The present invention relates to a diffractive optical element (DOE) array apparatus and method of using the apparatus in laser processing. More specifically, the present invention relates to a way of interchanging DOEs for use with lasers in manufacturing for versatile tasks such as drilling holes or vias of various sizes and shapes and multiple ablation or material transformation patterns in a surface of an object
There is an ever-increasing demand for smaller and smaller electronic devices in today's high-tech marketplace. As a result, new and innovative fabrication techniques have become a focal point of many manufacturers. Many manufacturers have turned to laser processing as a means of fabrication, (e.g. for blowing fuses, via and hole drilling, ablation patterning, resistor trimming, material transformation such as curing monomers to polymers, changing refractive index, transmissivity or reflectivity and etc.). However, laser processing systems are very costly and can be inefficient. Manufacturers have sought parallel laser processing methods to increase throughput and to reduce cost. Therefore, there exists a need to use parallel laser processing to increase throughput and to reduce cost in the fabrication of electronic devices.
The diffractive optical element (DOE) is one method of employing parallel laser processing for electronic device fabrication. The DOE enables parallel processing by optically diffracting and directly controlling the optical phases. Therefore, a wide range of applications including, for example, multi-spot beam splitters or shapers, can be expected as a result of this preferred benefit. The beam splitting or shaping can be used for drilling holes or vias of various sizes and shapes and multiple ablation or material transformation patterns. Compared to conventional beam splitting methods such as partial mirrors or amplitude masks, the DOE is compact and capable of generating massively parallel processing patterns. Also, unlike an amplitude mask that generates a pattern by blocking most of the incident laser beam, the DOE is very efficient because it is non-absorbing.
A system and method of laser drilling is detailed in U.S. Patent Application 20030102291. The '291 patent application describes a method of parallel laser processing with a single DOE. However, the '291 patent application does not address the process of changing the DOE for additional ablation patterns, (e.g., for patterning multi-leveled circuit boards). For example, the '291 patent application and other current systems require that the DOE be changed either manually or robotically in the system. Changing the DOE using current conventional methods, even robotically, can be time-consuming and inefficient and therefore costly. Alternatively, multiple laser processing machines are used, with each machine using a single DOE for a single pattern, and work pieces transferred from machine to machine for multiple patterns to be processed. However, this alternative would be more costly. Therefore, there exists a need to streamline the DOE changing process in DOE laser processing systems for quicker fabrication of electronic devices. Also, in conventional laser processing systems that use DOEs, the hole or pattern density is limited by the density of the pattern on the DOE. With the miniaturization of electronic devices year by year, there further exists a need to pattern or drill holes or cause material transformations in an object with a greater density per square inch than one DOE can provide.
A method and apparatus for ablating a desired high-density pattern of vias in a surface of an object can be found in U.S. Pat. No. 6,256,121, entitled “Apparatus for ablating high-density array of vias or indentation in surface of object.” The '121 patent uses an X-axis and Y-axis automatic repeat positioning mechanism for redirecting a laser beam to a desired one holographic imaging lens in an array of holographic imaging lenses to make a via in a surface of the object. The repeat positioning then moves the laser beam to a different holographic imaging lens on the array for drilling another via in a different location on the object. The holographic imaging lenses may vary in application from one to another on the array to form different shapes on the surface of the object, thus, multiple shaped vias or holes can be formed in multiple locations. However, laser processing systems that use automatic repeat positioning mechanisms do not adequately employ parallel processing techniques and are therefore inefficient. Also, the addition of automatic repeat positioning mechanisms in a laser processing system adds undo complexity and cost to the manufacturer. Therefore there exists a need for a laser processing system that drills multiple holes or vias of various sizes and shapes, and further, drills multiple ablation patterns without adding complex, inefficient and costly automatic repeat positioning mechanisms for redirecting a laser beam.
It is therefore an object of this invention to use parallel laser processing to increase throughput and to reduce cost in the fabrication of electronic devices.
It is another object of this invention to streamline the DOE changing process in DOE laser processing systems for quicker fabrication of electronic devices.
It is yet another object of this invention to pattern or drill holes or cause material transformation in an object with a greater density per square inch than one DOE can provide.
It is yet another object of this invention to provide a laser processing system that drills holes or vias of various sizes and shapes and multiple ablation or material transformation patterns without using costly and inefficient automatic repeat positioning mechanisms for redirecting a laser beam.
