1. Field of the Invention
The present application relates to a differential circuit, in particular, a differential amplifier compensating undershoots appeared in outputs thereof.
2. Related Background Art
It has been known in the field that a differential circuit comprised of bipolar junction transistors (hereafter denoted as BJT) usually accompanies with under shoot in falling edges due to stray capacitors of the BJT. When such a differential circuit drives an optical modulator, the under shoot bring degraded optical output.
A Japanese Patent application published as JP-H08-102622A has disclosed a differential amplifier that suppresses undershoots.
However, an additional transistor Q5(Q6) is necessary in the conventional circuit shown in
One aspect of the present application relates to an amplifier with the differential configuration. The amplifier comprises a pair of switching transistors each driven complimentarily, a pair of load resistors each connected in series to the switching transistors, a pair of cascade transistors each connected in series to the switching transistors and put between the load resistors and the switching transistors, and a bias control. The bias control provides a base level of the cascade transistors that is higher than an output LOW level of the cascade transistors by an offset amount. The discharge current for the base-emitter junction diode of the switching transistors is provided from or absorbed in the bias control through the cascade transistors.
The bias control includes first and second current sources and a resistor. The first current source is connected in series to the resistor and provides a current corresponding to a maximum current flowing in the load resistors. The resistor has resistance corresponding to resistance of the load resistors. The second current source is connected in parallel to the resistor to decrease a current flowing in the resistor by a preset amount. The offset amount of the base level is determined by the current provided from the second current source multiplied by resistance of the resistor in the bias control.
In a modified arrangement of the bias control, the bias control further includes a voltage follower and another resistor. The other resistor is put between the output of the voltage follower, which reflects the level between the first current source and the resistor, and the second current source to provide another current to the other resistor. The offset amount of the base level is determined by the other current provided from the second current source multiplied by resistance of the other resistor.
In another arrangement of the amplifier, the amplifier includes a differential circuit and an upstream stage to drive the differential circuit. The differential circuit includes a pair of switching transistors each driven complementarily, a pair of load resistors each connected in series to the switching transistors, a pair of cascade transistors each put between the load resistors and the switching transistors, and a bias control. The bias control provides a base level of the cascade transistors that is higher than the input HIGH level of the switching transistors by a forward voltage of a junction diode subtracted by an offset amount. The discharge current of the base-emitter junction diode of one of the switching transistors is provided from or absorbed in the upstream stage through the other of the switching transistors.
The foregoing and other purposes, aspects and advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:
Next, details of a differential amplifier according to some embodiments will be described as referring to drawings. In the description of the drawings, numerals or symbols same or similar to each other will refer to elements same or similar to each other without overlapping explanations.
First, a mechanism causing undershoots will be described as referring to an ordinary differential amplifier.
Two outputs, Vout and /Vout, complementary to each other are denoted as:
/Vout=Vcc−R1×Ic1,and
Vout=Vcc−R2×Ic2,
where Vcc, Rn, and Icn (n=1, 2) are power supply voltage, resistance of load resistors, and collector currents of respective transistors, Q1 and Q2. That is, the output voltages, Vout and /Vout, in the DC mode are given by a voltage reduced by a voltage drop caused in load resistors due to respective collector current from the power supply Vcc. Neglecting the stray capacitors and junction capacitors in the AC mode, the current and/or voltage of respective nodes are fully denoted by the binary state. However, taking the junction capacitors between base and emitter Cbe into account, the current to charge/discharge this base-emitter capacitor Cbe flows in respective load resistors, R1 and R2, which causes the undershoots in the outputs, Vout and /Vout. The current Icd1 denoted by a solid line in
The explanation below explains describes the charge and the discharge of the junction capacitor Cbe during the transition of the transistor Q1 from the state of the turning off to the other state of turning on; while, the other transistor Q2 transits from the turning on state to the turning off state.
At the time t2, the transistor Q1 begins to turn on by the rising of the base level thereof and the falling of the common emitter level Vm, which increases the bias Vbe of the transistor Q1. From t2 to t3, two transistors, Q1 and Q2, both turn on to flow respective currents depending on the base bias Vbe of the transistors, Q1 and Q2.
The increase of the base bias of the transistor Q1 is enhanced from t1 to t2 because the increase of the base level overlaps with the decrease of the emitter level Vm in the transistor Q1. From t2 to t3, where the increase of the base level continues but the emitter level is set substantially in constant, the increase of the base bias Vbe of the transistor Q1 becomes moderate compared with the former period from t1 to t2. After t3, the increase of the base level and that of the emitter level becomes substantially equal; then, the base bias Vbe is set substantially in constant. For the other transistor Q2, the decrease of the base bias Vbe, that of the base level, and that of the emitter level show opposite behaviors from t1 to t4.
