The present invention relates to a trans-impedance amplifier (TIA) for a photodetector circuit, and in particular to a differential TIA with a mixed AC/DC coupling scheme.
A typical optical receiver front-end is composed of a photo diode (PD) 1 followed by a trans-impedance amplifier (TIA) 2 and main voltage amplifiers (MAs) 3 as shown in
Moreover, for coherent optical communication links, mixing local laser power and the modulated transmitted optical signal 4 using the photo diode 1 results in very large DC current. PD DC current is expressed as,
I
DC
=R×(PLO+PS), (1)
where PLO is the local optical laser power and PS is the received optical signal power. Equation (1) shows that the photo diode output DC current of the PD 1 in coherent optical communication links depends on the local laser power and the optical received power. For example, a photo diode 1 with responsivity (R) of 1 A/W results in 4 mA DC current at 6 dBm local laser power input. Such a large DC current is more than enough to saturate the receiver front-end and severely degrade performance. Thus, it is very important to have DC current cancellation circuitry in front of the TIA 2 of coherent optical communication links.
However, for the latest photodetectors the required TIA low cutoff frequency (FC) is around 1 MHz which requires either a large AC coupling capacitor CC or a huge biasing resistor RC. As an example, a coupling capacitor CC with a capacitance of at least 1.6 pF with a biasing resistor RC with a resistance of at least 1 MΩ are required to achieve cutoff frequency of 1 MHz. Unfortunately, this technique suffers from two main drawbacks: 1) CC parasitic capacitance, and 2) photo diode biasing. For bulk silicon technologies, the bottom plate ground parasitic capacitance of the coupling capacitor CC is around 10% of its value and degrades the front-end TIA bandwidth, which is defined by its input node capacitance. Thus, there is a maximum coupling capacitor (CC) that can be used without degrading the TIA bandwidth. On the other hand, the biasing voltage across the photo diode 11 is defined by the following equation:
V
BIAS
=V
PD−2(IDC×RC), (3)
where VBIAS is the reverse bias voltage across the photo diode PN junction, VPD is the bias supply voltage for the photo diode 11, and IDC is the DC current (average current) through the photo diode 11. High photo diode reverse biasing voltage is required to obtain good photo diode responsivity and low PN junction capacitance. However, equation (3) shows that VBIAS depends on PD average current and leads to different PD biasing for different received optical power. Furthermore, a large RC value impedes receiving high optical power levels as the DC current will be large and the voltage drop across the biasing resistor RC will be huge. As a numerical example, an IDC of 10 μA leads to a 10 V drop on a 1 MΩ biasing resistor RC, which is not practical. Moreover, the situation in coherent optical receivers is much worse as the photo diode DC current is around 1 mA and requires a biasing resistor RC of less than 1 kΩ for less than 1 V drop across the biasing resistor RC.
An object of the present invention is to overcome the shortcomings of the prior art by providing a differential TIA scheme with mixed DC and AC coupling to provide a desired low cut off frequency with low noise.
Accordingly, the present invention relates to an optical receiver comprising:
a photodetector configured to generate a differential input current including a first input current component and a second input current component in response to an optical signal;
a trans-impedance amplifier (TIA) comprising a first TIA section and a second TIA section, the first TIA section configured to convert the first input current component into a first input voltage component, and the second TIA section configured to convert the second input current component into a second input voltage component;
variable gain amplifier (VGA) configured to amplify the first input voltage component and the second input voltage component to a desired output voltage forming a first output voltage component and a second output voltage component;
an AC coupler in an AC-coupled path for AC coupling the first TIA section to the photodetector; and
a DC coupler in a DC-coupled path, absent a capacitor, for DC coupling the second TIA section to the photodetector.
The invention will be described in greater detail with reference to the accompanying drawings which represent preferred embodiments thereof, wherein:
While the present teachings are described in conjunction with various embodiments and examples, it is not intended that the present teachings be limited to such embodiments. On the contrary, the present teachings encompass various alternatives and equivalents, as will be appreciated by those of skill in the art.
Compared to the above described single-ended schemes, a differential TIA scheme has advantages because the differential signal becomes 2× larger, while the RMS added random noise is only √2× larger, and therefore the differential TIA has increased SNR by only √2×. Moreover, differential TIA schemes provide better linearity for large input currents and low gain settings due to better common mode rejection ratio (CMRR) by 2nd harmonics rejection. Improved linearity is critical in PAM4 or higher order modulation schemes.
