Number | Name | Date | Kind |
---|---|---|---|
4948990 | Shin et al. | Aug 1990 | A |
5343090 | Proebsting | Aug 1994 | A |
5410189 | Nguyen | Apr 1995 | A |
5467037 | Kumar et al. | Nov 1995 | A |
5864251 | Bloker et al. | Jan 1999 | A |
5942917 | Chappell et al. | Aug 1999 | A |
5982198 | Fulkerson | Nov 1999 | A |
6011410 | Kim et al. | Jan 2000 | A |
6040713 | Porter et al. | Mar 2000 | A |
6307409 | Wrathall | Oct 2001 | B1 |
Entry |
---|
Braceras, G., et al., “A 350 MHz 3.3V 4Mb SRAM Fabricated in a 0.3 μm CMOS Process,” ISSCC97/Session 24/Non-Volatile Memory and SRAM/Paper SP 24.5, IEEE Internat'l. Solid-State Circuits Conf., Digest of Technical Papers, Feb. 1997, pp. 404-405. |
Amrutur, B., et al., “A Replica Technique for Wordline and Sense Control in Low-Power SRAM's,” IEEE Journal of Solid-State Circuits, vol. 33, No. 8, Aug. 1998, pp. 1208-1219. |