The present invention relates to the operation of electrostatic actuators, and more particularly, but not exclusively relates to simultaneous actuation and sensing techniques for such devices.
In Microelectromechanical Systems (MEMS), electrostatic drives, such as comb drives, typically rely on different actuation and sensing structures for feedback control. Separate actuation and sensing structures tend to undesirably add to the moving mass of the device—potentially resulting in a decrease of the device resonant frequency and correspondingly the operational frequency range of the device. Also, separate structure can lead to additional flexures, such as hinges or leaf springs, that add mechanical resistance and correspondingly reduces the displacement range of the device. Alternatively or additionally, existing schemes tend to be exceedingly complex, require incorporation of materials unfriendly to standard MEMS device fabrication techniques, and/or utilize more device “real estate” than is otherwise desired. Thus, there is an ongoing demand for further contributions in this area of technology.
One embodiment of the present invention includes a unique operating technique for an electrostatic drive. Other embodiments include unique apparatus, devices, systems, and methods of actuation and sensing for an electrostatic drive. Further embodiments, forms, objects, features, advantages, aspects, and benefits of the present application shall become apparent from the detailed description and drawings included herein.
For the purposes of promoting an understanding of the principles of the invention, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same. It will nevertheless be understood that no limitation of the scope of the invention is thereby intended. Any alterations and further modifications in the described embodiments, and any further applications of the principles of the invention as described herein are contemplated as would normally occur to one skilled in the art to which the invention relates.
One embodiment of the present application includes a microelectromechanical system (MEMS) with an electrostatic drive. This drive includes a first electrode spaced apart from a second electrode. The drive is responsive to an electric drive signal to change displacement between the first electrode and second electrode. The system further includes circuitry with a signal source to generate the drive signal and a monitoring circuit to evaluate the displacement. The drive signal simultaneously provides an actuation constituent and a sensing constituent. The sensing constituent has a frequency greater than a natural resonant frequency of the drive. The monitoring circuitry detects a change in capacitance indicative of the displacement as a function of the sensing constituent of the drive signal.
The interdigitated fingers 35 ad 36 between fixed stator 32 and the movable rotor 33 form a variable capacitive structure 50. Rotor 33 is connected to MEMs anchors 40 of system 20 by flexible suspending structure 38, which may be comprised of folded springs or the like. The stiffness of suspending structure 38 is represented by a spring constant Kd in the direction of actuation along axis A and a spring constant K1 in the lateral direction perpendicular to axis A. Typically, K1 is much greater (stiffer) than Kd to reduce side instability.
In circuitry 70, actuator 30 is schematically represented by a variable capacitor CC between electrodes 31 that corresponds to the gap g between electrodes 31, where air is typically the dielectric within this gap. Circuitry 70 models any parasitic capacitance associated with actuator 30 with capacitor CP (shown in phantom), which is electrically coupled parallel to capacitor CC. In addition, resistor Rload is electrically connected from the output of adder 79 to electrical ground. Resistor Rload protects actuator 30 by providing an alternative route through which to dissipate current/charge surges
Displacement monitoring circuit 80 includes resistor R1 electrically coupled in series with actuator 30. Resistor R1 and actuator 30 can be modeled as an RC circuit 100, and more generally as respective impedances Z1 and Z2 electrically coupled in series. Monitoring circuit 80 includes a demodulation circuit 150 to process the voltage drop signal VR1 across resistor R1 in such manner that it is representative of displacement between stator 32 and rotor 33. The output of demodulation circuit 150 is provided to feedback/control circuit 120 that in turn is coupled to source 72 to provide closed loop control of drive 30a.
