As described above, when the center frequency is lower, each length of the second inner electrodes 8 a to 8 d becomes generally shorter. However, in the case where the center frequency f 3 of this filter “F 3 ” is spaced away from the center frequency f 1 of the filter “F 1 ” too far to neglect the variation in the pass-band width, the widths S 1 , S 2 , S 3 and S 4 of the gaps are slightly decreased, with corresponding slight decrease of the lengths L 13 , L 23 , L 33 , and L 43 of the first inner electrodes in design for manufacturing.

Then, for mass-production of the filter having the pass band width narrower than BW 1 , with the center frequency set at f 3 , the widths S 1 , S 2 , S 3 and S 4 are each increased at the designing stage.

In the above case, if the influence over the resonance frequency of each resonator can not be neglected due to the alteration of the values for S 1 , S 2 , S 3 and S 4 , the values for the lengths L 13 , L 23 , L 33 and L 43 of the respective first inner electrodes are further increased, and simultaneously, the lengths of the second inner electrodes 8 a , 8 b , 8 c and 8 d are reduced in the designing.

Conversely, for mass-production of the filter having the pass band width wider than BW 1 , with the center frequency set at f 3 , the widths S 1 , S 2 , S 3 and S 4 are each decreased at the designing stage. In the above case, if the influence over the resonance frequency of each resonator can not be neglected due to the alternation of the values for S 1 , S 2 , S 3 and S 4 , the values for the lengths L 13 , L 23 , L 33 and L 43 of the respective first inner electrodes are altered in the directions towards L 13 →L 1 , L 23 →L 2 , L 33 →L 3 , and L 43 →L 4 respectively, and simultaneously, the lengths of the second inner electrodes 8 a , 8 b , 8 c and 8 d are increased by the amounts in which the lengths of the first inner electrodes L 12 , L 22 , L 32 and L 42 are decreased respectively in the designing.

As described above, various kinds of filter as desired are manufactured on a large scale by determining the lengths of the first and second inner electrodes and the widths of the gaps at the stage of designing.

In the manner described so far, it may be so arranged to obtain the dimensional data for each part which will provide the desired characteristics at the stage of designing or trial production, and to carry out mass production on the basis of such data. However, even in the case where dielectric resonator devices differ in their resonance frequencies, etc. to so large an extent that they can not be constituted by a single common dielectric block, it may be, for example, so arranged to classify the resonance frequencies, etc. into ranks and then to use a common dielectric blocks for each rank.

Thus, it becomes possible to produce various band-pass filters having center frequencies and pass-band widths as desired with dielectric blocks formed through employment of common metal molds. This is made possible by the presence of the second inner electrodes 8 a , 8 b , 8 c and 8 d which are contiguous with the outer electrode 3 formed on the second surface B of the dielectric block shown in FIGS. 1 (A) and 1 (B), and this is the effect peculiar to the present invention which is not available with the conventional dielectric resonator device as shown in FIGS. 4 (A) and 4 (B). It is to be noted here that in the embodiment as shown in FIGS. 1 (A) and 1 (B), although input and output terminals for the signals are omitted in the drawings, known constructions disclosed, for example, in Japanese Patent Laid-Open Publications Tokkaisho Nos. 59-51606, 60-114004, or Japanese Utility Model Laid-Open Publications Jikkaisho No. 58-54102 or 63-181002 may be adopted.

It should be noted here that although in the dielectric resonator device RA according to the foregoing embodiment, the dielectric block in the hexahedron shape is employed, the concept of the present invention is not limited in its application to the dielectric block of such shape. Moreover, the dielectric block to be employed is not limited to those molded by one-piece molding, but may be one as disclosed, for example in Japanese Patent Publication Tokkohei No. 3-15841, in which two dielectric substrates are employed, and by joining these two dielectric substrates, through-holes are formed in the joined faces. In the first embodiment of FIGS. 1 (A) and 1 (B), although the present invention has been described as applied to the dielectric resonator device of the ¼ wavelength type, it may be so modified and applied to a dielectric resonator device in which the respective resonance electrodes resonate to ½ wavelength by providing spaces in at both open ends of the respective through-holes. Additionally, in the first embodiment, although the inner diameter of each through-hole is set to be constant in its axial direction, the shape of the through-hole may be modified, for example, into a tapered shape or stepped shape.

SECOND EMBODIMENT

Referring further to FIGS. 3 (A) and 3 (B), there is shown a dielectric resonator device RB according to a second embodiment of the present invention, which includes a dielectric substrate 4 having resonance electrodes 5 a , 5 b , 5 c and 5 d on its first main surface 4 a and a ground electrode 6 on its second main surface 4 b , with the resonance electrodes 5 a to 5 d being conductively connected to the ground electrode 6 in the vicinity of an edge portion at one side of said dielectric substrate 4 , and auxiliary electrodes 9 a , 9 b , 9 c and 9 d conductively connected to the ground electrode 5 and extending from the other edge portion of said dielectric substrate which confronts said one edge portion thereof, toward positions near open ends of said resonance electrodes 5 a to 5 d.

