The Federal Communications Commission (FCC) has allotted a spectrum of bandwidth in the 60 GHz frequency range (57 to 64 GHz). The Wireless Gigabit Alliance (WiGig) is targeting the standardization of this frequency band that will support data transmission rates up to 7 Gbps. Integrated circuits, formed in semiconductor die, offer high frequency operation in this millimeter wavelength range of frequencies. Some of these integrated circuits utilize Complementary Metal Oxide Semiconductor (CMOS) or Silicon-Germanium (Site) technology to form the dice in these designs. At 60 GHz, achieving the desired parameters of gain (G), bandwidth (BW) and noise figure (NF) present difficult challenges. These parameters can be traded against the other in the design of these high frequency circuits.
A source follower, also known as a common drain amplifier, is a circuit configuration of an active device that is used in circuit designs to provide a voltage buffer or to transform impedances. A CMOS source follower circuit provides high input impedance, moderate current gain, low output impedance and a voltage gain approaching one Such a device can be fabricated using the CMOS 40 nm technology designed to operate at a VDD of 1.2V.
A Sallen-Key topology is a second-order active filter that presents a finite input impedance and a small output impedance in its external filter characteristics. The filters can be designed as a low-pass, band-pass or high-pass filter. Such active filters avoid the use of inductors which can consume large areas in integrated circuits. A higher filter gain is achieved by cascading two or more Sallen-Key filter stages.
Various embodiments and aspects of the inventions will be described with reference to details discussed below, and the accompanying drawings will illustrate the various embodiments. The following description and drawings are illustrative of the invention and are not to be construed as limiting the invention. Numerous specific details are described to provide a thorough understanding of various embodiments of the present invention. However, in certain instances, well-known or conventional details are not described in order to provide a concise discussion of embodiments of the present inventions.
As the power supply voltage reduces in the scaling of integrated circuits, the voltage headroom for analog integrated circuits decreases correspondingly. This makes the design of high performance systems in a low power supply integrated circuit much more challenging. A source follower amplifier can be formed from two series stacked devices coupled between the VDD and GRD where one device translates the input signal (active device) while the second device is the load (load device). For example, a CMOS source follower is formed by placing two series stacked n-channel (NMOS) devices coupled between VDD and GRD with the lower device presenting a controlled current load to the upper device that is driven by the input. If the supply voltage (VDD-GRD) is 1.2V, the headroom, or available output signal swing, is an important concern. With only two devices between the power supplies, the source follower generates an output signal with a maximum voltage swing of 400 mV to 500 mV. This maximum voltage swing is called the headroom.
One of the embodiments of the disclosure modifies the load device in a source follower so that the load device also allows the introduction an input signal that enhances the gain of the source follower. Thus, the load device provides a DC (Direct Current) bias to operate the source follower and introduces an AC (Alternating Current) gain when the load device is driven by a signal with the proper phase (180°) compared to the signal being applied to the active device. The AC voltage gain of the load device is added constructively to the AC voltage gain of the conventional source follower to provide an improvement in the gain of the source follower by 6 dB. Thus, the AC voltage gain of a source follower using this inventive concept can be increased from 0 dB to 6 dB.
Another one of the embodiments of the disclosure is to incorporate the source follower with AC voltage in the load device into a differential amplifier configuration. A differential configuration amplifies an AC input signal and a complement AC input signal and generates an AC output signal and a complement AC output signal. The complement AC input signal is phase shifted 180° from the AC input signal and the complement AC output signal is phase shifted 180° from the AC output signal. The complement AC output signal is also referred as an inverse AC output signal. Overall, the gain of the source follower differential amplifier can be as large as a 6 dB gain.
A different one of the embodiments of the disclosure is to incorporate the source follower into the design of a Sallen-Key filter. The operational amplifier 1-15 in the Sallen-Key filter in
In accordance with another embodiment of the invention, the features of the differential signal output stage using the first and second source follower stages are advantageously leveraged to form the Sallen-Key filter topology. The overall front end gain of the receiver of the LNA, Mixer and BaseBand amplifier of devices fabricated at 40 nm CMOS fails to deliver the desired gain to design a receiver that can operate with 60 GHz signals at low power. Additional gain was required in the RF link. The Sallen-Key LPF (Low Pass Filter) uses the inventive source followers to provide 6 dB of AC voltage gain per differential signal. Furthermore, two Sallen-Key LPFs are concatenated in series to provide 12 dB of additional AC voltage gain. Other aspects and features of the inventions are also presented.