The actuation signal VAct is typically a low-frequency or DC signal in the 0 through 100 Hertz (Hz) range. At low frequencies, due to its small capacitance, the comb drive has a relatively high impedance (ideally infinite for a constant-level DC signal). The typical MEMS actuator drive structure mechanically behaves as a second-order mass-spring-damper system, which attenuates mechanical response to a negligible level for input drive signals with a frequency significantly higher than the mechanical resonant frequency of such structure. For a comb actuator with n fingers in rotor 32 (assuming no fringe effects), the overall force is F=n(εt/g)V2, where ε is the permittivity of free space, t is the thickness of interdigitated fingers, g is the gap between fingers and V is the drive voltage. Assuming that the stiffness along the actuation direction (axis A) is constant, Kd, when the actuated displacement is much less than the compliant dimension of the suspension structure, then the static displacement of the actuator is d=ΔL=F/Kd. This displacement causes the capacitance in the gap g of the structure to change by ΔC=(εt/g)ΔL=(εt/g)d, suggesting a proportional relationship between the state (displacement) of the drive and its capacitance. Further, during actuation, in addition to the capacitive driving force and the restoring spring force of the suspension structure 38, the comb drive 30a overcomes the initial force of the mass of the moving structure, the viscous and squeeze damping forces due to the air in the interdigitated structures, and other interactions the structure may have with the environment, leading to a second-order mass-spring-damping dynamic model, as follows in expression (1):
where: m is the equivalent mass of the device, f is the damping coefficient, k=1/m, ωn=√{square root over (Kd/m)} is the natural resonant frequency, and
is the damping ratio. The normalized (with the horizontal axis set to the ratio: ω/ωn) magnitude bode plot for such a second-order system as shown in
Referring additionally to
The actuation signal VAct constituent of composite signal VOut electrostatically drives actuator 30, resulting in the generation of a mechanical force as represented by operation 110. In turn, this force causes a change in displacement (ΔL) between electrodes 31 as represented by operation 130. This change in displacement (ΔL) causes the capacitance in the gap g of the structure to change (ΔC) as represented by operation 140. Drive signal Vout is also applied to the electrical RC circuit 100 defined by circuitry 70 which is further influenced by the change in capacitance (ΔC). More specifically, the sensing signal Vsen constituent of Vout provides a vehicle to detect the degree of capacitance change (ΔC) in RC circuit 100 and correspondingly the displacement change (ΔL).
Because the frequency of sensing signal Vsen, is significantly above the mechanical resonant frequency of drive 30a, it provokes no appreciable mechanical response; however, it does experience a significant amplitude and phase modulation as capacitance of drive 30a changes with displacement, which is represented by response signal 145 (VR1). By monitoring these changes with circuit 80 relative to the input signal, the displacement of drive 30a can be obtained without additional sensing structure. Accordingly, both the sensing signal Vsen and the response from VR1 are input to demodulation circuit 150 of monitoring circuit 80. Circuit 150 provides an output signal 160 corresponding to a change in the amplitude that is representative of displacement, which is provided to feedback circuit 170 for closed-loop control. Circuit 150 is further described in connection with
Considering a specific nonlimiting example, if the measurement or sensing is done at a frequency of 100 kHz, the impedance of drive 30a in the actuation frequency band is about 1000 times less than the sensing frequency. With the selection of resistor R1 to have a value of impedance close to that of drive 30a at the sensing frequency, its impedance is very small compared to that of drive 30a for an actuation frequency band about 1000 times smaller. Thus, most of the voltage drop in the actuation frequency band occurs across drive 30a relative to the voltage drop across resistor R1. The magnitude of voltage drop on resistor R1 as a result of the actuation voltage is provided in expression (2) as follows:
For a MEMS-scale capacitive drive system, CC is in the range of 0.5 picoFarad (pF). If resistor R1 is 1 Megaohm (MΩ), then VR1=0.0003VAct at 100 Hz and VR1=3×10−6 VAct at 1 Hz. For a maximum actuating input of about 100 Volts (V), the voltage drop on the resistor is less than 0.03 V. Thus the sensing circuit is subjected to a very small fraction of the actuation input. Consequently, for a single silicon chip implementation of monitoring circuit 80, standard low voltage design techniques can be utilized.
When actuated, the capacitance of the comb structure changes accordingly to expression (3) as follows:
ΔC=(εt/g)ΔL=(εt/g)d (3)
At the sensing frequency, the impedance due to the comb drive capacitance, 1/jωC, is smaller than in the actuation frequency band and comparable to that of the resistance. The change of capacitance of drive 30a due to mechanical displacement therefore produces a more pronounced change in the behavior of the RC circuit model at this frequency, introducing an amplitude and phase change on the voltage drop across the resistor or capacitor at the sensing frequency relative to sensing signal Vsen.
Because the reference frequency is a parameter that is selected, this amplitude or phase change can determined to represent displacement and/or capacitance change. Under ideal conditions, when parasitic capacitance is negligible, both the phase or amplitude change over the resistor R1 can be used to detect the change of the capacitance. When parasitic capacitance is negligible, the model of expressions (4) and (5) can be applied (in terms of generalized impedance values Z1 and Z2):
When parasitic capacitance is not negligible compared to the drive capacitance, the voltage across the resistor can be modeled with expressions (6) and (7) as follows:
where: Z1 is the impedance of the combined resistor R1 and the parasitic capacitance Cm, Z2 is the impedance of the combined comb capacitance Cc and parasitic capacitance Cp, and ω is the sensing frequency.