With reference to
The PD 21 includes an anode 33 and a cathode 34, which are coupled to two different paths, i.e. an DC-coupled signal path and a AC-coupled signal path, respectively. To AC couple the PD 21 to the TIA 22 using passive AC-coupler circuitry, an AC-coupling capacitor (CC) 36 is positioned between the photodetector 21 and the TIA 22 to block the DC current, while passing the modulated AC current to the TIA 22. A biasing resistor (RC) 37 extending from the AC-coupled path to a biasing voltage source VPD is used to bias the voltage from the cathode 34 to be reverse biased, and provides an alternative path for the photo diode DC current IDC. The biasing resistor RC 37 with the AC-coupling capacitor CC 36 form a high pass filter section in the RF AC-coupled signal path, whereby the cutoff frequency (FC) is calculated as,
However, the latest photodetectors require a TIA low cutoff frequency (FC) around 1 MHz, which requires either a large AC coupling capacitance CC or a huge biasing resistance RC. As an example, a coupling capacitor 36 with a coupling capacitance CC of 4 pF would require a biasing resistor 37 with a biasing resistance RC of at least 40 kΩ to achieve cutoff frequency of 1 MHz, resulting in a photodiode biasing voltage of over 20V for 0.5 mA of input current, which is unacceptable. As stated above, this technique also suffers from two main drawbacks: 1) parasitic capacitance, and 2) photo diode biasing. For bulk silicon technologies, the bottom plate ground parasitic capacitance of the coupling capacitor 36 is around 10% of its value and degrades the bandwidth of the front-end of the TIA 22, which is defined by its input node capacitance. Thus, there is a maximum coupling capacitance CC for the coupling capacitor 36 that can be used without degrading the bandwidth of the TIA 22. Accordingly, a coupling capacitance CC of less than 10 pF, preferably less than 6 pF, and more preferably between 2 pF and 5 pF is preferred for the coupling capacitor 36 as an AC coupler for the AC-coupled path. A resistance of less than 10 kΩ, preferably less than 6 kΩ, and more preferably between 2 kΩ and 5 kΩ may be used as RC in the biasing resistor 37 in the AC coupler for the AC-couple path.
However, to further reduce and control the VBIAS, the anode voltage VB from the DC coupling path may be preset, as hereinafter described, whereby the biasing voltage across the photodetector 21 is defined by the following equation:
V
BIAS
=V
PD
−V
B−(IDC×RC), (5)
where VBIAS is the reverse biasing voltage across the PN junction of the photodetector 21, VPD is the photodiode bias voltage from a bias voltage source, IPD is the DC current (average current) through the photodetector 21 caused by the incoming light, and VB is the voltage from Anode 33 or the TIA input voltage, as will be discussed below with reference to
With reference to
In the DC cancellation circuit 41, the reference voltage signal VREF is compared in a voltage comparator OA with one of the sensing input points, e.g. taken at the input or the output of the second TIA section 22b generating a comparison. The difference, i.e. the comparison, between the sensed point and the modified reference voltage signals VREF is used to control a first terminal, e.g. gate, of a first feedback transistors, e.g. NFET, to sink the input DC current of the second current component 27b (IIN_DC) of the DC-coupled path via the second and third terminals, e.g. drain and source, of the feedback transistor NFET, and set the DC input voltage (VB) VIN_DC for the second TIA section 22b to be about equal to VREF, e.g. 0.3 V to 1.5 V, preferably 0.6 V to 1.1 V.
Due to the limited time-constant from the biasing resistance RC of the biasing resistor 37 and the capacitance CC of the coupling capacitor 36 in the AC-coupled path, the low cut-off frequency (FC) may be higher than the link specification (˜1 MHz). However, a low frequency gain boosting of the impedance in the shunt-feedback of the first TIA section 22a in the AC-coupled path may resolve this problem. With reference to
A flatter AC response at low frequency improves the low frequency group-delay variation (GDV) significantly, and the improved GDV enables a reduction in BER.
The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.
This application is a continuation-in-part of and claims priority from U.S. patent application Ser. No. 16/135,914, entitled Optical Receivers with DC Cancellation and Offset Cancellation, filed Sep. 19, 2018, which is incorporated herein by reference.
Number | Date | Country | |
---|---|---|---|
Parent | 16135914 | Sep 2018 | US |
Child | 16551867 | US |