Please note that the drawings shown in this specification may not necessarily be drawn to scale and the relative dimensions of various elements in the diagrams are depicted schematically. The inventions presented here may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be through and complete, and will fully convey the scope of the invention to those skilled in the art. In other instances, well-known structures and functions have not been shown or described in detail to avoid unnecessarily obscuring the description of the embodiment of the invention. Like numbers refer to like elements in the diagrams.
a depicts an on-chip RF link.
b illustrates a Sallen-Key filter.
c illustrates a low-pass Sallen-Key filter.
a shows a two device source follower in accordance with the present invention.
b presents the current mirror generating the voltage bias in accordance with the present invention.
c depicts a 6 dB AC voltage gain in a source follower in accordance with the present invention.
d illustrates the 6 dB AC voltage gain in a source follower with RC networks in accordance with the present invention.
e shows the current source and a dynamic source follower block in accordance with the present invention.
f illustrates a differential source follower with 6 dB of AC voltage gain in accordance with the present invention.
g shows a differential source follower with the biasing and RC networks in place in accordance with the present invention.
h presents
a presents the two pole Sallen-Key filter in accordance with the present invention.
b presents a cascaded two pole Sallen-Key filter in accordance with the present invention.
c depicts an implementation of the differential two pole Sallen-Key filter cascaded in accordance with the present invention.
a illustrates the two pole Sallen-Key filter in accordance with the present invention.
b illustrates the two pole Sallen-Key filter using a source follower as an operational amplifier in accordance with the present invention.
c depicts a low pass Sallen-Key filter as in
d illustrates a generalized Sallen-Key filter replaced with a dynamic source follower block in accordance with the present invention.
a presents the second cascaded stage of
b illustrates the second cascaded stage of
a shows a differential cascaded low pass Sallen-Key filter using the dynamic source follower with the biasing, RC networks and components in accordance with the present invention.
b depicts a differential cascaded low pass Sallen-Key filter with dynamic source follower blocks in accordance with the present invention.
a illustrates a differential cascaded low pass Sallen-Key filter using the dynamic source follower as in
The inventions presented in this specification can be used in any wired or wireless high frequency system design. One application of the inventions can be applied to the front end of a receiver circuit 1-1 as illustrated in
b illustrates a Sallen-Key filter 1-9 which has a large input impedance and small output impedance. The input 1-10 to the filter is via Z1 1-11 whose output is coupled to Z2 1-12 and Z3 1-14. Z3 1-14 couples to the output 1-16. Z2 1-12 is coupled to Z4 1-13 and the positive input of the operational amplifier 1-14. The other end of Z4 1-13 is grounded. The output 1-16 is also coupled to the negative input of the operational amplifier 1-15. The operational amplifier offers high gain and allows the construction of a second order filter without the use of inductors. In FIG. 1c, the impedances are replaced with resistors or capacitors in the Sallen-Key filter 1-17 to form a low pass filter.
a depicts two n-channel devices (N-MOS) coupled in series forming a path between the power supplies VDD and GRD (ground). This configuration is known as a source follower. The lower device N1 acts as a load device and is biased by a DC bias voltage Vbias while the upper device N2 acts as an active device and is driven by Vint, 2-2. The output signal Vout 2-3 is in phase (non-inverted) with Vin1. The AC voltage gain of out Vou1/Vin1 is almost one or 0 dB and behaves very linearly.
b illustrates how the current source is formed using device N3 and N1. A bias current Ibias can be applied to the device N3 that is connected in saturation where the gate is connected to the drain. The generated voltage Vbias is then applied to the device N1 which scales the current carried in N1 of the stacked devices N2 and N1. The stacked devices form a path between the power supplies. The load device (lower device) and the reference transistor form a current mirror. The active device (upper device) has first signal Vin1 2-2 applied to the input. The first signal Vin1 causes the generation of an output signal Vout 2-3 that is in phase with the input signal Vin1 and has a AC voltage gain approaching one (0 dB). The maximum swing of the output signal Vout equals the headroom. Since the gain is 0 dB, the input voltage has a voltage swing equal to the headroom.
In accordance with one inventive concept of the invention, a source follower stage is modified to provide an AC voltage gain that approaches two (6 dB) as illustrated in
The circuit 2-17 in
The second RC network of
The circuit 2-20 in
The second RC network Cn1 and Rn1 acts as a high pass filter and couples the high frequency components of a second input signal (Vin 2-6) to the N2 device. The second RC network also acts as a low pass filter and couples a second biasing DC voltage component (from VDD) to the N2 device. An output signal 2-23 is generated at the output of the Dynamic Source Follower.
In accordance with another embodiment of the invention, the differential source follower 2-10 as illustrated in
g depicts the circuit 2-15 with RC networks and the current source applied to the circuit shown in
The RC network of Rn1 and Cn1 in first source follower of
The differential circuit 2-27 in
The Sallen-Key filter 3-1 is depicted in
as required for the impedance of Z1 in the second filter. The impedance of Z1 in the second filter is also called the source impedance. The remaining components of the second filter: Z2- Z4 and the operational amplifier are similar to that which was depicted in
In accordance with another embodiment of the inventive concept, the
which is also first element of the second filter.
c illustrates the differential Sallen-.Key filter 3-4 coupled between the differential outputs of the BBAMP 3-5 at nodes Vinf and
a illustrates a Sallen-Key filter 4-1 in accordance with another embodiment of the inventive idea. The resistance R1 is not illustrated but is presented to this circuit when the previous stage is coupled to the input node V′outf. The capacitance C3 couples the input signal V′outf to the output signal Voutf while the impedances R2 and C4 form a voltage divider between V′outf and GRD (or VSS) generating Vin. The operational amplifier requires both an input signal Vin 4-4 and its complement
By comparing the equivalent Sallen-Key filter 4-1 depicted in
can be altered by adjusting the current flow through the two series coupled devices N1 and N2.