The charge and/or discharge current of the junction capacitor Cbe of the transistors, Q1 and Q2, become proportional to the time differentiation of the base bias Vbe, namely, Δ(Vbe)/Δt. Specifically, a large charge current for the junction capacitor Cbe of the transistor Q1 flows into this transistor Q1 from the upstream driver through the base thereof, and the charge current gradually decreases from t2 to t3, and from t3 to t4. On the other hand, the transistor Q2 charges the junction capacitor Cbe at t1 because the base bias Vbe2 thereof is in HIGH. From t2 to t3, the carriers charged in the capacitor Cbe is gradually discharged, and a current to discharge the capacitor Cbe extraordinarily increases from t3 to t4; however, the discharge current dose not flow in the transistor Q2 because this transistor Q2 is turned off from t3 to t4. Moreover, the current determined by the current source fully flows in the transistor Q1; that is, the current source does not have any room to absorb the discharge current of the transistor Q2. As a result, the discharge current comes out from the power supply Vcc passing the transistor Q1 and the load resistor connected in the transistor Q1, which induces a large voltage drop in the load resistor. Thus, the differential circuit shown in
Next, an embodiment of the present application will be described.
The preamplifier 2 drives, receiving inputs, Vin and /Vin, the emitter follower 3. The preamplifier 2 includes a differential amplifier 201, a current source 202 to extract a current Ip from the differential amplifier, and a resistor 203 connected between the power supply Vcc and the differential amplifier 201, which is often called as a common resistor. The emitter follower 3 includes two transistors, Q5 and Q6, whose bases are coupled with the outputs of the differential amplifier 201, and two current sources, 301 and 302, each extracts current Iref from the transistors, Q5 and Q6.
The post amplifier 4 amplifies the outputs of the emitter follower 3 differentially and generates outputs, Vout and /Vout, to drive differentially a load device 5 such s an optical modulator.
Specifically, the post amplifier 4 includes a pair of transistors, Q1 and Q2, each having emitters commonly connected to each other; load resistors, 401 and 402, with resistance Ro and each connected in series to respective transistors, Q1 and Q2; a pair of cascade transistors, Q3 and Q4, each connected in series to the transistors, Q1 and Q2, and between the transistors, Q1 and Q2, and the load resistors, 401 and 402; a current source 403 connected to the common emitter of the transistors, Q1 and Q2, to determine the amplitude of the outputs, Vout and /Vout; and a bias control 404 connected to the bases of the cascade transistors, Q3 and Q4. The paired transistors, Q1 and Q2, operate differentially by receiving signals in the bases thereof.
The bias control 404 determines the base level Vb_cas of the cascade transistors, Q3 and Q4, such that the discharge current of the junction capacitor Cbe caused in one of the transistors, Q1 and Q2, is absorbed thereby through the other transistor, Q2 and Q1, without flowing in the load resistors, 401 and 402.
The circuit 404A outputs the base level Vb_cas to the cascade transistors, Q3 and Q4, which is higher than the LOW level of the output /Vout by a preset amount. In the LOW level of the output /Vout, the current I0 attributed to the current source 403 fully flows in one of the load resistors 401, and the practical level thereof is given by: /Vout(LOW)=Vcc−I0×R0.
Distinguishing AC load from DC load of the post amplifier 4, the output /Vout swings around the average level Vcc−I0×R0 with amplitude of Io×Ro/2. The DC load corresponds to the load resistors, 401 and 402; while, the AC load means, when the outputs, Vout and /Vout, are coupled with the external device through coupling capacitors, a parallel circuit of the load resistors, 401 and 402, with the input impedance of the external device. Assuming that the external device has the input impedance same as resistance of the load resistors, 401 and 402, namely R0; the AC load becomes R0/2. Accordingly, the LOW level of the output /Vout becomes:
Then, decreasing the current I0 by one n-th, while, increasing resistance R0 by ¾ multiplied by n; a series circuit of the resistor 406 with resistance ¾×R0×n and the current source 405 providing the current I0/n generates a replica of the LOW level of the output /Vout.
That is, the circuit 404A shown in
In order to secure the further stable operation of the circuit 404A, the current Icont is preferably almost ten (10) times greater than the base input current for the cascade transistors, Q3 and Q4, which is typically a few microamperes to a few tenses of microamperes; specifically, the current Icont is preferably set to be several tenses of microamperes to several hundreds of microamperes.
Because of the voltage follower configuration of the operational amplifier 408, the output thereof virtually becomes the same with the non-inverting input thereof. Specifically, the level determined by the resistor 406 whose resistance is (¾)×R0×n multiplied by current I0/n, namely, Vcc−(¾)×R0×I0, which reflects the LOW level of the output /Vout, appears in the output of the operational amplifier 408. The output Vb_cas of the circuit 404B adds an offset voltage caused by the resistor 409 multiplied by the current Iref provided from the current source 410 to the output of the operational amplifier 408. Adjusting the current Iref and resistance Radj such that the offset voltage derived from the multiplication of these values becomes 0.1 to 0.2 V, the base level Vb_cas for the cascade transistors, Q3 and Q4, is optimally set. Because the offset voltage, Radj×Iref, is independent of the power supply Vcc and the current I0, the output Yb_cas always gives the constant offset with respect to the LOW level of the output of the post amplifier 4.