If parasitic capacitance from monitoring circuit 80 is very large when compared with that from the device, the phase change would be small but the amplitude change can still be significant. When Cm>>Cc, corresponding to a certain displacement or capacitance change dCc, the gain change or change in magnitude of the output signal with unit input signal can be modeled by expression (8) as follows:
which indicates that the amplitude change is proportional to the capacitance change.
Further, it may be observed that the sensitivity is increased when the amplitude change of the voltage across resistor R1 is increased compared to its initial amplitude.
Expression (9) further defines the amplitude ratio as follows:
Based on expression (9), precision increases with amplitude change ratio, and the smaller the parasitic capacitance Cc, the larger the amplitude change ratio.
Referring to
For low noise and/or less precise applications,
Many different embodiments of this present application are envisioned. Referring to
Still a different embodiment includes: providing an electrostatic comb drive including a first electrode with several first fingers and a second electrode with several second fingers, the first fingers and the second fingers being interdigitated and spaced apart from one another; applying an electric drive signal to the electrostatic comb drive, the electric drive signal including an actuation signal constituent and a sensing signal constituent, the sensing signal constituent being in a frequency range above a natural mechanical resonant frequency of the electrostatic comb drive; in response to the actuation signal, changing displacement of the first electrode relative to the second electrode; and evaluating the displacement by detecting a change corresponding to a capacitance variation between the first electrode and the second electrode as a function of the sensing signal constituent.
In a further embodiment, an electrostatic comb drive includes a first electrode with several first fingers interdigitated with several second fingers of a second electrode. Also included are: means for applying an electric drive signal to the electrostatic comb drive that includes an actuation signal constituent and a sensing signal constituent in a frequency range above a mechanical resonant frequency of the electrostatic comb device, means for changing displacement of the first electrode relative to the second electrode in response to the actuation signal constituent, and means for evaluating the displacement by detecting a change corresponding to a capacitance variation between the first electrode and the second electrode as a function of the sensing signal constituent.
Another embodiment is directed to a microelectromechanical device that comprises: an electrostatic comb drive including a first electrode with several first fingers and a second electrode with several second fingers that are interdigitated and spaced apart from the first fingers; and circuitry including a signal source to generate an electric drive signal with an actuation signal constituent and a sensing signal constituent, an electric node to monitor an electrical evaluation signal indicative of the displacement of the first electrode relative to the second electrode in response to the drive signal from the signal source, a filter applied to the electrical response to output a response signal selective to the frequency range, and a signal processing circuit to provide an output representative of the displacement in accordance with the response signal.
A further embodiment of the present application includes a microelectromechanical device comprising: a signal source to provide an electric drive signal including a displacement actuation signal constituent and a displacement sensing signal constituent; a linear electrostatic drive including a first electrode and a second electrode spaced apart from the first electrode, which are responsive to the drive signal to change relative displacement therebetween with the displacement sensing signal constituent being at a frequency range higher than a mechanical resonant frequency of the drive; and circuitry coupled to the drive to monitor electrical response of the drive to the drive signal. This circuitry may be structured to evaluate the displacement by detecting a change corresponding to capacitance variation between the first and second electrodes as a function of the sensing signal constituent and the electrical response.
In yet a further embodiment, a linear electrostatic drive includes a first electrode and a second electrode. Also included are: means for supplying a drive signal to the drive, where such drive signal includes an actuation signal constituent and a sensing signal constituent that is at a frequency higher than a mechanical resonant frequency of the drive; means for displacing the first electrode relative to the second electrode in response to the actuation signal constituent; and means for detecting a displacement of the first electrode that includes means for determining one or more of a change in magnitude and a change in phase of an evaluation signal as a function of the sensing signal constituent.
Still another embodiment comprises: applying an electric drive signal to a linear electrostatic drive, where the signal includes an actuation signal constituent and a sensing signal constituent. The linear electrostatic drive includes a first electrode and a second electrode with the sensing signal constituent being at a frequency higher than a natural mechanical resonant frequency of the drive. Also included are: displacing the first electrode relative to the second electrode in response to the actuation signal constituent; and detecting the displacing of the electrode, which includes determining one or more of a change in magnitude and a change in phase of an evaluation signal as a function of the sensing signal constituent.
