Claims
- 1. A direct-heated flow measuring apparatus for measuring the flow rate within a passage comprising;
- a planar substrate that is formed of monocrystalline silicon;
- a film resistance pattern formed partially at said substrate;
- a supporting plate, fixed to said passage, for supporting said substrate, said supporting plate having good heat dissipation characteristics;
- at least one adiabatic member disposed between said substrate and said supporting plate; and
- electric power control means, connected to said film resistance pattern, for controlling the heat generated by said film resistance pattern,
- one part of a surface of said planar substrate and one part of a surface of said supporting plate being superimposed on each other via said adiabatic member, the cross-section of said adiabatic member being smaller than the superimposed area of said planar substrate and said supporting plate.
- 2. An apparatus as set forth in claim 1, wherein apertures are provided in said supporting member.
- 3. An apparatus as set forth in claim 1, wherein fins for dissipating heat are provided in said supporting plate.
- 4. An apparatus as set forth in claim 1, wherein said supporting plate is made of a material having a relatively larger thermal conductivity than a thermal conductivity of said adiabatic member.
- 5. An apparatus as set forth in claim 4, wherein said material is metal.
- 6. An apparatus as set forth in claim 5, wherein said metal is one of aluminium and copper.
- 7. An apparatus as set forth in claim 1, wherein said adiabatic member is inserted between an edge of said supporting plate and said substrate.
- 8. An apparatus as set forth in claim 1, wherein said resistance pattern is formed on said monocrystalline silicon.
- 9. An apparatus as set forth in claim 1, wherein a diffusion resistance is formed as said film resistance pattern in said monocrystalline silicon.
- 10. An apparatus as set forth in claim 1, further comprising a temperature-compensating resistor for detecting the temperature of non-heated fluid in the fluid stream, said temperature-compensating resistor being substantially unaffected by the heat generated from said film resistance pattern, said electric power control means controlling the heat generated by said film resistance pattern and said temperature-compensating resistor.
- 11. An apparatus as set forth in claim 10, wherein a system of said temperature-compensating resistor has the same configuration as a system of said film resistance pattern, the system of said temperature-compensating resistor being symmetrical to the system of said film resistance pattern with respect to the fluid stream.
- 12. An apparatus as set forth in claim 11, wherein the system of said temperature-compensating resistor comprises a supporting means different to the system of said film resistance pattern.
- 13. An apparatus as set forth in claim 11, wherein the system of said temperature-compensating resistor comprises the same supporting means as the system of said film resistance pattern.
- 14. An apparatus as set forth in claim 10, wherein a system of said temperature-compensating resistor has the same configuration as a system of said film resistance pattern, the system of said temperature-compensating resistor being disposed upstream of the system of said film resistance pattern.
- 15. An apparatus as set forth in claim 14, wherein the system of said temperature-compensating resistor comprises the same supporting means as the system of said film resistance pattern.
- 16. An apparatus as set forth in claim 1, wherein said adiabatic member is made of an insulating material.
- 17. An apparatus as set forth in claim 16, further comprising:
- an electrode formed on said supporting plate and connected to said control means; and
- an electric conductive wire, formed by wire bonding, for connecting said electrode to said film resistance pattern.
- 18. An apparatus as set forth in claim 17 further comprising means for covering said electric conductive wire.
- 19. An apparatus as set forth in claim 18, wherein said covering means has at least a curled edge to protect said electric conductive wire.
- 20. An apparatus as set forth in claim 18, further comprising an adiabatic member inserted between said covering means and said substrate.
- 21. An apparatus set forth in claim 1, wherein said supporting plate supports at least one end of said substrate by said adiabatic member.
- 22. A measuring apparatus as in claim 1 wherein said adiabatic member is partially in contact with both said planar substrate and said supporting plate at a portion other than a portion of said planar substrate where said film resistance pattern is formed.
- 23. A direct-heated flow measuring apparatus for measuring the flow rate with passage comprising:
- a planar substrate that is formed of monocrystalline silicon;
- a film resistance pattern formed partially at said substrate;
- a supporting plate, fixed to said passage, for supporting said substrate, said supporting plate having good heat dissipation characteristics;
- at least one adiabatic member disposed between said substrate and said supporting plate; and
- electric power control means, connected to said film resistance pattern, for controlling the heat generated by said film resistance pattern,
- said adiabatic member being partially in contact with both said planar substrate and said supporting plate at a portion other than a portion of said planar substrate where said film resistance pattern is formed, wherein a material of said adiabatic member is polyimid resin, and wherein said polyimid resin has a thickness of 50 to 60 .mu.m.
- 24. A direct-heated flow measuring apparatus for measuring the flow rate within a passage comprising:
- a planar substrate that is formed of monocrystalline silicon;
- a film resistance pattern formed at a central portion of said substrate;
- a supporting plate, fixed to said passage, for supporting at least one end of said substrate, said supporting plate having good heat dissipation characteristics;
- means for throttling heat transfer between said substrate and said supporting plate; and
- electric power control means, connected to said film resistance pattern, for controlling the heat generated by said film resistance pattern,
- wherein holes are provided in said supporting plate, said heat transfer throttling means comprising adiabatic chips fixed to said holes, said substrate being fixed to said chips.
- 25. A direct heated flow measuring apparatus for measuring the flow rate within a passage, comprising:
- a planar substrate that is formed of monocrystalline silicon;
- a film resistance pattern formed at the central portion of said substrate;
- a supporting plate fixed to said passage, for supporting at least one end of said substrate, said supporting plate being made of a metal material having a relatively larger thermal conductivity than a thermal conductivity of an adiabatic member;
- said adiabatic member between said substrate and said supporting plate, for throttling heat transferred between said substrate and said supporting plate; and
- electric power control means, connected to said film resistance pattern, for controlling the heat generated by said film resistance pattern.
Priority Claims (3)
Number |
Date |
Country |
Kind |
60-25232 |
Feb 1985 |
JPX |
|
60-29286 |
Feb 1985 |
JPX |
|
60-34413 |
Feb 1985 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 828,452, filed Feb. 11, 1986, which was abandoned upon the filing hereof.
US Referenced Citations (16)
Foreign Referenced Citations (7)
Number |
Date |
Country |
19135 |
Apr 1980 |
EPX |
5814023 |
Jul 1981 |
JPX |
58-55762 |
Apr 1983 |
JPX |
2039051 |
Oct 1979 |
GBX |
2043264 |
Jan 1980 |
GBX |
2094985 |
Mar 1982 |
GBX |
2134266 |
Jan 1984 |
GBX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
828452 |
Feb 1986 |
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