In accordance with the present invention, a DOE array apparatus includes a plurality of different interchangeable DOEs for use with lasers in manufacturing for versatile tasks such as drilling holes or vias of various sizes and shapes and multiple ablation or material transformation patterns on the surface or inside an object. A method of using the apparatus in laser processing systems includes: determining a specification for the number of patterns and/or the number of layers to be patterned, designing the appropriate number of DOEs according to the product specification, assembling the DOEs into an array to be used in a laser processing system, ablating the layer on the object through laser processing, determining whether more patterns on the layer are to be processed, determining whether more layers are to be patterned, and changing and aligning the DOE for the next laser ablation pattern to be processed.
Further areas of applicability of the present invention will become apparent from the detailed description provided hereinafter. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
The present invention will become more fully understood from the detailed description and the accompanying drawings, wherein:
The following description of the preferred embodiment(s) is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
The present invention relates to a diffractive optical element (DOE) array apparatus and method of using the apparatus in laser processing systems. More specifically, the present invention relates to a way of interchanging DOEs for use with lasers in manufacturing for versatile tasks such as drilling holes or vias of various sizes and shapes and multiple ablation or material transformation patterns in a surface of an object.
A pulsed or continuous wave (CW) laser (the laser must exhibit a sufficiently small bandwidth to avoid chromatic aberrations induced by the DOE) provides sufficient pulse energy or average power to ablate or transform material in workpiece 170. In one example, the laser may be a picosecond (ps) laser (bandwidth less than 0.1 nanometer) consisting of an oscillator and a regenerative amplifier, the oscillator output power equals 35 milliwatts (mW), the pulse width is approximately 15 ps, the regenerative amplifier output power is 1 Watt (W) at 1 killohertz (kHz) the energy per pulse is 1 millijoule (mJ), the power stability is 1.0% over 12 hours and the pointing stability is approximately 1%.
Linear DOE array 140 holds a plurality of DOEs 130a, 130b, 130c, 130d, 130e, 130f, 130g, 130h and 130i. A DOE is an optical element that acts as a beam splitter or shaper to allow a laser processing system to drill parallel holes or vias of various sizes and shapes and multiple ablation or material transformation patterns on a material on workpiece 170.
DOE array holder 145 is holds the DOE array 140 and is used to index the array through subassembly 100 in linear steps, one DOE per step.
Beam 110 is a laser beam, for example, from a ps laser. Sub-beams 150 are formed by beam 110 being transmitted through DOE 130a.
Scan lens 160 is an f-theta telecentric (scan) lens. Scan lens 160 determines the spot size of sub-beams 150 upon workpiece 170. The beam size that enters scan lens 160 must be less than or equal to the pupil size of scan lens 160. Telecentricity is required to keep the incident angle between sub-beams 140 and workpiece 170 perpendicular, which is necessary to drill parallel holes in workpiece 170. In an alternate embodiment, a non-telecentric lens is used to drill angled holes, if parallel holes in the work piece are not required.
Workpiece 170 is the target for subassembly 100. In one example, workpiece 170 is a stainless steel inkjet nozzle foil; however, the present invention may be generalized to a variety of workpiece materials, such as polymers, semiconductor metals, or ceramics. In alternate embodiments, subassembly 100 can drill holes or cause material transformations of a wide variety of shapes and tapers in workpiece 170.
A brief description of the operation of subassembly 100 is provided below. In alternate embodiments, changes in the elements of subassembly 100 may be required. The present invention is not limited to the current selection and arrangement of elements in subassembly 100.
In operation, beam 110 is emitted from a laser source; for example, a ps laser (not shown) propagates along the optical path identified in
DOE linear array 140 is one of the preferred array embodiments of subassembly 100. There may be any number of DOEs 130 held on DOE base 210 according to the product specifications. In one example the DOE base 210 is an aluminum (Al) plate with openings. The openings are counter-bored so the clear aperture is smaller than the size of the DOE. The DOEs are attached to the DOE base 210 by mechanical means or by an adhesive. The DOE array holder 145 holds DOE base 210 and is used to index the array through subassembly 100 in linear steps, one DOE per step. DOE 130a then 130b then 130c and so forth are sequenced through subassembly 100 one at a time in the X axis direction by indexing or mechanical stage mechanism as is in common use in optical assemblies. DOEs are often an etching on a glass substrate or alternatively could be a spun coat resist that has been made using a laser beam writer. DOEs 130a, 130b, 130c, 130d, 130e, 130f, 130g, 130h and 130i may have separate etchings for ablation or material transformation. However, in some cases it may be preferable to duplicate DOEs in different locations on the subassembly in order to reduce changeover time when swapping patterns.