The simultaneous actuation and sensing strategy for electrostatic drives was tested with a MEMS parallel kinematic XY micropositioning stage 530 as depicted in the SEM images of
A probe was integrated into stage 530 as a functional manipulator. Targeted applications, such as materials (thin film) characterization and mechanical testing of biological structures are among those that may benefit from the precise position sensing offered by this device. The fabrication of this device includes three patterning steps and two etching steps. The comb structures are fabricated by the DRIE Bosch process. The handle layer at the back of the device is also etched away so that the test sample can be fed from either the top or the bottom.
The fabricated comb drive 534 has 220 interdigitated finger pairs, thus about 440 gaps. The thickness of the fingers is about 50 μm and the gap between fingers is about 5 μm. The initial engagement of the interdigitated fingers is about 9 μm. With the above parameters, the initial capacitance from comb drive 534 is about 0.35 pF. If the maximum displacement of comb drive 534 is 15 μm, then the capacitance change will be only about 0.58 pF.
Compared with the parasitic capacitance from the measurement loop including coaxial cables and lock-in amplifier, which is generally several hundreds pF, the capacitance change of comb drive 534 is much smaller. This large parasitic capacitance in parallel with the resistor from the measurement loop decreases sensitivity to small capacitance changes that would typically be favored for phase change detection. Accordingly, for this experimental set-up, amplitude change was used as an indicator of capacitance change. A probe station was used to connect the signal to the electrodes of the comb drive 534. In order to increase the sensitivity, the parasitic capacitance in parallel with comb drive 534 was reduced by using single-wire cables instead of coaxial or tri-axial cables. The cables were routed far away from each other and their lengths were kept small. As a result, the parasitic capacitance parallel with the comb drive 534 was less than 10 pF.
The sensing signal was obtained as a reference signal from a commercial lock-in amplifier (SR850 from Stanford Research Systems, Inc) with a frequency of 100 KHz, which is about 100 times larger than the mechanical resonant frequency of the stage 530. The sensing signal has a magnitude of 1 V which induces a mechanical vibration amplitude is only 1/10,000 of 1 V dc input. Because drive 534 moves approximately 14 μm at 100 V, the 1 V, 100 kHz sensing signal only moved the mechanism by a negligible amount of 1.4×10-7 μm. The actuation voltage was supplied by a voltage amplifier (Trek 623 B) and commanded by a function generator (HP/Agilent 33220A). All the circuitry was implemented on a breadboard and connected with the lock-in amplifier, power supply and probe station.
The driving voltage for an actuator was gradually incremented and the corresponding displacements of comb drive 534 were observed visually by tracking the motion of a feature on the end-effector with a microscope scale that has a resolution of 1 μm. At the same time, the amplitude of the voltage across the resistor of the RC circuit is measured by the lock-in amplifier at the sensing frequency. The graphs of
Next, the same experiment of increasing the actuation voltage in steps is carried out with the amplitude of the output from the lock-in amplifier recorded. The observed amplitude change from the lock-in amplifier is depicted by the graphs of
Any theory, mechanism of operation, proof, or finding stated herein is meant to further enhance understanding of the present invention and is not intended to make the present invention in any way dependent upon such theory, mechanism of operation, proof, or finding. It should be understood that while the use of the word preferable, preferably or preferred in the description above indicates that the feature so described may be more desirable, it nonetheless may not be necessary and embodiments lacking the same may be contemplated as within the scope of the invention, that scope being defined by the claims that follow. In reading the claims it is intended that when words such as “a,” “an,” “at least one,” “at least a portion” are used there is no intention to limit the claim to only one item unless specifically stated to the contrary in the claim. Further, when the language “at least a portion” and/or “a portion” is used the item may include a portion and/or the entire item unless specifically stated to the contrary. Furthermore, all patents, patent applications, and publications cited herein are hereby incorporated by reference. While the invention has been illustrated and described in detail in the drawings and foregoing description, the same is to be considered as illustrative and not restrictive in character, it being understood that only the selected embodiments have been shown and described and that all changes, modifications and equivalents that come within the spirit of the inventions as defined herein are desired to be protected.
The present invention was made with Government assistance under NSF Grant Contract Number DMI 0328162 and DMI 0422687. The Government has certain rights in this invention.