The distribution of sheet resistance values over process variations causes variations in the desired value of the resistance R2 which can affect the operation of the Sallen-Key filter in the field. To maintain one desired behavior in the filter, the ratio of R2 to Z5 needs to be matched. Since the output impedance of the inventive Sallen-Key filter can be changed by altering the Ibias reference current, the current I bias can be adjusted until the value of
or Z5 matcnes the requirea ratio compared to R2. Thus, the inventive concept can compensate the filter for process variations.
c illustrates the Dynamic Source Follower 4-7 replacing the RC networks of Cn1-Rn1 and Cn2-Rn2 along with the devices N1 and N2 given in
As depicted in
The operational amplifiers 1-15 and 1-15′ can be replaced by the Dynamic Source Followers 5-3 and 5-3′ as illustrated in
The cascaded differential Sallen-Key filter presented in
The gain of the second cascaded filter in
while the gain of the first and second cascaded filters are given by (3) as:
The cascaded differential LPF Sallen-Key filter is designed to have a cutoff frequency of about 900 MHz. This cutoff is determined by the low pass filter consisting of Z1 (output impedance of the previous filter), R2 and C4. However, Vin2 is coupled to the device N2 by the high pass filter formed by Cn1-Rn. The high pass filter is designed to pass frequencies greater than 1 to 2 MHz. Thus, the initial 900 MHz bandwidth signal of the Sallen-Key filter is notched out at DC and up to 2 MHz. However, this loss of signal content does not affect the operation of the system since the design can still meet performance specifications. The Ibias current can also be adjusted to alter the bandwidth of the overall filter by altering the output impedance of the Dynamic Source Followers
by adjusting the current mrough the four mirrored devices; N1, N4, N6 and N8. The bandwidth of the filter can be changed through Ibias to control the
of these four devices.
b replaces all four source followers in
a illustrates a circuit 7-1 where several current bias circuits (7-2 through 7-5) are used. The first bias current Ibias1 adjusts the
of the first cascaded stage of the filter while the second bias current Ibias2 adjusts the
of the second cascaded stage of the filter. The two independent controls of the current bias Ibias1 and Ibias2 allow the bandwidth of the Sallen-Key filter to be altered in another dimension when compared to the circuit given in
of the first cascaded stage and Ibias2 control the
of the second cascaded stage. In practice, the
of the first stage is slightly different from the
of the second stage due to loading of PGA Differential Input 3-10. The loading of the PGA 3-10 on the second cascaded Sallen-Key filter is different than the loading the second cascaded Sallen-Key presents to the first cascaded Sallen-Key filter. Thus, the total bandwidth of the entire chain (from BBMAP 3-7, to the first Sallen-Key filter, to the second Sallen-Key filter to the PGA 3-10 and including the A to D (not shown) must be adjusted by the these filter controls. The independent adjustment of the two current biases Ibias1 and Ibias2 provides additional control to the adjustment of the bandwidth.
Finally, it is understood that the above description are only illustrative of the principle of the current invention. Various alterations, improvements, and modifications will occur and are intended to be suggested hereby, and are within the sprit and scope of the invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the arts. It is understood that the various embodiments of the invention, although different, are not mutually exclusive. In accordance with these principles, those skilled in the art may devise numerous modifications without departing from the spirit and scope of the invention. Although the circuits were described using CMOS, the same circuit techniques can be applied to depletion mode devices and BJT or biploar circuits, since this tecnology allows the formation of current sources and source folloowers. When a device is specified, the device can be a transistor such as an N-MOS or P-MOS. The CMOS or SOI (Silicon on Insulator) technology provides two enhancement mode channel types: N-MOS (n-channel) and P-MOS (p-channel) devices or transistors. The implimentation of a low pass Sallen-Key filter was presented, although the Sallen-Key filter can be used to form bandpass and high pass filters. In addition, a network and a portable system can exchange information wirelessly by using communication techniques such as TDMA (Time Division Access), OFDM (Orthogonal Frequency Division Multiplexing), UWB (Ultra Wide Band), WiFi, WiGig, Bluetooth, etc. The network can comprise the phone network, IP (Internet protocol) network, LAN (Local Area Network), ad hoc networks, local routers and even other portable systems.
The present application is related to the co-filed U.S. application entitled “A High Performance Divider Using Feed Forward, Clock Amplification and Series Peaking Inductors”, and the co-filed U.S. application entitled “Method and Apparatus of Minimizing Extrinsic Parasitic Resistance in 60 GHz Power Amplifier Circuit? both filed on Sep. 23, 2011, which are invented by the same inventor as the present application and incorporated herein by reference in their entireties.