There may be any number of DOEs 130 held on DOE base 310 according to the product specifications. In one example the DOE base 310 is an aluminum (Al) plate with openings. The openings are counter-bored so the clear aperture is smaller than the size of the DOE. The DOEs are attached to the DOE base 310 by mechanical means or by an adhesive. The DOE array holder 345 holds DOE base 310 and is used to index the array through subassembly 100 in steps, one DOE per step. DOE 130a then 130b then 130c and so forth are sequenced through subassembly 100 one at a time in the X and Y axis directions by indexing or mechanical stage mechanism as is in common use in optical assemblies. DOEs are often an etching on a glass substrate or alternatively could be a spun coat resist that has been made using a laser beam writer. DOEs 130a, 130b, 130c, 130d, 130e, 130f, 130g, 130h and 130i all have separate etchings for ablation or material transformation.
It should be understood by those familiar with DOEs as beam splitters that DOEs are translationally invariant and not rotationally invariant. These characteristics of DOEs indicate that the arrangements in
Step 510: Determining product's number of patterns/layers specification
In this step, the number of patterns and the number of layers to pattern according to the product specifications is determined. Also, the sequence of patterns to be laid on the workpiece or sequence of layers to be processed is determined in this step. Method 500 proceeds to step 520.
Step 520: Designing and manufacturing multiple DOEs to match product specification
In this step, DOEs are designed to match product specifications defined in step 510. For example, designing and manufacturing is done using known methods of DOE fabrication. Each new pattern requires a separate DOE to be designed and manufactured. Method 500 proceeds to step 530.
Step 530: Assembling DOE array
In this step, the DOEs are assembled into an array of DOEs, for example, DOE linear array 140, DOE rectangular array 300, or DOE wheel array 400. The support for each of DOE linear array 140,. DOE rectangular array 300, or DOE wheel array 400 may be made of a glass substrate, or structured as a mechanical mount that allows DOEs to be accurately placed on the substrate. Each DOE is indexed by its position in the DOE array. While not required, it is desirable to have the DOE array index correspond to the pattern or layer sequence determined in Step 510. Method 500 proceeds to step 540.
Step 540: Processing pattern
In this step, the pattern on workpiece 170 is created, for example with a milling algorithm (not shown) employed by a laser processing system, which includes subassembly 100.
For example, greater hole density on one layer may be achieved by patterning with DOE 130a and then DOE 130b (after steps 560 and 570) and so forth if desired. Thus, a streamlined, non-complex, parallel laser processing system able to drill denser holes than conventional means is achieved.
Method 500 proceeds to step 550.
Step 550: More patterns on layer?
In this decision step, it is determined if the layer just ablated or transformed in step 540 needs additional patterns to be processed. If yes, then method 500 proceeds to step 570. If no, then method 500 proceeds to step 560.
Step 560: Next layer?
In this decision step, it is determined if there are more layers to be patterned on workpiece 170. If yes, then method 500 proceeds to step 570. If no, then method 500 ends.
Step 570: Changing and aligning DOE
In this step, the next DOE 130 is sequenced for use on subassembly 100 from the DOE linear array 140 or optionally DOE rectangular array 300 or optionally DOE wheel array 400. For example, DOE 130b would be used after DOE 130a. A simple changing and aligning mechanism is employed with stops, for example, a gas-driven actuator with fixed index points. Due diligence must be adhered to such that no rotational misalignment occurs in between each DOE change and alignment since DOEs are translationally invariant and not rotationally invariant. DOE linear array 140 and DOE square array 300 are the preferred embodiments, but DOE wheel array 400 may be used as alternate embodiments in subassembly 100.
The ability to change DOE 130 from one pattern to another streamlines the laser drilling process and allows for increased speed and throughput in a manufacturing process.
Method 500 proceeds to step 540 for further processing.
The description of the invention is merely exemplary in nature and, thus, variations that do not depart from the gist of the invention are intended to be within the scope of the invention. Such variations are not to be regarded as a departure from the spirit and scope of the invention.