This subject matter is generally related to electronics, and more particularly to compensating variations in unbalanced differential pairs.
An ideal operational amplifier amplifies the difference in voltages applied to its two input terminals. If the input voltages are equal, then the ideal output voltage of the amplifier is zero. In practical operational amplifiers, however, the output is often not zero due to an unbalanced differential pair in the operational amplifier. This non-zero output can be modeled as an offset voltage. If the offset voltage is constant over the operational range of the amplifier then compensation can be accomplished using another voltage of the same magnitude and opposite polarity. The offset voltage, however, depends on transconductance gain of the differential pair, and the transconductance gain can vary with changes in temperature. This can result in an offset voltage that is not constant.
A bias current is generated for an unbalanced differential pair that is proportional to the transconductance gain of the differential pair. When the transconductance gain varies (e.g., due to temperature variations), the bias current varies in proportion thereby maintaining a constant offset voltage. In some implementations, a voltage to current converter circuit generates the bias current from a constant reference voltage that is independent of temperature and voltage supply variations (e.g., a bandgap reference voltage).
The disclosed implementations provide a fully integrated solution for a constant offset comparator, which can be manufactured at low cost, and which can potentially work at a low voltage supply (e.g., 1.2 volts).
The gate terminals of the transistors 102, 104 are connected to input voltages Vi1, Vi2, which can be the non-inverting and inverting inputs, respectively, of an operational amplifier. The transistors 102, 104 have transconductance gains β1 and β2, respectively. The transconductance gains are not equal (β1≠β1) in the unbalanced differential pair 100, resulting in a non-zero output voltage.
The transconductance gain β of a transistor is given by the relation below:
where κ is a transconductance parameter, W is the channel width and L is the channel length of the transistor.
The offset of the differential pair 100 is given by the relation below:
where ΔVgs, is the difference between the gate-to-source voltages of the NMOSFET transistors 102, 104, Vt is a threshold voltage of the NMOSFET transistors 102, 104 and β1, β2, are the transconductance gains of NMOSFET transistors 102, 104. The offset voltage, os, of [2] may not always be constant because transconductance gains β1, β2 can vary as a function of temperature. To obtain a constant offset voltage, os, the bias current Ibias should be proportional to the transconductance β of the differential pair. For a NMOSFET transistor, Ibias is given by the relations
To make this current only proportional to β, a Vgs equals to Vbg+Vt is imposed
For example, assuming that
β2=K·β1=β, [4]
Combining [3], [4] and [2] gives,
os=ΔVgs=V
bg·(√{square root over (K)}−1)=const. [5]
As can be observed from [5], os is a function of a constant bandgap voltage, Vbg, and K, where K is a ratio of β2 to β1 and is also constant. Thus, as temperature varies, Vbg and K remain substantially constant, resulting in the offset voltage remaining substantially constant.
where β is the transconductance gain and Vbg is the bandgap voltage. As can be observed from [3], the Ibias is only proportional to β because the square of bandgap voltage is constant. The generation of Ibias is described below in reference to
When Vdg=0 for transistor 402, for example by connecting the drain and gate terminals of the transistor 402 together as shown, then, Id, in the transistor 402 is a function of Vgs, and Iref sets the value of Vgs. The transistor 402 is sized to give Vgs=Vt. So, the gate of the transistor 404 is equal to
and Vbg is constant, the circuit 400 generates a bias current, Ibias, that is proportional to β.
The example circuit 400 includes an example reference voltage supply circuit. The reference voltage supply circuit can comprise, for example, a first MOSFET transistor 402 having a gate terminal, a drain terminal and a source terminal, where the drain terminal and gate terminal are configured to have a drain-to-gate voltage of zero; and a resistive element 406 having a first end coupled to the drain terminal of the first MOSFET transistor 402 and a second end coupled to a reference current source 408, where the resistive element 406 and the reference current source 408 generate a reference voltage supply. The reference voltage supply can be, for example, equal to the sum of a bandgap voltage and a threshold voltage of the first MOSFET transistor 402. The reference voltage supply circuit can comprise, in another example, a first MOSFET transistor 402 having a gate terminal, a drain terminal and a source terminal, where the drain terminal and gate terminal are configured to have a drain-to-gate voltage of zero; and a reference current source 408 coupled to the drain terminal of the first MOSFET transistor 402, where the reference current source 408 includes a threshold-referenced or self-biased current source.
The example circuit 400 includes an example converter circuit coupled to the example reference voltage supply, the converter circuit operable for generating the bias current from a reference voltage supply generated by the reference voltage supply circuit. The converter circuit can comprise, for example, a second MOSFET transistor 404 having a gate terminal, a drain terminal and a source terminal, where the gate terminal is coupled to the reference supply voltage, the source terminal is coupled to ground voltage, and the drain terminal is coupled to the third terminals of the third terminals of transistors of a differential pair (e.g., as shown in
While this document contains many specific implementation details, these should not be construed as limitations on the scope what may be claimed, but rather as descriptions of features that may be specific to particular embodiments. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable sub combination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a sub combination or variation of a sub combination.
This application is a divisional and claims the benefit and priority of U.S. Ser. No. 12/620,351 filed on Nov. 17, 2009, the entire contents of which are hereby incorporated herein by reference.
Number | Date | Country | |
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Parent | 12620351 | Nov 2009 | US |
Child | 13414145 | US |