More specifically, the electrodes 5 a , 5 b , 5 c and 5 d and 9 a , 9 b , 9 c and 9 d are formed on the first main surface 4 a and non-electrode regions 7 a , 7 b , 7 c and 7 d are provided therebetween as shown. In these electrodes, the electrodes 5 a , 5 b , 5 c and 5 d function as strip lines forming the resonant electrodes, while the electrodes 9 a , 9 b , 9 c and 9 d act as the auxiliary electrodes. Moreover, the ground electrode 6 is extended from the second main face 4 b (i.e. the reverse face) of the dielectric substrate 4 towards the edge portion adjacent the short-circuited ends of the resonance electrodes 5 a , 5 b , 5 c and 5 d , and toward the edge portion adjacent the ends of the auxiliary electrodes 9 a , 9 b , 9 c an 9 d . By the above structure, the resonator device RB functions as the strip-line type dielectric resonator device, and can be used as the four stage band-pass filter. In this case also, the filter characteristics can be set by the length of the strip-line from the short-circuited end, and the length of the non-electrode portions 7 a , 7 b , 7 c and 7 d.

It is to be noted here that in the first and second embodiments as described so far, although the present invention has been described with reference to the comb-line type filter as one example, the concept of the present invention is not limited in its application to the above, but may be applied to a filter of an inter-digital type as well.

As is clear from the foregoing description, according to the present invention, various kinds of dielectric resonator devices having different characteristics may be readily obtained without increasing the kinds or variations of the dielectric blocks or dielectric substrates, with a marked reduction in the manufacturing cost.

Although the present invention has been fully described by way of example with reference to the accompanying drawings, it is to be noted here that various changes and modifications will be apparent to those skilled in the art. Therefore, unless otherwise such changes and modifications depart from the scope of the present invention, they should be construed as included therein.

Claims

1. A dielectric resonator device comprising:a dielectric block having a first face and a second face, at least one side face extending continuously between said first and second faces, and a plurality of through-holes extending from said first face to said second face through said dielectric block, each of said plurality of through-holes having substantially a constant diameter in an extending direction thereof; an outer electrode formed over said first face, said second face, and said side face of said dielectric block; and a first inner electrode and a second inner electrode respectively provided on an inner surface of each of said through-holes such that a gap exposing a portion of said inner surface is provided between said respective first inner electrode and second inner electrode, said gap being offset with respect to said second face, said first inner electrodes and said second inner electrodes being electrically connected with said outer electrode.

2. A dielectric resonator device according to claim 1, wherein each of said first electrodes functions as a resonator with an end thereof at said gap.

3. A dielectric resonator device according to claim 2, wherein each of said first electrodes functions as a quarter-wavelength resonator with an end thereof at said gap and the other end thereof at said first face of said dielectric block.

4. A dielectric resonator device according to claim 1, wherein said dielectric block has more than three of said through-holes.

5. A dielectric resonator device according to claim 4, wherein respective spacings between adjacent pairs of said through-holes are equal to each other.

6. A dielectric resonator device according to claim 4, wherein respective spacings between adjacent pairs of said through-holes are unequal to each other.

7. A dielectric resonator device according to claim 1, wherein said dielectric block comprises a dielectric ceramic material.

8. A dielectric resonator device comprising:a dielectric block having a first face and a second face, at least one side face extending continuously between said first and second faces, and a plurality of through-holes extending from said first face to said second face through said dielectric block; an outer electrode formed over said first face, said second face, and said side face of said dielectric block; and a first inner electrode and a second inner electrode respectively provided on an inner surface of each of said through-holes such that a gap exposing a portion of said inner surface is provided between said respective first inner electrode and second inner electrode, said gap being offset with respect to said second face, said first inner electrodes and said second inner electrodes being electrically connected with said outer electrode; wherein said inner surface at said gap is substantially flush with the remainder of said inner surface.

9. A dielectric resonator device according to claim 8, wherein each of said first electrodes functions as a resonator with an end thereof at said gap.

10. A dielectric resonator device according to claim 9, wherein each of said first electrodes functions as a quarter-wavelength resonator with an end thereof at said gap and the other end thereof at said first face of said dielectric block.

11. A dielectric resonator device according to claim 8, wherein said dielectric block has more than three of said through-holes.

12. A dielectric resonator device according to claim 11, wherein respective spacings between adjacent pairs of said through-holes are equal to each other.

13. A dielectric resonator device according to claim 11, wherein respective spacings between adjacent pairs of said through-holes are unequal to each other.

14. A dielectric resonator device according to claim 8, wherein said dielectric block comprises a dielectric ceramic material.