DIODE ELEMENT AND DISPLAY APPARATUS USING SAME AS ELECTRON SOURCE

Abstract

In order too control the non-uniformity of electron emission amount within the surface or between adjacent pixels which is a cause for formation non-uniformity when forming, using anodization, an electron acceleration layer for an MIM type diode element which is appropriate for a thin film electron source, there is provided an insulation layer 12 which forms a MIM type diode element as a non-crystalline oxidized film which is formed by anodization of the surface of a lower electrode 11 with the formation of the lower electrode 11 as laminated layers which have a single layer film of aluminum or aluminum alloy or an outer layer of any of these, with a non-phosphor as a single layer film of aluminum or aluminum alloy which is anodized.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows the diode voltage dependency of the emitter current and diode current for a MIM emitter which is respectively comprised of a non-oriented multi crystalline film and a (111) oriented multi crystalline film on a seed film;

FIG. 2 explains the relationship of the diffraction angle and diffraction strength for every kind of aluminum-neodymium film shown using wide-angle X-ray diffraction;

FIG. 3 shows (a) a front light display photo of a display surface for a cathode substrate, the results (b) of measurement using AFM of the surface roughness distribution of the tunnel part, and (c) measured results using a probe type step meter for the same distribution;

FIG. 4 is a diagram which shows (a) the measured results using AFM of the surface roughness of the tunnel part of the Al—Ni film which was manufactured under the same conditions as the cathode substrate used in FIG. 3, and (b) the measured results of the distribution of absolute reflectance for the same sites, and (c) the measured results of the distribution for sheet resistance at the same sites;

FIG. 5 is a diagram which shows the (a) measured results for the absolute reflectance of the Al—Nd film that was formed under the same conditions as the cathode electrode used in FIG. 3 and the (b) diffraction strength, (c) half-width, and (d) surface gap that was obtained from the rocking curve of the (111) diffraction peak using the same sites as the measurement sites as (a);

FIG. 6 explains the manufacturing process for the thin film type electron source of this invention;

FIG. 7 is a continuation diagram from FIG. 6 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 8 is a continuation diagram from FIG. 7 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 9 is a continuation diagram from FIG. 8 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 10 is a continuation diagram from FIG. 9 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 11 is a continuation diagram from FIG. 10 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 12 is a continuation diagram from FIG. 11 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 13 is a continuation diagram from FIG. 12 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 14 is a continuation diagram from FIG. 13 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 15 is a continuation diagram from FIG. 14 which explains the manufacturing process for the thin film type electron source of this invention;

FIG. 16 explains a construction example for a MIM type cathode substrate;

FIG. 17 explains a construction example for an anode substrate;

FIG. 18 is a cross-sectional view of an image display apparatus that has combined a cathode substrate and an anode substrate;

FIG. 19 is a development schematic which explains a summary of all construction examples for this invention's image display apparatus;

FIG. 20 is a cross-sectional view which, using the MIM type, explains a fundamental construction example for a thin film electron source; and

FIG. 21 explains the operation principles for a thin film electron source.

Claims

1. A diode element of metal-insulating layer-metal type which is formed by stacking in order a lower electrode, insulating layer, and an upper electrode on a flat substrate, wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, andwherein the lower electrode, and the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has any one of these, and in the anodization process the aluminum or aluminum alloy film are non-crystalline.

2. A diode element of metal-insulating layer-metal type which is formed by stacking in order a lower electrode, insulating layer, and an upper electrode on a flat substrate, wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, the lower electrode, andwherein the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has an outermost layer of aluminum or aluminum alloy and in the anodization process, there are low oriented aluminum or aluminum alloy crystals with a ratio [(220) strength/(111) strength]] of peak strength of (220) diffraction lines and (110) peak strength of diffraction lines, given from wide-angle X-ray diffraction of the aluminum or aluminum alloy, is in the range of 0.2 to 0.6.

3. A diode element of metal-insulating layer-metal type which is formed by stacking in order a lower electrode insulating layer, and an upper electrode on a flat substrate, wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, the lower electrode, andwherein the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has an outermost layer of aluminum or aluminum alloy and when actually used, the aluminum or aluminum alloy films are crystals whose half-width distribution of the X-ray diffraction rocking curve for superior oriented crystal surfaces within the substrate is 10% or less.

4. A diode element according to claim 3, wherein there is injection for the diode element with respect to the lower electrode to the insulating layer hot electrons by applying a positive bias to the upper electrode, forming a cold cathode electron source which releases towards the vacuum from the upper electrode one part of the injected hot electrons, andwherein the upper electrode has a film thickness that is equal or lower when comparing to an average free process that is related to electron scattering within the electrode and in addition, the surface work function is smaller than the maximum energy of the hot electrons within said electrode.

5. A diode element according to claim 4, wherein the upper electrode is a laminated film to which iridium, platinum and gold are laminated in this order.

6. A display panel comprising: a flat first substrate which has provided on the inner surface a plurality of electron sources which are arranged in a matrix form; anda flat second substrate which has a plurality of phosphor which respectively correspond with the electron sources,wherein the electron sources are comprised of metal-insulating layer-metal which are formed by stacking in order a lower electrode which is formed on the first substrate, an insulating layer, and an upper electrode,wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, the lower electrode, andwherein the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has an outermost layer of aluminum or aluminum alloy and in the process of anodization, the aluminum or aluminum alloys in a display region are non-crystals.

7. A display panel comprising: a flat first substrate which has provided on the inner surface a plurality of electron sources which are arranged in a matrix form; anda flat second substrate which has a plurality of phosphor which respectively correspond with the electron sources,wherein the electron sources are comprised of metal-insulating layer-metal which are formed by stacking in order a lower electrode which is formed on the first substrate, an insulating layer, and an upper electrode,wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, the lower electrode, andwherein the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has an outermost layer of aluminum or aluminum alloy and in the anodization process, there are low oriented aluminum or aluminum alloy crystals with a ratio [(220) strength/(111) strength]] of peak strength of (220) diffraction lines and (110) peak strength of diffraction lines, given from wide-angle X-ray diffraction of the aluminum or aluminum alloy in a display region, is in the range of 0.2 to 0.6.

8. A display panel comprising: a flat first substrate which has provided on the inner surface a plurality of electron sources which are arranged in a matrix form; anda flat second substrate which has a plurality of phosphor which respectively correspond with the electron sources,wherein the electron sources are comprised of metal-insulating layer-metal which are formed by stacking in order a lower electrode which is formed on the first substrate, an insulating layer, and an upper electrode,wherein the insulating layer is composed of a non-crystalline oxidized layer which forms, using anodization, the lower electrode, andwherein the lower electrode is composed of a simple layer film of aluminum or aluminum alloy or a laminated layer film which has any one of these, and when actually used, the aluminum or aluminum alloy films in a display region are crystals whose half-width distribution of the X-ray diffraction rocking curve for superior oriented crystal surfaces, within the substrate is 10% or less.

9. A display device according to claim 8, wherein there is injection for the diode element with respect to the lower electrode to the insulating layer hot electrons by applying a positive bias to the upper electrode, forming a cold cathode electron source which releases towards the vacuum from the upper electrode one part of the injected hot electrons, andwherein the upper electrode has a film thickness that is equal or lower when comparing to an average free process that is related to electron scattering within the electrode and in addition, the surface work function is smaller than the maximum energy of the hot electrons within said electrode.

10. A display device according to claim 9 wherein the upper electrode is a laminated film to which iridium, platinum and gold are laminated in this order.