In order to operate the bias control 404B further stably, the current Iref is preferably about ten (10) times greater than the base bias current of the cascade transistors, Q3 and Q4. Because the latter current, the base bias current, is typically several microamperes to several tenses microamperes, the current Iref is preferably several tenses of microamperes to several hundreds of microamperes.
Thus, the differential circuit with the paired switching transistors, Q1 and Q2, paired cascade transistors, Q3 and Q4, each connected in series to respective switching transistors and the bias control 404 effectively suppresses the undershoots appeared in the falling edge of the output of the differential circuit caused by the discharge current of the base-emitter junction capacitors Cbe by setting the base level of the cascade transistors, Q3 and Q4, higher than the LOW level of the output by 0.1 to 0.2V by the bias control 404 without implementing any other specific circuit. In such a configuration, the discharge current caused in one of the switching transistors, Q1 and Q2, is provided from the bias control 404 not the load resistor 401 or 402 through the other switching transistor, Q2 or Q1.
Specifically, the bias control, 404 to 404B, sets the base of the cascade transistors, Q3 and Q4, in a level higher than the output LOW level of the post amplifier 4, namely, the collector of the cascade transistors, Q3 and Q4, by 0.1 to 0.2 V. In such a base-collector bias Vbc, the junction capacitance Cbc therebetween abruptly increases. Then, the discharge current derived from the switching transistors, Q1 and Q2, flows in the path from the base to the collector.
Also, in the differential circuit 1, the discharge current derived from the junction capacitance Cbe between the base and emitter of the switching transistor Q2 is provided from the base of the cascade transistor Q3 through the cascade transistor Q3 and the other switching transistor Q1. The undershoot appeared in the falling edge of the output Vout generated by the switching transistor Q2 is effectively suppressed. Also, the bias controls, 404A and 404B, automatically set the base bias of the cascade transistors, Q3 and Q4, in the level higher than the LOW level of the collector output of the cascade transistors, Q3 and Q4, by 0.1 to 0.2V.
The invention of the present application is not restricted to those described above. For instance, the embodiments above described flow the discharge current of the junction capacitor Cbe of the switching transistor which is provided from or absorbed in the bias control through the cascade transistor Q3 and the other switching transistor Q1. However, the discharge current of the junction capacitance Cbe is preferably provided from or absorbed in the base of the other switching transistor Q1. Specifically, setting the base HIGH level of the other switching transistor Q1 higher than the collector LOW level thereof by a preset condition, namely 0.1 to 0.2 V higher; the discharge current for the junction capacitance Cbe of the switching transistor Q2 is effectively provided from or absorbed in the base of the other switching transistor Q1 through the path Icd3 shown in
Specifically, when the amplifier 2 in the upstream stage outputs HIGH level, which is determined by resistance Rp and the current Ip, the replica in the bias control 404C is, similar to the aforementioned bias controls, 404A and 404B, determined by the current Ip/n of the current source 413 and resistance Rp×n of the resistor 411 connected in series between the power supply Vcc and the ground, which emulates the output HIGH level of the amplifier 2. In addition to those elements, the bias control 404C includes an additional current source 412 to generate the preset offset voltage determined by Icont×Rp×n, where Icont is the current of the current source 412. Setting the current flowing in the emitter follower 3 by the current sources, 301 and 302, such that the current density of the transistors, Q5 and Q6, to be substantially equal to the current density of the cascade transistors, Q3 and Q4; the forward junction voltage of the transistors, Q5 and Q6, is set to be equal to that of the cascade transistors, Q3 and Q4.
When the current source 202 depends on a temperature, the current source 413 in the bias control 404C preferably shows temperature dependence same as that of the current source 202. The bias control 404C effectively suppresses the undershoot independent of the temperature. In order to operate the bias control 404C further stably, the current Icont+Ip/n determined by two sources, 412 and 413, is preferably about ten (10) times greater than the base bias current Ib of the switching transistors, Q1 and Q2. The latter current Ib is typically from several microamperes to several tenses of microamperes, so, the output current of the bias control 404C is preferably from several tenses of microamperes to several hundreds of microamperes.
The bias control 404C, as schematically shown in
The junction capacitance between the base and the collector of the switching transistor, Q1 and Q2, operates as miller capacitance to degrade high frequency performances of the switching transistors, Q1 and Q2; typically the switching speed of the transistors, Q1 and Q2, is lowered. The bias control 404C of the embodiment sets the base-collector bias Vbc_sw of the switching transistors, Q1 and Q2, in a forwardly biased condition of the junction but the absolute amount thereof is only 0.1 to 0.2V; and sets this bias only for the state where the switching transistors, Q1 and Q2, turn on. Thus, the bias control 404C suppresses the undershoot without degrading the high frequency performance of the differential amplifier 1.
One of applications of the differential circuit 1 thus described is for a travelling wave amplifier (TWA) shown in
In the foregoing detailed description, the circuits of the present invention have been described with reference to specific exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the present invention. The present specification and figures are accordingly to be regarded as illustrative rather than restrictive.
Number | Date | Country | Kind |
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2012-248431 | Nov 2012 | JP | national |